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PHYSICALDESIGNFORASIC:TEMPERATUREINVERSION
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Sunday,11January2015

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TEMPERATUREINVERSION
TEMPERATUREINVERSION:
Traditionally MOSFET drive current (ID) reduced with increasing temperature. Hence for most
casesworstcasedelaycornerusedtobehightemperature(100Corhigher,dependingontarget
application).Withtransistorscaling,VDDandVthavescaledbutnotasaggressivelyastherest
oftheparameters(suchasgateoxidethickness,channellengthetc.).IfyoulookattheMOSFET
drivecurrentequation,

03:53:07pm
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AvinashJiddigi
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So,ID varieslinearlyasu(mobility)and(VGSVT)2ortheoverdrivevoltage.BothmobilityandVt
reduce with increasing temperature and vice versa. Interestingly, current is dependent on
differencebetweenVgandVt.Sothereiscontentionbetweenmobilityandthe(VgVt)term,and
theonewithmoreimpactonthefinalcurrentwilldetermineifdrivecurrentincreasesordecreases
with increasing temperature. For scaled nodes, i.e. at lower technologies VDD has scaled to
valueslike0.9Vorlower,whileVthasnotscaledasaggressively(0.3~0.4V),becauseofwhich
even though mobility improves at low temperature, the increasing Vt and hence reducing (VgVt)
has a greater impact on the current, resulting in less drive current at lower temperature than at
highertemperature.Hence,atscaledtechnologynodes,thelowtemperaturebecomestheSLOW
corner, not HIGH temperature, especially for the HVT devices. This phenomenon is known has
inversetemperaturedependenceinMOSFETs.

PostedbyAvinashJiddigiat21:25

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TraditionallyMOSFETdrive
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