BTB/BTA15

Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB

Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R

G
T2
T1
T2

G
T1

Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110

Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79

ABSOLUTE MAXIMUM RATINGS

Symbol
IT(RMS)
ITSM
It
dI/dt

Parameter

PG(AV)
Tstg
Tj

Unit

RMS on-state current (full sine wave)

TO-220AB

Tc = 100C

15

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25C)

F = 60 Hz
F = 50 Hz

t = 16.7 ms
t = 20 ms

168
160

144

As

It Value for fusing

Critical rate of rise of on-state current
_ 100 ns
I G = 2 x I GT , tr <

tp = 10 ms

VDSM/V RSM Non repetitive surge peak off-state

voltage
IGM

Value

Peak gate current

F = 120 Hz

Tj = 125C

50

A/s

tp = 10 ms

Tj = 25C

VDRM/VRRM

tp = 20 s

Tj = 125C

Tj = 125C

- 40 to + 150
- 40 to + 125

Average gate p ower diss ipation

+ 100

Storage junction temperature range

Operating junction temperature range

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)

SNUBBERLESS and LOGIC LEVEL(3 Quadrants)

Symbol

IGT (1)
VGT

Test Conditions

VD = 12 V

VGD

VD = VDRM

IH (2)

IT = 500 mA

IL

IG = 1.2 IGT

Quadrant

RL = 33
RL = 3.3 k

Tj = 125C

BTA/BTB

35

50

mA

MAX.

I - II - III

MAX.

1.3

I - II - III

MIN.

0.2

I - III

VD = 67 % VDRM gate open Tj = 125C

(dI/dt)c (2) Without snubber

BW

I - II - III

MAX.

35

50

mA

MAX.

50

70

mA

60

80

MIN.

500

1000

V/s

MIN.

8.5

14

A/ms

II
dV/dt (2)

Unit

CW

Tj = 125C

BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)

STANDARD (4 Quadrants)
Symbol

Test Conditions

IGT (1)

Quadrant

RL = 33

VD = 12 V
VD = VDRM

IH (2)

IT = 500 mA

IL

IG = 1.2 IGT

RL = 3.3

Unit

I - II - III
IV

MAX.

50
100

mA

ALL

MAX.

1.3

ALL

MIN.

0.2

MAX.

50

mA

MAX.

60

VGT
VGD

Value

Tj = 125C

I - III - IV
II

mA

120

dV/dt (2) VD = 67 % VDRM gate open Tj = 125C

(dV/dt)c (2) (dI/dt)c =7 A/ms
Tj = 125C

MIN.

400

V/s

MIN.

10

V/s

STATIC CHARACTERISTICS
Symbol

Test Conditions

VTM (2)

ITM = 5.5 A

Vto (2)

tp = 380 s

Value

Unit

Tj = 25C

MAX.

1.55

Threshold voltage

Tj = 125C

MAX.

0.85

Rd (2)

Dynamic resistance

Tj = 125C

MAX.

60

IDRM

VDRM = VRRM

Tj = 25C

mA

IRRM

Tj = 125C

MAX.

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

THERMAL RESISTANCES
Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

1.2

C/W

Rth(j-a)

Junction to ambient

60

C/W

PRODUCT SELECTOR
Voltage (xxx)
Part Number

Sensitivity

Type

Package

50 mA

Standard

TO-220AB

Weight

Base
quantity

Packing
mode

2.3 g

250

Bulk

200 V ~~ 1000 V
BTB/BTA15

OTHER INFORMATION

Part Number
BTB/BTA15

Marking
BTB/BTA15

BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipa tion vers us R MS
on-s tate current (full cycle).

20
18
16
14
12
10
8
6
4
2
0

F ig. 2-1: R MS on-s tate current vers us cas e

temperature (full cycle).

P (W)

IT (R MS ) (A )

IT (R MS ) (A )
0

10

12

14

16

F ig. 3: R elative variation of thermal impeda nce

versus pulse duration.

1E +0

18
16
14
12
10
8
6
4
2
0

B TB

B TA

T c ( C )
0

25

F ig. 4:
values )

50

O n-s tate

200

1E -1

Zth(j-a)

10

T j=25 C

1E -1

1E +0

1E +1

1E +2 5E +2

IT S M (A )

t=20ms

One cycle

Non repetitive
T j initial=25C

R epetitive
T c=85C

Number of cycles
10

T j max:
V to = 0.85 V
R d = 25 m

V T M (V )

F ig. 5: S urge peak on-s tate current versus

number of cycles.

(ma ximum

T j max

tp (s )

180
160
140
120
100
80
60
40
20
0

chara cteris tics

125

100

Zth(j-c )

1E -2

100

IT M (A )

K =[Zth/R th]

1E -2
1E -3

75

100

1000

1
0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of It.

F ig. 7: R elative va riation of gate trigger current,

holding current and la tching current versus
junction temperature (typical va lues ).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25 C ]

IT S M (A ), I t (A s )

2.5

3000
T j initial=25C

2.0
IG T

dI/dt limitation:
50A /s

1000

1.5
1.0

IT S M

IH & IL

0.5
It

tp (ms )
100
0.01

0.10

1.00

T j( C )
10.00

F ig. 8:
R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ).

1.6
1.4

20

40

60

80

100

120

140

F ig. 9: R elative variation of critical rate of

decreas e of main current vers us junction
temperature.

6
5

SW

1.2

B W/C W/T 1635

1.0

3
2

0.8
0.6
0.4
0.1

-20

(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]

(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c

2.0
1.8

0.0
-40

(dV /dt)c (V /s )
1.0

10.0

100.0

T j ( C )
0

25

50

75

100

125