Mosfet 10NM60N

STD10NM60ND, STF10NM60ND
STP10NM60ND
N-channel 600 V, 0.57 , 8 A, DPAK, TO-220FP, TO-220
FDmesh II Power MOSFET (with fast diode)
Features
Order codes
VDSS
@TJmax
RDS(on)
max.
PTOT
ID
STD10NM60ND
STF10NM60ND
TAB
70 W
650 V
< 0.6
8A
25 W
STP10NM60ND
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt avalanche capabilities
TO-220FP
DPAK
70 W
TAB
3
1
TO-220
Applications
Figure 1.
Switching applications
Internal schematic diagram
Description
$4!"
This FDmesh II Power MOSFET with intrinsic

fast-recovery body diode is produced using the
second generation of MDmesh technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low onresistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
DPAK
Tape and reel
STD10NM60ND
STF10NM60ND
10NM60ND
TO-220FP
Tube
STP10NM60ND
November 2011
TO-220
Doc ID 18467 Rev 2
1/19
www.st.com
19
Contents
STD10NM60ND, STF10NM60ND, STP10NM60ND
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
Doc ID 18467 Rev 2
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings

Value
Symbol
Parameter
Unit
DPAK
TO-220FP
TO-220
VDS
Drain-source voltage
600
VGS
Gate- source voltage
25
ID
ID
IDM
(2)
PTOT
dv/dt(3)
Drain current (continuous) at TC = 25 C

Drain current (continuous) at TC = 100 C
8 (1)
5 (1)
32
70
Drain current (pulsed)
32
Total dissipation at TC = 25 C
70
32
(1)
25
Peak diode recovery voltage slope
40
V/ns
VISO
Insulation withstand voltage (RMS) from all

three leads to external heat sink
(t=1 s;TC=25 C)
2500
TJ
Tstg
Operating junction temperature

Storage temperature
- 55 to 150
1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.
3. ISD 8 A, di/dt 400 A/s, VDS peak V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
DPAK
TO-220FP
TO-220
1.79
Rthj-case
Thermal resistance junction-case max
1.79
Rthj-amb
Thermal resistance junction-ambient max
62.50
Rthj-pcb
Thermal resistance junction-pcb max
TJ
Table 4.
Symbol
62.50
50
C/W
C/W
C/W
Maximum lead temperature for soldering

purpose
300
C/W
Avalanche characteristics
Parameter
Value
Unit
IAS
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max)
2.5
EAS
Single pulse avalanche energy (starting

TJ=25 C, ID=IAS, VDD=50 V)
130
mJ
Doc ID 18467 Rev 2
3/19
Electrical characteristics
(Tcase =25 C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Min.
Typ.
Max.
Unit
600
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS = 600 V, TC =125 C
1
100
A
A
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
0.57
0.6
Min.
Typ.
Max.
Unit
pF
pF
pF
VGS = 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 A
RDS(on)
Static drain-source on
resistance
Table 6.
Symbol
VGS = 10 V, ID = 4 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
577
32.4
1.76
Equivalent
capacitance time
related
VDS = 0 to 480 V, VGS = 0
138
pF
Rg
Gate input resistance
f=1 MHz open drain
Qg
Qgs
Qgd
Total gate charge

Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 8 A,
VGS = 10 V
(see Figure 19)
20
4.3
11.6
nC
nC
nC
Ciss
Coss
Crss
Coss eq(1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
4/19
Turn-on delay time

Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 4 A,
RG = 4.7 , VGS = 10 V
(see Figure 18)
Doc ID 18467 Rev 2
Min.
Typ.
9.2
10
32
9.8
Max Unit
ns
ns
ns
ns
Table 8.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source drain diode

Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Min. Typ. Max
Unit
8
32
A
A
1.5
Forward on voltage
ISD = 8 A, VGS = 0
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/s

VDD= 60 V
(see Figure 20)
118
680
11
ns
nC
A
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/s

VDD= 60 V TJ = 150 C
(see Figure 20)
150
918
12
ns
nC
A
1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
Doc ID 18467 Rev 2
5/19
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK
Thermal impedance for DPAK
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-220
AM08975v1
ID
(A)
10
Figure 3.
Tj=150C
Tc=25C
Single pulse
is
ea )
ar S(on
is D
th R
x
in
n ma
o
y
ti
ra d b
e
e
p
O imit
L
10s
100s
1ms
10ms
0.1
0.01
0.1
Figure 4.
10
100
Safe operating area for TO-220FP

AM08986v1
ID
(A)
10
Tj=150C
Tc=25C
Single pulse
is
ea )
ar S(on
D
R
t
in ax
n
io y m
t
b
ra
pe ed
O imit
L
10s
s
hi
100s
1ms
10ms
0.1
0.01
0.1
Figure 6.
10
100
VDS(V)
Safe operating area for TO-220

AM08974v1
ID
(A)
10
VDS(V)
Tj=150C
Tc=25C
Single pulse
is
ea )
ar S(on
is D
th R
in ax
n
m
tio by
ra
pe ed
O imit
L
10s
100s
1ms
10ms
0.1
0.01
0.1
6/19
10
100
VDS(V)
Doc ID 18467 Rev 2

Figure 8.
Output characteristics
Figure 9.
AM08976v1
ID (A)
Transfer characteristics
AM08977v1
ID (A)
VDS=19V
VGS=10V
14
14
12
12
7V
10
10
4
6V
2
5V
0
0
Figure 10.
10
20
15
30
25
VGS(V)
10
Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

AM08978v1
VGS
(V)
VDD=480V
12
500
ID=8A
VDS
10
0
0
VDS(V)
AM08979v1
RDS(on)
()
0.60
VGS=10V
0.59
400
0.58
8
300
6
0.57
0.56
200
4
0.55
100
2
0
0
10
15
20
0
Qg(nC)
Figure 12. Capacitance variations
0.53
0
ID(A)
Figure 13. Output capacitance stored energy

AM08980v1
C
(pF)
0.54
AM08981v1
Eoss
(J)
4
1000
Ciss
3
100
2
Coss
10
1
1
0.1
Crss
1
10
100
VDS(V)
Doc ID 18467 Rev 2
0
0
100
200 300
400 500 600
VDS(V)
7/19
Figure 14. Normalized gate threshold voltage

vs temperature
Figure 15. Normalized on resistance vs

temperature
AM08982v1
VGS(th)
(norm)
AM08983v1
RDS(on)
(norm)
2.1
ID=250A
1.10
ID = 4 A
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50
-25
25
50
TJ(C)
75 100
Figure 16. Source-drain diode forward

characteristics
25
TJ(C)
AM09028v1
ID=1mA
1.10
TJ=-50C
TJ=25C
1.0
75 100
VDS
(norm)
1.2
50
Figure 17. Normalized VDS vs temperature

AM08985v1
VSD
(V)
0.5
-50 -25
1.08
1.06
1.04
0.8
1.02
0.6
1.00
TJ=150C
0.98
0.4
0.96
0.2
0
0
8/19
ISD(A)
0.94
0.92
-50 -25
Doc ID 18467 Rev 2
25
50
75 100
TJ(C)
Test circuits
Test circuits
Figure 18. Switching times test circuit for

resistive load
Figure 19. Gate charge test circuit

VDD
12V
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load

Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
D.U.T.
FAST
DIODE
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform

ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
Doc ID 18467 Rev 2
10%
AM01473v1
9/19
Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/19
Doc ID 18467 Rev 2
Table 9.
DPAK (TO-252) mechanical data

mm
Dim.
Min.
Typ.
Max.
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
0.64
0.90
b4
5.20
5.40
0.45
0.60
c2
0.48
0.60
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
2.28
e1
4.40
4.60
9.35
10.10
L1
2.80
L2
0.80
L4
0.60
R
V2
0.20
0
Doc ID 18467 Rev 2
11/19
Figure 24. DPAK (TO-252) drawing
0068772_H
Figure 25. DPAK footprint(a)

6.7
1.8
1.6
2.3
6.7
2.3
1.6
a. All dimension are in millimeters
12/19
Doc ID 18467 Rev 2
AM08850v1

Table 10.
TO-220FP mechanical data

mm
Dim.
Min.
Typ.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.7
0.75
F1
1.15
1.70
F2
1.15
1.70
4.95
5.2
G1
2.4
2.7
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9.3
Dia
3.2
Figure 26. TO-220FP drawing

L7
E
A
B
D
Dia
L5
L6
F1
F2
F
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 18467 Rev 2
13/19

.
Table 11.
TO-220 type A mechanical data

mm
Dim.
Min.
Typ.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
14/19
Max.
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
Doc ID 18467 Rev 2
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 18467 Rev 2
15/19
Packaging mechanical data

Table 12.
DPAK (TO-252) tape and reel mechanical data

Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
B0
10.4
10.6
1.5
12.1
12.8
1.6
20.2
16.4
50
B1
16/19
Min.
Max.
330
13.2
1.5
D1
1.5
1.65
1.85
7.4
7.6
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
40
0.25
0.35
15.7
16.3
Doc ID 18467 Rev 2
18.4
22.4
Figure 28. Tape for DPAK (TO-252)

10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
E
F
B1
K0
B0
For machine ref. only

including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
Bending radius
User direction of feed
AM08852v1
Figure 29. Reel for DPAK (TO-252)

T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 18467 Rev 2
17/19
Revision history
Revision history
12
Table 13.
Document revision history
Date
Revision
10-Feb-2011
First release.
Updated features in table and description in cover page.

Updated Table 2: Absolute maximum ratings, Table 5: On /off states,
Table 15: Normalized on resistance vs temperature, Figure 17:
Normalized VDS vs temperature and Section 4: Package mechanical
data.
17-Nov-2011
18/19
Changes
Doc ID 18467 Rev 2
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19/19

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STD10NM60ND, STF10NM60ND

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

Extremely high dv/dt avalanche capabilities

Internal schematic diagram

This FDmesh II Power MOSFET with intrinsic

Tape and reel

Doc ID 18467 Rev 2

STD10NM60ND, STF10NM60ND, STP10NM60ND

Electrical characteristics (curves)

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Doc ID 18467 Rev 2

STD10NM60ND, STF10NM60ND, STP10NM60ND

Absolute maximum ratings

Gate- source voltage

Drain current (continuous) at TC = 25 C

Drain current (pulsed)

Peak diode recovery voltage slope

Insulation withstand voltage (RMS) from all

Operating junction temperature

1. Limited by maximum junction temperature.

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Thermal resistance junction-pcb max

Maximum lead temperature for soldering

Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max)

Single pulse avalanche energy (starting

Doc ID 18467 Rev 2

STD10NM60ND, STF10NM60ND, STP10NM60ND

Gate threshold voltage VDS = VGS, ID = 250 A

VDS = 0 to 480 V, VGS = 0

Gate input resistance

f=1 MHz open drain

Total gate charge

Turn-on delay time

Doc ID 18467 Rev 2

STD10NM60ND, STF10NM60ND, STP10NM60ND

Source drain diode

Min. Typ. Max

Reverse recovery time

ISD = 8 A, di/dt = 100 A/s

Reverse recovery time

ISD = 8 A, di/dt = 100 A/s

1. Pulse width limited by safe operating area.

Doc ID 18467 Rev 2

STD10NM60ND, STF10NM60ND, STP10NM60ND

Electrical characteristics (curves)

Safe operating area for DPAK

Thermal impedance for DPAK

Thermal impedance for TO-220FP

Thermal impedance for TO-220

Safe operating area for TO-220FP

Safe operating area for TO-220

Doc ID 18467 Rev 2

STD10NM60ND, STF10NM60ND, STP10NM60ND

Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

Figure 12. Capacitance variations

Figure 13. Output capacitance stored energy

Doc ID 18467 Rev 2

400 500 600

STD10NM60ND, STF10NM60ND, STP10NM60ND

Figure 14. Normalized gate threshold voltage