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q (Vbi- VR)
q VR
q VF
=qV
qV
bi o qV
qVoq(V
- qV-V )
bi
F
Electron injection
q (Vbi- VR)
q VR
q VF
=qV
qV
bi o qV
qVoq(V
- qV-V )
bi
F
qVbi
kT
qVbi qV
kT
= n p0
qV
e kT
Hole injection
In the equilibrium
pn0 qVbi / kT
=e
p p0
(1)
pn
= e q(Vbi V ) / kT
p p0
(2)
(3)
pn = pn0 eqV / kT
The concentration of injected holes exponentially increases with the forward voltage
3
n p = n p 0 eqV / kT
qVo - qV
-xp0
xn0
pn = pn0 eqV / kT
n p = n p n p0 = n p0 (eqV / kT 1)
The change in the hole concentration in the n-region:
=qV
qV
bi o
qV
q VF
qVo - qV
=qVo qV
qVo - qV
-xp0
xn0
The injected carriers diffuse into n- and p-portions of the junctions and
RECOMBINE along with DIFFUSION;
SpaceCharge
region
SpaceCharge
region
p
={Income} {Outcome} = 0 , or
t
pn pn0
2 pn
+ Dp
=0
2
p
x
The solution is:
pn ( x ) = pn (0) e
x / Lp
where
Lp = p D p
is the diffusion length of the holes.
8
pn ( x ) = pn (0) e
x / Lp
n p ( x p ) n p0 eqV / kT e
pn ( xn ) pn0 eqV / kT e
x p / Ln
(for np >> np0)
xn / L p
n p ( x p ) = n p 0 (eqV / kT 1) e
pn ( xn ) = pn0 (eqV / kT 1) e
xp
xn
x p / Ln
xn / L p
10
n p ( x p ) = n p 0 (eqV / kT 1) e
pn ( xn ) = pn0 (eqV / kT 1) e
x p / Ln
xn / L p
(
)
Qn = qA n p ( x ) dx = qAn p 0 eqV / kT 1 Ln
0
I =Qn/n+ Qp/p
Total injected
electrons
per unit area
Total injected
holes
per unit area
11
Qn = qAn p 0 eqV / kT 1 Ln
Q p = qApn0 eqV / kT 1 L p
I =Qn/n+ Qp/p
I = qA e
qV / kT
Hole current
Lp
Ln
1 n p 0 + pn0
n
p
Ln, p = Dn, p n, p
I = qA e
qV / kT
>
n, p = L2n, p / Dn, p
Dp
Dn
1 n p0
+ pn0
Ln
Lp
12
I = qA e
qV / kT
Dp
Dn
1 n p0
+ pn0
Ln
Lp
where
Dp pn0 Dnn p0
+
IS = q A
Lp
Ln
13
1
Forward current
14
q (Vbi- VR)
=qV
qV
bi o
q VR
qV
qVo - qV
V<0, the reverse bias. The external voltage increases the built-in barrier.
As compared to the equilibrium, even less electrons and holes can overcome the barrier
15
n p = n p 0 eqV / kT << n p 0
(V < 0)
(V < 0)
note that
qV
exp 0
kT
I IS
Dp pn0 Dnn p0
IS = q A
+
Lp
L
n
17
I IS
at negative V
Reverse current
18
qV
I = I S exp
kT
IS
1.
2.
3.
20