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AP4955GM-HF

Halogen-Free Product

Advanced Power
Electronics Corp.

DUAL P-CHANNEL ENHANCEMENT


MODE POWER MOSFET
D2

Simple Drive Requirement

D2
D1

Low Gate Charge

D1

Fast Switching Characteristic


G2

RoHS Compliant & Halogen-Free

BVDSS

-20V

RDS(ON)

45m

ID

-5.6A

S2
S1

G1

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.

D2

D1

G2

G1

S2

S1

Absolute Maximum Ratings


Parameter

Symbol
VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25
ID@TA=70

Rating

Units

-20

+12

-5.6

-4.5

-20

Continuous Drain Current


Continuous Drain Current
1

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

Linear Derating Factor

0.016

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-a

Parameter
Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

Value

Unit

62.5

/W

1
201009304

AP4955GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

-20

-0.01

V/

VGS=-4.5V, ID=-5A

45

VGS=-2.5V, ID=-4A

65

-0.5

-1.2

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA

RDS(ON)

Static Drain-Source On-Resistance

VGS=0V, ID=-250uA
2

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

gfs

Forward Transconductance

VDS=-5V, ID=-5A

IDSS

Drain-Source Leakage Current

VDS=-20V, VGS=0V

-1

uA

Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V

-25

uA

Gate-Source Leakage

VGS=+12V, VDS=0V

+100

nA

ID=-5A

19

30

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=-16V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

nC

VDS=-10V

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=-1A

10

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=-10V

52

ns

tf

Fall Time

RD=10

24

ns

Ciss

Input Capacitance

VGS=0V

1400 2240

pF

Coss

Output Capacitance

VDS=-20V

270

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

230

pF

Min.

Typ.

IS=-1.6A, VGS=0V

-1.2

Source-Drain Diode
Symbol
VSD

Parameter
2

Forward On Voltage

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=-5A, VGS=0V,

32

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

22

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP4955GM-HF
60

70

-5.0V

T A = 25 C

-4.5V
50

40

-3.0V

30

-5.0V

T A = 150 C

50

-ID , Drain Current (A)

-ID , Drain Current (A)

60

-2.5V
20

-4.5V
40

30

-3.0V
20

-2.5V

10

10

V G =- 2.0 V

V G =- 2.0 V
0

0
0

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

55

I D = -4 A
T A =25 o C

I D =-5A
V G =-4.5V

1.4

Normalized RDS(ON)

RDS(ON) (m)

50

45

40

35

1.2

1.0

0.8

30

0.6

-50

-V GS , Gate-to-Source Voltage (V)

100

150

T j , Junction Temperature ( C)

Fig 4. Normalized On-Resistance


v.s. Junction Temperature
1.4

1.2

Normalized -VGS(th) (V)

-IS(A)

50

Fig 3. On-Resistance v.s. Gate Voltage

T j =150 o C

T j =25 o C

1.0

0.8

0.6

0.4

0.2

0.4

0.6

0.8

1.2

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.4

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.


Junction Temperature
3

AP4955GM-HF
f=1.0MHz
10000

I D =-5A
V DS =-16V

10

C (pF)

-VGS , Gate to Source Voltage (V)

12

C iss
1000

C oss
C rss

100

10

20

30

40

50

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

17

21

25

29

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthja)

100

10
Operation in this area
limited by RDS(ON)

-ID (A)

13

-V DS , Drain-to-Source Voltage (V)

1ms
10ms

100ms
1s
0.1

T A =25 C
Single Pulse

DC

Duty factor=0.5

0.2

0.1

0.1
0.05

0.02
0.01

PDM
0.01

Single Pulse

T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W

0.001

0.01
0.01

0.1

10

100

0.0001

0.001

0.01

-V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

0.1

10

100

1000

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
-4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform

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