TOSHIBA

Discrete Semiconductors

2SK1358

Industrial Applications

Field Effect Transistor

Unit in mm

Silicon N Channel MOS Type (-MOS II.5)

High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
Low Drain-Source ON Resistance
- RDS(ON) = 1.1 (Typ.)
High Forward Transfer Admittance
- Yfs = 4.0S (Typ.)
Low Leakage Current
- IDSS = 300A (Max.) @ VDS = 720V
Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
Absolute Maximum Ratings (Ta = 25C)
CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

900

Drain-Gate Voltage (RGS = 20k)

VDGR

900

Gate-Source Voltage

VGSS

30

DC

ID

Pulse

IDP

27

Drain Power Dissipation

(Tc = 25C)

PD

150

Channel Temperature

Tch

150

Storage Temperature Range

Tstg

-55 ~ 150

SYMBOL

MAX.

UNIT

Thermal Resistance, Channel to Case

Rth(ch-c)

0.833

C/W

Thermal Resistance, Channel to Ambient

Rth(ch-a)

50

C/W

Drain Current

Thermal Characteristics
CHARACTERISTIC

This transistor is an electrostatic sensitive device. Please handle with care.

TOSHIBA CORPORATION

1/6

2SK1358
Electrical Characteristics (Ta = 25C)
CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

IGSS

VGS = 25V, VDS = 0V

100

nA

Drain Cut-off Current

IDSS

VDS = 720V, VGS = 0V

300

V(BR) DSS

ID = 10mA, VGS = 0V

900

Vth

VDS = 10V, ID = 1mA

1.5

3.5

Drain-Source ON Resistance

RDS (ON)

ID = 4A, VGS = 10V

1.1

1.4

Forward Transfer Admittance

Yfs

VDS = 20V, ID = 4A

2.0

4.0

Input Capacitance

Ciss

1300

1800

100

150

Drain-Source Breakdown Voltage

Gate Threshold Voltage

VDS = 25V, VGS = 0V,

f = 1MHz

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

180

260

Rise Time

tr

25

50

Switching
Time

pF

Turn-on Time

ton

40

80

Fall Time

tf

20

40

Turn-off Time

toff

100

200

120

240

70

50

MAX.

UNIT

Total Gate Charge

(Gate-Source Plus Gate-Drain)

Qg

Gate-Source Charge

Qgs

Gate-Drain (Miller) Charge

Qgd

VDD = 400V, VGS = 10V,

ID = 9A

ns

nC

Source-Drain Diode Ratings and Characteristics (Ta = 25C)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN.

TYP.

Continuous Drain Reverse Current

IDR

Pulse Drain Reverse Current

IDRP

27

Diode Forward Voltage

VDSF

-2.0

2/6

IDR = 9A, VGS = 0V

TOSHIBA CORPORATION

2SK1358

TOSHIBA CORPORATION

3/6

2SK1358

4/6

TOSHIBA CORPORATION

2SK1358

TOSHIBA CORPORATION

5/6

2SK1358
f

Notes

The information contained here is subject to change without notice.

The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.

6/6

TOSHIBA CORPORATION