Professional Documents
Culture Documents
AK
BUK9217-75B
N-channel TrenchMOS logic level FET
Rev. 02 3 February 2011
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source voltage
Tj 25 C; Tj 185 C
75
ID
drain current
VGS = 5 V; Tmb = 25 C;
see Figure 1; see Figure 3
64
Ptot
167
VGS = 10 V; ID = 25 A; Tj = 25 C
13.4 15
VGS = 5 V; ID = 25 A; Tj = 25 C;
see Figure 10; see Figure 11
14.4 17
ID = 64 A; Vsup 75 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 C; unclamped
147
mJ
VGS = 5 V; ID = 25 A; VDS = 60 V;
Tj = 25 C; see Figure 12
14
nC
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
BUK9217-75B
NXP Semiconductors
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
gate
drain
Simplified outline
Graphic symbol
D
mb
source
mb
G
mbb076
2
1
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Type number
BUK9217-75B
BUK9217-75B
Package
Name
Description
Version
DPAK
SOT428
2 of 16
BUK9217-75B
NXP Semiconductors
4. Limiting values
Table 4.
Limiting values
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj 25 C; Tj 185 C
75
VDGR
drain-gate voltage
RGS = 20 k
75
VGS
gate-source voltage
ID
drain current
-15
15
64
45
IDM
Tmb = 25 C; pulsed; tp 10 s;
see Figure 3
256
Ptot
167
Tstg
storage temperature
-55
185
Tj
junction temperature
-55
185
Source-drain diode
IS
source current
Tmb = 25 C
64
ISM
pulsed; tp 10 s; Tmb = 25 C
256
ID = 64 A; Vsup 75 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 C; unclamped
147
mJ
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
EDS(AL)S
03no50
75
ID
(A)
Pder
(%)
50
80
25
40
0
0
Fig 1.
03no96
120
50
100
150
Tmb (C)
BUK9217-75B
200
Fig 2.
50
100
150
Tmb (C)
200
3 of 16
BUK9217-75B
NXP Semiconductors
03no49
103
ID
(A)
tp = 10 s
102
100 s
DC
10
1 ms
10 ms
100 ms
10-1
1
Fig 3.
102
10
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9217-75B
4 of 16
BUK9217-75B
NXP Semiconductors
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
0.95
K/W
71.4
K/W
03nk52
1
= 0.5
Zth(j-mb)
(K/W)
101
0.2
0.1
0.05
0.02
102
tp
T
single shot
tp
103
106
105
104
103
102
101
1
tp (s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9217-75B
5 of 16
BUK9217-75B
NXP Semiconductors
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
75
70
VGS(th)
1.1
1.5
0.4
2.3
500
IDSS
0.02
IGSS
VGS = 15 V; VDS = 0 V; Tj = 25 C
100
nA
100
nA
VGS = 4.5 V; ID = 25 A; Tj = 25 C
19
VGS = 5 V; ID = 25 A; Tj = 185 C;
see Figure 10; see Figure 11
40
VGS = 10 V; ID = 25 A; Tj = 25 C
13.4
15
VGS = 5 V; ID = 25 A; Tj = 25 C;
see Figure 10; see Figure 11
14.4
17
ID = 25 A; VDS = 60 V; VGS = 5 V;
Tj = 25 C; see Figure 12
35
nC
nC
14
nC
3022
4029
pF
290
348
pF
115
158
pF
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
td(on)
tr
rise time
td(off)
30
ns
102
ns
101
ns
tf
fall time
58
ns
LD
2.5
nH
LS
7.5
nH
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 C;
see Figure 13
0.85
1.2
trr
96
ns
Qr
recovered charge
138
nC
BUK9217-75B
6 of 16
BUK9217-75B
NXP Semiconductors
03no46
160
ID
(A)
03no45
26
10
7
6
5
RDSon
(m)
22
120
4.4
4.2
4
80
18
3.8
3.6
3.4
3.2
40
14
3
2.8
VGS (V) = 2.6
0
10
0
Fig 5.
VDS (V)
10
101
ID
(A)
Fig 6.
11
VGS (V)
15
100
ID
(A)
102
75
min
typ
max
103
50
104
25
105
106
Tj = 185 C
0
0
VGS (V)
Fig 7.
Tj = 25 C
BUK9217-75B
Fig 8.
VGS (V)
7 of 16
BUK9217-75B
NXP Semiconductors
03no99
2.5
VGS(th)
(V)
2.0
03no47
35
RDSon
(m)
10
30
max
25
1.5
typ
1.0
20
min
15
0.5
0.0
60
Fig 9.
10
10
80
150
Tj (C)
220
2.4
40
80
120
ID (A)
160
5
VGS
(V)
VDD = 14 V
4
VDD = 60 V
1.6
3
2
0.8
1
0
60
0
10
80
150
Tj (C)
220
BUK9217-75B
10
20
30
QG (nC)
40
8 of 16
BUK9217-75B
NXP Semiconductors
03no41
100
IS
(A)
75
50
25
Tj = 185 C
0
0.0
0.3
Tj = 25 C
0.6
0.9
VSD (V)
1.2
BUK9217-75B
9 of 16
BUK9217-75B
NXP Semiconductors
03no43
60
gfs
(S)
40
20
0
0
10
20
30
40
ID (A)
50
BUK9217-75B
10 of 16
BUK9217-75B
NXP Semiconductors
03no48
5000
C
(pF)
Ciss
3750
2500
Coss
Crss
1250
0
10-1
10
VDS (V)
102
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK9217-75B
11 of 16
BUK9217-75B
NXP Semiconductors
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A1
b2
E1
mounting
base
D2
D1
HD
L2
1
L1
b1
e
e1
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A1
b1
b2
D1
D2
min
E1
min
e1
HD
L1
min
L2
y
max
mm
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
4.0
6.73
6.47
4.45
2.285
4.57
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
06-02-14
06-03-16
BUK9217-75B
12 of 16
BUK9217-75B
NXP Semiconductors
8. Revision history
Table 7.
Revision history
Document ID
Release date
Change notice
Supersedes
BUK9217-75B v.2
20110203
BUK9217_75B v.1
Modifications:
BUK9217_75B v.1
BUK9217-75B
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
20040122
Product data
13 of 16
BUK9217-75B
NXP Semiconductors
9. Legal information
9.1
Document status[1][2]
Product status[3]
Definition
Development
This document contains data from the objective specification for product development.
Qualification
Production
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
BUK9217-75B
14 of 16
BUK9217-75B
NXP Semiconductors
9.4
Export control This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
BUK9217-75B
15 of 16
BUK9217-75B
NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.