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Amateur radio equipment That in the United States VMOSFETs their fixed Have
found place in the DIY practice ben, for example, shows the radio amateur teurs
Handbook ARRL 1980 [1], where a short time after the market launch management
of VMOSFETs building instructions thus emerged for CW QRP transmitter. s
properties There are now a large number of VMOSFET types from different
manufacturers ler. Before you experiment with it, should to both their positive and
negative tive peculiarities know better. How MOSFETs are constructed in principle,
be as assumed. An electron current through the semiconductor crystal passing
through a narrowing (channel) whose conductivity control purely electrotrostatically is performed by the gate electrode. The gate is through a very thin
metal talloxidschicht from the actual crystal isolated. In the n-channel type of
electron flows tronenstrom it from the source (negative) to drain (positive pole).
Image 1 of [2] shows the structure of such a semiconductor component in detail. At
a gate voltage of 0 V only flows a practically completely negligible Residual current
in nano-ampere range, ie, the Source / drain path is complete charge locks. From a
positive bias of about 3.3 V, the channel begins to conduct, and the on-resistance (R
DS on ) Varies depending by Type few ohms to fractions an ohm from. Here cope
VMOS- FETs with source / drain voltages of up to 1000 V currents from 1.5 A to 100
A. It is in fact amazing Components, the extremely fast switching ter in the
industrial and entertain- tronics find wide application. Because of the hexagonal,
honeycomb-like Structure of the gate layers, these FETs as HEXFETs (registered
Trademarks of the market leader internationalization tional Rectifier) referred. The
term VMOSFET is because in this Arrangement of the current vertically through the
Semiconductor chip flows. Since the output current as an electron tube through the
Input voltage, not a current controlled as in bipolar transistors is the complete
isolation causes such as in tubes (at least at low frequency quences) a power-free
control. In the Unlike tubes, where at positive tive Gitterspannug a grid current
flows, This effect falls away at the gate. It follows that the positive Bias voltage for
linear operation on single- can produce ste way. Due to the extremely high input
resistance is the (power armaments) reinforcement theory against unintentional
Finally, in practice it is bi-over polar transistors at least very high. Another welcome
feature of VMOSFETs is the lack of a secondary ary breakthrough. A thermal high run
and the associated self-reactive disorder, the experimenters with normal len, bipolar
transistors-suffering Familiar experience, there is not so. Now come the negative
sides: by the extremely thin insulating layer under the gate can be static lead
channel - to the punch gate; during installation are therefore the same precautions
to consider measures such as electrically for trostatically sensitive components such
as CMOS ICs or small power MOSFETs are well known. s Restrictions The system
gate electrode - extremely thin Metal oxide layer - forms a channel achieved
considerable input capacity and an even larger output capacitance. This is a Reason
why a high-resistance triggering tion by HF at the gate practically not is possible.
The second is that in all ro bustness of the source / drain path of the gate of
standard types with respect to the source are only voltages of up to 20 V allowed.

Therefore, resonant circuits are on Gate not possible; Resonant peak could fatally
high gate voltage does effect. Similarly, a classical RF A power amplifier circuit in
the C mode not realize, because it is also very high drive voltages required weighing
ren. A except only QRP transmitter for output powers up to 5 W. By a passive, lowtriggering tion can be the problems outlined deal. However, then the work must
ating point in B or AB-range, what neither of CW or FM applications conditions of the
poorer efficiency of a represents certain disadvantage. Important parameters are
thus the dynamic Mixes internal resistance R DS on , The input input capacitance C
iss , The output capacitance C oss and of course the allowable currents and voltages
at the source / drain Route. Table 1 shows the most important data are some types
tested for comparison compiled. The fact that the Exceed capacity with increasing
power proportional increase results from the fact founds that switched internally in
the production times only larger honeycomb surfaces parallel- be switched. The
power loss thereby takes but only conditionally (below proportional) to. As a
conclusion follows found that it is better several strong weaker types of parallel
connected externally. This is easily possible because the Production variations are
minimal. Because manufacturers can therefore also particle allelschaltungen
without Stromausgleichs- resistors, etc. explicitly. Conditions tion are, however, a
semiconductor Production batch. The switching times of VMOSFETs are in the range
of a few nanoseconds; so that is natural for the radio amateur only one High
frequency gain in the short-wave range possible. When comparing different ferent
types should make sure that most manufacturers current for a Specify crystal
temperature of 25 C. The is understandably an attractive acting VMOSFETs as a
short-wave transmitter amplifier MARTIN STEYER - DK7ZB It is actually surprising
that VMOSFETs as transmission amplifiers hardly Have been included in the
German-speaking amateur radio literature. So here's advice for the special
properties of this construction elements and their circuitry as well as the idea of two
slightly nachbau efficient power amplifier modules. Figure 1: Structure of a
VMOSFETs (International national Rectifier) Table 1: Characteristics of some of
Transmit amplifier suitable VMOSFETs
Type
R DS on

U max I
[V]
[pF]

IRF-510
81
IRF-530
250
IRF-620
100
IRF-710
30

Duration I

imp N
[A]

laughed
[A]

Ca

[w]

C from
[pF]

[]
100

4.0

20

100

10

56

200

3.3

18

400

1.2

43

180

0.54
88

670

0.16
50

260

0.8
3.6

36

170

 FA 820 7/97
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the completely unre- for the application, however, listischer value. At 100 C the
permissible is sige power then lower by 30 to 40%. s circuit technology For KW
power amplifiers are single-ended and total gentaktschaltungen possible, whereby
the total gentaktvarianten a larger useful Have frequency range. Own experiments
ments showed that with simple Wiring up to the 15 m band quite good Can achieve
performance gain; shown above are N- complicated circuits tant in the only cover
operation question come. That for the reasons given above only a passive, lowimpedance drive practicable, does not interfere with further, since AB and B
operation with a few volts RF at the gate, so minimal control performance achieved
substantial output powers are possible. In this respect one must for pure tele grafieor FM operation on a working set point of the class B. This has Although a lower
efficiency Episode produced, but also achieved in return considerably less
harmonics, so that in the Practice usually a bipartite low-pass filter at Output
sufficient Oberwellenunter- suppression effect. For SSB is a working Class AB point is
required; the rest flows can be without problems with a Zener diode and a voltage
divider switched provide. The relationship between operating voltage and power
output opens up by simple consideration: arrival taken, is the operating voltage 12
V, it would ideally the positive Half wave just this peak voltage of the Generate RF
at the load resistor. After the known formula U B 2 P out = 2 R it follows that for a
given operating voltage determines only the load resistance, how high the
deliverable effective RF power Stung is. This also explains why it is equipped with
12 V so problematic, high conductor stungen to produce. Is at 100 W RF this
example, only 0.7 load resistor. Of course, you must also at VMOSFETs Note that
voltage, current and supply power dissipation within the permissible limit data (plus
a certain safety) . remain The following values have proved in practice proved
useful: The operating voltage U B should not exceed 40% of the allowable Be the
source / drain voltage. If the Peak current to the permissible continuous current
does not exceed, one is always on the safe side. The output RF power should be
maximum in the area of power loss Stung of VMOSFETs lie, safety Half about 30 to
50% below. This has you up to a point, the limits of Operating parameters specified.
In order to avoid that in case of bad Contact the antenna relay or false shear load
dangerously high voltage peaks zen occur, you can at the drain a few Amateur radio
equipment FA 7/97 821 Table 2: Examples of recoverable VMOSFETs with output
powers Configuration

80 m 40 m 30 m 20 m 17 m 15 m 12 m
10 m
1 IRF-510, transformer 1: 9, U B = 24 V 45 W 40 W
20 W 20 W

35 W 26 W 24 W 22 W

1 IRF-530, transformer 1: 4, U B = 35 V 50 W 48 W
33 W 30 W
2 IRF-510 in push-pull U B = 36 V
30 W 30 W

42 W 42 W

46 W 44 W 38 W 35 W
38 W 35 W 35 W 35 W

D3 D4 C1 C2 R2 R3 C5 Dr1 IRF-530 + 25 ... 30V C4 D2 C6 C7 D1 R1 Tr1 Tr2 G D S P

a RF 50 P e RF 50 Figure 4: Assembly plan of the circuit board for the singleended circuit. The placement takes place on the ladder page. Figure 3: Wiring the
board for the single-ended circuit 10 / 40V C5 22n C4 2x10n / 500V Tr2 Tr1 T1 IRF530 C1 10n R1 22 C2 22n R2 5k D1 4.7V / 1W C7 22n R3 2.2k D2 D3 D4 Dr1 P a 30
50 P e 1 ... 2W 50 + U D2 ... D4 30V / 1.3W D S G C3 22n Figure 2: Single ended
circuit with output transformer 1: 4 ANT-filter 50 2x10n / 500V + U b Drain
VMOSFET Figure 5: drain circuit in single ended circuit with Output transformer 1:
9th The over- exchanger consists of 3 x 7 Wdg., trifilar on one Amidon toroid T 1302. Antenna 50 + U b Drain VMOSFET C L Throttle Figure 6: Output adjustment
using a T-member.
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Amateur radio equipment FA 822 7/97 Zener diodes in series with the caps the
drain voltage spikes provide. Their Total Zener voltage should total at about 90% of
the maximum source / drain Voltage are. At 100 V MOSFETs So would eg three 30VZ-diodes in Question. An additional security against excessive Voltage spikes at
the gate, two oppositely connected in series Zener diodes (Each 18 V) offer to
ground. For linear operation, this results may significant distortion. For this Reason,
it is better to levels more Pay attention. In the single-ended circuit The gating runs
performing a downconverter 4: 1 (Unbalanced / unbalanced), which on the gate side
(source) resistance was 12.5 yields. He is a particle- tial load resistance 18-22
particle- allelgeschaltet. So that, in a Control power 1-3 W at 50 to Under no
circumstances an excessively high voltage at the gate . occur s Eintaktendstufe
Depending on the output power, drain voltage and VMOSFET type can be easily to
be wound output transformer with the Transmission ratios of 1: 1 (50 , only
exceptionally useful), 1 in 4 (12.5 Load) and 1: 9 (5.5 load) Installation. On the
lower frequency bands is the usable output well within the Range of the theoretical
maximum performance. Table 2 summarizes the measured values for Compared
together. Figure 2 shows the circuit for the variant 12.5 at the drain, one with a
Exchanger 5 to 50 is from Figure 5 significantly. A construction manual with the
IRF 530 and an output transformer 1: 4 I have already described in [4]. There is a
simple relay circuit other optionally, ensuring that always antenna side relay closes
first. With this circuit (IRF-530, single ended, Transformer 1: 4) I have in test mode
at an operating voltage of 45 V on 3.5 MHz RF power of about 75 W to an ohmic
load resistor 50 achieved. If you look in practice for safety's sake settle for less
should be seen here but the performance assets of such transistors! In binding
operation also has the T Circuit possible that amounted to almost bige input and
output resistances with two inductors and a capacitor as 0.47 RF Set. 50 + U b
D S G 270 2W 270 1W 18 Tr1 T1 IRF-510 T2 IRF-510 220 1W Tr2 Tr3 RF Outputs. 50
22n 22n 2x22n 2x22n 22n 22n 4.7k 1W 1W ZD 4.7 1k 1.5k D S G Figure 7: To

clock circuit with 2 x IRF-510th Tr1 - 3 x 8 turns. 0.5 mm CuL, trifilar on Amidon T
68-2; Tr2 - 3 x 7 Wdg. 1-mm copper wire, trifilar on Amidon T 130-2; Tr3 - 2 x 7
Wdg. 1-mm copper wire, bifilar on Amidon T 130-2 Figure 9: Placeplan the board for
the Push-pull circuit. The charging is done on the printed page. IRF-510 18 Tr1 Tr2 G
D S RF Input. IRF-510 G D S RF outputs. Tr3 2x22n 270 1k 4.7k ZD 4.7 22n 2x22n
0.47 270 1.5k 22n 22n + U b 220 Figure 8: Routing the board for the push-pull
circuit
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Amateur radio equipment FA 7/97 823 used resonant transformation member can
be (Figure 6). Sizing formulas to be found in the ARRL manual book [1]. s push-pull
output stage A push-pull circuit (Figure 7) with 2 IRF-510 is somewhat more
complicated: With the bilateral filar dining throttle is the load resistance stood from
drain to drain at 50 , How- recently symmetrical. For this reason, even a 1: 1
transformer balanced / un- symmetrical downstream, so that the Output circuit
existing two toroids needed. The control for a power of 2 W HF measured values are
also made Table 2 below. By the push-pull circuit occur low gere effective capacity
of VMOSFETs in appearance; of performance used weaker type IRF-510 has because
of the also overall smaller chips of house ringere input and output capacitors as IRF530. The result is a higher effi- ciency at the higher frequency amateur teurbndern.
The entrance was to improve the Input matching and to reduce any impact on the
tax transmitter, a 3-dB attenuator of Wi resistors connected in series. This means no
NEN disadvantage, because the gain in the Push-pull operation is slightly higher. s
harmonic filters Since all circuit variants broadband working work are still relevant,
depending on the band de output filter (Figure 10) is required. You be a doublemembered pi filter with each two inductors (Amidon toroids of Excluded size T 50)
and three capacitors leads. For the capacities are 500 V Ceramic capacitors are
used. The filters are calculated to give the "Crooked" capacities by each particle
allelschalten of two standard values of the Can be realized series E12. Table 3
contains holds the component values for the different those bands. The filters are
housed externally and are suitable for capacities up to 100 W. Of course, they can
also be for use other projects. It recommends itself, this filter also in receive mode
looped to leave. This improves the Preselection of the receiver significantly. s
construction several variants Be built on the circuits double sided Epoxidplatinen.
Here is the bottom through Ground surface. The layout consists of simple
rectangular solder pads on the the components just soldered "flat" will. Faster than
the etching method them the corresponding insulating the dividing lines by cutting
or scoring generate when no mass production aims. Figure 3 shows the circuit board
for the single-ended version, Figure 4 shows the placement. In accordance
accordingly are 8 image layout for the overall gentaktversion again and the image 9
Placement. In the center of each is a rectangular Hole cut out. Here we mounted the
VMOSFETs (TO-220 package) under comparison use of mica washers and heat flat
conductive paste on the heatsink lying. s Operating Instructions The power amplifier
modules are also available with lower operating voltage than specified to operate, it
being understood that usable output power decreases. The voltage voltage source
is not necessarily stable be lisiert; a low internal resistance but is mainly the

intermodulation lationsverhalten benefit for SSB operation. A simple stabilization

circuit is be found in [4]. Especially the Eintaktvariante with transformer transformer
1: 9 is suitable for 12 V operation. Here are 80 m 14 W RF power to achieved at 13.2
V even a few watts more. s Other variants With the help of that specified on page
821 researchers mel it is readily possible, the respective lig necessary operating
voltage for the define required performance. Basis is a supply choke 1: 1, as the
Push-pull amplifier contains. Subtract one must of course some losses, so that, in
practice, with an approximately 10% must expect higher operating voltage as in
Table 4, the values of the theoretical containing specified. If you an efficiency of 60
calculated to 70%, the achieved can ford variable currents for the MOSFETs and the
AC adapter easily determined. Parallel circuit is possible. But this rise again, the
input and output capacities. By suitable choice of Koppelkapa- capacities, the
Vorwiderstandsverhalten the influence, and their own ohmic Voltage divider for
each transistor can to an input resistance of altogether total 50 with the required
loading Stung realize. Such overall amplifier with 2 11 parallel switched IRF-710
and the full in Germany allowable power of 750 W DL9AH has been described [5]. It
works but only to 14 MHz; leave it the input capacitances no reasonable term
efficiency to more. Particularly interesting in this suggestion is the pulsed power
supply that with a "voltage nungshalbierer circuit "directly from 220 V AC voltage
(isolation transformer) the DC operating voltage (unloaded) 160 V generated. Such
a project is only for experienced amateur expensive to recommend. For lower
conductor should stungen experimentation also be quite interesting for beginners,
because the financial loss in case of defective Holds MOSFETs limited. Literature [1]
Low Power vmos Transmitter for 3.5 to 28 MHz, Chapter 6-35, The Radio Amateur's
Handbook, 57th Edition, ARRL 1980 (USA) [2] HEXFET Designer's Manual, Volume III,
pub- shed by International Rectifier, El Segundo, CA 90245 (USA) 1993 [3] The Do's
and Don'ts of Using Power HEXFETs, Application Note 936A, International Rectifier,
El Segundo, CA 90245 (USA) 1993 [4] Steyer, M., DK7ZB: linear amplifier for HF QRP
transmitter, FUNKAMATEUR 43 (1994), H. 8, S. 726 [5] Weidemann, A., DL9AH:
transistor-linear PA after DL9AH, beam 94 (1994), H. 8, 9 and 10 Table 4:
Correlation between U B and P RF out the push-pull amplifier U B [V] 30 40 50 60 80
100 120 140 P out [W] 36 64 100 144 256 400 576 784 Set. 50 Outputs. 50 C3
C2 C1 L1 L2 Figure 10: Output filter for all switch uration levels (Chebyshev, fivepole) Table 3: Dimensioning an output filter 50 / 50 for max. 100 W RF Band L 1
, L 2 C 1 , C 3 C 2 [M] [Wdg.] [Mm] * Core [PF] [PF] 160 27 0.4 T 50-2 1500 3000 (2
1500) 80 20 0.4 T 50-2 820 1640 (2 820) 40 15 0.5 T 50-2 430 (330 + 100) 860
(390 + 470) 30 13 0.5 T 50-6 300 (2 x 150) 600 (270 + 330) 20 12 0.5 T 50-6 220
440 (2 x 220) 17 10 0.8 T 50-6 160 (10 + 150) 320 (100 + 220) 15 10 0.8 T 50-6
150 300 (2 x 150) 12 9 0.8 T 50-6 120 240 (2 120) 10 8 0.8 T 50-6 100 200 (2 x
100) * CuL