FDP22N50N

FDP22N50N
N-Channel UniFETTM II MOSFET

500 V, 22 A, 220 m
Features
Description
RDS(on) = 185 m (Typ.) @ VGS = 10 V, ID = 11 A
UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
Low Gate Charge (Typ. 49 nC)

Low Crss (Typ. 24 pF)
100% Avalanche Tested
Improve dv/dt Capability
RoHS Compliant
Applications
PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
D
TO-220
MOSFET Maximum Ratings TC = 25 C unless otherwise noted

o
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP22N50N
500
Unit
V
30
-Continuous (TC = 25oC)
22
13.2
ID
Drain Current
-Continuous (TC = 100oC)

- Pulsed
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
22
EAR
Repetitive Avalanche Energy
(Note 1)
31.25
mJ
dv/dt
Peak Diode Recovery dv/dt
10
V/ns
88
(Note 2)
1000
mJ
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds
TL
(Note 1)
- Derate above 25oC
312.5
2.5
W/oC
-55 to +150
oC
300
oC
FDP22N50N
Unit
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
0.4
RCS
Thermal Resistance, Case to Sink, Typ.
0.5
RJA
Thermal Resistance, Junction to Ambient, Max.
2009 Fairchild Semiconductor Corporation

FDP22N50N Rev. C0
oC/W
62.5
1
www.fairchildsemi.com
FDP22N50N N-Channel UniFETTM II MOSFET
March 2013
Device Marking
FDP22N50N
Device
FDP22N50N
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted

Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
0.45
V/oC
A
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V,
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
10
IGSS
Gate to Body Leakage Current
VGS = 30V, VDS = 0V
100
ID = 250A, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
5.0
Static Drain to Source On Resistance
VGS = 10V, ID = 11A
0.185
0.22
gFS
Forward Transconductance
VDS = 20V, ID = 11A
24.4
VDS = 25V, VGS = 0V

f = 1MHz
2456
3200
pF
351
460
pF
24
50
pF
49
65
nC
15
nC
19
nC
22
55
ns
50
110
ns
48
110
ns
35
80
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Miller Charge
VDS = 400V, ID = 22A

VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 22A

RG = 4.7
(Note 4)
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
22
ISM
Maximum Pulsed Drain to Source Diode Forward Current
88
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 22A
1.4
trr
Reverse Recovery Time
472
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 22A

dIF/dt = 100A/s
6.5
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 22A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

FDP22N50N Rev. C0
Package Marking and Ordering Information
Figure 2. Transfer Characteristics
50
100
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
ID,Drain Current[A]
ID,Drain Current[A]
Figure 1. On-Region Characteristics
10
o
25 C
150 C
-55 C
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
0.2
0.05
0.1
0.1
1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
5
6
7
VGS,Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
0.25
VGS = 10V
0.20
VGS = 20V
150 C
25 C
10
*Notes:
1. VGS = 0V
2. 250s Pulse Test
*Note: TJ = 25 C
1
0.2
0.15
0
10
20
30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
3000
1.4
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
VGS, Gate-Source Voltage [V]
4000
0.6
1.0
VSD, Body Diode Forward Voltage [V]
10
5000
Capacitances [pF]
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
0.30
RDS(ON) [],
Drain-Source On-Resistance
*Note:
1. VGS = 0V
2. f = 1MHz
2000
1000
VDS = 100V
VDS = 250V
VDS = 400V
Crss
*Note: ID = 22A
0
0.1
0
1
10
VDS, Drain-Source Voltage [V]

FDP22N50N Rev. C0
30
10
20
30
40
Qg, Total Gate Charge [nC]
50
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation vs.

Temperature
3.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
0.0
-75
175
Figure 9. Maximum Safe Operating Area

- FDP22N50N
200
100
*Notes:
1. VGS = 10V
2. ID = 11A
0.5
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Drain Current

vs. Case Temperature
25
10s
20
1ms
10
100s
10ms
DC
Operation in This Area

is Limited by R DS(on)
*Notes:
0.1
1. TC = 25 C
15
10
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDP22N50N
Thermal Response [ZJC]
0.5
0.1
0.2
PDM
0.1
t1
0.05
t2
*Notes:
0.02
0.01
0.01
1. ZJC(t) = 0.4 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.003
-5
10

FDP22N50N Rev. C0
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
10
10
Typical Performance Characteristics (Continued)
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms

FDP22N50N Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop

FDP22N50N Rev. C0
Mechanical Dimensions
TO-220B03
Dimensions in Millimeters

FDP22N50N Rev. C0
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
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www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I64

FDP22N50N Rev. C0
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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FDP22N50N

N-Channel UniFETTM II MOSFET

RDS(on) = 185 m (Typ.) @ VGS = 10 V, ID = 11 A

Low Gate Charge (Typ. 49 nC)

MOSFET Maximum Ratings TC = 25 C unless otherwise noted

Drain to Source Voltage

Gate to Source Voltage

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

- Derate above 25oC

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Case to Sink, Typ.

Thermal Resistance, Junction to Ambient, Max.

2009 Fairchild Semiconductor Corporation

FDP22N50N N-Channel UniFETTM II MOSFET

Electrical Characteristics TC = 25oC unless otherwise noted

Drain to Source Breakdown Voltage

ID = 250A, VGS = 0V,

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125oC

Gate to Body Leakage Current

VGS = 30V, VDS = 0V

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VGS = 10V, ID = 11A

VDS = 20V, ID = 11A

VDS = 25V, VGS = 0V

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain Miller Charge

VDS = 400V, ID = 22A

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 250V, ID = 22A

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 22A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, ISD = 22A

2009 Fairchild Semiconductor Corporation

FDP22N50N N-Channel UniFETTM II MOSFET

Package Marking and Ordering Information

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs.

IS, Reverse Drain Current [A]

2. 250s Pulse Test

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

VGS, Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage