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Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y
DESCRIPTION

BUK205-50Y

QUICK REFERENCE DATA

Monolithic temperature and


overload protected power switch
based on MOSFET technology in a
5 pin plastic surface mount
envelope, configured as a single
high side switch.

SYMBOL

PARAMETER

IL

Nominal load current (ISO)

SYMBOL

PARAMETER

APPLICATIONS

VBG
IL
Tj
RON

Continuous off-state supply voltage


Continuous load current
Continuous junction temperature
On-state resistance

General controller for driving


lamps, motors, solenoids, heaters.

FEATURES
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection

PINNING - SOT426
PIN

UNIT

MAX.

UNIT

50
15
150
60

V
A
C
m

FUNCTIONAL BLOCK DIAGRAM

BATT
STATUS
POWER
MOSFET

INPUT

CONTROL &
PROTECTION
CIRCUITS
LOAD
RG

GROUND

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PIN CONFIGURATION

SYMBOL

DESCRIPTION
mb

Ground

Input

(connected to mb)

Status

Load

1 2

TOPFET
HSS

3
4 5

Fig. 2.
mb

MIN.

Fig. 3.

Battery

July 1996

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VBG

Battery voltages
Continuous off-state supply voltage

50

-VBG

Reverse battery voltages1


Repetitive peak supply voltage

External resistors:
RI = RS 4.7 k, 0.1

32

-VBG

Continuous reverse supply voltage

RI = RS 4.7 k

16

IL
PD

Continuous load current


Total power dissipation

Tmb 115 C
Tmb 25 C

15
83.3

A
W

Tstg
Tj

Storage temperature
Continuous junction temperature2

-55
-

175
150

C
C

Tsold

Lead temperature

250

II

Input and status


Continuous input current

-5

mA

IS

Continuous status current

-5

mA

II
IS

Repetitive peak input current


Repetitive peak status current

0.1
0.1

-20
-20

20
20

mA
mA

1.2

MIN.

MAX.

UNIT

kV

during soldering

Inductive load clamping


EBL

Non-repetitive clamping energy

Tmb = 150 C prior to turn-off

ESD LIMITING VALUE


SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge capacitor


voltage

Human body model;


C = 250 pF; R = 1.5 k

THERMAL CHARACTERISTIC
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

1.2

1.5

K/W

Thermal resistance
Rth j-mb

Junction to mounting base

1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.

July 1996

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

VBG

Clamping voltages
Battery to ground

VBL
-VLG

Battery to load
Negative load to ground

VBG

Supply voltage
Operating range1

MIN.

TYP.

MAX.

UNIT

IG = 1 mA

50

55

65

IL = IG = 1 mA
IL = 1 mA

50
12

55
17

65
21

V
V

40

6
-

0.1

A
A

1.5
-

2.2
0.1

4
1

mA
A

battery to ground
-

Currents

VBG = 13 V
2

IL
IB

Nominal load current


Quiescent current3

VBL = 0.5 V; Tmb = 85 C


VIG = 0 V; VLG = 0 V

IG
IL

Operating current4
Off-state load current5

VIG = 5 V; IL = 0 A
VBL = 13 V; VIG = 0 V

RON

Resistances
On-state resistance6

VBG = 13 V; IL = 7.5 A; tp = 300 s

45

60

RON
RG

On-state resistance
Internal ground resistance

VBG = 5 V; IL = 1.5 A; tp = 300 s


IG = 10 mA

70
150

90
-

MIN.

TYP.

MAX.

UNIT

35
6

60
7.5

100
8.5

A
V

1.5

2.1
2

2.7
-

V
V

INPUT CHARACTERISTICS
Tmb = 25 C; VBG = 13 V
SYMBOL

PARAMETER

CONDITIONS

II
VIG

Input current
Input clamping voltage

VIG = 5 V
II = 200 A

VIG(ON)
VIG(OFF)

Input turn-on threshold voltage


Input turn-off threshold voltage

1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

July 1996

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

PROTECTION FUNCTIONS AND STATUS INDICATIONS


Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS
SYMBOL

THRESHOLD

INPUT

STATUS

OUTPUT

Normal on-state

Normal off-state

Open circuit load1

Open circuit load

Over temperature2

Over temperature3

Short circuit load4

Short circuit load

VBG(TO)

Low supply voltage5

VBG(LP)

High supply voltage6

IL(OC)

Tj(TO)

VBL(TO)

CONDITION

TRUTH TABLE

MIN.

TYP.

MAX.

UNIT

100

350

600

mA

150

175

10.5

12

40

45

50

For input 0 equals low, 1 equals high, X equals dont care.


For status 0 equals low, 1 equals open or high.
For output switch 0 equals off, 1 equals on.

STATUS CHARACTERISTICS
Tmb = 25 C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VSG
VSG

Status clamping voltage


Status low voltage

IS = 100 A; VIG = 0 V
IS = 50 A; VBG = 13 V; VIG = 5 V

6
-

7
0.7

8
0.8

V
V

IS
IS

Status leakage current


Status saturation current7

VSG = 5 V
VSS = 5 V; RS = 0 ; VBG = 13 V

0.1
5

1
-

A
mA

RS

Application information
External pull-up resistor8

VSS = 5 V

100

1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.

July 1996

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

DYNAMIC CHARACTERISTICS
Tmb = 25 C; VBG = 13 V
SYMBOL

PARAMETER

CONDITIONS

-VLG

Inductive load turn-off


Negative load voltage1

VIG = 0 V; IL = 7.5 A; tp = 300 s


VIG = 5 V; RL 10 m

td sc

Short circuit load protection2


Response time

IL

Load current prior to turn-off

t < td sc

IL(lim)

Overload protection3
Load current limiting

VBL = 9 V; tp = 300 s

MIN.

TYP.

MAX.

UNIT

15

20

25

90

42

28

40

52

MIN.

TYP.

MAX.

UNIT

SWITCHING CHARACTERISTICS
Tmb = 25 C, VBG = 13 V, for resistive load RL = 13 .
SYMBOL

PARAMETER

CONDITIONS

During turn-on

to VIG = 5 V

td on
dV/dton

Delay time
Rate of rise of load voltage

to 10% VL

16
1

2.5

s
V/s

t on

Total switching time

to 90% VL

40

td off

During turn-off
Delay time

to VIG = 0 V
to 90% VL

30

dV/dtoff
t off

Rate of fall of load voltage


Total switching time

to 10% VL

1.2
50

2.5
-

V/s
s

MIN.

TYP.

MAX.

UNIT

CAPACITANCES
Tmb = 25 C; f = 1 MHz; VIG = 0 V
SYMBOL

PARAMETER

CONDITIONS

Cig

Input capacitance

VBG = 13 V

15

20

pF

Cbl

Output capacitance

VBL = VBG = 13 V

415

580

pF

Csg

Status capacitance

VSG = 5 V

11

15

pF

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in
current limiting until the overtemperature protection operates.

July 1996

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

40

IL / A

BUK205-50Y
VBG / V =

13

VBL
IB
II
I
VBG

IS
S

TOPFET
HSS

RS

20

VLG

VSG

IL
L

IG

5
LOAD

VIG

10

Normalised Power Derating

PD%

100

110

90

100
90

80

0.5

1
VBL / V

1.5

RON / mOhm

BUK205-50Y

70

80
70

60

60
50

50
40

40

30

30

20

20
10

10

0
0

20

40

60

80
100
Tmb / C

120

140

Fig.5. Normalised limiting power dissipation.


PD% = 100PD/PD(25 C) = f(Tmb)

20

Fig.7. Typical on-state characteristics, Tj = 25 C.


IL = f(VBL); parameter VBG; tp = 250 s

Fig.4. High side switch measurements schematic.


(current and voltage conventions)

120

30
B

IL / A

10
VBG / V

100

Fig.8. Typical on-state resistance, Tj = 25 C.


RON = f(VBG); conditions: IL = 7.5 A; tp = 300 s

BUK205-50Y

150

RON / mOhm

BUK205-50Y

VBG =

15

5V

100
13 V

10
50

typ.

50

Tmb / C

100

150

-20

20

60

100

140

180

Tmb / C

Fig.9. Typical on-state resistance, tp = 300 s.


RON = f(Tj); parameter VBG; condition IL = 1.5 A

Fig.6. Limiting continuous on-state load current.


IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V

July 1996

-60

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

BUK205-50Y

IG / mA

100 uA

IL

BUK205-50Y

CLAMPING
10 uA

1 uA

3
OPERATING

VIG = 3 V

100 nA

HIGH VOLTAGE
1

10 nA

QUIESCENT

VIG = 0 V

1 nA

20

10

30
VBG / V

40

60

50

-60

IG / mA

20

60
Tj / C

100

140

180

Fig.13. Typical off-state leakage current.


IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V.

Fig.10. Typical supply characteristics, 25 C.


IG = f(VBG); parameter VIG

-20

BUK205-50Y

200

II / uA

BUK205-50Y

VBG / V =

150

VBG / V =

7
13

100
13

1
50

50

0
-60

-20

20

60
Tj / C

100

140

180

Fig.11. Typical operating supply current.


IG = f(Tj); parameter VBG; condition VIG = 5 V

100 uA

IB

4
VIG / V

Fig.14. Typical input characteristics, Tj = 25 C.


II = f(VIG); parameter VBG

BUK205-50Y

100

II / uA

BUK205-50Y

80

10 uA
60

1 uA
40

100 nA
20

10 nA
-60

-20

20

60
Tj / C

100

140

180

30

20

50

40

VBG / V

Fig.12. Typical supply quiescent current.


IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V

July 1996

10

Fig.15. Typical input current, Tj = 25 C.


II = f(VBG); condition VIG = 5 V

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

VIG / V

3.0

BUK205-50Y

BUK205-50Y

IS

10 uA

BUK205-50Y

2.5

1 uA
VIG(ON)

2.0

100 nA

VIG(OFF)

1.5

10 nA

1.0
-60

-20

20

60
Tj / C

100

140

-60

180

VIG / V

20

60
Tj / C

100

140

180

Fig.19. Typical status leakage current.


IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V

Fig.16. Typical input threshold voltages.


VIG = f(Tj); conditions VBG = 13 V, IL = 80 mA

8.0

-20

BUK205-50Y

500

IS / uA

BUK205-50Y

400
7.5

300

200
7.0

100

6.5
-60

-20

20

60
Tj / C

100

140

180

IS / mA

0.4

0.6

0.8

1
1.2
VSG / V

1.4

1.6

1.8

Fig.20. Typical status low characteristic, Tj = 25 C.


IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A

Fig.17. Typical input clamping voltage.


VIG = f(Tj); conditions II = 200 A, VBG = 13 V

20

0.2

BUK205-50Y

VSG / V

BUK205-50Y

0.8

15

0.6

10
0.4

5
0.2

10

-60

VSG / V

Fig.18. Typical status characteristic, Tj = 25 C.


IS = f(VSG); conditions VIG = VBG = 0 V

July 1996

-20

20

60
Tj / C

100

140

180

Fig.21. Typical status low voltage, VSG = f(Tj).


conditions IS = 50 A, VIG = 5 V, VBG = 13 V, IL = 0 A

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

VSG / V

8.0

BUK205-50Y

BUK205-50Y

VBG(LP) / V

47

BUK205-50Y

46

VIG / V =

off

7.5

45
0
7.0

on

44

43

6.5
-60

-20

20

60
Tj / C

100

140

-60

180

IL(OC) / mA

BUK205-50Y

700

20

60
Tj / C

100

140

180

Fig.25. Supply typical overvoltage thresholds.


VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 80 mA

Fig.22. Typical status clamping voltage, VSG = f(Tj).


parameter VIG; conditions IS = 100 A, VBG = 13 V

800

-20

VBG / V

65

BUK205-50Y

max.

600
60

500

IG =
1 mA

typ.

400

10 uA

300

55

200
min.
100
50

0
-50

50

100

150

200

-60

-20

20

60
Tj / C

Tmb / C

Fig.23. Low load current detection threshold.


IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V

VBG(TO) / V

100

140

180

Fig.26. Typical battery to ground clamping voltage.


VBG = f(Tj); parameter IG

BUK205-50Y

30

IL / A

BUK205-50Y

25

on
20
3

off

15

10
1

0
-60

-20

20

60
Tj / C

100

140

0
-25

180

-15

-10

-5

VLG / V

Fig.24. Supply typical undervoltage thresholds.


VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 80 mA

July 1996

-20

Fig.27. Typical negative load clamping characteristic.


IL = f(VLG); conditions VIG = 0 V, tp = 300 s, 25 C

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

VLG / V

-10

BUK205-50Y

BUK205-50Y

IL / A

BUK205-50Y

IL =

-12

-10
1 mA

-14

-20

-16
7.5 A
-18

-30

tp = 300 us
-20

-40
-1.2

-22
-60

-20

20

60
Tj / C

100

140

180

VBL / V

-0.8

-0.6
VLB / V

-0.4

-0.2

Fig.31. Typical reverse diode characteristic.


IL = f(VBL); conditions VIG = 0 V, Tj = 25 C

Fig.28. Typical negative load clamping voltage.


VLG = f(Tj); parameter IL; condition VIG = 0 V.

65

-1

BUK205-50Y

10 nF

Cbl

BUK205-50Y

IL =
tp = 300 us

4A

60

1 mA
1 nF

100 uA
55

50

100 pF

-60

-20

20

60
Tj / C

100

140

180

10

20

30

40

50

VBL / V

Fig.32. Typical output capacitance. Tmb = 25 C


Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V

Fig.29. Typical battery to load clamping voltage.


VBL = f(Tj); parameter IL; condition IG = 5 mA.

IG / mA

BUK205-50Y

60

IL / A

BUK205-50Y
VBL(TO) typ.

current limiting

50
tp =

40

-50

300 us

30
-100

50 us
i.e. before short
circuit load trip

20
10

-150
-20

-15

-10
VBG / V

-5

10

15

20

25

VBL / V

Fig.30. Typical reverse battery characteristic.


IG = f(VBG); conditions IL = 0 A, Tj = 25 C

July 1996

Fig.33. Typical overload characteristic, Tmb = 25 C.


IL = f(VBL); condition VBG = 13 V; parameter tp

10

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

60

IL / A

BUK205-50Y

BUK205-50Y

VBL(TO) / V

15

BUK205-50Y

14

50

13

typ.

40

12
11
10

30

20

8
7

10

0
-50

50

100

150

200

-60

-20

20

60
100
Tmb / C

Tmb / C

VBL(TO) / V

180

Fig.36. Typical short circuit load threshold voltage.


VBL(TO) = f(Tmb); condition VBG = 13 V

Fig.34. Typical overload current, VBL = 9 V.


IL = f(Tmb); conditions VBG = 13 V; tp = 300 s

12

140

BUK205-50Y

10

11

Zth j-mb / (K/W)

BUK205-50Y

D=
1

0.5

10

0.2
0.1
0.1

0.05

PD

tp

D=

0.02

0.01
100n

8
0

10

20
VBG / V

30

40

Fig.35. Typical short circuit load threshold voltage.


VBL(TO) = f(VBG); condition Tmb = 25 C

July 1996

0
1u

10u

100u

1m
t/s

10m

100m

tp
T
t

10

Fig.37. Transient thermal impedance.


Zth j-mb = f(t); parameter D = tp/T

11

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

MECHANICAL DATA
Dimensions in mm

10.3 MAX

4.5 MAX
1.4 MAX

2.5

15.4

11 MAX

Net Mass: 1.5 g

0.85 MAX
(x4)
3.4

1.7

1.7

3.4

0.5

Fig.38. SOT426
mounting base connected to centre pin (cropped short)

MOUNTING INSTRUCTIONS
Dimensions in mm

11.5

9.0

17.5

3.4
1.7

1.7

3.8
1.3 (x4)

Fig.39. SOT426
soldering pattern for surface mounting.

July 1996

12

Rev 1.000

Philips Semiconductors

Product specification

TOPFET high side switch


SMD version of BUK201-50Y

BUK205-50Y

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1996

13

Rev 1.000