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IRF640A

Advanced Power MOSFET


FEATURES

BVDSS = 200 V

Avalanche Rugged Technology

RDS(on) = 0.18

Rugged Gate Oxide Technology


Lower Input Capacitance

ID = 18 A

Improved Gate Charge


Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V

TO-220

Lower RDS(ON) : 0.144 (Typ.)


1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings


Symbol
VDSS

Characteristic
Drain-to-Source Voltage
o

ID

18
11.4

VGS

Gate-to-Source Voltage

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

TL

Continuous Drain Current (TC=100 oC)


Drain Current-Pulsed

TJ , TSTG

Units

200

Continuous Drain Current (TC=25 C)

IDM

PD

Value

1
O

72

+
_ 30

O
1
O
1
O
O3

216

mJ

18

13.9

mJ

5.0

V/ns

Total Power Dissipation (TC=25 oC )

139

Linear Derating Factor

1.11

W/ C

Operating Junction and

- 55 to +150

Storage Temperature Range

Maximum Lead Temp. for Soldering

300

Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol

Characteristic

Typ.

Max.

RJC

Junction-to-Case

--

0.9

R CS

Case-to-Sink

0.5

--

RJA

Junction-to-Ambient

--

62.5

Units
o

C/W

Rev. B

1999 Fairchild Semiconductor Corporation

N-CHANNEL
POWER MOSFET

IRF640A

Electrical Characteristics (TC=25oC unless otherwise specified)


Symbol

Characteristic

BVDSS

Drain-Source Breakdown Voltage

BV/TJ

Breakdown Voltage Temp. Coeff.

VGS(th)
IGSS
IDSS
RDS(on)

Min. Typ. Max. Units


200

--

---

2.0

--

4.0

Gate-Source Leakage , Forward

--

--

100

Gate-Source Leakage , Reverse

--

--

-100

--

--

10

--

--

100

--

--

0.18

VGS=10V,ID=9A

4
O

--

VDS=40V,ID=9A

4
O

Gate Threshold Voltage

Drain-to-Source Leakage Current


Static Drain-Source
On-State Resistance

--

9.61

Ciss

Input Capacitance

--

1160 1500

Coss

Output Capacitance

--

210

250

Crss

Reverse Transfer Capacitance

--

94

110

td(on)

Turn-On Delay Time

--

17

40

Rise Time

--

16

40

Turn-Off Delay Time

--

48

110

Fall Time

--

24

60

Qg

Total Gate Charge

--

44

58

Qgs

Gate-Source Charge

--

10.4

--

Qgd

Gate-Drain(Miller) Charge

--

27.1

--

tf

See Fig 7

0.26

Forward Transconductance

td(off)

VGS=0V,ID=250A

o
V/ C ID=250 A

--

gfs

tr

Test Condition

V
nA
A

pF

VDS=5V,ID=250A
VGS=30V
VGS=-30V
VDS=200V
o

VDS=160V,TC=125 C

VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=18A,

ns

RG=9.1
See Fig 13

4 O
5
O

VDS=160V,VGS=10V,
nC

ID=18A
See Fig 6 & Fig 12

4 O
5
O

Source-Drain Diode Ratings and Characteristics


Symbol

Characteristic

Min. Typ. Max. Units

Test Condition

IS

Continuous Source Current

--

--

ISM

Pulsed-Source Current

1
O

--

--

72

VSD

Diode Forward Voltage

--

--

1.5

TJ=25oC,IS=18A,VGS=0V

trr

Reverse Recovery Time

--

195

--

ns

TJ=25oC ,IF=18A

Qrr

Reverse Recovery Charge

--

1.35

--

diF/dt=100A/ s

18

Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=1mH, I AS=18A, V DD=50V, R G=27 , Starting T J =25 C
O
O3 ISD <_ 18A, di/dt <_260A/ s, V DD <_BVDSS , Starting T J =25oC
_2%
4 Pulse Test : Pulse Width = 250 s, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O

Integral reverse pn-diode


in the MOSFET

4
O

N-CHANNEL
POWER MOSFET

IRF640A

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

VGS

ID , Drain Current

ID , Drain Current

101

[A]

15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

[A]

Top :

100

@ Notes :
1. 250 s Pulse Test
2. TC = 25 oC

10-1

10-1

100

101

150 oC
100
@ Notes :
1. VGS = 0 V
2. VDS = 40 V

25 oC

101

10

VGS , Gate-Source Voltage [V]


[A]

VDS , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

0.4

IDR , Reverse Drain Current

RDS(on) , []
Drain-Source On-Resistance

3. 250 s Pulse Test

- 55 oC
10-1

VGS = 10 V

0.3

0.2

VGS = 20 V

0.1

@ Note : TJ = 25 oC
20

40

60

100

80

@ Notes :
1. VGS = 0 V

150 oC

2. 250 s Pulse Test

25 oC
10-1
0.2

0.0
0

101

ID , Drain Current [A]

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

C iss

[V]

1500

Ciss= Cgs+ Cgd ( Cds= shorted )


Coss= Cds+ Cgd
Crss= Cgd

VGS , Gate-Source Voltage

Capacitance

[pF]

2000

1000
C oss
500

00
10

@ Notes :
1. VGS = 0 V
2. f = 1 MHz

C rss

101

VDS , Drain-Source Voltage [V]

VDS = 40 V

10

VDS = 100 V
VDS = 160 V

@ Notes : ID = 18.0 A
0

10

20

30

QG , Total Gate Charge [nC]

40

50

N-CHANNEL
POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

1.2

RDS(on) , (Normalized)
Drain-Source On-Resistance

BVDSS , (Normalized)
Drain-Source Breakdown Voltage

IRF640A

1.1

1.0

0.9

@ Notes :
1. VGS = 0 V
2. ID = 250 A

0.8
-75

-50

-25

25

50

75

100

125

150

3.0

2.5

2.0

1.5

1.0
@ Notes :
1. VGS = 10 V

0.5

2. ID = 9.0 A

0.0
-75

175

-50

TJ , Junction Temperature [ oC]

-25

25

50

75

100

125

150

175

TJ , Junction Temperature [ oC]

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature


[A]
ID , Drain Current

102

100 s
1 ms
10 ms

101
DC

100

@ Notes :
1. TC = 25 oC

15

10

2. TJ = 150 oC
3. Single Pulse
10-1
100

101

0
25

102

50

75

100

Tc , Case Temperature [ oC]

VDS , Drain-Source Voltage [V]

Thermal Response

Fig 11. Thermal Response

Z JC(t) ,

ID , Drain Current

[A]

20
Operation in This Area
is Limited by R DS(on)

100
D=0.5

0.2
-1

10

@ Notes :
1. Z J C (t)=0.9

0.1

C/W Max.

2. Duty Factor, D=t1 /t2

0.05

3. TJ M -TC =PD M *Z

JC

(t)

0.02

PDM

0.01
single pulse

t1

10- 2
10- 5

t2
10- 4

10- 3

10- 2

10- 1

t 1 , Square Wave Pulse Duration

100

[sec]

101

125

150

IRF640A
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator
50K
12V

VGS

Same Type
as DUT

Qg

200nF

10V

300nF

VDS

Qgd

Qgs

VGS
DUT
3mA

R1

R2

Current Sampling (IG)


Resistor

Charge

Current Sampling (ID)


Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout

Vout

90%

VDD

Vin

( 0.5 rated VDS )

RG
DUT
Vin

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

LL
VDS
Vary tp to obtain
required peak ID

BVDSS
IAS

ID

RG

C
DUT

ID (t)

VDD

VDS (t)

VDD

10V
tp

tp

Time

N-CHANNEL
POWER MOSFET

IRF640A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
--

IS
L
Driver

VGS
RG
VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by Duty Factor D

Gate Pulse Width


D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

Body Diode
Forward Voltage Drop

VDD

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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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