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BVDSS = 200 V
RDS(on) = 0.18
ID = 18 A
TO-220
Characteristic
Drain-to-Source Voltage
o
ID
18
11.4
VGS
Gate-to-Source Voltage
EAS
IAR
Avalanche Current
EAR
dv/dt
TL
TJ , TSTG
Units
200
IDM
PD
Value
1
O
72
+
_ 30
O
1
O
1
O
O3
216
mJ
18
13.9
mJ
5.0
V/ns
139
1.11
W/ C
- 55 to +150
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RJC
Junction-to-Case
--
0.9
R CS
Case-to-Sink
0.5
--
RJA
Junction-to-Ambient
--
62.5
Units
o
C/W
Rev. B
N-CHANNEL
POWER MOSFET
IRF640A
Characteristic
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
--
---
2.0
--
4.0
--
--
100
--
--
-100
--
--
10
--
--
100
--
--
0.18
VGS=10V,ID=9A
4
O
--
VDS=40V,ID=9A
4
O
--
9.61
Ciss
Input Capacitance
--
1160 1500
Coss
Output Capacitance
--
210
250
Crss
--
94
110
td(on)
--
17
40
Rise Time
--
16
40
--
48
110
Fall Time
--
24
60
Qg
--
44
58
Qgs
Gate-Source Charge
--
10.4
--
Qgd
Gate-Drain(Miller) Charge
--
27.1
--
tf
See Fig 7
0.26
Forward Transconductance
td(off)
VGS=0V,ID=250A
o
V/ C ID=250 A
--
gfs
tr
Test Condition
V
nA
A
pF
VDS=5V,ID=250A
VGS=30V
VGS=-30V
VDS=200V
o
VDS=160V,TC=125 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=18A,
ns
RG=9.1
See Fig 13
4 O
5
O
VDS=160V,VGS=10V,
nC
ID=18A
See Fig 6 & Fig 12
4 O
5
O
Characteristic
Test Condition
IS
--
--
ISM
Pulsed-Source Current
1
O
--
--
72
VSD
--
--
1.5
TJ=25oC,IS=18A,VGS=0V
trr
--
195
--
ns
TJ=25oC ,IF=18A
Qrr
--
1.35
--
diF/dt=100A/ s
18
Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=1mH, I AS=18A, V DD=50V, R G=27 , Starting T J =25 C
O
O3 ISD <_ 18A, di/dt <_260A/ s, V DD <_BVDSS , Starting T J =25oC
_2%
4 Pulse Test : Pulse Width = 250 s, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O
4
O
N-CHANNEL
POWER MOSFET
IRF640A
VGS
ID , Drain Current
ID , Drain Current
101
[A]
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
[A]
Top :
100
@ Notes :
1. 250 s Pulse Test
2. TC = 25 oC
10-1
10-1
100
101
150 oC
100
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
25 oC
101
10
0.4
RDS(on) , []
Drain-Source On-Resistance
- 55 oC
10-1
VGS = 10 V
0.3
0.2
VGS = 20 V
0.1
@ Note : TJ = 25 oC
20
40
60
100
80
@ Notes :
1. VGS = 0 V
150 oC
25 oC
10-1
0.2
0.0
0
101
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
C iss
[V]
1500
Capacitance
[pF]
2000
1000
C oss
500
00
10
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
101
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
@ Notes : ID = 18.0 A
0
10
20
30
40
50
N-CHANNEL
POWER MOSFET
1.2
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
IRF640A
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 A
0.8
-75
-50
-25
25
50
75
100
125
150
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. VGS = 10 V
0.5
2. ID = 9.0 A
0.0
-75
175
-50
-25
25
50
75
100
125
150
175
102
100 s
1 ms
10 ms
101
DC
100
@ Notes :
1. TC = 25 oC
15
10
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
0
25
102
50
75
100
Thermal Response
Z JC(t) ,
ID , Drain Current
[A]
20
Operation in This Area
is Limited by R DS(on)
100
D=0.5
0.2
-1
10
@ Notes :
1. Z J C (t)=0.9
0.1
C/W Max.
0.05
3. TJ M -TC =PD M *Z
JC
(t)
0.02
PDM
0.01
single pulse
t1
10- 2
10- 5
t2
10- 4
10- 3
10- 2
10- 1
100
[sec]
101
125
150
IRF640A
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
50K
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Charge
RL
Vout
Vout
90%
VDD
Vin
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRF640A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
IS controlled by Duty Factor D
10V
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Vf
Body Diode
Forward Voltage Drop
VDD
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