Professional Documents
Culture Documents
STR-A6000 Series
General Descriptions
Package
DIP8
Not to Scale
Lineup
Features
Electrical Characteristics
Products
STR-A605M
650 V
STR-A607M
800 V
STR-A605H
650 V
STR-A606H
700 V
STR-A606HD
700 V
Products
PC1
D1
D2
D/ST D/ST
RA
C5
R52
U51
VCC
C2
STR-A6051M
R56
(-)
RB
S/OCP BR GND FB/OLP
RC
C4
C3
14 W
31 W
21 W
22 W 17.5W
35 W 24.5 W
STR-A6053M
1.9
26 W
21W
40 W
28 W
STR-A6079M
19.2
8W
6W
13 W
9W
17 W
11 W
30 W 19.5 W
3.95
20 W
15 W
35 W 23.5 W
2.8
23 W
18 W
38 W 26.5 W
STR-A6063HD 2.3
25 W
20 W
40 W
STR-A6061HD
28 W
STR-A6000
3.95 18.5 W
2.8
STR-A6052M
STR-A6062HD
U1
POUT
POUT
(Adapter)
(Open frame)
AC85
AC85
AC230V
AC230V
~265V
~265V
fOSC(AVG) = 67 kHz
STR-A6062H
C53
C52 R53
R2
5
NC
R51
R55
C51
RDS(ON)
(max.)
R54
P
100 kHz
STR-A6061H
L51
D51
R1
C1
100 kHz
STR-A6069HD
T1
C6
67 kHz
STR-A6069H
BR1
fOSC(AVG)
VAC
VDSS (min.)
PC1
ROCP
Applications
CY
TC_STR-A6000_1_R1
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
CONTENTS
General Descriptions ----------------------------------------------------------------------- 1
1. Absolute Maximum Ratings --------------------------------------------------------- 3
2. Electrical Characteristics ------------------------------------------------------------ 4
3. Performance Curves ------------------------------------------------------------------ 6
3.1
Derating Curves --------------------------------------------------------------- 6
3.2
Ambient Temperature versus Power Dissipation Curve ------------- 6
3.3
MOSFET Safe Operating Area Curves ---------------------------------- 7
3.4
Transient Thermal Resistance Curves ----------------------------------- 9
4. Functional Block Diagram ---------------------------------------------------------- 11
5. Pin Configuration Definitions ------------------------------------------------------ 11
6. Typical Application Circuit -------------------------------------------------------- 12
7. Package Outline ----------------------------------------------------------------------- 13
8. Marking Diagram -------------------------------------------------------------------- 13
9. Operational Description ------------------------------------------------------------- 14
9.1
Startup Operation ----------------------------------------------------------- 14
9.2
Undervoltage Lockout (UVLO) ------------------------------------------- 15
9.3
Bias Assist Function --------------------------------------------------------- 15
9.4
Constant Output Voltage Control ---------------------------------------- 15
9.5
Leading Edge Blanking Function ---------------------------------------- 16
9.6
Random Switching Function ---------------------------------------------- 16
9.7
Automatic Standby Mode Function-------------------------------------- 16
9.8
Brown-In and Brown-Out Function ------------------------------------- 17
9.9
Overcurrent Protection Function (OCP) ------------------------------- 19
9.10 Overload Protection Function (OLP) ----------------------------------- 20
9.11 Overvoltage Protection (OVP) -------------------------------------------- 20
9.12 Thermal Shutdown Function (TSD) ------------------------------------- 20
10. Design Notes --------------------------------------------------------------------------- 21
10.1 External Components ------------------------------------------------------- 21
10.2 PCB Trace Layout and Component Placement ----------------------- 22
11. Pattern Layout Example ------------------------------------------------------------ 24
12. Reference Design of Power Supply ----------------------------------------------- 25
OPERATING PRECAUTIONS -------------------------------------------------------- 27
IMPORTANT NOTES ------------------------------------------------------------------- 28
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
1.
Symbol
Test Conditions
Pins
Rating
Units
1.2
A6079M
1.8
Drain Peak Current(1)
IDPEAK
Single pulse
81
2.5
3.0
4.0
Avalanche Energy(2)(3)
EAS
ILPEAK=1.2A
A6079M
ILPEAK=1.8A
24
A6059H / 69H
/ 69HD
ILPEAK=2A
46
A6061H / 61HD
ILPEAK=2A
47
81
mJ
A6051M
ILPEAK=2.2A
56
A6062H / 62HD
ILPEAK=2.3A
62
A6052M
ILPEAK=2.5A
72
A6063HD
ILPEAK=2.7A
86
A6053M
13
2 to 6
BR Pin Voltage
VBR
23
0.3 to 7
IBR
23
1.0
mA
VFB
43
0.3 to 14
IFB
43
1.0
mA
VCC
53
32
81
1.35
PD2
53
1.2
TOP
20 to 125
Tstg
40 to 125
Channel Temperature
Tch
150
PD1
A6059H / 69H
/ 69HD
A6051M / 61H
/ 61HD
A6052M / 62H
/ 62HD
A6053M / 63HD
VS/OCP
Notes
(5)
(1)
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
2.
Electrical Characteristics
The polarity value for current specifies a sink as "+," and a source as "," referencing the IC.
Unless otherwise specified, TA = 25 C, VCC = 18 V, 7 pin = 8 pin
Parameter
Symbol
Test
Conditions
Pins
Min.
Typ.
Max.
Units
VCC(ON)
53
13.8
15.3
16.8
VCC(OFF)
53
7.3
8.1
8.9
53
2.5
mA
38
3.7
2.5
1.5
mA
8.5
9.5
10.5
60
67
74
90
100
110
77
83
89
540
ns
470
340
280
20
33
Notes
(1)
ICC(ON)
VST(ON)
83
Startup Current
ISTARTUP
VCC = 13.5 V 5 3
VCC(BIAS)
ICC
= 100 A
VCC = 12 V
53
Normal Operation
Average Switching
Frequency
Switching Frequency
Modulation Deviation
fOSC(AVG)
83
83
A60M
kHz
A60H / HD
A60M
kHz
A60H / HD
Maximum ON Duty
DMAX
83
Minimum ON Time
tON(MIN)
83
tBW
OCP Compensation
Coefficient
DPC
DDPC
36
VOCP(L)
13
0.70
0.78
0.86
13
0.81
0.9
0.99
13
1.32
1.55
1.78
43
340
230
150
A60M
A60H / HD
Protection Function
Leading Edge Blanking Time
A60M
ns
A60H / HD
mV/s
A60H / HD
VOCP(LEB)
IFB(MAX)
IFB(MIN)
43
30
15
VFB(STB)
43
0.85
0.95
1.05
VFB(OLP)
43
7.3
8.1
8.9
ICC(OLP)
53
300
600
tOLP
54
68
82
ms
VFB(CLAMP)
43
11
12.8
14
VOCP(H)
VCC = 32 V
VCC = 12 V
VCC = 12 V
A60M
A60HD
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
Parameter
Symbol
Test
Conditions
Pins
Min.
Typ.
Max.
Units
VBR(IN)
VCC = 32 V
23
5.2
5.6
VBR(OUT)
VCC = 32 V
23
4.45
4.8
5.15
VBR(CLAMP) VCC = 32 V
23
6.4
23
0.3
0.48
0.7
53
26
29
32
53
700
135
650
700
800
300
19.2
3.95
2.8
2.3
A6063HD
1.9
A6053M
250
ns
400
ns
22
C/W
Brown-Out Threshold
Voltage
BR Pin Clamp Voltage
BR Function Disabling
Threshold
VBR(DIS)
VCC(OVP)
ICC(LATCH)
VCC = 32 V
VCC = 9.5 V
Tj(TSD)
Notes
MOSFET
Drain-to-Source Breakdown
Voltage
Drain Leakage Current
On Resistance
Switching Time
Thermal Resistance
Channel to Case Thermal
Resistance(3)
81
VDSS
81
IDSS
RDS(ON)
IDS = 0.4A
81
tf
81
ch-C
A605
A606
A607
A
A6079M
A6059H / 69H
/ 69HD
A6051M / 61H
/ 61HD
A6052M / 62H
/ 62HD
A6053M
(2)
A latch circuit is a circuit operated with Overvoltage Protection function (OVP) and/or Thermal Shutdown function
(TSD) in operation.
(3)
ch-C is thermal resistance between channel and case. Case temperature (T C) is measured at the center of the case top
surface.
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
3.
3.1
Performance Curves
Derating Curves
EAS Temperature Derating Coefficient (%)
100
80
60
40
20
0
0
25
50
75
100
125
150
100
80
60
40
20
0
25
3.2
75
100
125
150
50
1.4
1.35W
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
Ambient Temperature, TA (C )
Figure 3-3 Ambient temperature versus
power dissipation curve
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
3.3
When the IC is used, the safe operating area curve should be multiplied by the temperature derating coefficient
derived from Figure 3-1.
The broken line in the safe operating area curve is the drain current curve limited by on-resistance.
Unless otherwise specified, TA = 25 C, Single pulse
STR-A6051M
STR-A6052M
10
10
0.1ms
0.1ms
1
1ms
0.1
1
1ms
0.1
0.01
0.01
1
10
100
Drain-to-Source Voltage (V)
1000
STR-A6053M
10
100
Drain-to-Source Voltage (V)
1000
STR-A6079M
10
10
0.1ms
0.1ms
1ms
0.1
0.01
1
1ms
0.1
0.01
1
10
100
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
1000
10
100
Drain-to-Source Voltage (V)
1000
STR-A6000 Series
STR-A6059H
STR-A6061H / 61HD
10
10
0.1ms
0.1
0.01
1
1ms
0.1
0.01
1
10
100
1000
10
100
1000
STR-A6062H / 62HD
STR-A6063HD
10
0.1ms
0.1ms
1ms
0.1
1ms
0.01
1
10
100
Drain-to-Source Voltage (V)
1000
Drain-to-Source Voltage (V)
STR-A6069H / 69HD
10
0.1ms
1
1ms
0.1
0.01
1
10
100
1000
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
3.4
10
0.1
0.01
10
STR-A6252
100
1m
10m
100m
10
10
11
0.1
0.1
0.01
0.01
1.0E-06
10
1.0E-05
100
1.0E-04
STR-A6053M
1.0E-03
10m
1.0E-02
100m
1.0E-01
t [sec]
time
10
Transient Thermal Resistance
ch-c (C/W)
1m
Time (s)
0.1
0.01
10
100
1m
10m
100m
Time (s)
10
0.1
0.01
1
10
100
1m
10m
100m
Time (s)
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
STR-A6000 Series
STR-A6079M
Transient Thermal Resistance
ch-c (C/W)
10
0.1
0.01
100n
10
100
1m
10m
100m
STR-A6063HD
Time (s)
Transient thermal resistance curve
STR-A6063HD
ch-c[/W]
Transient thermal resistance
10
10
11
0.1
0.1
0.01
0.01
0.001
0.001
1
1.0E-06
10
1.0E-05
100
1.0E-04
1m
1.0E-03
10m
1.0E-02
100m
1.0E-01
Time (s)
t [sec]
time
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
10
STR-A6000 Series
4.
Startup
UVLO
BR
2
REG
VREG
OVP
D/ST
7,8
TSD
Brown-in
Brown-out
6.4V
DRV
PWM OSC
S Q
R
OCP
7V
VCC
OLP
Feedback
control
FB/OLP
4
12.8V
LEB
S/OCP
1
GND
3
Slope
compensation
BD_STR-A6000_R1
5.
Name
S/GND
D/ST
S/OCP
BR
D/ST
BR
GND
GND
FB /OLP
FB/OLP
VCC
VCC
7
8
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
D/ST
Descriptions
MOSFET source and overcurrent protection
(OCP) signal input
Brown-In and Brown-Out detection voltage input
Ground
Constant voltage control signal input and over
load protection (OLP) signal input
Power supply voltage input for control part and
overvoltage protection (OVP) signal input
(Pin removed)
MOSFET drain and startup current input
11
STR-A6000 Series
6.
VOUT
(+)
R54
R1
C6
RA
L51
D51
T1
VAC
R51
PC1
C1
R55
C51
D1
RB
D2
8
U51
VCC
NC
C53
C52 R53
R2
D/ST D/ST
C5
R52
R56
C2
(-)
U1
STR-A6000
S/OCP BR GND FB/OLP
CRC
damper snubber
RC
C4
C3
PC1
ROCP
CY
TC_STR-A6000_2_R1
Figure 6-1 Typical application circuit (enabled Brown-In/Brown-Out function, DC line detection)
L51
D51
T1
VOUT
(+)
R54
R1
C6
PC1
C1
R55
C51
D1
D2
8
D/ST D/ST
C5
NC
R52
U51
VCC
C2
C53
C52 R53
R2
R51
R56
(-)
U1
STR-A6000
S/OCP BR GND FB/OLP
CRC
damper snubber
C3
ROCP
PC1
CY
TC_STR-A6000_3_R1
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
12
STR-A6000 Series
7.
Package Outline
DIP8
The following show a representative type of DIP8.
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
8.
Marking Diagram
STR-A60M
STR-A60H
8
STR-A60HD
8
A60H
A60
Part Number
SKYMDD
SKYMD
Lot Number
1
Lot Number
D is a period of days:
1 : 1st to 10th
2 : 11th to 20th
st
3 : 21 to 31
st
3 : 21st to 31st
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
Part Number
13
STR-A6000 Series
9.
Operational Description
9.1
Startup Operation
BR1
C1
7, 8
D/ST
U1
VCC
D2
C2
BR
2
GND
R2
D
VD
tSTART
Drain current,
ID
(1)
T1
VAC
VCC pin
voltage
tSTART
VCC(ON)
VCC(OFF)
BR pin
voltage
VBR(IN)
(2)
I STRATUP
where,
tSTART : Startup time of IC (s)
VCC(INT) : Initial voltage on VCC pin (V)
Drain current,
ID
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
14
STR-A6000 Series
9.2
Stop
Start
9.4
VCCON VCC pin
voltage
VCCOFF
9.3
U1
S/OCP
1
VCC pin
voltage
GND FB/OLP
3
Startup success
IC starts operation
VCC(ON)
VCC(BIAS)
VCC(OFF)
Target operating
voltage
Increase with rising of
output voltage
PC1
VROCP
ROCP
IFB
Startup failure
Time
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
C3
VSC
VROCP
FB Comparator
Voltage on both
sides of ROCP
Drain current,
ID
15
STR-A6000 Series
Light load conditions
When load conditions become lighter, the output
voltage, VOUT, increases. Thus, the feedback current
from the error amplifier on the secondary-side also
increases. The feedback current is sunk at the FB/OLP
pin, transferred through a photo-coupler, PC1, and the
FB/OLP pin voltage decreases. Thus, VSC decreases,
and the peak value of VROCP is controlled to be low,
and the peak drain current of I D decreases.
This control prevents the output voltage from
increasing.
Heavy load conditions
When load conditions become greater, the IC
performs the inverse operation to that described above.
Thus, VSC increases and the peak drain current of ID
increases.
This control prevents the output voltage from
decreasing.
In the current mode control method, when the drain
current waveform becomes trapezoidal in continuous
operating mode, even if the peak current level set by the
target voltage is constant, the on-time fluctuates based
on the initial value of the drain current.
This results in the on-time fluctuating in multiples of
the fundamental operating frequency as shown in Figure
9-8. This is called the subharmonics phenomenon.
In order to avoid this, the IC incorporates the Slope
Compensation function. Because the target voltage is
added a down-slope compensation signal, which reduces
the peak drain current as the on-duty gets wider relative
to the FB/OLP pin signal to compensate V SC, the
subharmonics phenomenon is suppressed.
Even if subharmonic oscillations occur when the IC
has some excess supply being out of feedback control,
such as during startup and load shorted, this does not
affect performance of normal operation.
9.5
9.6
9.7
Burst oscillation
Target voltage
without Slope Compensation
Below several kHz
Drain current,
ID
tON1
T
Normal
operation
tON2
T
Normal
operation
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
Standby
operation
16
STR-A6000 Series
during the transition to the burst oscillation mode, the
Bias Assist function is activated and stabilizes the
Standby mode operation, because ISTARTUP is provided to
the VCC pin so that the VCC pin voltage does not
decrease to VCC(OFF).
However, if the Bias Assist function is always
activated during steady-state operation including
standby mode, the power loss increases. Therefore, the
VCC pin voltage should be more than VCC(BIAS), for
example, by adjusting the turns ratio of the auxiliary
winding and secondary winding and/or reducing the
value of R2 in Figure 10-2 (refer to Section 10.1
Peripheral Components for a detail of R2).
9.8
BR1
VAC
RA
VDC
U1
C1
RB
RC
BR
C4
GND
3
tOLP
17
STR-A6000 Series
R RB
where,
VDC(OP)
(3)
VBR(TH)
VBR(IN)
Value
(Typ.)
5.6 V
VBR(OUT)
4.8 V
Symbol
VAC ( OP ) RMS
1
2
VDC ( OP )
(4)
VAC
BR1
RA
3
VCC
RS
VDC
RB
C1
2
RC
BR
C4
VAC ( OP ) RMS
R RB
VBR ( TH) 1 A
R C
2
(5)
where,
VAC(OP)RMS :The effective value of AC input voltage
when Brown-In and Brown-Out function
is activated
VBR(TH)
:Any one of threshold voltage of BR pin
(see Table 9-1)
RA, RB, RC and C4 should be selected based on
actual operation in the application.
U1
GND
3
18
STR-A6000 Series
Overcurrent Protection Function
(OCP)
9.9
VOCP(H)
VOCP(L)
0.5
DDPC
DMAX
50
100
ON Duty (%)
Figure 9-15 Relationship between ON Duty and Drain
Current Limit after compensation
CRC
Damper snubber
T1
C1
C51
VOCP ( L ) DPC
7,8
D/ST
U1
S/OCP
1
ONDuty
f OSC ( AVG )
(6)
where,
VOCP(L): OCP Threshold Voltage at Zero ON Duty
DPC: OCP Compensation Coefficient
ONTime: On-time of power MOSFET
ONDuty: On duty of power MOSFET
fOSC(AVG): Average PWM Switching Frequency
CRC
Damper snubber
ROCP
19
STR-A6000 Series
9.10 Overload Protection Function (OLP)
U1
GND
FB/OLP
4
5
D2 R2
C3
VOUT ( NORMAL )
VCC( NORMAL )
29 (V)
(7)
where,
VOUT(NORMAL): Output voltage in normal operation
VCC(NORMAL): VCC pin voltage in normal operation
VCC
PC1
VOUT(OVP)
C2
D
Non-switching interval
VCC pin voltage
VCC(ON)
VCC(OFF)
tOLP
tOLP
VFB(OLP)
Drain current,
ID
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
20
STR-A6000 Series
10. Design Notes
10.1 External Components
Take care to use properly rated, including derating as
necessary and proper type of components.
CRD clamp snubber
BR1
T1
VAC
R1
C6
RA
C1
P
D1
RB
D2
8
D/ST D/ST
C5
R2
7
NC
VCC
C2
U1
RC
C4
C3
PC1
ROCP
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
Without R2
With R2
Output current, IOUT
Figure 10-2 Variation of VCC pin voltage and power
Snubber Circuit
In case the surge voltage of VDS is large, the circuit
should be added as follows (see Figure 10-1);
A clamp snubber circuit of a capacitor-resistordiode (CRD) combination should be added on the
primary winding P.
A damper snubber circuit of a capacitor (C) or a
resistor-capacitor (RC) combination should be
added between the D/ST pin and the S/OCP pin.
In case the damper snubber circuit is added, this
components should be connected near D/ST pin
and S/OCP pin.
21
STR-A6000 Series
VOUT
(+)
D51
PC1
R55
C51
S
R54
R51
R52
C53
C52 R53
U51
R56
(-)
Margin tape
Bobbin
L51
T1
P1 S1 P2 S2 D
Margin tape
Margin tape
Bobbin
P1 S1
D S2 S1 P2
Margin tape
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
22
STR-A6000 Series
Figure 10-5 shows the circuit design example.
(4) ROCP Trace Layout
ROCP should be placed as close as possible to the
S/OCP pin. The connection between the power
ground of the main trace and the IC ground should
be at a single point ground (point A in Figure 10-5)
which is close to the base of ROCP.
D51
T1
R1
C6
RA
C1
DST
C51
D1
RB
D2
8
D/ST D/ST
C5
R2
7
NC
C2
VCC
U1
STR-A6000
(3) Loop of the power
supply should be small
ROCP
C3
C4 RC
PC1
CY
A
(4)ROCP should be as close to S/OCP pin as
possible.
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
23
STR-A6000 Series
11. Pattern Layout Example
The following show the PCB pattern layout example and the schematic of circuit using STR-A6000 series.
The above circuit symbols correspond to these of Figure 11-1.Only the parts in the schematic are used. Other parts
in PCB are leaved open.
T1
L52
D52
CN51
1
OUT2(+)
OUT2(-)
OUT1(+)
OUT1(-)
R59
C57
R58
C55
R61
C56
R60
CN1
1
F1
L1
JW51
JW52
JW54
JW6
C1
C12
C2
C13
D1
D2 TH1
D4
D3
L51
L2
C3
D51
C4
P1
C5
R51
C54
R1
R55
R52
PC1
R2
S1
R54
C51
C53
D7
C52
U51
JW2
R57
R53
R56
R7
D2
JW10
R6
U1
D/ST
D/ST
5
NC
JW4
D8
R3
JW31
D1
C9
C8
STR-A6000
C31
C32
BR
GND FB/OLP
C11
3
JW3
JW8
JW7
C6
C7
OUT4(-)
JW21
U21
D21
1 IN
R4
OUT4(+)
JW53
JW11
R5
1
R31
C10
S/OCP
CN31
D31
VCC
CP1
JW9
C21
CN21
OUT
GND
2
C22
OUT3(+)
OUT3(-)
R21
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
24
STR-A6000 Series
12. Reference Design of Power Supply
As an example, the following show the power supply specification, the circuit schematic, the bill of materials, and
the transformer specification.
Power supply specification
IC
Input voltage
Maximum output power
Output voltage
Output cirrent
STR-A6059H
AC85V to AC265V
7.5W
5V
1.5A (max.)
Circuit schematic
1
F1
L1
D1
D2
D4
D3
L2
TH1
L51
T1
D51
C1
3
C4
R1
C3
R51
C55
R4
VOUT(+)
5V/1.5A
VOUT(-)
S1
C2
R55
R52
PC1
D5
3
R54
R57
C51
P1
C53
R53
C52
S2
U51
8
D/ST
R8
D/ST
VCC
BR
R2
R56
C5
D
STR-A6000
S/OCP
GND FB/OLP
C7
R7
NC
D6
U1
C8
R9
C6
PC1
R3
C9
TC_STR-A6000_4_R1
Bill of materials
Symbol
F1
L1
L2
TH1
D1
D2
Part type
Ratings(1)
Recommended
Sanken Parts
Symbol
(3)
Part type
Fuse
CM inductor
Inductor
NTC thermistor
General
General
AC250V, 3A
3.3mH
470H
Short
600V, 1A
600V, 1A
EM01A
EM01A
R4
R7
R8
R9
PC1
U1
D3
General
600V, 1A
EM01A
T1
Transformer
D4
D5
D6
C1
C2
C3
C4
C5
C6
C7
C8
C9
R1
General
Fast recovery
Fast recovery
Film, X2
Electrolytic
Electrolytic
Ceramic
Electrolytic
Ceramic
Ceramic
Ceramic
Ceramic, Y1
General
600V, 1A
1000V, 0.5A
200V, 1A
0.047F, 275V
10F, 400V
10F, 400V
1000pF, 630V
22F, 50V
0.01F
1000pF
Open
2200pF, 250V
Open
EM01A
EG01C
AL01Z
L51
D51
C51
C52
C53
C55
R51
R52
R53
R54
R55
R56
R57
Inductor
Schottky
Electrolytic
Ceramic
Electrolytic
Ceramic
General
General
General
General, 1%
General, 1%
General, 1%
General
General
4.7
R2
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
U51
(3)
(3)
(2)
(2)
(2)
Metal oxide
General
General
General
Photo-coupler
IC
Shunt regulator
Ratings(1)
Recommended
Sanken Parts
330k, 1W
330k
2.2M
2.2M
PC123 or equiv
See
the specification
5H
90V, 4A
680F, 10V
0.1F, 50V
330F, 10V
1000pF, 1kV
220
1.5k
22k
Short
10k
10k
Open
VREF=2.5V
TL431 or equiv
STR-A6059H
FMB-G19L
R3
General
1.5, 1/2W
Unless otherwise specified, the voltage rating of capacitor is 50 V or less and the power rating of resistor is 1/8 W or less.
(2)
It is necessary to be adjusted based on actual operation in the application.
(3)
Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against electromigration or use
combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application.
(1)
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
25
STR-A6000 Series
Transformer specification
Primary inductance, LP
Core size
Al-value
Winding specification
Winding
704 H
EI-16
132 nH/N2 (Center gap of about 0.26 mm)
Symbol
Primary winding
P1
73
2UEW-0.18
Auxiliary winding
17
2UEW-0.182
Output winding 1
S1
TEX-0.32
Output winding 2
S2
TEX-0.32
VDC
VOUT(+)
5V
P1
D
S2
S1
S1
P1
D/ST
VCC
Bobbin
GND
VOUT(-)
S2
Cross-section view
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
Construction
Two-layer,
solenoid winding
Single-layer,
solenoid winding
Single-layer,
solenoid winding
Single-layer,
solenoid winding
26
STR-A6000 Series
OPERATING PRECAUTIONS
In the case that you use Sanken products or design your products by using Sanken products, the reliability largely
depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation
range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to
assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric
current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused
due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum
values must be taken into consideration. In addition, it should be noted that since power devices or ICs including power
devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly.
Because reliability can be affected adversely by improper storage environments and handling methods, please
observe the following cautions.
Cautions for Storage
Ensure that storage conditions comply with the standard temperature (5 to 35C) and the standard relative humidity
(around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity.
Avoid locations where dust or harmful gases are present and avoid direct sunlight.
Reinspect for rust on leads and solderability of the products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from power
surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are
within the ratings specified by Sanken for the products.
Remarks About Using Thermal Silicone Grease
When thermal silicone grease is used, it shall be applied evenly and thinly. If more silicone grease than required is
applied, it may produce excess stress.
The thermal silicone grease that has been stored for a long period of time may cause cracks of the greases, and it
cause low radiation performance. In addition, the old grease may cause cracks in the resin mold when screwing the
products to a heatsink.
Fully consider preventing foreign materials from entering into the thermal silicone grease. When foreign material
is immixed, radiation performance may be degraded or an insulation failure may occur due to a damaged insulating
plate.
The thermal silicone greases that are recommended for the resin molded semiconductor should be used.
Our recommended thermal silicone grease is the following, and equivalent of these.
Type
Suppliers
G746
Shin-Etsu Chemical Co., Ltd.
YG6260 Momentive Performance Materials Japan LLC
SC102
Dow Corning Toray Co., Ltd.
Soldering
When soldering the products, please be sure to minimize the working time, within the following limits:
260 5 C
10 1 s (Flow, 2 times)
380 10 C 3.5 0.5 s (Soldering iron, 1 time)
Soldering should be at a distance of at least 1.5 mm from the body of the products.
Electrostatic Discharge
When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1M
of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator.
Workbenches where the products are handled should be grounded and be provided with conductive table and floor
mats.
When using measuring equipment such as a curve tracer, the equipment should be grounded.
When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent
leak voltages generated by them from being applied to the products.
The products should always be stored and transported in Sanken shipping containers or conductive containers, or
be wrapped in aluminum foil.
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
27
STR-A6000 Series
IMPORTANT NOTES
The contents in this document are subject to changes, for improvement and other purposes, without notice. Make
sure that this is the latest revision of the document before use.
Application examples, operation examples and recommended examples described in this document are quoted for
the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any
infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of
Sanken or any third party which may result from its use.
Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or
implied, as to the products, including product merchantability, and fitness for a particular purpose and special
environment, and the information, including its accuracy, usefulness, and reliability, included in this document.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and
defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at
their own risk, preventative measures including safety design of the equipment or systems against any possible
injury, death, fires or damages to the society due to device failure or malfunction.
Sanken products listed in this document are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various
safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment
or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products
herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high
reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly
prohibited.
When using the products specified herein by either (i) combining other products or materials therewith or (ii)
physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that
may result from all such uses in advance and proceed therewith at your own responsibility.
Anti radioactive ray design is not considered for the products listed herein.
Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of
Sankens distribution network.
The contents in this document must not be transcribed or copied without Sankens written consent.
STR-A6000 - DS Rev.4.3
Mar. 13, 2015
28