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OIP3/PDC ratios of 211 (10 dB NF) and 144 (6.0 dB NF) at 2 GHz
Zach Griffith , Miguel Urteaga , and Mark J.W. Rodwell
Teledyne
of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-9560, USA
I. I NTRODUCTION
Amplifiers with very low intermodulation distortion are
required in radar receivers and in multi-carrier communications
systems such as cell phone base stations. In simple reactively-tuned
RF amplifiers the output-referred third-order intermodulation distortion intercept (OIP3) is proportional to the DC current dissipation.
In this situation very low IM3 can be obtained only at the cost of
high DC power consumption.
Here we report mm-wave (2 GHz) amplifiers having high (greater
than 51 dBm) third-order intermodulation intercepts despite consuming a relatively low 1000 mW power dissipation PDC . This
very high ratio of output-referred third-order-intercept power to DC
power consumption POIP 3 /PDC > 200 is obtained through the
use of strong global negative feedback using circuit techniques
similar to classic operational amplifiers [1]. We explicitly distinguish
this work from that of other mm-, microwave feedback amplifiers
using a feedback resistor Rf = Zo (1 Av ) [2] to provide a
matched Zo input impedance; such amplifiers have less than unity
feedback magnitude. In marked contrast, low amplifier distortion is
here obtained using strong global negative feedback; a mm-wave
operational amplifier.
Obtaining high OIP3 requires novel designs and detailed attention
to residual sources of distortion. Because 20-40 GHz loop band-
II. T HEORY
An amplifier (fig. 1a) having open-loop distortion Ve produces a
closed-loop output of Vout = ACL Vin + (ACL /AOL )Ve , where
ACL
= 1/H is the closed-loop gain. Distortion is reduced by
the ratio (ACL /AOL ) of closed-loop to open-loop gain. In a twostage design (fig. 1b) each stage first produces open-loop intermodulation distortion (Ve1 , Ve2 ) determined by the magnitude of
the stage output signals (Vout1 , Vout2 ) and third-order intercepts
3
2
(VOIP 3,1 , VOIP 3,2 ) through the relationships Ve2 = Vout2
/VOIP
3,2
3
2
3
2
and Ve1 = Vout1 /VOIP 3,1 = (Vout /AV,2 ) /VOIP 3,1 . The closedloop output is then Vout = ACL Vin + (ACL /A1 )Ve1 +
Vin
Vin
Aol
Vout
V+
Zgen
R
R1 f
C1
C2
Vout1
V - C3
A2
I3
I1
R1
a)
A1
Rf
b)
Rf
Vout
I2
Rf
Zgen
Zgen
Vin
A1
Vout
c)
Vin
C
V- 2 A1
C1
I1
V+
Vout1
C3
Vout
A2
I3
d)
Vout =
(1)
where funity123
= (gm2 Rf i /Cint1 Rf ) is the unity-gain
frequency of the feedback loop transmission, where T
funity123 /jf . In a 350 GHz f , fmax HBT technology,
funity123 25-40 GHz are feasible. At fs 2 GHz, considerable reduction in the output stage distortion is therefore feasible.
III. D ESIGN
A simple resistive feedback network is used for these circuits.
To ensure the network remains dominantly real across the 3dB
bandwidth of the op-amp, the length of the feedback path (Zo =
50 ) is only 65 m in order to avoid series inductance or shunt
capacitance loading on the interconnect. Such a short length is
possible with the symmetric, folded floorplan used for circuit layout,
stage 1
stage 2
stage 3,EF
stage 3,diff
(mA)
10
30
14
56
PDC (mW)
90
270
126
504
x,y
V. O P -A MP C IRCUIT R ESULTS
Figure 6 shows the microwave gains of the op-amps designed
for highest OIP3 at this 500nm InP DHBT technology node. The
nominal S21 gain is 13.8dB and PDC = 1005 mW. As the loop
bandwidth is varied through compensation Cint = 250, 225, 200fF,
the respective amplifier 3dB bandwidths are 26.0 GHz (6.1 dB
peaking), 35.0 GHz (5.0 dB peaking), and 35.0 GHz (7.5 dB
peaking). From the Rollett stability factor K, these amplifiers are
(a) S-parameters for op-amps with less strong feedback and minimal input padding resistance.
ACKNOWLEDGMENT
This work was supported by the DARPA FLARE program. Special thanks to Program Managers Dr. Sanjay Raman and Dr. Steve
Pappert, and Dr. Richard Eden for their contributions and support.
R EFERENCES
[1] J.E. Solomon et al., IEEE Journal of Solid-State Circuits, Vol. SC-9,
No. 6. Also at http://www.national.com/an/AN/AN-A.pdf
[2] M.J.W. Rodwell et al., Journal of Solid-State Circuits, Vol. 26, No. 10,
pp. 1378-1382, October 1991.
[3] M. Urteaga et al., Proc. Device Research Conf., Notre Dame, IN, pp.
239-240, June 21-23, 2004.
[4] Z. Griffith et al., Proc. Indium Phosphide and Related Materials Conf.,
Versailles, France, May 25-29, 2008.
[5] E. Cherry, IEEE Transactions on Acoustics, Speech, and Signal Process,
Vol. 29, Iss. 2, Apr. 1981, pp. 137-146.
[6] A. van der Ziel, Noise: Sources, Characterization, Measurement. Englewood Cliffs, NJ, Prentice-Hall, 1970.