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Accepted Manuscript

Title: MEMS Microphones with Narrow Sensitivity


Distribution
Author: S. Walser C. Siegel M. Winter G. Feiertag M. Loibl
A. Leidl
PII:
DOI:
Reference:

S0924-4247(16)30196-0
http://dx.doi.org/doi:10.1016/j.sna.2016.04.051
SNA 9635

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Sensors and Actuators A

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Revised date:
Accepted date:

30-11-2015
8-4-2016
22-4-2016

Please cite this article as: S.Walser, C.Siegel, M.Winter, G.Feiertag, M.Loibl, A.Leidl,
MEMS Microphones with Narrow Sensitivity Distribution, Sensors and Actuators: A
Physical http://dx.doi.org/10.1016/j.sna.2016.04.051
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MEMS Microphones with Narrow Sensitivity Distribution

S. Walsera* , C. Siegelb, M. Winterb, G. Feiertaga, M. Loibla, A. Leidlb

a
Munich
b

University of Applied Sciences, Munich, Germany


EPCOS AG a TDK group company, Munich, Germany

* Corresponding author: Sebastian Walser, Email: sebastian.walser@hm.edu, Tel: +49 089 54020 3160

Abstract

This paper presents a method for calibrating MEMS microphones after the fabrication process. This allows compensating process
tolerances and packaging stress of the capacitive membrane-backplate system. A programmable MEMS microphone with
variable bias voltage and variable gain was developed and fabricated. The sensitivity of this microphone can be adjusted within a
range of 11 dB. The adjustability was used to trim the sensitivity towards a specified value and to reduce the variation of the
sensitivity. In mass production a tight sensitivity of 1 dB could be reached, for a specified sensitivity of -38 dBV/Pa @ 1 kHz.
In addition the microphone signal to noise ratio was increased to values above 66 dB(A) by choosing high bias voltages and
matching gain calibration. The relationship between bias supply voltage and the non-linear dynamics of a double backplate
sensor is explained. The influence of programming on the sensitivity, noise, SNR, THD and frequency response was investigated.

Keywords: MEMS, microphone, OTP, programming, high SNR, sensitivity, distribution

1. Introduction
Today microelectromechanical systems (MEMS) are commonly used as sensors in electronic consumer products,
because of the accurately controlled silicon micromachining technology. MEMS microphones, which convert an
acoustic signal into an electrical signal, reach a high degree of miniaturization [1]. In the last decades electret
condenser microphones (ECM) have been replaced more and more by silicon MEMS microphones, because of their
durable and reliable performance characteristics at high temperatures or high humidity [2]. For consumer audio
applications, e.g. mobile phone communication, silicon MEMS microphones have become state of the art [3]. High
signal to noise ratios (SNR) of approximately 66 dB(A), sensitivities of -38 dBV/Pa and component sizes of
approximately 3.5 x 2.5 x 1.0 mm3 are state of the art [4, 5].
In addition to the continuous reduction in size, a new demand of the market is a narrow distribution of the
sensitivities down to 1 dB or beyond for analogue MEMS microphones [6]. The reasons for this demand are new
audio signal processing applications like noise canceling. For noise canceling it is necessary to have microphones
with similar electroacoustic characteristics assembled within one mobile phone [7].
Sensitivity variations are caused by tolerances in the front-end processing of the sensor chip [8] and the
application-specific integrated circuit (ASIC). Another source of variations is packaging stress on the sensor chip [9,
10]. All these influences lead to wide sensitivity variation of MEMS microphones. An example of a measured
sensitivity distribution of MEMS microphones is given in [6]. A sensitivity span of 4 dB was measured. In case of a
specified sensitivity tolerance of 1 dB, this would result in low production yield.
The simplest way to reach the specified sensitivity tolerances is to select the microphone modules after their
fabrication. This can be done by production test results. A significant drawback of this method would be a low yield.
Another possibility to reduce the sensitivity variations is to pair suitable ASIC and sensor chips. This pairing could
reduce the sensitivity variations by compensating both chip tolerances. A drawback of pairing is that variations
resulting from assembly cannot be compensated. An in situ way to reduce the variations by tuning is described in
[11]. There the acoustic sensitivity tuning was done by using silver metallic electrodeposited nanostructures on the
membrane. This technique offers a step toward reducing sensitivity tolerances after fabrication with the drawback of
a low tuning range of 0.6 dB and the need of an additional external power source for growing mechanism.

Sensors and Actuators A

Another way to compensate the tolerances by trimming after completing the fabrication of the microphone
modules is described in [6] and discussed more detailed in this paper. This method also allows compensating the
variations caused by packaging stress. The principle and the benefits of programming are shown. For experimental
characterization a new programmable, capacitive MEMS microphone has been developed. In addition to tight
sensitivity specifications, high signal to noise ratios are also required. By using an appropriate programming
algorithm, it is possible to produce microphones with tight sensitivity deviations and high SNR.
2. Programmable MEMS microphones
Condenser silicon MEMS microphones consist in most cases of two chips, a sensor and an ASIC chip, which are
both integrated in a surface-mount device (SMD) package. During the last few years, two main packaging variants
have been applied for bottom port MEMS microphones [12]. An example for a wire-bonding-type package is given
in [13]. An example for a flip-chip package is given in [14].
The sensor chip converts the incoming acoustic wave into a capacitive change. The ASIC chip transforms the
capacitive into an electrical voltage. During the last few years a trend towards sensor chips with two backplates and
a membrane in between, has become apparent [14, 15, and 16]. The main benefit in comparison to a singlebackplate transducer is the differential output signal. This leads to a 6 dB higher sensitivity. The noise of two
identical transducers is normally distributed and uncorrelated [2]. This results in a 3 dB(A) higher noise level of the
double-backplate system in comparison to a single-backplate system [2]. As a result, this leads to a 3 dB(A) higher
SNR in comparison to a single-backplate transducer [2]. For high performance recording the SNR is the most
relevant parameter of a microphone. A detailed theoretical description of differential microphones with two
perforated backplates and a membrane in between was published by Martin et al. [17 and 18].
2.1. Programmable interface
The development of programmable microphones started around 2007 [19]. Figure 1 shows the schematic of the
novel condenser MEMS microphone with a programmable interface for adjusting the acoustic microphone
characteristics.
For calibrating, a new non-volatile one-time-programmable (OTP) memory is integrated in the ASIC. The
principle of the OTP memory is based on a very high cell resistance, which decreases significantly after
programming and allows a single write [20]. The advantage of this technology is that an OTP logic can be integrated
in a CMOS process technology without additional process steps or masking layers [20].
A constant preload of the capacitive membrane-backplate system is provided by a programmable bias voltage
generator module, for example by a charge pump. In case of a sound pressure, the oscillating membrane causes a
differential capacitive change between the membrane and the rigid perforated backplates. Transformed into an
electrical signal it is transmitted via a programmable amplifier stage to the differential microphone outputs. The
output stage adapts the impedance and gain of the microphone output signal.
For the programming sequence an external clock and a communication path are necessary. Disadvantages of
programmable microphones are larger ASIC chip sizes and longer test times. The size of a programmable ASIC is
larger, because of the additional area of the OTP module and the digital interface.
With the OTP memory, it is possible to program the bias supply of the membrane-backplate system and the gain
of the amplifier. Four bits of the memory cell are reserved for adjusting the amplifiers. The amplifier is designed
with a programmable range of 7.5 dB. The amplifier is linear, so the sensitivity can be adjusted without changing the
other acoustical microphone parameters. Five bits of the memory cell are reserved for adjusting the bias supply
voltage. The choice of the bias working area depends on the sensor design. For a better understanding figure 2
shows the membrane displacement over the bias voltage supply and the forces acting on the membrane for an
incoming sound pressure.
The membrane deflection x and the resulting forces are caused by incoming sound pressure. The mechanical
force Fmech is described by a simplified linear spring model. In case of a double backplate system a capacitive
preload voltage Vbias causes two electrostatic forces Fel1 and Fel2.
At the pull-in point, the deflection of the membrane has reached a value where the electrostatic attraction of one
backplate is larger than the forces, which act in the other direction. For a system with only one backplate this point

is roughly reached at x = 2/3 x0. [21, 22] For a double backplate system, this point is somewhat higher due to the
second electrostatic force (Fel2). In literature [16] this benefit is given with a 30% higher bias field than for a singleended sensor. The non-linearity of the system is small as long as the membrane deflection is far from the pull-in
point. By increasing the bias voltage the pull-in point moves to lower sound pressure levels. In fact a pull-in can be
reached even with a double backplate system by increasing bias voltage alone in case of an unstable balance point.
Increasing bias supply voltage results in an increase in sensitivity. With bias voltages close to the pull-in point the
system becomes non-linear. The drawback of this is an increase in the total harmonic distortions (THD). Some
detailed investigations about the non-linear dynamics of double backplate capacitive MEMS microphones can also
be found in [23]. So the adjustable bias supply voltage should be chosen within the easier to control linear area.
Therefore, the bias supply was designed with a programmable range of 2.4 V and an upper corner of 12.3 V.
2.2. Fabrication of the programmable MEMS microphone
For this research, a differential sensor chip is used. The sensor chip has a size of 1.45 x 1.45 x 0.45 mm3. A
picture of this sensor chip is shown in figure 3.

The differential sensor chip consists of two perforated backplates with a membrane in between. The diameter of
the membrane and backplates is 1.2 mm. The membrane is coated with an anti-stiction layer and has a thickness of
around 0.4 m. The backplates have a thickness of 3 m. The gap distance between backplate and membrane is
around 2 m. The venthole is necessary for the pressure exchange between frontvolume and backvolume.
The package of the new programmable MEMS microphone is based on a flip-chip bottom port MEMS
microphone package technology, which was presented in [5]. The microphone with a package size of
3.35 x 2.5 x 1.0 mm3 consists of two chips, the sensor and the ASIC chip. The programmable ASIC chip has a size
of 1.45 x 1.00 x 0.20 mm3. Figure 3a shows a sectional view of the fabricated programmable microphone. The
sensor chip is flip-chip bonded on a ceramic substrate above its sound hole as shown in figure 4b. The separation of
frontvolume and backvolume is done by a polymer foil as shown in figure 4c. The package is closed by a metal lid
as shown in figure 4d. The package combines advantages of a small front-volume to avoid resonances in the
acoustic frequency range and a large back-volume to increase the SNR. The detailed MEMS microphone fabrication
process and the advantages of the package are explained in more detail in [5] and [24].
3. Measurement results
All measurements were carried out in an acoustic pressure chamber, calibrated to 1 Pa by a reference
microphone. For some measurements, a trial mode in the ASIC design was used. This mode allows multiple
programming, by using a volatile memory for debugging applications.
3.1. Characterization of the programmable microphone
To achieve the goal of a small sensitivity variation after MEMS microphone fabrication, the programmable
interface is used. As explained in section 2.1, the microphone sensitivity can be adjusted by setting the gain factor of
the amplifier and the bias supply voltage of the capacitive sensor.
The amplifier with variable gain is part of the output stage of the ASIC. As long as the output stage does not
contribute to non-linearity the signal and its harmonics are amplified linearly. This results in a simple linear shift of
the sensitivity with a slope factor of 1.0 dBV/dB as shown in figure 5a. The noise floor has a slope factor of
0.9 dBV/dB as shown in figure 5b. As a result, an increase in the SNR with increasing gain was measured as shown
in figure 5c. The measured amplification of the noise is smaller than the amplification of the signal because of the
self-noise of the amplifier output stage and the self-noise of the analog measurement input stage. As a consequence,
the gain has no relevant influence the SNR.
The THD influence is shown in figure 5d for a measured sound pressure level (SPL) of 110 dBSPL. Depending
on the amplifier design the THD increases significantly for gain factors above 5 dB. The reason for this is clipping
of the output signal of the microphone. Figure 5e shows the influence of the gain factor on the frequency response.

Sensors and Actuators A

Increasing the gain factor results in a linear shift to higher sensitivities, without changing the frequency response. A
detailed view of the frequency response of flip-chip MEMS microphone packages is given in [5] and [24].
However, adjusting the bias voltage changes the operating point of the MEMS sensor and thus has an influence
on the overall performance including SNR and THD. Programming bias results in a linear shift of the sensitivity as
shown in figure 5f, as well as of the noise floor as shown in figure 5g. For this sensor design, the sensitivity reacts to
a change of the bias voltage with a slope of 1.5 dBV/V. The microphone noise floor is caused by different sources,
in general the noise of the sensor, the noise of the ASIC and noise caused by the package. The noise reacts to a
change of the bias voltage with a slope of 1.0 dBV/V.
The different sensitivity and noise slopes result in a large influence of the bias voltage on the SNR as shown in
figure 5h. With a slope of 0.5 dBV/V the SNR can be modified by the bias voltage. The drawback of high bias
voltages is the THD increase shown in figure 5i. Higher bias voltages shift the sensor operating point closer to the
pull-in point. The non-linear sensor behavior in this region leads to higher THD. Figure 5j shows the influence of
the bias factor on the frequency response. Increasing the bias voltage results in a linear shift to higher sensitivities,
without changing the frequency response.

3.2. Narrow sensitivity distribution


Figure 6 shows the sensitivity distribution of one production lot directly after fabrication. The sensitivities were
measured in the production end test. The mean value of the sensitivities is -38 dBV/Pa; the span has a value of
3.4 dB. The standard deviation is 0.57 dB. With a specified sensitivity tolerance of 1 dB the yield would be below
90% for a well-centered process.
To achieve the goal of reducing the sensitivity variation after MEMS microphone fabrication, the programmable
interface is applied. By using 5 bits for bias and 4 bits for gain adjustment, a sensitivity calibration matrix follows
for all possible programming combinations. Figure 7 shows the measured sensitivity for all possible gain and bias
combinations measured for one programmable microphone. With the designed step sizes, the calibration matrix has
a wide sensitivity range of 10.8 dBV. The gain adjustment for rough sensitivity approximation is shown in the
sixteen steps between the different diagonal bias lines. The bias adjustment for precise sensitivity setting is shown in
the diagonal lines with a step count of 32.
The programming is done after completion of the fabrication process within a production test. First, a
measurement characterizes the sensitivity after fabrication and determines the calibration settings with regard to the
required sensitivity specifications, e.g. -38 dBV/Pa. In the next step, the microphone is calibrated by gain and bias
factors. After the programming sequence a complete electroacoustic production test is done. Figure 8 shows the
sensitivity distribution, of the same production lot as in figure 6, before and after programming.
The standard deviation of 0.57 dB before programming was reduced to a standard deviation of 0.06 dB by
programming. With this value, all sensitivities are well within 1 dB specification limits. The reason for the
remaining variation after programming is that the sensitivity change caused by a bias shift is not well determined.
The change depends on MEMS sensor parameters, like thickness, stress, membrane diameter and the distance
between membrane and backplate.
An even narrower sensitivity deviation could be reached by a precisely characterized bias slope factor. One
solution for this problem could be the characterization of the bias slope factor for each individual microphone device
and adapting these parameters to the calibration algorithm. The drawback of this characterization is a longer test
time. Around 100 ms are necessary for a single programming cycle in the production test. Two power-ups for
programming and for the normal modus and the first sensitivity measurement are included in this time. For a
characterization of bias slope two additional measurements would be necessary. Additional 100 ms would be
required for this characterization. For a specified sensitivity tolerance of 1 dB, a calibration without individual bias
slope characterization is sufficient.
A further advantage of microphone calibration is that improvements of other electroacoustic microphone
parameters, e.g. SNR are possible. By choosing the optimal bias and gain combination, the microphone SNR can be
improved. Figure 9 shows SNR and sensitivity for all different settings of bias and gain for one microphone.

Compared to figure 8 the graph is more scattered due to the statistic character of a short noise measurement.
High bias voltages lead to high SNR because the influence of the bias voltage on the sensitivity is higher than the
influence on the noise. Therefore, by using a high bias voltage and a matching gain calibration the microphone can
be trimmed to a high SNR. For a specified sensitivity of -38 dBV/PA a high SNR of up to 66.5 dB(A) was reached.
Figure 10 shows the distribution of the SNRs measured at one hundred microphones. Both groups were
programmed to a specified mean sensitivity of -38 dBV/Pa. After normal programming, the mean SNR was
66.1 dB(A). With an optimized algorithm, a mean SNR of 66.4 dB(A) was achieved.
4. Results and Discussion
The calibration method for microphones after fabrication presented in this paper can be used to compensate
process tolerances and packaging stress. The new programmable MEMS microphone uses an OTP module
integrated in the ASIC to program the bias supply voltage and the gain factor. Trimming bias and gain results in a
parallel shift of the frequency response. By using the optimal bias and gain combination a sensitivity adjustment
with a wide range of approximately 11 dBV is can be achieved.
The programming method allows compensating the sensitivity variations caused by process tolerances of the
fabrication processes. Specification limits of 1 dB can be fulfilled with a high production yield. In addition, MEMS
microphones can be calibrated towards a higher SNR. High SNR above 66 dB(A) could be reached in mass
production. High bias supply voltages shift the microphones closer towards the nonlinear region. Therefore, a
drawback of programming towards high SNR are higher total harmonic distortions.
An even narrower sensitivity deviation would be possible if the influence of the bias setting on the sensitivity was
characterized for each single device. This would, of course, result in longer testing times.

Sensors and Actuators A

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Microphones by Programming, Procedia Engineering 120 (2015) pp. 206-209.
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S.S Je, J.C. Harrison, M.N Kozicki, B. Bakkaloglu, S. Kiaei, J. Chae, In situ tuning of a MEMS microphone using electrodeposited
nanostructures, Journal of Micromechanics and Microengineering, 2009, vol. 19.
G. Feiertag, M. Winter, A. Leidl, Packaging of MEMS microphones, Proceedings of Smart Sensors, Actuators and MEMS, Dresden,
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G. Feiertag, M. Winter, A. Leidl, Flip chip packaging for MEMS microphones, Journal of Microsystem Technologies Vol 16, 2010,
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M. Sc. Sebastian Walser


Sebastian Walser received his diploma degree in electrical and information technology in 2011
and his M.Sc. degree in electrical engineering in 2013 from the University of Applied Sciences
Munich. Since 2013 he is with the University of Applied Sciences Munich and is working in a
research project, called twinMikro, in cooperation with the EPCOS AG and the Fraunhofer
IIS. Since 2014 he is also a Ph.D. student of the Universitt der Bundeswehr Mnchen. His
research interests include MEMS microphones, MEMS packaging, acoustic modeling.

Dr. Christian Siegel


Christian Siegel received his diploma degree in electrical engineering from the Technical
University of Munich and his Ph.D. degree from the University of Ulm. His Ph.D. research was
on the development of a new reliable RF-MEMS technology in cooperation with the EADS. He
is currently working in the product development and engineering for MEMS microphones at
EPCOS AG.

Dr. Matthias Winter


Matthias Winter received his diploma degree in physics in 2006 from the Technical University
of Munich and his Ph.D. degree in 2011 from the University of Saarland. His Ph.D. research
was on a new MEMS microphone chip-scale package in cooperation with the EPCOS AG. He
is currently working in the product development and engineering for MEMS microphones at
EPCOS AG.

Prof. Dr. Gregor Feiertag


Gregor Feiertag investigated the precision of the structure transfer of x-ray lithography at the
Institute for Micro Technology in Mainz (IMM) as part of his Ph.D. research work. From 1999
to 2009 he developed packaging technologies for Surface Acoustic Wave Components (SAW),
MEMS microphones and pressure sensors at EPCOS in Munich. He is now at the Munich
University of Applied Sciences as a professor for electronic packaging and sensors in the
department of electrical engineering. His main research subject is packaging of sensors and
SAW-components.
B. Eng. Michael Loibl
Michael Loibl received his B.Eng. degree in electrical and information technology from the
University of Applied Sciences Munich. Since 2013 he is with the University of Applied
Sciences Munich and is working in a research project, called twinMikro, in cooperation with
the EPCOS AG and the Fraunhofer IIS.

Dr. Anton Leidl


Anton Leidl received his diploma degree in physics in 1992 from the Technical University in
Munich and his Ph.D. degree in Electrical Engineering from the 'Universitt der Bundeswehr'
in 1998. From 1993 till 2000 he was responsible for the team 'Sensors for Liquids' at the
Fraunhofer Insitute for Solid State Technology. Since 2001 Dr. Leidl is with EPCOS AG,

Sensors and Actuators A

Munich and is heading the Business Unit MEMS Microphones and Pressure Sensors since 2010.

MEMS microphone
Sensor

GND

ASIC
amplifier

OUT+

backplate
membrane

Bias voltage
generator

VDD
4-bits

backplate
amplifier

OUT4-bits

5-bits
one-time-programmable
(OTP) memory

CLK
DATA

Fig. 1: Schematic of a programmable differential capacitive MEMS microphone: As transducer, a double-backplate sensor chip is used. By
programming the one-time-programmable (OTP) module in the ASIC the gain and the bias voltage can be adjusted. Five bits are reserved for bias
and four bits for gain setting.

Membrane displacement

Fmech kmembrane (x0 x)

backvolume
2x0

BP2
Vbias

x0
x

Fel2 Fmech

Membrane

BP1
sound
pressure

A (Vbias)2 / (2(2x0 x)2)

Fel1

- A (Vbias)2 / (2x2)

Vbias

Fel1
0

Fel2

non-linear
increasing
to pull-in

Bias voltage supply

Fig. 2: Top left: Illustration of a double backplate sensor with the membrane deflection x, the mechanical force Fmech and the two electrical forces
Fel1 and Fel2 in case of a sound pressure. Lower graph: Membrane displacement as a function of the bias voltage for a constant sound pressure is.

Sensors and Actuators A

11

1.45 mm
venthole

1.45 mm

Sensor chip

backplate

Fig. 3: Left: Double-backplate sensor chip with a size of 1.45 x 1.45 mm2; Bottom right: Backplate with perforation; Top right: Backplate with
venthole for pressure exchange between frontvolume and backvolume.

a)

Sensor Chip

Metal Cap

ASIC Chip
Polymer Foil

Backplate
Adhesive

Membrane
Ceramic Substrate
(HTTC)
Backplate
Sound Hole

b)

c)

Solder Balls

d)

Fig. 4: Sectional view of: a) Complete fabricated microphone [5]; b) Sensor chip flip-chip process; c) Separation of front- and back-volume by
polymer foil lamination process; d) Closure of the microphone back-volume by a metal lid.

Sensors and Actuators A

b)

-96

f)

y = 1.0093x - 39.525

y = 1.0121x - 43.392

-98

Noise / dBV(A)

Maximum bias voltage

-102
-104
-106

y = 0.9188x - 108.18

-108

g)

-96

y = 1.6231x - 59.504

y = 1.1472x - 112.61

-100
-102
-104

y = 1.0116x - 118.19

-106
-108

-110

c)

-110

h)

67.0

67.0

y = 0.0299x + 66.257

y = 0.4409x + 61.124

66.5

66.5

SNR / dB(A)

SNR / dB(A)

Maximum gain factor

y = 1.5877x - 51.48

-98

y = 0.9792x - 105.78

-100

Minimum gain factor


-31
-33
-35
-37
-39
-41
-43
-45

Noise / dBV(A)

-31
-33
-35
-37
-39
-41
-43
-45

Sensitivity / dBV/Pa

Minimum bias voltage

Sensitivity / dBV/Pa

a)

13

66.0
65.5
65.0

66.0
65.5
y = 0.6119x + 58.686
65.0

y = 0.0931x + 64.792

i)

amplifier influence

0.25
0.20
0.15
0.10
0.05
0.00
0

THD @ 110 dBSPL / %

THD @ 110 dBSPL / %

d)

64.5
0.30

64.5
0.30
y = 0.0454x - 0.3121

0.25
0.20
0.15
0.10
0.05

y = 0.0258x - 0.2055

0.00
9.5

-34

j)

Maximum gain factor

Sensitivity / dBV/Pa

Sensitivity / dBV/Pa

-32
-36
-38

shift

-40
-42
-44

Minimum gain factor

-46
100

1000
Frequency / Hz

10.5

11.0

11.5

12.0

12.5

Programmed bias voltage / V

Programmed gain factor / dB

e)

10.0

10000

-32
-34

Maximum bias voltage

-36
-38

shift

-40
-42

Minimum bias voltage

-44
-46
100

1000
Frequency / Hz

10000

Fig. 5: Measured influence of programming on the electroacoustic microphone characteristics: a) Sensitivity as a function of the gain factor; b)
Noise as a function of the gain factor; c) SNR as a function of the gain factor; d) THD as a function of the gain factor; e) frequency response for
max and min gain factors; f) Sensitivity as a function of the bias voltage; g) Noise as a function of the bias voltage; h) SNR as a function of the
bias voltage; i) THD as a function of the bias voltage; e) frequency response for max and min bias voltage.

Number of measured microphones

100
80
60
40
20

-36.0

-36.2

-36.4

-36.6

-36.8

-37.0

-37.2

-37.4

-37.6

-37.8

-38.0

-38.2

-38.4

-38.6

-38.8

-39.0

-39.2

-39.4

-39.6

-39.8

-40.0

Sensitivity (@ 1kHz) / dBV/Pa


Fig. 6: Measured sensitivity distribution of one MEMS microphone production lot after fabrication: For a designed mean sensitivity value of 38 dBV/Pa a standard deviation of 0.57 dB was reached. For a specified sensitivity tolerance of 1 dB, the yield would be below 90 %.

Sensors and Actuators A


all prog. values

MIN gain

MIN bias

MAX bias

15
MAX gain

Sensitivity (@ 1 kHz) / dBV/Pa

-30
-32

gain
-34
-36

bias
gain steps

-38
-40
-42
-44
Different programmed settings

Fig. 7: Sensitivity for all gain and bias combinations, exemplarily measured at one microphone device: gain adjustment shown in 16 steps
between the 32 different diagonal bias lines.

Number of measured microphones

before programming (standard deviation = 0.57 dB)

after programming (standard deviation = 0.06 dB)

180
160
140
120
100
80
60
40
20

Sensitivity (@ 1kHz) / dBV/Pa


Fig. 8. Sensitivity distribution of one production lot after fabrication (before programming) and after trimming (after programming): The
standard deviation of the sensitivity was reduced from 0.57 dB to 0.06 dB by programming.

-36.0

-36.2

-36.4

-36.6

-36.8

-37.0

-37.2

-37.4

-37.6

-37.8

-38.0

-38.2

-38.4

-38.6

-38.8

-39.0

-39.2

-39.4

-39.6

-39.8

-40.0

Sensors and Actuators A


min GAIN

max GAIN

17

min BIAS

max BIAS

67.0

SNR / dB(A)

66.5

66.0

65.5

high SNR
for a specified
sensitivity

65.0

64.5
-44

-42

-40

-38

-36

-34

-32

-30

Sensitivity (@ 1kHz) / dBV/Pa


Fig. 9. SNR and sensitivity for all different settings of bias and gain for one microphone: By increasing bias voltages the SNR increases
significantly, Gain can be used for programming sensitivity without significant influence on SNR.

Prog. (-38dBV)

Prog. (-38dBV and high SNR)

Number of measured microphone samples

25

20

15

10

0
65.5

65.6

65.7

65.8

65.9

66.0

66.1

66.2

66.3

66.4

66.5

66.6

66.7

66.8

66.9

67.0

Signal to noise ratio / dB(A)


Fig. 10. SNR distribution of one hundred microphones programmed to a mean sensitivity of -38 dBV: with an optimized algorithm, the SNR was
trimmed to a higher mean SNR value of 66.4 dB(A).

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