2MBI100N-120

IGBT Module

1200V / 100A 2 in one-package

Features
High speed switching
Voltage drive
Low inductance module structure

Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector Continuous
current
1ms
Continuous
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque

Symbol
VCES
VGES
IC
IC pulse
-IC
-IC pulse
PC
Tj
Tstg
Vis
Mounting *1
Terminals *2

Rating
1200
20
100
200
100
200
780
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5

Unit
V
V
A
A
A
A
W
C
C
V
Nm
Nm

Equivalent Circuit Schematic

C2E1

E2

C1

G1

E1
G2
Current control circuit

*1 : Recommendable value : 2.5 to 3.5 Nm(M5) or (M6)

*2 : Recommendable value : 3.5 to 4.5 Nm(M6)

Electrical characteristics (at Tj=25C unless otherwise specified)

Item

Symbol

Zero gate voltage collector current

Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time

ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr

Turn-off time
Diode forward on voltage
Reverse recovery time

Characteristics
Min.
Typ.
Max.

2.0

30
4.5

7.5

3.3

16000

5800

5160

0.65 1.2

0.25 0.6

0.85 1.5

0.35 0.5

3.0

0.35

Conditions

Unit

VGE=0V, VCE=1200V
VCE=0V, VGE=20V
VCE=20V, IC=100mA
VGE=15V, IC=100A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=15V
RG=9.1 ohm
IF=100A, VGE=0V
IF=100A

mA
A
V
V
pF

Conditions

Unit

IGBT
Diode
the base to cooling fin

C/W
C/W
C/W

V
s

Thermal resistance characteristics

Item
Thermal resistance

Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*3

Characteristics
Min.
Typ.

0.025

Max.
0.16
0.43

*3 : This is the value which is defined mounting on the additional cooling fin with thermal compound

E2

IGBT Module

2MBI100N-120
Characteristics (Representative)

Collector current vs. Collector-Emitter voltage

Tj=125C

250

250

200

200

Collector current : Ic [A]

Collector current : Ic [A]

Collector current vs. Collector-Emitter voltage

Tj=25C

150

100

50

Collector-Emitter voltage : VCE [V]

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage

Tj=25C

Collector-Emitter vs. Gate-Emitter voltage

Tj=125C

VCE [V]

10

Collector-Emitter voltage :

VCE [V]

100

50

10

Collector-Emitter voltage :

150

0
0

10

15

20

25

10

Gate-Emitter voltage : VGE [V]

15

20

25

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current

Vcc=600V, RG=9.1 ohm, VGE=15V, Tj=25C

Switching time vs. Collector current

Vcc=600V, RG=9.1 ohm, VGE=15V, Tj=125C

1000

Switching time : ton, tr, toff, tf [n sec.]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

100

10

10
0

50

100
Collector current : Ic [A]

150

200

50

100
Collector current : Ic [A]

150

200

IGBT Module

2MBI100N-120

Dynamic input characteristics

1000

1000

25

800

20

600

15

400

10

200

100

10

30

0
0

50

400

0
1200

800

Gate charge : Qg [nC]

Gate resistance : RG [ohm]

Reverse recovery characteristics

trr, Irr, vs. IF

Forward current vs. Forward voltage

VGE=0V
250

Collector current : -Ic [A]

(Forward current : IF [A] )

Reverse recovery current : Irr [A]

Reverse recovery time : trr [n sec.]

200

150

100

50

100

50

10

0
0

50

150

200

Reversed biased safe operating area

< 15V, Tj <
+VGE=15V, -VGE =
= 125C, RG >
= 9.1 ohm

Switching loss vs. Collector current

Vcc=600V, RG=9.1 ohm, VGE=15V
1000

40

800
30
Collector current : Ic [A]

Switching loss : Eon, Eoff, Err [mJ/cycle]

100
Forward current : IF [A]

Emitter-Collector voltage VECD [V]

(Forward voltage : VF [V])

20

600

400

10
200

0
0

50

100

Collector current : Ic [A]

150

200

200

400
600
800
1000
Collector-Emitter voltage : VCE [V]

1200

Gate-Emitter voltage : VGE [V]

Tj=25C

Collector-Emitter voltage : VCE [V]

Switching time : ton, tr, toff, tf [n sec.]

Switching time vs. RG

Vcc=600V, Ic=100A, VGE=15V, Tj=25C

IGBT Module

2MBI100N-120

Capacitance vs. Collector-Emitter voltage

Tj=25C

Transient thermal resistance

Capacitance : Cies, Coes, Cres [nF]

Thermal resistance : R th (j-c) [C/W]

0.1

0.01

10

0.001
0.001

0.01

0.1

Pulse width : PW [sec.]

10

15

20

25

Collector-Emitter voltage : VCE [V]

Outline Drawings, mm

mass : 370g

30

35