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W.
Erickson
Department
of
Electrical,
Computer,
and
Energy
Engineering
University
of
Colorado,
Boulder
so
vg(t)
i g(t) =
Re
2
V 2M
V
pac(t) =
sin 2 t = M 1 cos 2t
Re
2Re
51
d EC(t)
pC(t) =
=
dt
1
2
Cv 2C(t)
dt
= pac(t) pload(t)
52
Pload
vc(t)
1
2
Cv 2C(t)
dt
= pac(t) pload(t)
t
Fundamentals of Power Electronics
53
iac(t)
vac(t)
pload(t) = VI = Pload
ig(t)
vg(t)
pac(t)T
+
s
Re
vC(t)
Dcdc
converter
i(t)
v(t)
load
Energy storage
capacitor
1
2
Cv 2C(t)
dt
= pac(t) pload(t)
54
Wide-bandwidth control of
output voltage
Wide-bandwidth control of
input current waveform
Hold up time
Internal energy storage allows the system to function in other
situations where the instantaneous input and output powers differ.
55
56
Inrush current
A problem caused by the large energy storage capacitor: the large
inrush current observed during system startup, necessary to charge
the capacitor to its equilibrium value.
Boost converter is not capable of controlling this inrush current.
Even with d = 0, a large current flows through the boost converter
diode to the capacitor, as long as v(t) < vg(t).
Additional circuitry is needed to limit the magnitude of this inrush
current.
Converters having buck-boost characteristics are capable of
controlling the inrush current. Unfortunately, these converters exhibit
higher transistor stresses.
57
Universal input
The capability to operate from the ac line voltages and frequencies
found everywhere in the world:
50Hz and 60Hz
Nominal rms line voltages of 100V to 260V:
100V, 110V, 115V, 120V, 132V, 200V, 220V, 230V, 240V, 260V
Regardless of the input voltage and frequency, the near-ideal rectifier
produces a constant nominal dc output voltage. With a boost
converter, this voltage is 380 or 400V.
58
+
C
vC(t)
+
Pload V +
Energy storage
capacitor
59
load
i(t)
v(t) load
Dc-dc
converter
pload(t) = VI = Pload
i2(t)
ig(t)
+
vg(t)
pac(t)Ts
Re
vC(t)
+
Pload V +
Energy storage
capacitor
i(t)
v(t) load
Dc-dc
converter
60
iac(t)
vac(t)
pload(t) = VI = Pload
i2(t)
ig(t)
+
vg(t)
pac(t)Ts
Re
vC(t)
+
Pload V +
v(t) load
Energy storage
capacitor
i(t)
Dc-dc
converter
If the load power exceeds the average rectifier power, then there is a
net discharge in capacitor energy and voltage over one ac line cycle.
There is a net increase in capacitor charge when the reverse is true.
This suggests that rectifier and load powers can be balanced by
regulating the energy storage capacitor voltage.
61
A complete 1 system
containing three feedback loops
Boost converter
i2(t)
+
ig(t)
+
iac(t)
vac(t)
D1
vg(t)
Q1
vC(t)
vcontrol(t)
vg(t)
Multiplier
i(t)
DCDC
Converter
Load v(t)
ig(t)
Rs
d(t)
PWM
v(t)
va(t)
vref1(t)
= kxvg(t)vcontrol(t)
v (t)
+ err
Gc(s)
Compensator
and modulator
+ vref3
Compensator
+ vref2
62
pac(t)
p (t)
Pload
= load
=
vac(t)
vac(t)
VM sin t
63
pac(t)
p (t)
Pload
= load
=
vac(t)
vac(t)
VM sin t
THD
Power factor 0
vac(t)
iac(t)
64
So bandwidth of
capacitor voltage
loop must be
limited, and THD
increases rapidly
with increasing
bandwidth
65
ig(t)Ts
p(t)T
vg(t)T
i2(t)T
+
s
Re (vcontrol )
v(t)T
Load
ac
input
dc
output
vcontrol
66
ig(t)Ts
p(t)T
vg(t)T
Re (vcontrol )
i2(t)T
+
s
v(t)T
Then the
instantaneous power
is:
vg(t)
ac
input
dc
output
vcontrol
v 2g,rms
p(t) T =
=
1 cos 2t
s
Re(vcontrol(t)) Re(vcontrol(t))
Ts
67
Load
+
V 2g,rms
cos 2 2t
Re
V 2g,rms
Re
v(t)Ts
Load
68
v(t)
v(t)Ts
v(t)T
2L
T2L =
1
2
69
2 =
i2(t)T2L
+
V 2g,rms
Re
v(t)T2L
Load
70
i 2(t)
T 2L
p(t)
v(t)
T 2L
T 2L
v 2g,rms(t)
Re(vcontrol(t)) v(t)
= f vg,rms(t), v(t)
Let
T 2L
, vcontrol(t))
T 2L
with
v(t)
i 2(t)
T 2L
T 2L
= V + v(t)
V >> v(t)
= I 2 + i 2(t)
I 2 >> i 2(t)
Linearized result
vcontrol(t)
I 2 + i 2(t) = g 2vg,rms(t) + j2v(t)
r2
where
g2 =
df vg,rms, V, Vcontrol)
dvg,rms
1 =
r2
j2 =
Vg,rms
2
=
Re(Vcontrol) V
v g,rms = V g,rms
df Vg,rms, v
d v
, Vcontrol)
T 2L
T 2L
I2
=
V
v T =V
2L
df Vg,rms, V, vcontrol)
dvcontrol
v control = V control
72
V 2g,rms
dRe(vcontrol)
=
VR 2e (Vcontrol) dvcontrol
v control = V control
+
r2
j2 vcontrol
g 2 vg,rms
Control-to-output
v(s)
1
= j2 R||r 2
vcontrol(s)
1 + sC R||r 2
Line-to-output
v(s)
1
= g 2 R||r 2
vg,rms(s)
1 + sC R||r 2
73
Model parameters
Table 18.1 Small-signal model parameters for several types of rectifier control schemes
Controller type
g2
j2
r2
Pav
VVcontrol
V2
Pav
Current-programmed control,
Fig. 18.16
2Pav
VVg,rms
Pav
VVcontrol
V2
Pav
2Pav
VVg,rms
Pav
VVcontrol
V2
2Pav
2Pav
VVg,rms
Pav
VVcontrol
V2
Pav
2Pav
VVg,rms
2Pav
VD
V2
Pav
74
iac(t)
vg(t)
vac(t)
pload(t) = VI = Pload
i2(t)
Re
pac(t)Ts
vC(t)
Pload V +
v(t) load
Energy storage
capacitor
i(t)
Dc-dc
converter
75
j2
v(s)
=
vcontrol(s) sC
g2
v(s)
=
vg,rms(s) sC
76
iQ(t)
t
Computation of rms value of this waveform is complex and tedious
Approximate here using double integral
Generate tables of component rms and average currents for various
rectifier converter topologies, and compare
Fundamentals of Power Electronics
77
1
Tac
T ac
iQ(t)
i 2Q(t)dt
1 T
Tac s
T ac/T s
n=1
1
Ts
nT s
i 2Q(t)dt
(n-1)T s
78
T ac/T s
1 T
Tac s
1
Ts
n=1
nT s
i 2Q(t)dt
(n-1)T s
I Qrms
=
=
Fundamentals of Power Electronics
1 lim T
Tac T s0 s
1
Tac
T ac
i 2Q(t)
79
Ts
1
Ts
T ac/T s
n=1
t+T s
1
Ts
nT s
i 2Q()d
(n-1)T s
i 2Q()d dt
T ac
2
Q T
s
t+T s
= 1
i 2Q(t)dt
Ts t
= d(t)i 2ac(t)
VM
i ac(t) =
sin t
Re
and the duty cycle will ideally be
V =
1
vac(t) 1 d(t)
Fundamentals of Power Electronics
80
(this neglects
converter dynamics)
Chapter 18: PWM Rectifiers
VM
d(t) = 1
sin t
V
2
Q T
s
V 2M
VM
= 2 1
sin t
V
Re
sin 2 t
I Qrms =
=
I Qrms =
Fundamentals of Power Electronics
1
Tac
T ac
i 2Q
0
T ac
1
Tac
2
M
2
e
2 V
Tac R
81
Ts
dt
V 2M
VM
1
sin t
2
V
Re
T ac/2
sin 2 t
0
sin 2 t dt
VM
sin 3 t dt
V
Chapter 18: PWM Rectifiers
sin ()d =
0
2 246 (n 1) if n is odd
135 n
135 (n 1)
if n is even
246 n
82
sin n ()d
1
2
4
3
3
8
16
15
15
48
Chapter 18: PWM Rectifiers
VM
I Qrms =
2 Re
VM
8
1
3 V
= I ac rms
VM
8
1
3 V
When the dc output voltage is not too much greater than the peak ac
input voltage, the boost rectifier exhibits very low transistor current.
Efficiency of the boost rectifier is then quite high, and 95% is typical in
a 1kW application.
83
Tabl e 18. 3
Average
Peak
CCM boost
Transistor
I ac rms
Diode
I dc
VM
1 8
3 V
V
I ac rms 2 2 1 M
8 V
16 V
3 V M
I dc
I ac rms 2 2
I ac rms
Inductor
I ac rms 2
2 I dc V
VM
I ac rms 2
I ac rms
L1
C1
Diode,
xfmr secondary
I ac rms
I dc
V
1+ 8 M
3 nV
I ac rms 2 2
I ac rms
I ac rms 2 2
8 VM
3 nV
3 + 16 nV
2 3 V M
I dc
84
I ac rms 2 1 +
V
n
I ac rms 2
I ac rms 2 max 1,
VM
nV
2I dc 1 + nV
VM
V
1+ 8 M
3 V
I ac rms
I ac rms
L1
C1
8 VM
3 V
I ac rms
L2
I dc
I ac rms 2 1 +
I ac rms 2 2
I ac rms 2
VM 3
V 2
I ac rms V M
2 V
3 + 16 V
2 3 V M
I dc
I ac rms
Diode
I ac rms 2 2
I ac rms max 1,
I ac rms
VM
V
VM
V
VM
2
V
2I dc 1 + V
VM
I ac rms
V
1+ 8 M
3 nV
I ac rms
L1
C1,
xfmr primary
Diode,
xfmr secondary
I ac rms
I dc
8 VM
3 nV
3 + 16 nV
2 3 V M
I ac rms 2 2
I ac rms 2 1 +
I ac rms 2 2
I ac rms 2
I dc
VM
nV
I ac rms 2 max 1,
2I dc 1 + nV
VM
I ac rms
= 2 V , ac input voltage = V M sin( t)
VM
I dc
dc output voltage = V
with, in all cases,
85
86
Transistor rms
current
Transistor
voltage
Diode rms
current
Transistor rms
current, 120V
Diode rms
current, 120V
Boost
2A
380 V
3.6 A
6.6 A
5.1 A
Nonisolated
SEPIC
5.5 A
719 V
4.85 A
9.8 A
6.1 A
Isolated
SEPIC
5.5 A
719 V
36.4 A
11.4 A
42.5 A
Isolated SEPIC example has 4:1 turns ratio, with 42V 23.8A dc load
87
D1
ig(t)
i(t)
+
vg(t)
Q1
v(t) vg(t)
RL
DRon
D' : 1
VF
i(t)
ig(t)
RL
+
R
Averaged dc model
88
v(t)
ig(t)
+
iac(t)
id(t)
RL
D1
vg(t)
vac(t)
i(t)
Q1
v(t)
controller
Averaged
model
vg(t)
RL
d(t) Ron
d'(t) : 1
VF
ig(t)
id(t)
i(t) = I
+
C
(large)
v(t) = V
89
ig(t)
300
10
vg(t)
Typical waveforms
200
ig(t)
vg(t)
ig(t) =
Re
100
2
0
0
0
d(t)
30
60
90
120
150
180
0.8
id(t)
0.6
i(t) = I
0.4
0.2
30
60
90
120
150
180
30
60
90
120
150
180
90
id(t)
d(t) Ron
vg(t)
i(t) = I
d'(t) : 1
C
(large)
v(t) = V
Averaged model
Inductor dynamics are neglected, a good approximation when the ac
line variations are slow compared to the converter natural frequencies
91
d(t) Ron
with
vg(t)
ig(t) =
Re
vg(t)
i(t) = I
d'(t) : 1
id(t)
C
(large)
v(t) = V
vg(t) = VM sin t
eliminate ig(t):
v vg(t)
d(t) =
Ron
v vg(t)
Re
vg(t)
d(t)Ron = vg(t) d'(t)v
Re
92
ig(t)
d(t) Ron
vg(t)
i(t) = I
d'(t) : 1
id(t)
C
(large)
vg(t)
i d (t) = d'(t)i g(t) = d'(t)
Re
v(t) = V
Butd(t) is:
hence id(t) can be expressed as
Ron
vg(t) 1
Re
d'(t) =
Ron
v vg(t)
Re
Ron
1
2
Re
v g(t)
i d (t) =
Re
Ron
v vg(t)
Re
Next, average id(t) over an ac line period, to find the dc load current I.
Fundamentals of Power Electronics
93
Dc load current I
Now substitute vg (t) = VM sin t, and integrate to find id(t)Tac:
T ac/2
I = id
V 2M
Re
2
=
T ac
Tac
Ron
1
sin 2 t
Re
v
VM Ron
sin t
Re
dt
2
M
Ron
V
2
I=
1
Tac VRe
Re
with
a=
VM
V
sin 2 t
1 a sin t
dt
Ron
Re
94
Integration
By waveform symmetry, we need only integrate from 0 to Tac/4. Also,
make the substitution = t:
I=
/2
2
M
V
R 2
1 on
VRe
Re
sin 2
1 a sin
This integral is obtained not only in the boost rectifier, but also in the
buck-boost and other rectifier topologies. The solution is
/2
sin 2
d = F(a) = 22
a
1 a sin
1 a2
2a +
4 sin 1 a + 2 cos 1 a
95
sin 2
d = F(a) = 22
a
1 a sin
Approximation via
polynomial:
1 a2
1.15
1.1
2a +
4 sin 1 a + 2 cos 1 a
1.05
F(a)
1
0.95
0.9
0.85
0.15
0.10
0.05
0.00
0.05
0.10
0.15
a
96
V 2M
Pin = pin(t) T =
ac
2Re
Average load power is
Pout = VI = V
V 2M
Ron F(a)
1
VRe
Re
2
VM
a=
V
with
Ron
Re
So the efficiency is
Pout
Ron
=
= 1
F(a)
Pin
Re
Polynomial approximation:
Ron
Re
1 + 0.862
VM Ron
V R
+ 0.78 M on
V Re
V Re
97
Pout
Ron
=
= 1
F(a)
Pin
Re
.05
R on /R e = 0
0.95
=
R on/R e
0.9
0.1
To obtain high
efficiency, choose V
slightly larger than VM
0.15
=
R
R on/ e
0.2
=
/R e
R on
0.85
0.8
0.75
0.0
0.2
0.4
0.6
0.8
VM /V
98
1.0
Pout 500 W
Pin = =
= 526 W
0.95
Then the emulated resistance is
99
Design example
Also,
VM 120 2 V
=
= 0.435
V
390 V
.05
R on /R e = 0
0.95
=
R on/R e
0.9
So we require a
MOSFET with on
resistance of
0.1
0.15
=
R
R on/ e
0.2
=
/R e
R on
0.85
0.8
Ron (0.075) Re
= (0.075) (27.4 ) = 2
0.75
0.0
0.2
0.4
0.6
0.8
1.0
VM /V
Fundamentals of Power Electronics
100