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1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.3 Applications
DC-to-DC converters
Motor control
Load switching
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source voltage
Tj 25 C; Tj 175 C
30
ID
drain current
Tmb = 25 C; VGS = 10 V;
see Figure 1
30
Ptot
41
Tj
junction temperature
-55
175
VGS = 4.5 V; ID = 5 A;
Tj = 25 C; see Figure 13
27
34
VGS = 10 V; ID = 5 A;
Tj = 25 C; see Figure 13
19
22
VGS = 4.5 V; ID = 5 A;
VDS = 15 V; see Figure 14;
see Figure 15
1.4
nC
4.4
nC
VGS = 10 V; Tj(init) = 25 C;
ID = 30 A; Vsup 30 V;
RGS = 50 ; unclamped
mJ
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
PSMN022-30PL
NXP Semiconductors
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
gate
drain
Simplified outline
Graphic symbol
D
mb
source
mb
G
mbb076
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
PSMN022-30PL
PSMN022-30PL
Package
Name
Description
Version
TO-220AB
SOT78
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4. Limiting values
Table 4.
Limiting values
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj 25 C; Tj 175 C
30
VDGR
drain-gate voltage
Tj 25 C; Tj 175 C; RGS = 20 k
30
VGS
gate-source voltage
ID
drain current
-20
20
22
30
125
IDM
Ptot
41
Tstg
storage temperature
-55
175
Tj
junction temperature
-55
175
Source-drain diode
IS
source current
Tmb = 25 C
30
ISM
pulsed; tp 10 s; Tmb = 25 C
125
VGS = 10 V; Tj(init) = 25 C; ID = 30 A;
Vsup 30 V; RGS = 50 ; unclamped
mJ
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
EDS(AL)S
003aad360
50
ID
(A)
03aa16
120
Pder
(%)
40
80
30
20
40
10
Fig 1.
50
100
150
Tmb (C)
200
PSMN022-30PL
50
100
150
200
Tmb (C)
Fig 2.
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003aad384
103
ID
(A)
Limit RDSon = VDS / ID
102
10 s
10
100 s
1 ms
10 ms
DC
100 ms
10-1
1
Fig 3.
10
VDS (V)
102
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
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5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
see Figure 4
3.1
3.6
K/W
003a a d356
10
Zth (j-mb)
(K/W)
= 0.5
0.2
0.1
0.05
=
0.02
101
tp
T
single shot
t
tp
T
102
106
Fig 4.
105
104
103
102
101
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
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6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS = 0 V; Tj = 25 C
30
27
VGS(th)
1.3
1.7
2.15
0.5
2.45
0.3
IDSS
VDS = 30 V; VGS = 0 V; Tj = 25 C
VDS = 30 V; VGS = 0 V; Tj = 125 C
50
IGSS
VGS = 16 V; VDS = 0 V; Tj = 25 C
10
100
nA
10
100
nA
64.6
VGS = 4.5 V; ID = 5 A; Tj = 25 C;
see Figure 13
27
34
VGS = 10 V; ID = 5 A; Tj = 175 C;
see Figure 12
35
41.8
VGS = 10 V; ID = 5 A; Tj = 100 C;
see Figure 12
31
VGS = 10 V; ID = 5 A; Tj = 25 C;
see Figure 13
19
22
f = 1 MHz
ID = 5 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
nC
4.4
nC
1.6
nC
0.8
nC
0.8
nC
RDSon
RG
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
QGS
gate-source charge
QGS(th)
pre-threshold gate-source
charge
QGS(th-pl)
post-threshold gate-source
charge
QGD
gate-drain charge
1.4
nC
VGS(pl)
Ciss
input capacitance
Coss
output capacitance
Crss
PSMN022-30PL
447
pF
96
pF
61
pF
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Table 6.
Characteristics continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
12
ns
tr
rise time
29
ns
td(off)
17
ns
tf
fall time
ns
0.7
1.2
Source-drain diode
VSD
source-drain voltage
IS = 5 A; VGS = 0 V; Tj = 25 C;
see Figure 17
trr
Qr
recovered charge
003a a d422
20
4.5
10
ID
(A)
22
ns
10
nC
003aad424
30
ID
(A)
25
15
20
15
10
10
5
2.8
Tj = 175 C
Tj = 25 C
2.6
2.4
0
0
0.5
1.5
0
0
VDS (V)
Fig 5.
PSMN022-30PL
Fig 6.
VGS (V)
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003aad428
900
C
(pF)
003aad429
20
gfs
(S)
800
Ciss
15
700
10
Crss
600
5
500
400
0
0
Fig 7.
VGS (V)
12
50
RDSon
(m)
Fig 8.
10
15
20
25 I (A) 30
D
10-1
ID
(A)
10-2
40
min
typ
max
10-3
30
10-4
20
10-5
10-6
10
0
Fig 9.
10
15
VGS (V)
20
PSMN022-30PL
VGS (V)
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003a a c982
03aa27
2
a
VGS (th)
(V)
max
1.5
2
typ
1
min
1
0.5
0
-60
60
120
Tj (C)
180
0
60
60
120
Tj (C)
180
003a a d423
100
3.5
RDSon
(m)
VDS
ID
80
VGS(pl)
60
VGS(th)
VGS (V) = 4.5
VGS
40
QGS1
10
QGS2
QGS
20
QGD
QG(tot)
003aaa508
0
0
10
20
ID (A)
30
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003aad426
10
VGS
(V)
8
003aad427
103
C
(pF)
6V
Ciss
24 V
102
VDS = 15 V
Coss
4
Crss
2
0
0
10
10-1
10
QG (nC)
10
VDS (V)
102
30
IS
(A)
25
20
15
10
Tj = 175 C
Tj = 25 C
0
0
0.3
0.6
0.9
VSD (V)
1.2
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
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7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
A
A1
mounting
base
D1
L1(1)
L2(1)
Q
b1(2)
(3)
b2(2)
(2)
1
b(3)
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A1
b1(2)
b2(2)
D1
L1(1)
L2(1)
max.
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
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8. Revision history
Table 7.
Revision history
Document ID
Release date
Change notice
Supersedes
PSMN022-30PL v.2
20101101
PSMN022-30PL v.1
Modifications:
PSMN022-30PL v.1
PSMN022-30PL
20101018
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9. Legal information
9.1
Document status[1][2]
Product status[3]
Definition
Development
This document contains data from the objective specification for product development.
Qualification
Production
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Limiting values Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
PSMN022-30PL
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product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors specifications such use shall be solely at customers
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors
standard warranty and NXP Semiconductors product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
PSMN022-30PL
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11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.