Ion Implantation

IonImplantation

SemiconductorManufacturing
Process

Diffusion Process
DiffusionProcess

Ion Implantation
IonImplantation

ComparisonofDiffusionandIon
Implantation
l
i
Diffusionisacheaperandmoresimplisticmethod,butcan
onlybeperformedfromthesurfaceofthewafers.Dopants
alsodiffuseunevenly,andinteractwitheachotheraltering
thediffusionrate.
Ionimplantationismoreexpensiveandcomplex.Itdoesnot
require high temperatures and also allows for greater
requirehightemperaturesandalsoallowsforgreater
controlofdopantconcentrationandprofile.Itisan
anisotropicprocessandthereforedoesnotspreadthe
dopant implant as much as diffusion This aids in the
dopantimplantasmuchasdiffusion.Thisaidsinthe
manufactureofselfalignedstructureswhichgreatly
improvetheperformanceofMOStransistors.

DopeSemiconductor:IonImplantation
Usedforatomicandnuclearresearch
Earlyideaintroducedin1950
Early idea introduced in 1950ss
Introducedtosemiconductor
manufacturing in mid 1970s
manufacturinginmid1970s.

HongXiao,Ph.D.

www2.austin.cc.tx.us/HongXiao/Book.htm

DopeSemiconductor:IonImplantation
Independentlycontroldopantprofile(ion
gy)
p
(
energy)anddopantconcentration(ion
currenttimesimplantationtime)
Anisotropicdopantprofile
Anisotropic dopant profile
Easytoachievehighconcentrationdopeof
heavy dopant atom such as phosphorus
heavydopantatomsuchasphosphorus
andarsenic.
HongXiao,Ph.D.

www2.austin.cc.tx.us/HongXiao/Book.htm

Misalignment of the Gate

MisalignmentoftheGate

MetalGate

nSi

p+ S/D

GateOxide

MetalGate

nSi

Aligned

HongXiao,Ph.D.

p+ S/D

Misaligned

www2.austin.cc.tx.us/HongXiao/Book.htm

IonImplantation,Phosphorus

SiO2

PolySi

P+

n+

n+
PtypeSilicon

HongXiao,Ph.D.

www2.austin.cc.tx.us/HongXiao/Book.htm

Comparisonof
ImplantationandDiffusion
l
d ff
Dopedregion

SiO2

PR

Si

Si
Junctiondepth
Diffusion

HongXiao,Ph.D.

Ionimplantation

www2.austin.cc.tx.us/HongXiao/Book.htm

Comparisonof
Comparison
of
ImplantationandDiffusion
Diffusion

Ion Implantation

High temperature, hard mask

Low temperature, photoresist mask

Isotropic dopant profile

Anisotropic dopant profile

Cannot independently control of the dopant

concentration and junction depth

Can independently control of the dopant

concentration and junction depth

Batch process

Both Batch and single wafer process

HongXiao,Ph.D.

www2.austin.cc.tx.us/HongXiao/Book.htm

10

Ion Implantation Control

IonImplantationControl
Beam
Beamcurrentandimplantationtimecontrol
current and implantation time control
dopantconcentration
Ionenergy
Ion energy controlsjunctiondepth
controls junction depth
Dopantprofileisanisotropic

HongXiao,Ph.D.

www2.austin.cc.tx.us/HongXiao/Book.htm

11

Applications of Ion Implantation

ApplicationsofIonImplantation

Applications
A
li i
Ions

HongXiao,Ph.D.

Doping
D
i
n-type: P, As, Sb
p-type: B

Pre-amorphous
P
h
Si or Ge

Buried
B
i d oxide
id
O

www2.austin.cc.tx.us/HongXiao/Book.htm

P l barrier
Poly
b i
N

12

OtherApplications
Oxygenimplantationforsiliconon
( )
insulator(SOI)device
Preamorphoussiliconimplantationon
titanium film for better annealing
titaniumfilmforbetterannealing
Preamorphousgermaniumimplantation
on silicon substrate for profile control
onsiliconsubstrateforprofilecontrol
...
HongXiao,Ph.D.

www2.austin.cc.tx.us/HongXiao/Book.htm

13

Etching
Etchingistheprocesswhereunwantedareasoffilmsare
removed by either dissolving them in a wet chemical
removedbyeitherdissolvingtheminawetchemical
solution(WetEtching)orbyreactingthemwithgasesina
plasmatoformvolatileproducts(DryEtching).
Resistprotectsareaswhicharetoremain.Insomecasesa
hard mask usually patterned layers of SiO2 orSi
hardmask,usuallypatternedlayersofSiO
or Si3N4,are
are
usedwhentheetchselectivitytophotoresistisloworthe
etchingenvironmentcausesresisttodelaminate.
Thisispartoflithography patterntransfer.

Wet Chemical Etching

WetChemicalEtching
Wetetches:
areingeneral
are in general isotropic
isotropic
(notusedtoetchfeatureslessthan3m)
achieve high selectivities for most film
achievehighselectivitiesformostfilm
combinations
p
g
g p
capableofhighthroughputs
usecomparablycheapequipment
canhaveresistadhesionproblems
canetchjustaboutanything

Example Wet Processes

ExampleWetProcesses
ForSiO2 etching
HF+NH4F+H20(bufferedoxideetchorBOE)
ForSi
For Si3N44
Hotphosphoricacid:H3PO4at180C
needtouseoxidehardmask
Silicon
Silicon
Nitric,HF,aceticacids
HNO3 +HF+CH3COOH+H2O
Aluminum
Aluminum
Acetic,nitric,phosphoricacidsat3545C
CH3COOH+HNO3+H3PO4

Whatisaplasma
( l
(glowdischarge)?
d h
)?
Aplasmaisapartiallyionizedgasmadeupofequalparts
p
positivelyandnegativelychargedparticles.
y
g
y
g p
Plasmasaregeneratedbyflowinggasesthroughanelectricor
magneticfield.
Thesefieldsremoveelectronsfromsomeofthegas
molecules.Theliberatedelectronsareaccelerated,or
energized,bythefields.
g
, y
Theenergeticelectronsslamintoothergasmolecules,
liberatingmoreelectrons,whichareacceleratedandliberate
moreelectronsfromgasmolecules,thussustainingthe
l t
f
l l th
t i i th
plasma.

Dry or Plasma Etching

DryorPlasmaEtching

Dry or Plasma Etching

DryorPlasmaEtching

Dry or Plasma Etching

DryorPlasmaEtching
Combinationofchemicalandphysicaletching Reactive
IonEtching(RIE)
Directionaletchingduetoionassistance.
Di
i
l hi d
i
i
InRIEprocessesthewaferssitonthepowered electrode.
Thisplacementsetsupanegativebiason thewaferwhich
acceleratespositivelychargeions
l
ii l h
i
towardthesurface.These
d h
f
Th
ionsenhancethe chemical
etchingmechanismsand
allowanisotropic etching.
Wetetchesaresimpler,butdryetchesprovidebetterlinewidth
controlsinceitisanisotropic.