Chapter 3

26/1/2012
Microelectronics
Circuit Analysis and Design

Donald A. Neamen
Chapter 3
The Field Effect Transistor
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 3-1
In this chapter, we will:

Study and understand the operation and characteristics of
the various types of MOSFETs.
Understand and become familiar with the dc analysis and
design techniques of MOSFET circuits.
Examine three applications of MOSFET circuits.
Investigate current source biasing of MOSFET circuits, such
as those used in integrated circuits.
Analyze the dc biasing of multistage or multitransistor
circuits.
Understand the operation and characteristics of the
junction field-effect transistor, and analyze the dc response
of JFET circuits.
Neamen
McGraw-Hill
Chapter 3-2
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Basic Structure of MOS Capacitor
Neamen
McGraw-Hill
Chapter 3-3
MOS Capacitor Under Bias:

Electric Field and Charge
Parallel plate capacitor
Neamen
Negative gate bias:
Positive gate bias:
Holes attracted to gate
Electrons attracted to gate
McGraw-Hill
Chapter 3-4
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Schematic of n-Channel
Enhancement Mode MOSFET
Neamen
McGraw-Hill
Chapter 3-5
Basic Transistor Operation
After electron
inversion layer is
formed
Before electron
inversion layer is
formed
Neamen
McGraw-Hill
Chapter 3-6
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Basic Transistor Operation
Neamen
McGraw-Hill
Chapter 3-7
Current Versus Voltage Characteristics:

Enhancement-Mode nMOSFET
Neamen
McGraw-Hill
Chapter 3-8
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Family of iD Versus vDS Curves:

Enhancement-Mode nMOSFET
Neamen
McGraw-Hill
Chapter 3-9
p-Channel Enhancement-Mode
MOSFET
Neamen
McGraw-Hill
Chapter 3-10
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Symbols for n-Channel

Enhancement-Mode MOSFET
Neamen
McGraw-Hill
Chapter 3-11
Symbols for p-Channel

Enhancement-Mode MOSFET
Neamen
McGraw-Hill
Chapter 3-12
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n-Channel Depletion-Mode MOSFET
Neamen
McGraw-Hill
Chapter 3-13
Family of iD Versus vDS Curves:

Depletion-Mode nMOSFET
Symbols
Neamen
McGraw-Hill
Chapter 3-14
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p-Channel DepletionMode MOSFET
Symbols
Neamen
McGraw-Hill
Chapter 3-15
Cross-Section of nMOSFET and pMOSFET
Both transistors are used in the fabrication of CMOS circuitry.

Neamen
McGraw-Hill
Chapter 3-16
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Summary of I-V Relationships

Region
NMOS
PMOS
Nonsaturation vDS<vDS(sat)
vSD<vSD(sat)
2
2
]
iD K n [2(vGS VTN )vDS vDS
] iD K p [2(vSG VTP )vSD vSD
Saturation
vDS>vDS(sat)
vSD>vSD(sat)
iD K n [vGS VTN ]2
iD K p [vSG VTP ]2
Transition Pt.
vDS(sat) = vGS - VTN
vSD(sat) = vSG + VTN
Enhancement
Mode
VTN > 0V
VTP < 0V
Depletion
Mode
VTN < 0V
VTP > 0V
Neamen
McGraw-Hill
Chapter 3-17
Conduction Parameters
NMOSFET
Kn
PMOSFET
Kp
where:
Neamen
W nCox
W
k n'
L
L
W p Cox
L
k p'
W
L
Cox o tox
McGraw-Hill
Chapter 3-18
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Channel Length Modulation:

Early Voltage
Neamen
McGraw-Hill
Chapter 3-19
Body Effect
Neamen
McGraw-Hill
Chapter 3-20
10
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Subthreshold Condition
Neamen
McGraw-Hill
Chapter 3-21
NMOS Common-Source Circuit
Neamen
McGraw-Hill
Chapter 3-22
11
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PMOS Common-Source Circuit
Neamen
McGraw-Hill
Chapter 3-23
Load Line and Modes of Operation:

NMOS Common-Source Circuit
Neamen
McGraw-Hill
Chapter 3-24
12
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Problem-Solving Technique:
NMOSFET DC Analysis
1. Assume the transistor is in saturation.
a. VGS > VTN, ID > 0, & VDS VDS(sat)
2. Analyze circuit using saturation I-V relations.
3. Evaluate resulting bias condition of transistor.
a. If VGS < VTN, transistor is likely in cutoff
b. If VDS < VDS(sat), transistor is likely in
nonsaturation region
4. If initial assumption is proven incorrect, make
new assumption and repeat Steps 2 and 3.
Neamen
McGraw-Hill
Chapter 3-25
Enhancement Load Device
Kn = 1mA/V2
VTN = 1V
Neamen
McGraw-Hill
Chapter 3-26
13
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Circuit with Enhancement Load

Device and NMOS Driver
ML is always in
saturation.
MD can be biased
either in saturation or
nonsaturation region.
Neamen
McGraw-Hill
Chapter 3-27
Voltage Transfer Characteristics:
NMOS Inverter with Enhancement Load Device

vI < VTN
Neamen
vI > VTN
McGraw-Hill
Chapter 3-28
14
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NMOS Inverter with

Depletion Load Device
Neamen
McGraw-Hill
Chapter 3-29
CMOS Inverter
Neamen
McGraw-Hill
Chapter 3-30
15
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2-Input NMOS NOR Logic Gate
V1 (V)
Neamen
McGraw-Hill
V2 (V) VO (V)
High
Low
Low
Low
Chapter 3-31
MOS Small-Signal Amplifier
Neamen
McGraw-Hill
Chapter 3-32
16
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Current
Mirrors
Neamen
McGraw-Hill
Chapter 3-33
2-Stage Cascade Amplifier

Source follower
Common-source
Neamen
McGraw-Hill
Chapter 3-34
17
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NMOS Cascode Circuit
Neamen
McGraw-Hill
Chapter 3-35
Cross Section of n-Channel Junction

Field Effect Transistor (JFET)
Neamen
McGraw-Hill
Chapter 3-36
18
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Cross Section of n-Channel MESFET
Neamen
McGraw-Hill
Chapter 3-37
19

Chapter 3

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26/1/2012

Circuit Analysis and Design

In this chapter, we will:

Basic Structure of MOS Capacitor

MOS Capacitor Under Bias:

Negative gate bias:

Positive gate bias:

Holes attracted to gate

Electrons attracted to gate

Basic Transistor Operation

Basic Transistor Operation

Current Versus Voltage Characteristics:

Family of iD Versus vDS Curves:

Symbols for n-Channel

Symbols for p-Channel

n-Channel Depletion-Mode MOSFET

Family of iD Versus vDS Curves:

p-Channel DepletionMode MOSFET

Cross-Section of nMOSFET and pMOSFET

Both transistors are used in the fabrication of CMOS circuitry.

Summary of I-V Relationships

vDS(sat) = vGS - VTN

vSD(sat) = vSG + VTN

Channel Length Modulation:

NMOS Common-Source Circuit

PMOS Common-Source Circuit

Load Line and Modes of Operation:

Enhancement Load Device

Circuit with Enhancement Load

Voltage Transfer Characteristics:

NMOS Inverter with Enhancement Load Device

NMOS Inverter with

2-Input NMOS NOR Logic Gate

MOS Small-Signal Amplifier

2-Stage Cascade Amplifier

NMOS Cascode Circuit

Cross Section of n-Channel Junction

Cross Section of n-Channel MESFET

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