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1, ianuarie-martie 2013
61
1. Introduction
Capacitive coupling: The time varying
electrical field of an external system
produced time varying charges in the
disturbed system. The flow of the
displacement currents can be modeled in an
equivalent circuit by stray capacitances,
which connect the two systems, and cause
the disturbing voltages
Similar to the cause of inductive coupling,
the capacitive coupling becomes large if:
The two circuits are close together
The voltages difference of the two
circuits is large
The signals in the external circuit are
rapidly varying in the time and
therefore possess large high frequency
content.
C 11 =
0 l
a
+ r
2 2
(1)
25
(2)
C 13 = 0 , 26 0 l
(3)
(4)
(5)
C 21 =
0 a
d1
(6)
= U1
C1
(C 1 + C 2 )
15
10
0
2
10
15
distancea[mm]
C 21 C 22
C 21 + C 22
20
C 2a =
35
30
l h
= 0
a
C 12
conductor 2.
In figure 3, there is presented the electric
potential of the conductor 1, in function of
the distance. We observed that the values
of the electric potential are larger than a
double-layer PCB.
U2[V]
62
(7)
Comsol simulations
With the Electrostatics model from
Comsol Multiphysics, I studied capacitive
coupling at the surface of a PCB. The
distance between C1 and C2 conductors is a
(mm).
In the figure bellow, there is presented
the electric potential and stream lines of the
electric field in the case when the distance
between conductors is 15mm.
63
3. Conclusions
U2
Experimental
[V]
5,98
4,95
4,60
3,39
0,70
U2
Simulated
[V]
4,53
3,82
2,86
2,61
0,58
64
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Application, Note AN-348.
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integrated capacitive coupling elements in
Fraunhofer IISB, Germany 2010.
[9] Powel S., Thalhein J., Getting into shape,
high frequency gate drive module features
ultra flat design, in Bodo's Power Magazine,
Nov. 2008, ISSN 1868-5598.
[10] Hernwile M., Driver Core goes Fully Digital
in Bodo's Power Magazine, May 2008 ISSN
1868-5598
[11] Vasic
D.,
Costa
F.,
Sarraute
E.,
'Piezoelectric transformer for integrated
MOSFET and IGBT gate driver in IEEE
Transaction on Power Electronics, Vol. 21,
No 1, January 2006
[12]Kim J., Choi J.-H., Kim C.-H., Chang M.F.,
Werbauwhede I., A low power capacitive
coupled bus interface based on pulsed
signals, University of California, Los Angeles.
[13]Gabara T.J., Fischer W.C., Capacitive
coupling and quantized feedback applied to
conventional CMOS technology, in IEEE
J.Solid-State Circuits, pp.419-427, March
1997.
[14]Mick S. et al., 4 Gbps high-density AC
coupled interconnection, in IEEE Custom
Integrated Circuits Conference, pp.133-140,
May, 2002.
[15]Drost R.J. et al., Proximity Communication,
in IEEE Custom Integrated Circuits
Conference, pp.469-472, Sept. 2003.
[16]Kanda K., Antono D., Ishida K., Kawaguchi
H., T. Kuroda, Sakurai T., 1.27Gb/s/pin
3mW/pin wireless superconnect (WSC)
interface scheme, in ISSCC Digest of
Technical Papers, pp.186-187, Feb., 2003.
[17] Zerbe J.L. et al., 1.6 Gb/s/pin 4-PAM
Signaling and Circuits for a Multidrop Bus,
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2001.
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bus structures, Design and Test of
6. Biography
Alina-Elena DUMITRU (RADU)
was born in Roiori de Vede
(Romnia), on May, 18, 1986.
She received his M. Sc. In
Electrical
Engineering
at
Politehnica
University
of
Bucharest, from Bucharest,
Romania in 2011. She is currently a Ph.D.
Student in Politehnica University of Bucharest,
from Bucharest, Romania.
Shes special fields of interest included
Electromagnetic compatibility, electromagnetic
perturbations and interference systems.