DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

PACKAGE DIMENSIONS

DESCRIPTION

(in millimeter)

This product is P-Channel MOS Field Effect Transistor

designed for high current switching applications.

4.50.2

10.00.3

3.20.2

30.1
40.2

Super Low On-State Resistance

RDS(on)1 = 50 m: Max. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 88 m: Max. (VGS = 4 V, ID = 10 A)
Low Ciss

12.00.2

FEATURES

13.5 MIN.

15.00.3

2.70.2

Ciss = 2360 pF Typ.

Built-in Gate Protection Diode

0.70.1
2.54

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage

VDSS

Gate to Source Voltage*

VGSS (AC)

Gate to Source Voltage

VGSS (DC)

Drain Current (DC)

ID (DC)

Drain Current (pulse)**

ID (pulse)

1.30.2
1.50.2
2.54

60

+20

20, 0

+20

+80

1. Gate
2. Drain
3. Source

V
A

Total Power Dissipation (TC = 25 C)

PT

35

Total Power Dissipation (TA = 25 C)

PT

2.0

Channel Temperature

Tch

150

Storage Temperature

Tstg

55 to +150

2.50.1
0.650.1

1 2 3

ISOLATED TO-220 (MP-45F)

Drain

Body
Diode

Gate

* f = 20 kHz, Duty Cycle d 10% (+Side)

** PW d 10 Ps, Duty Cycle d 1%

Gate Protection
Diode
Source

THERMAL RESISTANCE
Channel to Case

Rth (ch-C)

3.57 C/W

Channel to Ambient

Rth (ch-A)

62.5 C/W

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.

Document No. D11266EJ2V0DS00 (2nd edition)

Date Published January 1998 N CP(K)
Printed in Japan

1998

2SJ494
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS

SYMBOL

Drain to Source On-state Resistance

TEST CONDITIONS

MIN.

MAX.

UNIT

RDS(on)1

VGS = 10 V, ID = 10 A

39

50

m:

RDS(on)2

VGS = 4 V, ID = 10 A

61

88

m:

Gate to Source Cutoff Voltage

VGS (off)

VDS = 10 V, ID = 1 mA

1.0

1.5

2.0

Forward Transfer Admittance

| yfs |

VDS = 10 V, ID = 10 A

8.0

15

Drain Leakage Current

IDSS

VDS = 60 V, VGS = 0

10

PA

Gate to Source Leakage Current

IGSS

VGS = +20 V, VDS = 0

+10

PA

Input Capacitance

Ciss

VDS = 10 V

2360

pF

Output Capacitance

Coss

VGS = 0

1060

pF

350

pF

f = 1 MHz

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

ID = 10 A

25

ns

tr

VGS(on) = 10 V

160

ns

310

ns

240

ns

ID = 20 A

74

nC

VDD = 48 V

12

nC

16

nC

Rise Time
Turn-Off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

Gate to Source Charge

QGS

VDD = 30 V
RG = 10 :

VGS = 10 V

Gate to Drain Charge

QGD

Body Diode Forward Voltage

VF(S-D)

IF = 20 A, VGS = 0

1.0

Reverse Recovery Time

trr

IF = 20 A, VGS = 0

130

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/Ps

290

nC

Test Circuit 1 Switching Time

RL
PG.

RG
RG = 10

D.U.T.
IG = 2 mA

VGS
VGS

10 %

Wave Form

VGS (on)

PG.
90 %
90 %
ID

D
Wave Form

t
t = 1 s
Duty Cycle 1 %

10 %

10 %
td (on)

tr
ton

RL

90 %

VDD
ID

VGS
0

1.5

Test Circuit 2 Gate Charge

D.U.T.

TYP.

td (off)

tf
toff

50

VDD

2SJ494

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE
PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

35
100
80
60
40
20

20

40

60

80

30
25
20
15
10
5
0

100 120 140 160

20

40

60

80

100 120 140 160

TC - Case Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

1000
Pulsed
ID - Drain Current - A

50

0
s

ID(pulse)

100

30

ID(DC)

10

Po

10

d
ite
)
im
)L 0V
on =1
(
S
S
RD t VG
(a

ID - Drain Current - A

100

10

we

rD

iss

ipa

tio

Tc = 25 C
Single Pulse

1
0.1

ite

VGS= 10 V

60
40
VGS = 4 V
20

DC

Lim

80

10

100

VDS - Drain to Source Voltage - V

12

16

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

ID - Drain Current - A

1 000

Pulsed
Tch = 25 C
25 C
125 C

100

10

10

VDS = 10 V
15

VGS - Gate to Source Voltage - V

2SJ494

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - C/W

1 000

Rth(ch-a) = 62.5 C/W

100

10
Rth(ch-c) = 3.57 C/W
1

0.1

0.01
Single Pulse
0.001
10

100

1m

10 m

100 m

10

100

1 000

100

10

VDS = 10 V
Pulsed
Tch = 25 C
25 C
75 C
125 C

0.1
0.1

10

1.0

100

RDS(on) - Drain to Source On-State Resistance - m

ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed

150

100

VGS = 4 V
VGS = 10 V
50

10
ID - Drain Current - A

100

VGS(off) - Gate to Source Cutoff Voltage - V

| yfs | - Forward Transfer Admittance - S

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

RDS(on) - Drain to Source On-State Resistance - m

PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
Pulsed

100
ID = 20 A

50

10

20

VGS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA

2.0

1.5

1.0

0.5

0
50

50

100

150

Tch - Channel Temperature - C

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Pulsed
160

ISD - Diode Forward Current - A

100

120

80

VGS = 4 V

40

VGS = 10 V

VGS = 4 V
10
VGS = 0
1

0.1

ID = 10 A

0
50

50

100

150

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

VGS = 0
f = 1 MHz
Ciss

1 000

Coss
Crss

100

10
0.1

10

100

td(off)
tf
100
tr
10

100

10

10

IF - Diode Current - A

100

VDS - Drain to Source Voltage - V

di/dt = 50 A/ s
VGS = 0

VDD = 30 V
VGS = 10 V
RG = 10
10
100

ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

1
0.1

td(on)

1
0.1

VDS - Drain to Source Voltage - V

1000

3.0

2.0

1 000
td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

10 000

trr - Reverse Recovery Time - ns

1.0

VSD - Source to Drain Voltage - V

Tch - Channel Temperature - C

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80
ID = 20 A
14
VGS
60
12

40

10

VDD = 48 V
24 V
12 V

8
6
4

20

2
VDS
0

20

40

60

80

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-State Resistance - m

2SJ494

QG - Gate Charge - nC

2SJ494

Document Name

Document No.

NEC semiconductor device reliability/quality control system

C11745E

Power MOS FET features and application to switching power supply

D12971E

Application circuits using Power MOS FET

TEA-1035

Safe operating area of Power MOS FET

TEA-1037

Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS)

C11892E

2SJ494
[MEMO]

2SJ494

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Anti-radioactive design is not implemented in this product.
M4 96. 5

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