FGA25N120AN

General Description

Features

Employing NPT technology, Fairchilds AN series of IGBTs

provides low conduction and switching losses. The AN
series offers an solution for application such as induction
heating (IH), motor control, general purpose inverters and
uninterruptible power supplies (UPS).

High speed switching

Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A
High input impedance

Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.

G
E

TO-3P
G C E

Absolute Maximum Ratings

Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL

TC = 25C unless otherwise noted

Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8 from case for 5 seconds

@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C

FGA25N120AN
1200
20
40
25
75
310
125
-55 to +150
-55 to +150

Units
V
V
A
A
A
W
W
C
C

300

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol
RJC
RJA

Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient

2004 Fairchild Semiconductor Corporation

Typ.
---

Max.
0.4
40

Units
C/W
C/W

FGA25N120AN Rev. A

FGA25N120AN

IGBT

Symbol

Parameter

= 25C unless otherwise noted

Test Conditions

Min.

Typ.

Max.

Units

VGE = 0V, IC = 3mA

1200

--

--

VGE = 0V, IC = 3mA

--

0.6

--

V/C

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

---

---

3
100

mA
nA

3.5
--

5.5
2.5

7.5
3.2

V
V

--

2.9

--

--

3.1

--

----

2100
180
90

----

pF
pF
pF

-------------------

60
60
170
45
4.8
1.0
5.7
60
60
180
70
5.5
1.4
6.9
200
15
105
14

---90
7.2
1.5
8.7
-------300
23
160
--

ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH

Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES

Collector-Emitter Breakdown Voltage

Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current

On Characteristics
VGE(th)

G-E Threshold Voltage

VCE(sat)

Collector to Emitter
Saturation Voltage

IC = 25mA, VCE = VGE

IC = 25A, VGE = 15V
IC = 25A, VGE = 15V,
TC = 125C
IC = 40A, VGE = 15V

Dynamic Characteristics
Cies
Coes
Cres

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

VCE = 30V, VGE = 0V,

f = 1MHz

Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le

Turn-On Delay Time

Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance

2004 Fairchild Semiconductor Corporation

VCC = 600 V, IC = 25A,

RG = 10, VGE = 15V,
Inductive Load, TC = 25C

VCC = 600 V, IC = 25A,

RG = 10, VGE = 15V,
Inductive Load, TC = 125C

VCE = 600 V, IC = 25A,

VGE = 15V
Measured 5mm from PKG

FGA25N120AN Rev. A

FGA25N120AN

Electrical Characteristics of the IGBT T

TC = 25

20V
17V
15V

160

12V

Common Emitter
VGE = 15V
TC = 25
TC = 125

100

Collector Current, IC [A]

140

Collector Current, IC [A]

FGA25N120AN

120

180

120
100
VGE = 10V
80
60
40

80

60

40

20
20
0

0
0

10

Fig 1. Typical Output Characteristics

50
Common Emitter
VGE = 15V

Vcc = 600V
load Current : peak of square wave

40A

40
3.5

3.0

Load Current [A]

Collector-Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage Characteristics

4.0

IC = 25A

30

20

2.5

10
Duty cycle : 50%
Tc = 100
Powe Dissipation = 60W
2.0

0
25

50

75

100

125

0.1

10

Case Temperature, T C []

100

1000

Frequency [kHz]

Fig 3. Saturation Voltage vs. Case

Temperature at Variant Current Level

Fig 4. Load Current vs. Frequency

20

20
Common Emitter
TC = 125

Collector-Emitter Voltage, VCE [V]

Common Emitter
TC = 25

Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

16

12

40A

25A

16

12

40A
4

25A
IC = 12.5A

IC = 12.5A
0

0
0

12

16

20

12

Gate-Emitter Voltage, VGE [V]

Gate-Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. VGE

Fig 6. Saturation Voltage vs. VGE

2004 Fairchild Semiconductor Corporation

16

20

FGA25N120AN Rev. A

FGA25N120AN

4000
Common Emitter
V GE = 0V, f = 1MHz
T C = 25

3500

100

Switching Time [ns]

Capacitance [pF]

3000
Ciss

2500
2000
1500

Coss
1000

tr

td(on)

Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25
TC = 125

Crss
500
10

0
1

10

10

20

Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25
TC = 125

50

60

Common Emitter
V CC = 600V, VGE = 15V
IC = 25A
T C = 25
T C = 125

td(off)
10

Switching Loss [mJ]

Switching Time [ns]

40

70

Fig 8. Turn-On Characteristics vs. Gate

Resistance

Fig 7. Capacitance Characteristics

1000

30

Gate Resistance, RG []

Collector-Emitter Voltage, VCE [V]

100
tf

Eon

Eoff

10
0

10

20

30

40

50

60

70

10

20

Gate Resistance, RG []

Fig 9. Turn-Off Characteristics vs.

Gate Resistance

Switching Time [ns]

Switching Time [ns]

100

td(on)

30

40

Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs.

Collector Current
2004 Fairchild Semiconductor Corporation

50

60

Common Emitter
VGE = 15V, RG = 10
TC = 25
TC = 125
tr

20

40

70

Fig 10. Switching Loss vs. Gate Resistance

Common Emitter
VGE = 15V, RG = 10
TC = 25
TC = 125

10

30

Gate Resistance, R G []

50

td(off)

100
tf

10

20

30

40

50

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs.

Collector Current
FGA25N120AN Rev. A

FGA25N120AN

16
Common Emitter
VGE = 15V, RG = 10
TC = 25
TC = 125

Gate-Emitter Voltage, VGE [V]

Switching Loss [mJ]

10

Common Emitter
RL = 24
TC = 25

14
Eon

Eoff
1

0.1

12
600V
10
400V
8
Vcc = 200V

6
4
2
0

10

20

30

40

50

20

Collector Current, IC [A]

40

60

80

100

120

140

160

180

200

Gate Charge, Q g [nC]

Fig 14. Gate Charge Characteristics

Fig 13. Switching Loss vs. Collector Current

100
Ic MAX (Pulsed)

100

50s
100 s

Collector Current, IC [A]

Collector Current, Ic [A]

Ic MAX (Continuous)
10
1ms
DC Operation
1

Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature

0.1

0.01

10

Safe Operating Area

VGE = 15V, TC = 125

1
0.1

10

100

1000

10

Collector - Emitter Voltage, V CE [V]

100

1000

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA

Thermal Response [Zthjc]

10

1
0.5
0.1

0.2
0.1
0.05

0.01

Pdm
Pdm

0.02

t1
t1
t2
t2

0.01
single pulse
1E-3
1E-5

1E-4

Duty
Dutyfactor
factorD
D==t1
t1// t2
t2
Peak
PeakTj
Tj==Pdm
PdmZthjc
Zthjc++TTCC

1E-3

0.01

0.1

10

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

2004 Fairchild Semiconductor Corporation

FGA25N120AN Rev. A

FGA25N120AN

Package Dimension

TO-3P (FS PKG CODE)

15.60 0.20

3.00 0.20

3.80 0.20

+0.15

1.00 0.20

18.70 0.20

23.40 0.20

19.90 0.20

1.50 0.05

16.50 0.30

2.00 0.20

9.60 0.20

4.80 0.20

3.50 0.20

13.90 0.20

3.20 0.10

12.76 0.20

13.60 0.20

1.40 0.20

+0.15

5.45TYP
[5.45 0.30]

5.45TYP
[5.45 0.30]

0.60 0.05

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation

FGA25N120AN Rev. A

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2004 Fairchild Semiconductor Corporation

Rev. I6