You are on page 1of 46

15ELEC17H

VLSI Technology
Fall 2015
Lecture 01: Introduction
Dr. Hassan Mostafa
.
Hassan.mostafa@bue.edu.eg
[Adapted from Rabaeys Digital Integrated Circuits, 2002, J. Rabaey et al.]

VLSI Technology

BUE

Module Outline

Module objectives

Ability to design and implement CMOS digital circuits and optimize them
with respect to different constraints: size (cost), speed, power
dissipation, and reliability

VLSI Technology

BUE

Module contents
Introduction
CMOS

Processing

Circuits/Layouts
CMOS

Inverter/ Combinational Gates

Dynamic/Pass
Sequential
Memory

VLSI Technology

Transistors Design

Design

arrays
3

BUE

Module Outline

Instructor:

Dr. Hassan Mostafa


Hassan.mostafa@bue.edu.eg

Office : E (Extension) Room # 9

Textbook:

Course Websire

Digital Integrated Circuits, 2nd Edition, Rabaey et. al., 2002

BUE University El-learning

Grading:

10%: In-class test


30%: Course Project
60%: Final Examination

VLSI Technology

BUE

Semiconductor devices
Semiconductor devices are electronic devices that are fabricated
using semiconductor materials such as Silicon, Germanium, and
Gallium Arsenide.
Semiconductor devices are available as discrete components (available
on shelf in electronics stores)
or can be integrated with a large number of similar devices onto a single
chip, called an Integrated Circuit(IC).

VLSI Technology

BUE

Complementary Metal Oxide Semiconductor (CMOS)


CMOS is a technology for constructing ICs. This technology
is used in microprocessors, microcontrollers, Memories, and other

digital logic circuits.


Microprocessor

Microcontroller

RAM
VLSI Technology

BUE

Information age

The ability to fabricate billions of


individual components (transistors,
resistors, capacitors, etc.) on a silicon
chip with an area of a few cm2 has
enabled the information age.

Shrinking geometries permit more


devices to be placed in a given are of
silicon.

It is widely expected that these historical


trends will continue for at least another 510 years, resulting in Chips that contain
tens of billions of components.

VLSI Technology

BUE

First Transistor from Bell Labs (1947)

VLSI Technology

BUE

Kilby first IC (1958)

VLSI Technology

BUE

First monolithic integrated circuit

1961
Picture shows a flipflop circuit containing
6 devices, produced in
planar technology.
Source:
R. N. Neyce, Semiconductor
device-and-lead structure,
U.S.Patent 2,981,877

VLSI Technology

10

BUE

first microprocessor

1971
Picture shows a
four-bit microprocessor
Intel 4004.

10 m technology

3 mm 4 mm

2300 MOS-FETs

108 kHz clock frequency


Source:
Intel Corporation

VLSI Technology

11

BUE

Pentium IV processor

2001
Picture shows a ULSI
chip with 32-bit processor
Intel Pentium 4.
0.18m CMOS technology
17.5 mm 19 mm
42 000 000 components
1.6 GHz clock freuqncy
Source:
Intel Corporation

VLSI Technology

12

BUE

Moores Law

In 1965, Gordon Moore predicted that the number of


transistors that can be integrated on a die would double
every 18 to 14 months (i.e., grow exponentially with
time).

Amazingly visionary million transistor/chip barrier was


crossed in the 1980s.

2300 transistors, 1 MHz clock (Intel 4004) - 1971


16 Million transistors (Ultra Sparc III)
42 Million, 2 GHz clock (Intel P4) - 2001

Xilinx currently holds the "world-record" for an


FPGA chip containing more than 20 billion
transistors

VLSI Technology

13

BUE

Moores Law in Microprocessors


Transistors on microprocessors double every 2 years
1 Billion
Transistors

K
1,000,000
100,000

Pentium III
Pentium II
Pentium Pro
Pentium
i486
i386
80286

10,000
1,000
100
10

8086
Source: Intel

1
1975 1980 1985 1990 1995 2000 2005 2010
Projected

VLSI Technology

Courtesy, Intel
14

BUE

Moores law scaling

VLSI Technology

15

BUE

Moore and CMOS Scaling

CMOS scaling will not stay forever, but, forever can be delayed
Moore, 2003
VLSI Technology

16

BUE

Clean Rooms
Clean room facility:
Particle free walls, furniture, and accessories must be used
Airflow through 0.3 microns filters

VLSI Technology

17

BUE

Clean Rooms
Clean room facility:
Main function of clean rooms is control of particle
contamination
Requires control of air flow, water and chemical filtrations,
human protocol
Class N clean room means fewer than N particles (>0.5 m) in
1 cubic foot of air
Classes types:
Class 10,000
Class 1,000
Class 100
Class 10

VLSI Technology

18

BUE

Clean Rooms
Clean room facility:

Class 10,000

VLSI Technology

Class 100

Class 1,000

19

Class 10

BUE

Electronics Design Flow

Design the circuit using electronic components

Simulate your circuit using Spice

Adjust the circuit till the simulation results are correct

Draw your layout

Simulate your layout (with parasitic) using Spice

Adjust the circuit/layout till the simulation results are


correct

Send your design for tape-out

Test your chip If not working Repeat

If working

VLSI Technology

20

BUE

Design Abstraction Levels


System specs, e.g.
design a divider that
works at a given rate,
etc.

SYSTEM

MODULE
+
GATE
CIRCUIT
DEVICE
S
n+

D
n+

Should work at as high a


level as you possibly
can. In this course we

A logic level
description
Describing the circuit
in terms of device
and element
connections
Considering the
physics of the
individual devices on
chip

focus on circuit and

module levels
VLSI Technology

Architectural
description using
macro blocks

21

BUE

Intutively:

Digital integrated circuits experience exponential


growth in complexity (Moores law) and performance

Design in the Deep SubMicron (DSM) era creates new


challenges

Devices become somewhat different


Global clocking becomes more challenging
Interconnect effects play a more significant role
Power dissipation may be the limiting factor

Our goal in this class will be to understand and design


digital integrated circuits in the deep submicron era

Now, we look at some basic design metrics and


definitions

VLSI Technology

22

BUE

Introduce your self:


A random student should be asked to stand in front of the class and present
her/him self in 3 minutes. His classmates should evaluate his presentation
and give him comments right after the presentation

Student sitting on the left side, in the last row, number 1 from the wall.

VLSI Technology

23

BUE

Fundamental Design Metrics

Functionality

Cost

NRE (fixed) costs - design effort


RE (variable) costs - cost of parts, assembly, test

Time-to-market

VLSI Technology

24

BUE

Cost of Integrated Circuits

NRE (non-recurring engineering) costs

Fixed cost to produce the design


- design effort
- design verification effort
- mask generation

Influenced by the design complexity and designer productivity


More pronounced for small volume products

Recurring costs proportional to product volume

silicon processing
- also proportional to chip area

assembly (packaging)
test
fixed cost
cost per IC = variable cost per IC + ----------------volume

VLSI Technology

25

BUE

NRE Cost is Increasing

VLSI Technology

26

BUE

Silicon Wafer
Single die

Wafer

From http://www.amd.com

VLSI Technology

27

BUE

Recurring Costs
cost of die

cost of wafer
= ----------------------------------dies per wafer die yield

number of functioning dies


die yield = -------------------------------------------total number of dies
Which of the following wafers have higher yield?

VLSI Technology

28

BUE

What is?

Electric field

Mobility

Resistance

Capacitance

VLSI Technology

29

BUE

Electric field (x)

An area around a charged body where it exerts a force


on other charged particles

E is often a complex vector function of the charge and


geometry of the charged body as well as the geometry
and materials around it

Remember one case well though, the electric field on a


straight line between two nodes at a certain potential
difference is:

V
E
L
VLSI Technology

30

BUE

Mobility (m)

It is easier for electrons in CB to move than for all the


electrons in the VB to displace a hole

This ease is assigned the term mobility

Mobility has a certain mathematical definition as the ratio of


velocity to electric field

This is an undergrad concept, mobility is the derivative of


speed with electric field

Note also that we will never assume double electron to


hole mobility in this course

The curve indicates mobility is variable, leading to


interesting results to be shown later

VLSI Technology

31

BUE

Resistance (R)

How much the body resists the flow of steady current

Function of the geometry and the material

The material part is called conductivity s (inverse


resistivity r)

In terms of geometry larger cross-section and shorter


length reduce resistance

L
rL
R

sA A
VLSI Technology

32

BUE

Capacitance

Capacitance is the ability of a body or structure to hold


charge stored at a certain potential

The parallel plate capacitor is the most important model


for this course

r 0A

d
C Q /V
VLSI Technology

33

BUE

How a processor is made today?

VLSI Technology

34

BUE

VLSI Technology

35

BUE

Sand
1- Sand. Made up of 25 percent silicon, is, after oxygen, the second most chemical
element thats in the earths crust. Sand has high percentages of silicon in the form
of silicon dioxide (SiO2)

VLSI Technology

36

BUE

Silicon
2-After separating the silicon, it is purified in multiple steps to finally reach S.C.
manufacturing quality which is called electronic grade silicon . The
resulting purity is so great that it may only have one alien atom for every one
billion silicon atoms.

VLSI Technology

37

BUE

Silicon Wafer fabrication


3-After the purification process, the silicon enters the melting phase.

A monocrystal ingot is produced from electronic grade silicon. One ingot weighs
approximately 100 kilograms and has a silicon purity of 99.9999
percent.

VLSI Technology

38

BUE

Single Crystal Silicon Wafer


4-The ingot is then moved onto the slicing phase where individual silicon discs, called
wafers, are sliced thin. Several different diameters of ingots exist depending on
the required wafer size. Today, CPUs are commonly made on 300 mm wafers.
Once cut, the wafers are polished until they have flawless, mirror-smooth
surfaces.

VLSI Technology

39

BUE

Lithography
5-The blue liquid is a photo resist finish similar to those used in film for

photography. The wafer spins during this step to allow an evenly-distributed


coating thats smooth and also very thin. At this stage, the photo-resistant
finish is exposed to ultra violet (UV) light.

VLSI Technology

40

BUE

etching
6-The exposure is done using masks that act like stencils. When used with UV
light, masks create the various circuit patterns. This process over and over
until multiple layers are stacked on top of each other.

VLSI Technology

41

BUE

Doping (ion implantation)


7- Through a process called ion implantation (doping) the exposed areas of the
silicon wafer are bombarded with ions. Ions are implanted in the silicon wafer to
alter the way silicon in these areas conduct electricity. Ions are propelled onto
the surface of the wafer at very high velocities.

VLSI Technology

42

BUE

How a Processor is made ?


8- The wafers are put into a copper sulphate solution at this stage. Copper ions are
deposited onto the transistor through a process called electroplating.

VLSI Technology

43

BUE

How a Processor is made ?


9-The copper ions settle as a thin layer on the wafer surface. The excess material
is polished off leaving a very thin layer of copper. Multiple metal layers are
created to interconnects (think wires) in between the various transistors.

VLSI Technology

44

BUE

How a Processor is made ?


10-This fraction of a ready wafer is being put through a first functionality test. In
this stage test patterns are fed into every single chip and the response from
the chip monitored and compared to the right answer.

VLSI Technology

45

BUE

How a Processor is made ?


11-The dies that responded with the right answer to the test pattern will be put
forward for the next step (packaging).

VLSI Technology

46

BUE

You might also like