Professional Documents
Culture Documents
Final Examination
2014/ 2015
Module Title
Introduction to Electrical Materials
Module Leader
Prof. Abdel-Hamid A. Hussein
Equipment allowed
Non-programmable calculator
Semester
One
Instructions to Students
Answer SECTION B and any TWO QUESTIONS from SECTION A.
Answers to only two questions from SECTION A will be graded. If answers to
more than two questions are found, the first two answers will be graded and
the other answers will be ignored.
The exam paper is FIVE PAGES long, not including this page
The allocation of marks is shown in brackets next to each question.
All questions carry equal marks.
Write your answers in the answer book provided, not on the exam papers.
This examination is TWO hours long.
13MECH61C
[5 marks]
b) If the original light intensity is reduced 6.5% after being transmitted 300 m through an
optical fiber, what is the attenuation of the light in decibels per kilometer (dB/km) for
this type of optical fiber?
[4 Marks]
[5 Marks]
d) Describe the flow of electrons and holes when an npn bipolar junction transistor
functions as a current amplifier.
[5 Marks]
e) Calculate the critical magnetic fields for lead at 5.0 K. For lead TC=7.19 K and
BC(0)=0.0803 tesla. To what temperature must lead be cooled in a magnetic field of
15,000 A/m for it to be superconductive?
[6 Marks]
[Total 25 marks]
Q (2)
a. 1. An x-ray diffractometer recorder chart for an element that has either the BCC or the FCC crystal
structure showed diffraction peaks at the following 2 angles:
41.069, 47.782, 69.879, and 84.396. (The wavelength of the incoming radiation was 0.15405 nm.)
(i) Determine the crystal structure of the element.
(ii) Determine the lattice constant of the element.
(iii) Identify the element.
The lattice parameter of some elements (nm):
Al (0.40496) Cu (0.36147) Fe (0.28664) Rhodium Rh (0.38044).
[5 marks]
13MECH61C
[5 marks]
d. Calculate a theoretical value for the saturation magnetization and saturation induction for
nickel, assuming all unpaired 3d (2) electrons contribute to the magnetization. (Ni is FCC and
a = 0.352 nm).
[5 marks]
e) Describe the operation of the ruby laser.
[5 marks]
[Total 25 marks]
Q (3)
a. The diffusivity of copper atoms in aluminium lattice is 7.50x10-13 m2/s at 600oC and
2.5x10-15 m2/s at 400oC. Calculate the activation energy for this case in this temperature
range. [R=8.314 J/(mol.K].
[5 marks]
b. Calculate the electrical resistivity of germanium at 300 K. The number of conduction
electrons is 2.4x1019/m3, the electron and hole mobilities are 0.39 and 0.19 m2/V.s
respectively.
[5 marks]
c. Describe the origin of the three stages that appear in the plot of ln versus 1/T for an
extrinsic silicon semiconductor (going from low to high temperatures). Why does the
conductivity decrease just before the rapid increase due to intrinsic conductivity? [5 marks]
d. Describe the movement of majority carriers in a pn junction diode at equilibrium. What is
the depletion region of a pn junction? Describe the movement of the majority and minority
carriers in a pn junction diode under reverse bias.
[5 marks]
e. Why does the addition of 3 to 4 percent silicon to iron reduce transformer-core energy
losses?
What disadvantages are there to the addition of silicon to iron for transformer-core
materials?
Why does a laminated structure increase the electrical efficiency of a power transformer?[5 marks]
2
[Total 25 marks]
13MECH61C
[5 marks]
b. Using the data in the following table, predict the relative degree of solid solubility of
the elements, copper, magnesium and zinc in aluminium
[5 marks]
[5 marks]
d. One integrated circuit design calls for diffusion of boron into high purity silicon at an
elevated temperature. It is necessary that at a distance 0.2 m from the surface of the Si
wafer, the room temperature electrical conductivity be 1000 (m)-1. The concentration
of B at the surface of the Si is maintained at a constant level of 1.0x1025
m-3
!"!!"/!"#
!"
and
the
hole
mobility
is ! =0.024
D(m2/s)
m2/V.s.
[10 marks]
[Total 25 marks]
Q (5)
a. Calculate the drift velocity of electrons in silicon at room temperature and when the
magnitude of the electric field is 500 V/m. Under these circumstances how long does it
take an electron to traverse a 25 mm length of crystal? The room temperature mobility
of electrons is 0.14 m2/V.s.
3
[ 5 marks]
13MECH61C
b. Calculate the number of electrons per cubic meter for silver, assuming that there are 1.3 free
electrons per silver atom. The electrical conductivity and density for silver are 6.8x107 (m)-1
and 10.5 g/cm3 respectively. Compute the electron mobility for silver. The atomic weight of Ag
[5 marks]
is 107.87.
-1
, whereas the
electron and hole mobilities are 0.06 and 0.02 m2/V.s. respectively. Compute the
intrinsic carrier concentration for PbS at room temperature.
[4 marks]
d. The following electrical characteristics have been determined for both intrinsic and ptype extrinsic gallium antimonide (GaSb) at room temperature:
(m)-1
Intrinsic
nn m-3
npm-3
7.6x1022 1.0x1025
[6 marks]
e. Compute the saturation magnetization and the saturation flux density for iron, which
has a net magnetic moment per atom of 2.2 Bohr magnetons and a density of 7.87
g/cm3. Atomic weight of iron=55.85.
[5 marks]
13MECH61C
erfz
0
0.0282
0.0564
0.1125
0.1680
0.2227
0.2763
0.3286
0.3794
z
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
erfz
0.4284
0.4755
0.5205
0.5633
0.6039
0.6420
0.6778
0.7112
0.7421
z
0.85
0.90
0.95
1.0
1.1
1.2
1.3
1.4
1.5
erfz
0.7707
0.7970
0.8209
0.8427
0.8802
0.9103
0.9340
0.9523
0.9661
z
1.6
1.7
1.8
1.9
2.0
2.2
2.4
2.6
2.8
erfz
0.9763
0.9838
0.9891
0.9928
0.9953
0.9981
0.9993
0.9998
0.9999
Q (1)
a) No. of atoms per m3 = 4/(0.36147x10-9)3 = 8.47x1028 atoms/m3
Concentration of vacancies = (1.2x1023)/(8.47x1028) = 1.4x10-5
Ev ev
n/N = exp[
] = 1.4x10-5
5
(8.62 x10 ev / K )(773)
Ev = 0.90 eV
b)
Attenuation (dB/km) =
(1 0.065) I o
10
log
0.300
Io
10
I
=
log
l
Io
Cx = 1017 atoms/cm3
Co = 0.0
C s C x 1018 1017
x
=
=
erf
C s Co
1018 0
2 (4.0 x10 13 )(1.80 x10 4 )
x
0.90 = erf
4
1.697 x10
from table:
x
= 1.166
1.697 x10 4
x = 1.98 x 10-4 cm
d) When an npn bipolar junction transistor functions as a current amplifier, the large majority
of electrons, 95 to 99 percent, flow from the emitter through the base and into the collector.
The remaining electrons recombine with the holes that flow from the collector to the base.
Very few holes flow into the emitter.
e) ! 0 =
!! (!)
!!
! = ! 0
!.!"!#
= !.!"#!!"!! = 6.3910! /
1
!
!!
! 2.5 = 6.3910! 1
2.5!
= 5.610! /
7.19!
= ! 1
!
! 0
= 7.19
15,000
= 6.29
63,900
Q (2)
a.
2
41.069
47.782
20.535
23.891
Sin
0.35077
0.40499
Sin2
0.12304
0.16402
sin 2 1 0.12304
=
= 0.75 FCC
sin 2 2 0.16402
(3 marks)
a=
h2 + k 2 + l 2
0.15405 1 + 1 + 1
=
= 0.38034 (2 marks)
2
2
2
0.12304
sin 1
C s C x 1018 1015
10 4
=
=
erf
C s Co
1018 0
2 (3.0 x10 13 ) xt
91.287
0.999 = erf
(3 marks)
t
91.287
From table:
= 2.35
t
91.287
t =
= 1508 s = 25.1 min (2 marks)
2.35
c)
2
c)
(i) nn =
1
1
=
= 6.17 x1018 electrons / cm 3
4
19
4
q n (7.5 x10 )(1.60 x10 )(0.1350) x10
N o
at .wt.
4 atoms/unit cell
(2)(9.27 x10 4 ) = 1.70 x10 6 A/m
10 3
(3.52 x10 )
e) The ruby laser contains a single crystal of aluminum oxide (Al2O3) that has Cr+3 ions
occupying the substitutional lattice sites. These ions are responsible for the pink color and act
as fluorescent centers when excited by a Xenon flash lamp encircling the crystal. Upon
returning to the ground state or a metastable state, the ions emit photons at specific
wavelengths which are reflected by a mirror, at the rear of the crystal, and partially
transmitted by a second mirror, located in front of the crystal. The radiation which passes
through the front mirror is a coherent laser beam.
Q (3)
Q 1 1
D(600o C )
a.
=
exp
D(400o C )
R T2 T1
T1 = 400+273=673 K, T2 =600+273=873 K
Q 1
7.5 x10 13
1
= exp
15
2.5 x10
R 873 673
300 = exp [(4.09x10-5)Q]
ln 300 = [(4.09x10-5)Q]
(5 marks)
b.
1
ni q( n + q )
= 0.45 .m
1
(2.4 x1019 )(1.60 x10 19 )(0.39 + 0.19)
(5 marks)
c. In the first stage of the plot, the intrinsic range, high temperatures impart sufficient energy
for the electrons to hurdle the semiconductor gap, Eg . Consequently, intrinsic conduction
dominates and the natural log of the conductivity varies inversely with 1/T as -Eg / 2k. The
second stage is respectively called the exhaustion range and the saturation range for n-type
and p-type semiconductors. Within this moderate temperature range, n-type donor atoms or ptype acceptor atoms become completely ionized. As a result, the electrical conduction
decreases as the intrinsic range is approached. In the third stage, the extrinsic rage, low
temperatures are sufficient to excite a donor electron into the conduction band of extrinsic
semiconductor. The slope of the curve in this region, is (Ec-Ed)/k and (Ea-Ev)/k for n-type
and p-type extrinsic semiconductors, respectively.
d. A pn junction diode can function as a current rectifier when an AC signal is applied such that the p
region has a positive voltage applied and the n region is subjected to a negative voltage. The resulting
positive half- wave rectification produced can be smoothed by other electronic devices and circuits
such that the final output is a steady DC signal.
(4 marks)
e. The addition of 3 to 4 percent silicon to iron reduces transformer-core energy losses by: increasing
electrical resistivity and thus decreasing eddy-current losses; decreasing magnetoanisotropy energy
and thus increasing magnetic permeability; decreasing magnetostriction within the iron core.
Disadvantages of adding silicon to iron transformer-core materials are the resulting reductions of
saturation induction, the iron Curie temperature, and the iron ductility.
A laminated structure increases the electrical efficiency of a power transformer by reducing eddycurrent losses; insulating layers between the sheets reduce the eddy-current path by preventing flow
between sheets, and thereby decrease the induced emf responsible for energy losses. (5 marks)
Q (4)
! !!
! !!"
! !!
! !!"
!
!
N= number of atoms per cubic meter= !"#$%& !" !!! !"#$ !"##
! !
! !.!"#$!
!
!
!! ! !
!
1000
! =
=
= 0.024 ! /.
! ! (1.610!!" )
! = 2.610!" !!
From Table:
5
!
! !"
! !
= erf
! !
2
!"
1.010 2.610!"
=
!"
1.010 0
2
= 0.974
2
!!!"! !
= 1.58 = ! !"##!"
= 1.1110!!" ! /
= 1.1110!!" = 2.410!!
T= 1265K = 992oC
347,000
8.31()
Q (5)
a.
! = ! . = 0.14500 = 70 /
The time required to traverse a length of 25 mm:
=
1
2510!!
=
= 3.610!!
!
70
b.
= 1.3 = 1.3
. !
1.36.0210!"
=
= 7.6210!! !! = 7.6210!" !!
!"
107.87
6.810!
=
= 5.57 ! /
. 7.6210!" 1.610!!"
c.
! =
25
=
= 1.9510!" !!
. (! + ! ) 1.610!!" (0.06 + 0.02)
d.
= nn|e|n+ pp|e|p
For the intrinsic material
8.9x104 = 8.7x1023(1.6x10-19) n + 8.7x1023(1.6x10-19) p
This reduces to
0.639 = n + p
Whereas, for the extrinsic GaSb
2.3x105= 7.6x1022(1.6x10-19) n + 1.0x1025(1.6x10-19) p
This is simplified to
0.1436 = 7.6x10-3 n + n
Thus, we have two independent expressions with two unknown mobilities. Upon solving
these equations simultaneously,
e.
! = 2.2!
!
7.8710! (6.0210!" )
=
=
= 8.4910!" /!
!"
55.85
! = 2.2 9.2710!!" 8.4910!" = 1.7310! /
! = ! ! = 1.25710!! 1.7310! = 2.18