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Rectificadores no controlados
1.1.
Figura 1.1: (a) Circuito rectificador de onda completa de 6 pulsos (b)Diagrama fasorial de
tensiones.
Voav
Voav
sin
x
= Vbo
x=
n=6
x
n
sin
/6
1/2
3
= Vbo
= Vbo
= Vbo
/6
/6
(1.1)
1
Voav
3
= ViL
(1.2)
Voav
ripple =
F2 1
= 380 2
3
= 513 V
(1.3)
Vorms
Voav
2
2
sin 2x
ViL
sin /3
Vo
2
Vo rms
=
1+
=
1+
2
2x
2
/3
!
2
2
ViL
3/2
=
1+
= ViL 0,9135
2
/3
2
2
9
= ViL 0,9119
Vo 2av
=
ViL
2
v
u 2
u ViL 0,9135
ripple = t 2
1 = 0,042
(1.4)
ViL 0,9119
F =
Ejemplo:
Se tiene el RECTIFICADOR NO CONTROLADO trifasico onda completa
tipo puente cuyas llaves son SKN 240/08.
Cual es la Ioav maxima que puede entregar el rectificador?
Cual es la Voav maxima que puede entregar el rectificador?
Cual es la Poav maxima que puede entregar el rectificador?
Y si es un rectificador trifasico de onda completa tipo punto medio?
Especificaciones de las hojas de datos
VRRM : Repetitive peak reverse voltage (Tension inversa pico repetitiva).
Especificacion MAXIMA.
IF av : Mean forward current (Corriente directa media o CC). Especificacion
MAXIMA.
IF SM : Surge forward current (Corriente directa surge). Especificacion MAXIMA.
IF RM S : RMS forward current (Corriente directa rms). Especificacion MAXIMA.
VRRM = 800 V
IF av = 240 A
IF SM = 6000 A
IF RM S = 500 A
(1.5)
IF RM S
Ioav
IF RM S
Io 0,9135
=
3
3
= Io
Io = Ioav
3
r 0,9135
= Ioav
= 0,578Ioav
3
3
(1.6)
Ioav max =
IF RM S
0,578
Ioav max =
500 A
= 865,5 A
0,578
(1.7)
3 PM
IF RM S
Ioav
0.409
3 Puente 6 PM
0.578
0.289
6 Puente (serie)
12 PM
12 Puente
0.577
0.204
0.577
Figura 1.6: C
alculo de Ioav a partir de IF av .
Ioav = 3IF av
IF av
1
= = 0,33
Ioav
3
3 PM
IF av
Ioav
0.167
IF av
Io av
IF av
:
Ioav
3 Puente 6 PM
0.333
(1.8)
6 Puente (serie)
12 PM
12 Puente
0.333
0.042
0.333
0.083
ViL
VRRM Vo
(1.9)
Voav max
Vomax = 800 V
3
Voav = Vo
3
= 800 V
= 764 V
(1.10)
Este proceso para obtener Voav a partir del VRRM del diodo provisto por las
hojas de datos se puede extender a los otros circuitos. Se obtiene la Tabla:
3 PM
VRRM
Voav
2.09
VRRM
Vo av
3 Puente 6 PM
1.105
2.02
6 Puente (serie) 12 PM
1.01
2.0
12 Puente
1.0
Finalmente, la potencia maxima en CC en la salida, PoCCmax , para un rectificador trifasico puente equipado con SKN 240/08 es:
(1.11)
PoCCmax = 661,2 kW
1.2.
IF RM S VRRM
0,409 2,09
500 A 800 V
= 467,9 kW
0,409 2,09
FILTROS DE POTENCIA
(1.12)
Voav = Viav
voca =
porque VLav = 0
XC //R
vica
XL + XC //R
(1.13)
Si XC << R:
voca u
XC
vica
XL + XC
(1.14)
Si XC << XL :
XC
vica
XL
XC vica
=
XL Voav
voca u
voca
Voav
(1.15)
voca
XC vica
=
Voav
XL Viav
Voca rms
XC Vica rms
=
Voav
XL Viav
(1.16)
XC
ri
XL
(1.17)
ro =
10
ri = 0,042
(1.18)
Si L = 0,001 H, C = 1000 F:
XC
XL
=
=
1
2 LC
1
2300 Hz 0,001 H 1000 F
2
1
= 0,28
3,55
(1.19)
Luego:
1.2.1.
(1.20)
Inductancia crtica
< ILav
ILca
(1.21)
11
Vica RM S 2
Voav
<
L
R
Vica RM S 2R
L >
Voav
Vica RM S 2R
L >
Viav
(1.22)
(1.23)
L > ri
2R
= Lcrit
(1.24)
21
L > 0,042
= 31,5 H
2300 Hz
(1.25)
12
1.2.2.
Transitorio en Filtro LC
Ejemplo
L = 0,001 H
C = 1000 F
E(s) =
Vo (s) =
514 V
s
(1.26)
E(s)
R
E(s)R
= 2
R
s CRL + sL + R
sL + 1+sCR 1 + sCR
1
E(s) CL
1
s2 + s RC
+
1
LC
1
=
LC
R = 1
1
E(s) CL
s2 + s2n + n2
L 1
C 2R
(1.27)
s1 , s2 =
2n
p
p
4 2 n2 4n2
= n n 2 1
2
= n jn
1 2
(1.28)
13
Vo (s) =
k
n2
A
Bs + D
=
+
s s2 + 2n s + n2
s
s2 + 2n s + n2
kn2
A(s2 + 2n s + n2 ) + Bs2 + Ds
=
s(s2 + 2n s + n2 )
s(s2 + 2n s + n2 )
(1.29)
2An + D = 0
A=k
B = k
An2 = 0
D = 2kn
(1.30)
Vo (s) =
k
ks
2kn s
+ 2
+ 2
2
s s + 2n s + n s + 2n s + n2
(1.31)
p
p
1 2 )t ken t sin(n 1 2 )t (1.32)
14
ICsat
ICRM
B2
Id
B6
CCHC
ID
Cies
ID
ID
IDC
IDCL
(IGBT)
Ciss
Cj
Junction capacitance
Cmax
IDD
IDM
cont
IDR
Coes; Coss
IDRM
IDSS
Cres; C rss
IE
iF
Duty cycle. D = f tp
IF
Forward current
IF(OV)
(di/dt)cr
IFAV
diD/dt
IFAV(B)
diF/dt
IFCL
diG/dt
IFM
diT/dt
IFN
diT/dt
IFRM
(dv/dt)cr
IFRMS
DSC
IFSM
Econd
IFWM
ED
Intermittend duty
IG
Gate current
e.m.f.
IGD
IGES
Eoff
Eon
IGoff
Err
IGon
fG
Maximum frequency
IGSS
Mounting force
IGT
Fu
IH
Holding current
gfs
Forward transconductance
IiH
IAOmax
IL
Latching current
IC
IM
ICES
IN
ICETRIP
ICM
INCL
ICp
(IGBT, MOS)
Cps
05-2004 by SEMIKRON
Pressure drop
IoutAV
IR
Reverse current
PAV
IR0
PD
Power dissipation
IRD
PFAV
IRM
PFM
Irms
PG
PR
IRMS
PRAV
irr
PRRM
PRSM
IRRM
IRSM
PTAV
IS
PVTOT
ISO
pw
Water pressure
Qf
PTOT
iT
IT
Qgel
ITAV
Qgsl
ITM
Qrr
Recovered charge
IT(OV)
ITRMS
ITSM
RC
i2t
i2t value
rCE
RCE
RDS(on)
IZ
rec ...
rec. 120
REX
LCE
RG
LDS
RGoff
Lext
RGon
Lp
Lss
RGS
Mounting torque
RL
M1
Rmin
M2
Mac
Rp
Mdc
Rp
rpm
Rs
rT
Np/N s
RTD
by SEMIKRON 05-2004
tpdon-err
Rthch
tpRESET
Rthcw
tq
Rthha
tr
Rise time
Rthja
tR
Rthjc
Tref
R(thjc)p
trr
tsp
Cycle time
Rthjr
Tstg
Rthjoil
Ttp
Rthjw
Tvj
Rthmw
Tw
Water temperature
sin...
tZ
sin. 180
SSC
Time
Tamb
Ambient temperature
Tbtt
tc
Tcase
Case temperature
tcond
vdt
vair
Vair
Air volume
Vair/t
Air flow
V(BR)
V(BR)CES
V(BR)DSS
Conducting time
VCC
td
Delay time
VCE
td(err)
VCEclamp
td(off)
VCES
td(off)io
VCEsat
td(on)
VCE(TO)
td(on)io
VCEstat
Terr
VCEdyn
te
On-time
tf
Vcond
tf
Fall time
Drain-source (collector-emitter-)voltage
in the conducting state
tfr
VD
tgd
VD
tgr
VDD
Th
Heatsink temperature
VDD
tif
VDGR
tir
Tj
Junction temperature
VDRM
Toil
VDS
Drain-source voltage
VEE
toff
Turn-off time
vF
ton
Turn-on time
VF
Top
VG
Gate voltage
Pulse duration
VGD
tp
05-2004 by SEMIKRON
Gate-emitter voltage
V(TO)
VGES
VT(TO)
Threshold voltage
VUVS
VGE(th)
Vv
VG(off)
VVRMS
VG(on)
Vw
Water volume
VGS
Gate-source voltage
VWW
VGS(th)
VGT
ViH
Weight
VISOL
W1
VisolIO
W3
Wcond
Visol12
WF, E F
ViT+
Woff, Eoff
ViT
Won,Eon
^ ^
Wp, Ep
Volw
VoH
VoL
^
V
Zth
Zthca
VR
VRD
Zthjc
VRGM
ZthjcD
VRGO
VRRM
VRSM
Zthjh
VRWM
VS
Zthha
VS1
Z(th)p
VS2
VSD
Z(th)t
Z(th)z
vT
Conduction angle
VT
by SEMIKRON 05-2004
VRSM
VRRM
320 A
Rectifier Diodes
SKN 100
SKN 130
SKN 240
SKR 100
SKR 130
SKR 240
200
400
800
1200
1400
1600
1800
SKN
100/02
100/04
100/08
100/12
100/14
100/16
100/18
SKR
100/02
100/04
100/08
100/12
100/14
100/16
100/18
Symbol Conditions
IFAV
SKN
130/02
130/04
130/08
130/12
130/14
130/16
130/18
SKR
130/02*
130/04*
130/08*
130/12*
130/14*
130/16*
130/18
SKN
240/02
240/04
240/08
240/12
240/14
240/16
240/18
SKR
240/02*
240/04*
240/08*
240/12*
240/14*
240/16*
240/18
SKN 100
SKR 100
SKN 130
SKR 130
SKN 240
SKR 240
sin. 180;
Tcase = 100 C
125 A
165 A
320 A
= 125 C
100 A
130 A
240 A
IFSM
Tvj = 25 C; 10 ms
Tvj = 180 C; 10 ms
1 750 A
1 500 A
2 500 A
2 000 A
6 000 A
5 000 A
i2t
Tvj = 25 C 8,3...
Tvj = 180 C 10 ms
15 000 A2s
11 500 A2s
31 000 A2s
20 000 A2s
typ. 100 C
typ. 120 C
typ. 200 C
1 mA
1 mA
2 mA
15 mA
22 mA
60 mA
1,55V (400A)
1,5V (500A)
1,4V (750A)
Qrr
IR
VF
Tvj = 160 C;
diF
A
= 10
dt
s
Tvj = 25 C;
VR = VRRM
Tvj = 180 C;
VR = VRRM
Tvj = 25 C;
(IF = ...); max.
V(TO)
Tvj = 180 C
0,85 V
0,85 V
0,85 V
rT
Tvj = 180 C
1,8 m
1,3 m
0,6 m
Rthjc
0,45 C/W
0,35 C/W
0,20 C/W
Rthch
0,08 C/W
0,08 C/W
0,03 C/W
Tvj
40 ... + 180 C
Tstg
55 ... + 180 C
SI units/US units
a
w
approx.
RC
PR = 2 W
Rp
PR = 20 W
Case
by SEMIKRON
Features
Reverse voltages up to 1600 V
Hermetic metal cases with
glass insulators
Threaded studs ISO M 12,
M16 x 1,5
(SKR 130 also 1/220 UNF
or 3/824 UNF,
SKR 240 also 3/416 UNF)
SKN: anode to stud
SKR: cathode to stud
Typical Applications
All-purpose mean power
rectifier diodes
Cooling via heatsinks
Non-controllable and
half-controllable rectifiers
Free-wheeling diodes
100 g
250 g
50 k
50 k
E 13
E 14
E 15
B 8 21
B 8 22
by SEMIKRON
by SEMIKRON
B 8 23
B 8 24
by SEMIKRON