MRF 5 S 9100 N

Freescale Semiconductor
Technical Data
Document Number: MRF5S9100N

Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S9100NR1
MRF5S9100NBR1
Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts,
IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 19.5 dB
Drain Efficiency 28%
ACPR @ 750 kHz Offset - 46.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
880 MHz, 20 W AVG., 26 V

SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1

TO - 270 WB - 4
PLASTIC
MRF5S9100NR1
CASE 1484 - 04, STYLE 1

TO - 272 WB - 4
PLASTIC
MRF5S9100NBR1
Table 1. Maximum Ratings

Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
336
1.92
W
W/C
Storage Temperature Range
Tstg
- 65 to +150
Operating Junction Temperature
TJ
200
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics

Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 20 W CW
RJC
0.52
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
MRF5S9100NR1 MRF5S9100NBR1
1
Table 3. ESD Protection Characteristics

Test Conditions
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level

Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
260
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)

Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
Adc
Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
Adc
Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
Adc
Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 A)
VGS(th)
2.8
3.5
Vdc
Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 950 mAdc)
VGS(Q)
3.7
Vdc
Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
0.21
0.3
Vdc
gfs
Output Capacitance
(VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
70
pF
Reverse Transfer Capacitance

(VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
2.2
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ 750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
18
19.5
dB
Drain Efficiency
26
28
ACPR
- 46.8
- 45
dBc
IRL
- 19
-9
dB
Adjacent Channel Power Ratio

Input Return Loss
1. Part internally input matched.
2
RF Device Data
B1
VBIAS
+
C22
+
C21
+
C20
C19
VSUPPLY
C17
C18
C6
C8
DUT
Z1
Z2
C1
Z3
Z4
Z5
C3
C4
Z6
Z7
+
C15
+
C14
+
C13
L2
L1
RF
INPUT
C16
Z9
RF
OUTPUT
C10
Z10
Z11
Z12
Z13
Z14
Z15
Z8
C12
C2
Z1, Z15
Z2
Z3
Z4
Z5
Z6, Z11
Z7
C7
C5
0.200 x 0.080 Microstrip

0.200 x 0.220 x 0.620 Taper
Z8
Z9
Z10
Z12
Z13
Z14
PCB
C9
C11

Arlon GX0300, 0.030, r = 2.55
Figure 1. MRF5S9100NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S9100NR1(NBR1) Test Circuit Component Designations and Values

Part
Description
Part Number
Manufacturer
B1
Ferrite Bead, Surface Mount
2743019447
Fair - Rite
C1, C12, C18
18 pF Chip Capacitors
100B180JP 500X
ATC
C2
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson Dielectrics
C3, C11
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson Dielectrics
C4
6.2 pF Chip Capacitor
100B6R2JP 500X
ATC
C5, C6
100B120JP 500X
ATC
C7, C8
100B110JP 500X
ATC
C9, C10
5.1 pF Chip Capacitors
100B5R1JP 500X
ATC
C13
470 mF, 63 V Electrolytic Capacitor
NACZF471M63V
Nippon
C14, C15
22 mF, 50 V Tantalum Capacitors
T491X226K035AS
Kemet
C16, C17, C19
0.56 mF, 50 V Chip Capacitors
C1825C564J5GAC
Kemet
C20, C21
47 mF, 16 V Tantalum Capacitors
T491D4T6K016AS
Kemet
C22
100 mF, 50 V Electrolytic Capacitor
515D107M050BB6A
Multicomp
L1
7.15 nH Inductor
1606 - 7
CoilCraft
L2
22 nH Inductor
B07T - 5
CoilCraft
RF Device Data
C21 C20
C15 C14
VGG
C13
C22
B1
C18
C19
C16
C6
C8
VDD
C17
C10
C2
C3
C5
WB2
WB1
C4
L1
CUT OUT AREA
C1
C12
L2
C9
C7
C11
MRF9100M
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9100NR1(NBR1) Test Circuit Component Layout
4
RF Device Data
TYPICAL CHARACTERISTICS
Gps
40
18
30
VDD = 26 Vdc, Pout = 20 W (Avg.), IDQ = 950 mA
NCDMA IS95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
16
14
IRL
12
ACPR
30
40
10
50
ALT
8
6
830
20
840
60
850
860
870
880
890
900
910
70
920
10
15
20
25
30
IRL, INPUT RETURN LOSS (dB)
20
D , DRAIN
EFFICIENCY (%)
50
ACPR (dBc), ALT (dBc)
G ps , POWER GAIN (dB)
22
f, FREQUENCY (MHz)
18
16
Gps
VDD = 26 Vdc, Pout = 2 W (Avg.), IDQ = 950 mA

NCDMA IS95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
14
IRL
12
10
40
50
ACPR
60
8
6
830
70
ALT
840
850
860
870
880
890
900
910
80
920
10
15
20
25
30
IRL, INPUT RETURN LOSS (dB)
20
10
ACPR (dBc), ALT (dBc)
22
D , DRAIN
EFFICIENCY (%)
Figure 3. IS - 95 Broadband Performance @ Pout = 20 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. IS - 95 Broadband Performance @ Pout = 2 Watts Avg.
20
20
IDQ = 1425 mA
IMD, THIRD ORDER

INTERMODULATION DISTORTION (dBc)
21
1150 mA
950 mA
19
700 mA
18
17
16
0.1
475 mA
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two Tone Measurements
1
10
100
1000
25
30
1425 mA
35
IDQ = 475 mA
40
45
1150 mA
50
950 mA
55
700 mA
60
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

65
70
0.1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus

Output Power
Figure 6. Third Order Intermodulation Distortion

versus Output Power
RF Device Data
58
Ideal
57
Pout, OUTPUT POWER (dBm)
10
20
3rd Order
30
5th Order
40
7th Order
50
70
0.1
10
P3dB = 51.58 dBm (143 W)
56
55
54
P1dB = 50.71 dBm (117 W)
53
52
Actual
51
50
VDD = 26 Vdc, Pout = 96 W (PEP), IDQ = 950 mA

(f1 + f2)/2 = Center Frequency of 880 MHz
60
VDD = 26 Vdc, IDQ = 950 mA

Pulsed CW, 8 sec(on), 1 msec(off)
f = 880 MHz
49
48
100
28
29
30
31
32
33
34
35
36
Figure 7. Intermodulation Distortion Products

versus Tone Spacing
Figure 8. Pulse CW Output Power versus

Input Power
30
VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz

NCDMA IS95 (Pilot, Sync, Paging,
Traffic Codes 8 through 13)
45
40
35
40
35
45
30
50
ACPR
25
55
Gps
20
60
15
65
10
70
75
ALT1
80
10
100
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

ALT1, CHANNEL POWER (dBm)
Pin, INPUT POWER (dBm)
50
38
37
TWO TONE SPACING (MHz)
D , DRAIN EFFICIENCY (%) G , POWER GAIN (dB)

ps
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single - Carrier N - CDMA ACPR, Power

Gain, Efficiency and ALT1 versus Output Power
1010
IDQ = 950 mA
f = 880 MHz
19.5
19
18.5
20 V
24 V
18
32 V
16 V
17.5
MTTF FACTOR (HOURS x AMPS2)
20
109
108
VDD = 12 V
17
0
30
60
90
120
150
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
180
107
80
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C)

This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Junction Temperature

6
RF Device Data
N - CDMA TEST SIGNAL
100
10
20
30
40
50
0.1
(dB)
PROBABILITY (%)
10
IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
60
70
80
90
0.0001
0
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
.
..
.
ALT1 in 30 kHz
+ALT1 in 30 kHz
.
..
.
Integrated BW
Integrated BW
..................
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
......
...........
......
...
..........
...........
100
PEAK TOAVERAGE (dB)
Figure 12. Single - Carrier CCDF N - CDMA
110
3.6 2.9 2.2
1.5
0.7
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 13. Single - Carrier N - CDMA Spectrum
RF Device Data
f = 895 MHz
Zload
f = 865 MHz
f = 865 MHz
f = 895 MHz
Zsource
Zo = 5
VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg.

f
MHz
Zsource
Zload
865
3.0 - j1.8
1.4 - j0.7
880
2.8 - j1.9
1.5 - j0.6
895
2.7 - j1.7
1.5 - j0.5
Zsource = Test circuit impedance as measured from

gate to ground.
Zload
= Test circuit impedance as measured

from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
source
load
Figure 14. Series Equivalent Source and Load Impedance
8
RF Device Data
NOTES
RF Device Data
NOTES
10
RF Device Data
NOTES
RF Device Data
11
PACKAGE DIMENSIONS
E1
2X
E3
GATE LEAD
DRAIN LEAD
D1
4X
4X
b1
aaa M C A
2X
2X
D2
c1
DATUM
PLANE
ZONE J
A1
2X
A2
E2
NOTE 7
E5
E4
D3
3
E5
BOTTOM VIEW
SEATING
PLANE
PIN 5
NOTE 8
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF5S9100NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS D" AND E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS D" AND E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
.551
.559
.353
.357
.132
.140
.124
.132
.270
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
12
RF Device Data
RF Device Data
13
14
RF Device Data
RF Device Data
15
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Document Number: MRF5S9100N
Rev. 5, 5/2006
16
RF Device Data

MRF 5 S 9100 N

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Document Number: MRF5S9100N

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

880 MHz, 20 W AVG., 26 V

CASE 1486 - 03, STYLE 1

CASE 1484 - 04, STYLE 1

Table 1. Maximum Ratings

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ TC = 25C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

Freescale Semiconductor, Inc., 2006. All rights reserved.

Table 3. ESD Protection Characteristics

Human Body Model (per JESD22 - A114)

Machine Model (per EIA/JESD22 - A115)

Charge Device Model (per JESD22 - C101)

Table 4. Moisture Sensitivity Level

Package Peak Temperature

Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)

Zero Gate Voltage Drain Leakage Current

Zero Gate Voltage Drain Leakage Current

Gate - Source Leakage Current

Gate Threshold Voltage

Gate Quiescent Voltage

Drain - Source On - Voltage

Reverse Transfer Capacitance

Adjacent Channel Power Ratio

0.200 x 0.080 Microstrip

0.163 x 0.620 Microstrip

Figure 1. MRF5S9100NR1(NBR1) Test Circuit Schematic

Table 6. MRF5S9100NR1(NBR1) Test Circuit Component Designations and Values

Ferrite Bead, Surface Mount

C1, C12, C18

0.6 - 4.5 pF Variable Capacitor, Gigatrim

0.8 - 8.0 pF Variable Capacitors, Gigatrim

6.2 pF Chip Capacitor

5.1 pF Chip Capacitors

470 mF, 63 V Electrolytic Capacitor

22 mF, 50 V Tantalum Capacitors

C16, C17, C19

0.56 mF, 50 V Chip Capacitors

47 mF, 16 V Tantalum Capacitors

100 mF, 50 V Electrolytic Capacitor

CUT OUT AREA

Figure 2. MRF5S9100NR1(NBR1) Test Circuit Component Layout

IRL, INPUT RETURN LOSS (dB)

ACPR (dBc), ALT (dBc)

G ps , POWER GAIN (dB)

VDD = 26 Vdc, Pout = 2 W (Avg.), IDQ = 950 mA

IRL, INPUT RETURN LOSS (dB)

G ps , POWER GAIN (dB)

ACPR (dBc), ALT (dBc)

Figure 3. IS - 95 Broadband Performance @ Pout = 20 Watts Avg.

Figure 4. IS - 95 Broadband Performance @ Pout = 2 Watts Avg.

G ps , POWER GAIN (dB)

IMD, THIRD ORDER

VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Pout, OUTPUT POWER (WATTS) PEP