STP6NF06

STD65NF06
STP65NF06
N-channel 60V - 11.5m - 60A - DPAK/TO-220
STripFET II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STD65NF06
60V
<14m
60A
STP65NF06
60V
<14m
60A
Standard level gate drive
100% avalanche tested
DPAK
TO-220
Description
This Power MOSFET is the latest development of
STMicroelectronics unique single feature size
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number
Marking
Package
Packaging
STD65NF06
D65NF06
DPAK
Tape & reel
STP65NF06
P65NF06
TO-220
Tube
July 2006
Rev 1
1/14
www.st.com
14
Contents
STD65NF06 - STP65NF06
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
Test circuit
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
Gate- source voltage
Value
Unit
60
20
ID
Drain current (continuous) at TC = 25C
60
ID
Drain current (continuous) at TC = 100C
42
Drain current (pulsed)
240
Total dissipation at TC = 25C
110
Derating Factor
0.73
W/C
Peak diode recovery voltage slope
10
V/ns
Single pulse avalanche energy
390
mJ
-55 to 175
IDM
(1)
Ptot
dv/dt (2)
EAS
(3)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.

2.
ISD 60A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX
3. Starting Tj = 25 C, ID = 30A, VDD = 40V
Table 2.
Symbol
Thermal data
Parameter
TO-220
Rthj-case Thermal resistance junction-case max

Rthj-amb
Rthj-pcb(1)
Tl
Thermal resistance junction-ambient max

Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
DPAK
1.36
Unit
C/W
62.5
--
C/W
--
50
C/W
300
--
C/W
1. When mounted on FR-4 of 1 inch, 2 oz Cu
3/14
Electrical characteristics
(TCASE=25C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250A, VGS =0
IDSS
Zero gate voltage

drain current (VGS = 0)
VDS = Max rating

VDS = Max rating,@125C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250A
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
Table 4.
Symbol
Test conditions
Typ.
Max.
60
Unit
V
1
10
A
A
100
nA
11.5
14
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS= 25V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Min.
50
VDS = 25V, f = 1MHz,

VGS = 0
1700
400
135
pF
pF
pF
Turn-on delay time

Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A

RG = 4.7 VGS = 10V
(see Figure 12)
15
60
40
16
ns
ns
ns
ns
Total gate charge

Gate-source charge
Gate-drain charge
VDD = 30V, ID = 60A,

VGS = 10V, RG = 4.7
(see Figure 13)
54
10
20
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
4/14
Min.
75
nC
nC
nC
Table 5.
Symbol
Source drain diode

Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Test conditions
Min.
Typ.
ISD = 60A, VGS = 0
Reverse recovery time

ISD = 60A, di/dt = 100A/s,
Reverse recovery charge VDD = 25V, Tj = 150C
Reverse recovery current (see Figure 14)
70
150
4.4
Max.
Unit
60
240
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
5/14
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Normalized breakdown voltage

temperature
Figure 6.
Static drain-source on resistance
6/14
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage

vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs

temperature
Figure 11. Source-drain diode forward

characteristics
7/14
Test circuit
Test circuit
Figure 12. Switching times test circuit for

resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load

Figure 15. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/14
Figure 17. Switching time waveform
Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/14
TO-220 MECHANICAL DATA

DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
0.49
0.70
0.019
0.027
15.25
15.75
0.60
0.620
10
10.40
0.393
0.409
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/14
TYP
0.154
0.645
28.90
1.137
3.75
3.85
0.147
0.151
2.65
2.95
0.104
0.116
DPAK MECHANICAL DATA

mm.
inch
DIM.
MIN.
A
A1
A2
B
b4
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
TYP
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
MAX.
MIN.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
6.6
0.252
5.1
6.4
0.260
0.090
4.6
10.1
0.173
0.368
0.039
2.8
0.8
0.181
0.397
0.110
0.031
0.023
0.2
0
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.185
2.28
0.6
MAX.
0.200
4.7
4.4
9.35
1
TYP.
0.039
0.008
0068772-F
11/14
Packing mechanical data
Packing mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
12.8
20.2
16.4
50
TAPE MECHANICAL DATA

DIM.
mm
MIN.
MAX.
A0
6.8
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
12/14
inch
1.5
D1
1.5
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
Revision history
Revision history
Table 6.
Revision history
Date
Revision
24-Jul-2006
Changes
First release
13/14
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STD65NF06

Standard level gate drive

100% avalanche tested

Internal schematic diagram

Tape & reel

Electrical characteristics (curves)

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Absolute maximum ratings

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25C

Drain current (continuous) at TC = 100C

Drain current (pulsed)

Total dissipation at TC = 25C

Peak diode recovery voltage slope

Single pulse avalanche energy

1. Pulse width limited by safe operating area.

ISD 60A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX

3. Starting Tj = 25 C, ID = 30A, VDD = 40V

Rthj-case Thermal resistance junction-case max

Thermal resistance junction-ambient max

1. When mounted on FR-4 of 1 inch, 2 oz Cu

Zero gate voltage

VDS = Max rating

Gate threshold voltage

VDS = VGS, ID = 250A

VGS = 10V, ID = 30A

VDS= 25V, ID = 30A

VDS = 25V, f = 1MHz,

Turn-on delay time

VDD = 30V, ID = 30A

Total gate charge

VDD = 30V, ID = 60A,

1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

Source drain diode

ISD = 60A, VGS = 0

Reverse recovery time

1. Pulse width limited by safe operating area.

Electrical characteristics (curves)

Safe operating area

Normalized breakdown voltage

Static drain-source on resistance

Gate charge vs gate-source voltage Figure 8.

Normalized gate threshold voltage

Figure 10. Normalized on resistance vs

Figure 11. Source-drain diode forward

Figure 12. Switching times test circuit for

Figure 13. Gate charge test circuit

Figure 14. Test circuit for inductive load

Figure 16. Unclamped inductive waveform

Figure 17. Switching time waveform

Package mechanical data

Package mechanical data

Package mechanical data

TO-220 MECHANICAL DATA

Package mechanical data

DPAK MECHANICAL DATA

Packing mechanical data

Packing mechanical data

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

TAPE MECHANICAL DATA

Please Read Carefully: