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4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS
FOD817 Series
DESCRIPTION
The FOD817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES

Applicable to Pb-free IR reflow soldering


Compact 4-pin package
Current transfer ratio in selected groups:
FOD817:
50-600%
FOD817A:
80-160%
FOD817B:
130-260%
FOD817C:
200-400%
FOD817D:
300-600%

FUNCTIONAL BLOCK DIAGRAM

C-UL, UL and VDE approved


High input-output isolation voltage of 5000 Vrms

ANODE 1

4 COLLECTOR

APPLICATIONS
CATHODE 2

FOD817 Series
Power supply regulators
Digital logic inputs
Microprocessor inputs

3 EMITTER

ABSOLUTE MAXIMUM RATINGS (TA = 25C Unless otherwise specified.)


Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
EMITTER
Continuous Forward Current
Reverse Voltage
LED Power Dissipation
Derate above 25C

Value

Units

TSTG
TOPR
TSOL
PD

-55 to +125
-30 to +100
260 for 10 sec
200

C
C
C
mW

IF
VR

50
6
70
0.93

mA
V
mW
mW/C

70
6
50
150
2.0

V
V
mA
mW
mW/C

PD

DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current

VCEO
VECO
IC

Detector Power Dissipation


Derate above 25C

2004 Fairchild Semiconductor Corporation

Symbol

PD

Page 1 of 9

8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ELECTRICAL CHARACTERISTICS (TA = 25C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter

Test Conditions

EMITTER
Input Forward Voltage
Reverse Leakage Current
Terminal Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current

Symbol

Min

Typ*

Max

Unit

(IF = 20 mA)

VF

1.2

1.4

(VR = 4.0 V)
(V = 0, f = 1 kHz)

IR
Ct

30

10
250

A
pF

(IC = 0.1 mA, IF = 0)


(IE = 10 A, IF = 0)
(VCE = 20 V, IF = 0)

BVCEO
BVECO
ICEO

70
6

100

V
V
nA

*Typical values at TA = 25C.

TRANSFER CHARACTERISTICS (TA = 25C Unless otherwise specified.)


DC Characteristic

Test Conditions

Current Transfer Ratio

Symbol

(IF = 5 mA, VCE = 5 V) (note 1)

Collector-Emitter
Saturation Voltage

CTR

Device

Min

Typ*

Max

Unit

FOD817

50

600

FOD817A

80

160

FOD817B

130

260

FOD817C

200

400

FOD817D

300

600

(IF = 20 mA, IC = 1 mA)

VCE (SAT)

0.1

0.2

Rise Time

(IC = 2 mA, VCE = 2 V, RL = 100) (note 2)

tr

18

Fall Time

(IC = 2 mA, VCE = 2 V, RL = 100) (note 2)

tf

18

AC Characteristic

ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance

Test Conditions

Symbol

Min

f = 60Hz, t = 1 min

VISO

5000

(VI-O = 500 VDC)

RISO

(VI-O = 0, f = 1 MHz)

CISO

5x

1010

Typ*

Max

Units
Vac(rms)

1011
0.6

1.0

pf

*Typical values at TA = 25C.


NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

2004 Fairchild Semiconductor Corporation

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Typical Electrical/Optical Characteristic Curves (TA = 25C Unless otherwise specified.)
COLLECTOR POWER DISSIPATION PC (mW)

Fig. 1 Forward Current


vs. Ambient Temperature
FORWARD CURRENT IF (mA)

60
50
40
30
20
10
0
-30

0
25
50
70
100 125
AMBIENT TEMPERATURE TA (C)

Fig. 3 Collector-Emitted Saturation Voltage


vs. Forward Current

150

100

50

0
-30

0
25
50
70
100 125
AMBIENT TEMPERATURE TA (C)

Ta = 25C

FORWARD CURRENT IF (mA)

5m A

7m A

1m A

500
3m A

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)

200

Fig. 4 Forward Current vs. Forward Voltage

4
3
2
1

Ta =75C
50C

200

25C
0C
-25C

100
50
20
10
5
2
1

0
0

10

15

1.0

1.5

2.0

2.5

3.0

FORWARD VOLTAGE VF (V)

Fig. 5 Current Transfer Ratio


vs. Forward Current

Fig. 6 Collector Current


vs. Collector-Emitter Voltage

200

30
VCE = 5V
Ta = 25C

180
160
140
120
100
80
60
40
20
0

0.5

FORWARD CURRENT IF (mA)

COLLECTOR CURRENT IC (mA)

CURRENT TRANSFER RATIO CTR ( %)

Fig. 2 Collector Power Dissipation


vs. Ambient Temperature

10

20

Ta = 25C
20mA
Pc(MAX.)

20
15
10mA

10
5m A

5
0

50

FORWARD CURRENT IF (mA)

2004 Fairchild Semiconductor Corporation

I IF = 30mA

25

COLLECTOR-EMITTER VOLTAGE VCE (V)

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Typical Electrical/Optical Characteristic Curves (TA = 25C Unless otherwise specified.)
Fig. 8 Collector-Emitter Saturation Voltage
vs. Ambient Temperature

Fig. 7. Relative Current Transfer Ratio


vs. Ambient Temperature
IF = 5mA
VCE = 5V
100

50

0
-30

0.16

IF = 20mA
IC = 1mA

0.14
0.12
0.10
0.08
0.06
0.04
0.02

0
-25
0
25
50
75
100
AMBIENT TEMPERATURE TA (C)

0
25
50
75
100
AMBIENT TEMPERATURE TA (C)

Fig. 9 Collector Dark Current


vs. Ambient Temperature

Fig. 10. Response Time


vs. Load Resistance

10-5

500

VCE = 20V
10-6
RESPONSE TIME (s)

COLLECTOR DARK CURRENT ICEO (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)

RELATIVE CURRENT TRANSFER


RATIO (%)

150

10-7
10-8
10-9
10-10

VCE = 2V
200 IC = 2mA
Ta = 25C
100
50

tr

20

tf

10

td

ts

2
1
0.5

10-11
-25

0.1 0.2

0.5

10

LOAD RESISTANCE RL (k)

Test Circuit for Response Time

Fig. 11. Frequency Response

VOLTAGE GAIN AV (dB)

0.2
0.05

0
25
50
75
100
AMBIENT TEMPERATURE TA (C)

VCE = 2V
IC = 2mA
Ta = 25C

10

RL=10k 1k 100

20

0.5 1

Test Circuit for Frequency Response


2

5 10 20

50 100

500

FREQUENCY f (kHz)

2004 Fairchild Semiconductor Corporation

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Package Dimensions (Through Hole)

Package Dimensions (Surface Mount)

SEATING PLANE

0.312 (7.92)
0.288 (7.32)
0.276 (7.00)
0.236 (6.00)

0.312 (7.92)
0.288 (7.32)
0.200 (5.10)
0.161 (4.10)

SEATING PLANE

0.200 (5.10)
0.161 (4.10)

0.157 (4.00)
0.118 (3.00)

0.276 (7.00)
0.236 (6.00)

0.157 (4.00)
0.118 (3.00)
0.010 (0.26)

0.130 (3.30)
0.091 (2.30)

0.051 (1.30)
0.043 (1.10)

0.020 (0.51)
TYP

0.010 (0.26)

0.150 (3.80)
0.110 (2.80)

0.300 (7.62)
typ

0.110 (2.79)
0.090 (2.29)

SEATING PLANE

0.412 (10.46)
0.388 (9.86)

0.110 (2.79)
0.090 (2.29)
Lead Coplanarity 0.004 (0.10) MAX

Footprint Dimensions (Surface Mount)

0.312 (7.92)
0.288 (7.32)
0.157 (4.00)
0.118 (3.00)

1.5

0.276 (7.00)
0.236 (6.00)

1.3

0.291 (7.40)
0.252 (6.40)

0.130 (3.30)
0.091 (2.30)
0.110 (2.80)
0.011 (1.80)

0.150 (3.80)
0.110 (2.80)
0.024 (0.60)
0.016 (0.40)

0.024 (0.60)
0.004 (0.10)

0.024 (0.60)
0.016 (0.40)

Package Dimensions (0.4 Lead Spacing)

0.200 (5.10)
0.161 (4.10)

0.049 (1.25)
0.030 (0.76)

0.010 (0.26)

0.110 (2.79)
0.090 (2.29)

2.54

NOTE
All dimensions are in inches (millimeters)

2004 Fairchild Semiconductor Corporation

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ORDERING INFORMATION
Option

Order Entry Identifier

Description

.S

Surface Mount Lead Bend

SD

.SD

Surface Mount; Tape and reel

.W

0.4" Lead Spacing

300

.300

VDE 0884

300W

.300W

VDE 0884, 0.4" Lead Spacing

3S

.3S

VDE 0884, Surface Mount

3SD

.3SD

VDE 0884, Surface Mount, Tape & Reel

MARKING INFORMATION

V X ZZ Y
3

817

Definitions
1

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE


option See order entry table)

One digit year code

Two digit work week ranging from 01 to 53

Assembly package code

2004 Fairchild Semiconductor Corporation

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Carrier Tape Specifications
P2

1.550.05

P0

1.750.1

F
W

P1

0.30.05

NOTE
All dimensions are in millimeters

Description

Symbol

Dimensions in mm (inches)

Tape wide

16 0.3 (.63)

Pitch of sprocket holes

P0

4 0.1 (.15)

Distance of compartment

F
P2

7.5 0.1 (.295)


2 0.1 (.079)

Distance of compartment to compartment

P1

12 0.1 (.472)

2004 Fairchild Semiconductor Corporation

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Lead Free recommended IR Reflow condition

Temperature (C)

Tp

Tsmax

Ramp-down

Tsmin

25C
Soldering zon

ts (Preheat)
Time (sec)
Profile Feature

Pb-Sn solder assembly

Lead Free assembly

Preheat condition
(Tsmin-Tsmax / ts)

100C ~ 150C
60 ~ 120 sec

150C ~ 200C
60 ~120 sec

Melt soldering zone

183C
60 ~ 120 sec

217C
30 ~ 90 sec

Peak temperature (Tp)

240 +0/-5C

250 +0/-5C

Ramp-down rate

6C/sec max.

6C/sec max.

Recommended Wave Soldering condition


Profile Feature

For all solder assembly

Peak temperature (Tp)

2004 Fairchild Semiconductor Corporation

Max 260C for 10 sec

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8/19/04

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2004 Fairchild Semiconductor Corporation

2. A critical component in any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

Page 9 of 9

8/19/04

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