Infineon Ipb60r190p6 Ds v02 02 en

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOSP6
600VCoolMOSP6PowerTransistor
IPx60R190P6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
IPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
1Description
TO-247
CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSP6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
DPAK
TO-220
tab
tab
2
1
3
TO-220FP
Features
IncreasedMOSFETdv/dtruggedness
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Veryhighcommutationruggedness
Easytouse/drive
Pb-freeplating,Halogenfreemoldcompound
QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
RDS(on),max
190
Qg.typ
37
nC
ID,pulse
57
Eoss@400V
4.9
Body diode di/dt
500
A/s
Type/OrderingCode
Package
IPW60R190P6
PG-TO 247
IPB60R190P6
PG-TO 263
IPP60R190P6
PG-TO 220
IPA60R190P6
PG-TO 220 FullPAK
Final Data Sheet
Marking
6R190P6
RelatedLinks
see Appendix A
Rev.2.2,2015-07-10
IPA60R190P6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet
Rev.2.2,2015-07-10
IPA60R190P6
2Maximumratings
atTj=25C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
20.2
12.7
TC=25C
TC=100C
57
TC=25C
419
mJ
ID=3.5A; VDD=50V; see table 12
EAR
0.63
mJ
ID=3.5A; VDD=50V; see table 12
Avalanche current, repetitive
IAR
3.5
MOSFET dv/dt ruggedness
dv/dt
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
20
static;
Gate source voltage (dynamic)
VGS
-30
30
AC (f>1 Hz)
Power dissipation (Non FullPAK)

TO-220, TO-263, TO-247
Ptot
151
TC=25C
Power dissipation (FullPAK)

TO-220FP
Ptot
34
TC=25C
Storage temperature
Tstg
-55
150
Operating junction temperature
Tj
-55
150
Mounting torque (Non FullPAK)

TO-220, TO-247
60
Ncm M3 and M3.5 screws
Mounting torque (FullPAK)

TO-220FP
50
Ncm M2.5 screws
Continuous diode forward current
IS
17.5
TC=25C
Diode pulse current
IS,pulse
57
TC=25C
Reverse diode dv/dt3)
dv/dt
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25C
see table 10
Maximum diode commutation speed
dif/dt
500
A/s
VDS=0...400V,ISD<=IS,Tj=25C
see table 10
Insulation withstand voltage for

TO-220FP
VISO
2500
Vrms,TC=25C,t=1min
Min.
Typ.
Max.
ID
Pulsed drain current2)
ID,pulse
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
1)
Limited by Tj max. Maximum duty cycle D=0.75

Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
Rev.2.2,2015-07-10
IPA60R190P6
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
0.83
C/W -
Thermal resistance, junction - ambient RthJA
62
C/W leaded
Soldering temperature, wavesoldering

only allowed at leads
260
1.6mm (0.063 in.) from case for 10s
Unit
Note/TestCondition
Tsold
Table4Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Values
Min.
Typ.
Max.
RthJC
3.7
C/W -
80
C/W leaded
Soldering temperature, wavesoldering

only allowed at leads
260
1.6mm (0.063 in.) from case for 10s
Unit
Note/TestCondition
Tsold
Table5ThermalcharacteristicsTO-263
Parameter
Symbol
Values
Min.
Typ.
Max.
RthJC
0.83
C/W -
62
C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient

RthJA
for SMD version
35
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm (one
layer, 70m thickness) copper area
C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave & reflow

soldering allowed
260
Final Data Sheet
Tsold
reflow MSL1
Rev.2.2,2015-07-10
IPA60R190P6
4Electricalcharacteristics
atTj=25C,unlessotherwisespecified
Table6Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
VGS=0V,ID=1mA
4.0
4.5
VDS=VGS,ID=0.63mA
10
1
-
VDS=600,VGS=0V,Tj=25C
VDS=600,VGS=0V,Tj=150C
IGSS
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
0.171
0.445
0.190
-
VGS=10V,ID=7.6A,Tj=25C
VGS=10V,ID=7.6A,Tj=150C
Gate resistance
RG
3.4
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
Gate threshold voltage
V(GS)th
3.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table7Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
1750
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
76
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,

energy related1)
Co(er)
61
pF
VGS=0V,VDS=0...400V
Effective output capacitance,

time related2)
Co(tr)
264
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
15
ns
VDD=400V,VGS=13V,ID=9.5A,
RG=3.4;seetable11
Rise time
tr
ns
RG=3.4;seetable11
Turn-off delay time
td(off)
45
ns
RG=3.4;seetable11
Fall time
tf
ns
RG=3.4;seetable11
Unit
Note/TestCondition
Table8Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
11
nC
VDD=400V,ID=9.5A,VGS=0to10V
Gate to drain charge
Qgd
13
nC
Gate charge total
Qg
37
nC
Gate plateau voltage
Vplateau
6.1
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
Rev.2.2,2015-07-10
IPA60R190P6
Table9Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
VGS=0V,IF=9.5A,Tj=25C
310
ns
VR=400V,IF=9.5A,diF/dt=100A/s;
see table 10
see table 10
25
see table 10
Min.
Typ.
Max.
VSD
0.9
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
Rev.2.2,2015-07-10
IPA60R190P6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
Diagram2:Powerdissipation(FullPAK)
160
35
140
30
120
25
Ptot[W]
Ptot[W]
100
80
20
15
60
10
40
20
0
25
50
75
100
125
150
25
50
TC[C]
75
100
125
150
TC[C]
Ptot=f(TC)
Ptot=f(TC)
Diagram3:Max.transientthermalimpedance(NonFullPAK)
Diagram4:Max.transientthermalimpedance(FullPAK)
101
10
0.5
100
ZthJC[K/W]
ZthJC[K/W]
100
0.5
0.2
0.1
10-1
0.2
0.1
0.05
0.02
10-1
0.05
0.02
0.01
0.01
single pulse
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
10-2
10-5
10-4
10-3
tp[s]
10-1
100
101
tp[s]
ZthJC=f(tP);parameter:D=tp/T
Final Data Sheet
10-2
ZthJC=f(tP);parameter:D=tp/T
Rev.2.2,2015-07-10
IPA60R190P6
Diagram5:Safeoperatingarea(NonFullPAK)
Diagram6:Safeoperatingarea(FullPAK)
102
102
1 s
1 s
10 s
10 s
10
100 s
101
100 s
1 ms
1 ms
10 ms
100
ID[A]
100
ID[A]
10 ms
DC
10-1
DC
10-1
10-2
10-2
10-3
10-3
100
101
102
10-4
103
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=25C;D=0;parameter:tp
Diagram7:Safeoperatingarea(NonFullPAK)
Diagram8:Safeoperatingarea(FullPAK)
103
102
10
1 s
1 s
10 s
100 s
101
10 s
100 s
101
1 ms
1 ms
100
ID[A]
DC
ID[A]
10 ms
100
10 ms
10-1
DC
10-1
10-2
10-2
10-3
10-3
100
101
102
103
10-4
100
101
102
VDS[V]
VDS[V]
Final Data Sheet
103
Rev.2.2,2015-07-10
IPA60R190P6
Diagram9:Typ.outputcharacteristics
Diagram10:Typ.outputcharacteristics
60
40
20 V
10 V
55
20 V
10 V
35
50
8V
45
30
8V
40
25
7V
ID[A]
ID[A]
35
7V
30
20
25
15
6V
20
15
10
5.5 V
6V
10
5
0
5V
5.5 V
5
4.5 V
0
10
5V
15
20
4.5 V
0
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25C;parameter:VGS
ID=f(VDS);Tj=125C;parameter:VGS
Diagram11:Typ.drain-sourceon-stateresistance
Diagram12:Drain-sourceon-stateresistance
1.50
0.50
1.40
0.45
1.30
0.40
1.20
1.10
0.35
0.90
6V
5.5 V
6.5 V
RDS(on)[]
RDS(on)[]
1.00
7V
0.80
0.70
10 V
98%
0.25
typ
0.20
0.60
20 V
0.50
0.30
0.15
0.40
0.10
0.30
0.20
10
20
30
40
0.05
-50
-25
25
ID[A]
RDS(on)=f(ID);Tj=125C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[C]
RDS(on)=f(Tj);ID=7.6A;VGS=10V
10
Rev.2.2,2015-07-10
IPA60R190P6
Diagram13:Typ.transfercharacteristics
Diagram14:Typ.gatecharge
60
10
25 C
50
8
7
40
120 V
480 V
20
30
30
VGS[V]
ID[A]
150 C
5
4
20
3
2
10
1
0
10
12
10
VGS[V]
40
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=9.5Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
Diagram16:Avalancheenergy
10
450
400
350
101
IF[A]
125 C
EAS[mJ]
300
25 C
100
250
200
150
100
50
10-1
0.0
0.5
1.0
1.5
2.0
25
50
VSD[V]
100
125
150
Tj[C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=3.5A;VDD=50V
11
Rev.2.2,2015-07-10
IPA60R190P6
Diagram17:Drain-sourcebreakdownvoltage
Diagram18:Typ.capacitances
104
700
680
Ciss
660
103
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
580
101
560
Crss
540
520
-75
-50
-25
25
50
75
100
125
150
175
100
100
Tj[C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
7
Eoss[J]
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
12
Rev.2.2,2015-07-10
IPA60R190P6
6TestCircuits
Table10Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform

V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
dIrr / dt trr =tF +tS

Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table11Switchingtimes
Switching times test circuit for inductive load
Switching times waveform

VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table12Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
13
ID
VDS
Rev.2.2,2015-07-10
IPA60R190P6
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
Final Data Sheet
14
Rev.2.2,2015-07-10
IPA60R190P6
Final Data Sheet
15
Rev.2.2,2015-07-10
IPA60R190P6
Final Data Sheet
16
Rev.2.2,2015-07-10
IPA60R190P6
DIM
A
A1
A2
b
b1
b2
b3
b4
c
D
D1
E
e
e1
N
H
L
L1
Q
MILLIMETERS
MIN
MAX
4.50
4.90
2.34
2.85
2.86
2.42
0.65
0.90
0.95
1.38
0.95
1.51
0.65
1.38
0.65
1.51
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54 (BSC)
INCHES
MIN
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
DOCUMENT NO.
Z8B00003319
SCALE
2.5
0
2.5
5mm
EUROPEAN PROJECTION
0.100 (BSC)
5.08
3
28.70
12.78
2.83
2.95
3.15
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
0.200
3
29.75
13.75
3.45
3.38
3.50
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
05-05-2014
REVISION
04
Figure4OutlinePG-TO220FullPAK,dimensionsinmm/inches
Final Data Sheet
17
Rev.2.2,2015-07-10
IPA60R190P6
8AppendixA
Table13RelatedLinks
IFXCoolMOSTMP6Webpage:www.infineon.com
IFXCoolMOSTMP6applicationnote:www.infineon.com
IFXCoolMOSTMP6simulationmodel:www.infineon.com
IFXDesigntools:www.infineon.com
Final Data Sheet
18
Rev.2.2,2015-07-10
IPA60R190P6
RevisionHistory
IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6
Revision:2015-07-10,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2013-12-04
Release of final version
2.1
2013-12-05
Release of multi-package datasheet
2.2
2015-07-10
PG-TO 263 package added
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
19
Rev.2.2,2015-07-10

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MOSFET

Body diode di/dt

PG-TO 220 FullPAK

Final Data Sheet

Final Data Sheet

Continuous drain current1)

ID=3.5A; VDD=50V; see table 12

ID=3.5A; VDD=50V; see table 12

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation (Non FullPAK)

Power dissipation (FullPAK)

Operating junction temperature

Mounting torque (Non FullPAK)

Ncm M3 and M3.5 screws

Mounting torque (FullPAK)

Ncm M2.5 screws

Continuous diode forward current

Diode pulse current

Reverse diode dv/dt3)

Maximum diode commutation speed

Insulation withstand voltage for

Pulsed drain current2)

Avalanche energy, single pulse

Avalanche energy, repetitive

Limited by Tj max. Maximum duty cycle D=0.75

Final Data Sheet

Thermal resistance, junction - case

Thermal resistance, junction - ambient RthJA

Soldering temperature, wavesoldering

1.6mm (0.063 in.) from case for 10s

Thermal resistance, junction - case

Thermal resistance, junction - ambient RthJA

Soldering temperature, wavesoldering

1.6mm (0.063 in.) from case for 10s

Thermal resistance, junction - case

Thermal resistance, junction - ambient RthJA

C/W device on PCB, minimal footprint

Thermal resistance, junction - ambient

Soldering temperature, wave & reflow

Final Data Sheet

Drain-source breakdown voltage

Drain-source on-state resistance

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Effective output capacitance,

Effective output capacitance,

Turn-on delay time

Turn-off delay time

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Final Data Sheet

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Final Data Sheet

Final Data Sheet