2SK3878

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV)

2SK3878
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 1.0 (typ.)

High forward transfer admittance: Yfs = 7.0 S (typ.)

Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

900

Drain-gate voltage (RGS = 20 k)

VDGR

900

Gate-source voltage

VGSS

30

DC

(Note 1)

ID

Pulse

(Note 1)

IDP

27

Drain power dissipation (Tc = 25C)

PD

150

Single pulse avalanche energy

(Note 2)

EAS

778

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

15

mJ

TOSHIBA

Channel temperature

Tch

150

Weight: 4.6 g (typ.)

Storage temperature range

Tstg

55~150

Drain current

1. GATE
2. DRAIN (HEATSINK)
3. SOURCE

JEDEC

JEITA

SC-65
216C1B

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

0.833

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

50

C/W

Note 1: Ensure that the channel temperature does not exceed 150C
during use of the device.

Note 2: VDD = 90 V, Tch = 25C, L = 17.6 mH, RG = 25 , IAR = 9 A

Note 3: Repetitive rating: pulse width limited by max junction temperature

This transistor is an electrostatic-sensitive device. Handle with care.

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2SK3878
Electrical Characteristics (Ta = 25C)
Characteristic

Symbol

Typ.

Max

Unit

VGS = 30 V, VDS = 0 V

10

V (BR) GSS

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 720 V, VGS = 0 V

100

Drain cutoff current

Drain-source breakdown voltage

Min

IGSS

Gate leakage current

Drain-source breakdown voltage

Test Condition

V (BR) DSS

ID = 10 mA, VGS = 0 V

900

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Gate threshold voltage

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 4 A

1.0

1.3

Forward transfer admittance

Yfs

VDS = 15 V, ID = 4 A

3.5

7.0

Input capacitance

Ciss

2200

Reverse transfer capacitance

Crss

45

Output capacitance

Coss

190

25

65

20

120

60

34

26

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

tr

0V

ton

4.7

Turn-on time
Switching time
Fall time

tf

Turn-off time

VOUT

RL = 100

Duty <
= 1%, tw = 10 s

toff

Total gate charge

(gate-source plus gate-drain)

ID = 4 A

10 V
VGS

Qgs

Gate-drain (Miller) charge

Qgd

ns

VDD
400 V

Qg

Gate-source charge

pF

VDD
400 V, VGS = 10 V, ID = 9 A

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

Pulse drain reverse current

IDRP

27

(Note 1)

Forward voltage (diode)

VDSF

IDR = 9 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 9 A, VGS = 0 V,

1.4

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

16

Marking

TOSHIBA

K3878

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3878

ID VDS

ID VDS
20

COMMON SOURCE
Tc = 25C
PULSE TEST

COMMON SOURCE
Tc = 25C
PULSE TEST

15

10

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

10

6
5.5
5.25

4.75
2

VGS = 4.5 V

16
15

10
12

5.5

VGS = 4.5 V
0

10

DRAINSOURCE VOLTAGE VDS (V)

DRAINSOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

16

25

8
Tc = 55C

100
4

GATESOURCE VOLTAGE VGS

8
4.5
4
2.3

12

16

20

(V)

RDS (ON) ID
10
COMMON SOURCE

DRAINSOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

ID = 9 A

GATESOURCE VOLTAGE VGS

COMMON SOURCE
VDS = 20 V
PULSE TEST

Tc = 55C

100
25

12

(V)

10

1
0.1

COMMON SOURCE
Tc = 25C
PULSE TEST

16

10

Yfs ID
100

20

VDS VGS
20

COMMON SOURCE
VDS = 20 V
PULSE TEST

12

16

DRAINSOURCE VOLTAGE VDS (V)

ID VGS
20

12

10

Tc = 25C
PULSE TEST

VGS = 10 V
1

0.1

100

DRAIN CURRENT ID (A)

10

100

DRAIN CURRENT ID (A)

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2SK3878

RDS (ON) Tc

IDR VDS
100

COMMON SOURCE
VGS = 10 V
PULSE TEST

DRAIN REVERSE CURRENT IDR (A)

3
ID = 9 A
2

4.5

2.3

0
80

40

40

80

CASE TEMPERATURE

120

COMMON SOURCE
Tc = 25C
PULSE TEST

10

VGS = 0 V

3
0.1

160

10

0.4

Tc (C)

0.8

C VDS

Vth Tc
Vth (V)

1000

GATE THRESHOLD VOLTAGE

Coss
100
Crss

COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C

1
0.1

10

COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST

0
80

100

40

DRAINSOURCE VOLTAGE VDS (V)

200

500

DRAINSOURCE VOLTAGE VDS (V)

PD (W)

40

160

120

80

40

40

80

120

CASE TEMPERATURE

80

120

160

Tc (C)

DYNAMIC INPUT/OUTPUT
CHARACTERISTICS

PD Tc

DRAIN POWER DISSIPATION

CASE TEMPERATURE

160

Tc

400

(C)

VDS

300

VDS = 400 V

200

20

16

12

100

200

VGS
100

0
0

200

COMMON SOURCE
ID = 9 A
Tc = 25C
PULSE TEST

(V)

CAPACITANCE C

(pF)

Ciss

0
0

1.6

10000

10

1.2

DRAINSOURCE VOLTAGE VDS (V)

20

40

60

80

GATESOURCE VOLTAGE VGS

DRAINSOURCE ON RESISTANCE
RDS (ON) ()

0
100

TOTAL GATE CHARGE Qg (nC)

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2SK3878

rth tw

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-a)

10

Duty = 0.5
0.2

0.1

0.1
0.05
0.02

0.01

PDM

0.01

SINGLE PULSE

T
Duty = t/T
Rth (ch-c) = 0.833C/W
0.001
10

100

1m

10 m

100 m

PULSE WIDTH tw

(S)

SAFE OPERATING AREA

EAS Tch

100

1000

AVALANCHE ENERGY EAS (mJ)

DRAIN CURRENT ID (A)

ID max (PULSE) *

10

100 s *

ID max (CONTINUOUS)
1 ms *

DC OPERATION
Tc = 25C

0.1

SINGLE NONPETITIVE PULSE

Tc = 25C

Curves must be derated linearly with

10

100

1000

800

600

400

200

0
25

VDSS max

increase in temperature.
0.01
1

10

10000

50

75

100

CHANNEL TEMPERATURE (INITIAL)

125

150

Tch (C)

DRAINSOURCE VOLTAGE VDS (V)

15 V

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 17.6 mH

VDS

WAVE FORM

AS =

1
B VDSS

L I2
B

V
VDSS
DD

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2SK3878

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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