You are on page 1of 7

2N7000

SemiWell Semiconductor

Logic N-Channel MOSFET


Features

Symbol

RDS(on) (Max 5 )@VGS=10V

RDS(on) (Max 5.3 )@VGS=4.5V

3. Drain

Gate Charge (Typical 0.5nC)


Maximum Junction Temperature Range (150C)

2. Gate

General Description

1. Source

TO-92

This Power MOSFET is produced using planar DMOS technology.


And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.

Absolute Maximum Ratings


Symbol
VDSS
ID

Parameter

Value

Units

Drain to Source Voltage

60

Continuous Drain Current(@TA = 25C)

200

mA

500

mA

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

20

Total Power Dissipation Single Operation (TA=25C)

0.4

Total Power Dissipation Single Operation (TA=70C)

3.2

mW

- 55 ~ 150

300

PD
TSTG, TJ
TL

(Note 1)

Operating Junction Temperature & Storage Temperature


Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.

Thermal Characteristics
Symbol
RJA

Parameter
Thermal Resistance, Junction-to-Ambient

Value
Min.

Typ.

Max.

312.5

January, 2003. Rev. 0.

Units
C/W

1/6
Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.

2N7000

Electrical Characteristics
Symbol

( TJ = 25 C unless otherwise noted )

Parameter

Test Conditions

Min

Typ

Max

Units

60

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS/
TJ

Breakdown Voltage Temperature


coefficient

ID = 250uA, referenced to 25 C

48

mV/C

IDSS

Drain-Source Leakage Current

VDS = 60V, VGS = 0V


VDS = 60V, VGS = 0V, TJ = 125 C

1
1000

uA

Gate-Source Leakage, Forward

VGS = 20V, VDS = 0V

100

nA

Gate-Source Leakage, Reverse

VGS = -20V, VDS = 0V

-100

nA

IGSS

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

1.0

2.5

RDS(ON)

Static Drain-Source On-state


Resistance

VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA

1.55
1.9

5
5.3

Dynamic Characteristics
Ciss

Input Capacitance

20

25

Coss

Output Capacitance

11

14

Crss

Reverse Transfer Capacitance

18

2.5

15

17

44

VGS =0 V, VDS =25V, f = 1MHz

pF

Dynamic Characteristics
td(on)
tr
td(off)
tf

Turn-on Delay Time


Rise Time
Turn-off Delay Time

VDD =30V, ID =200mA, RG =50


VGS = 10 V
(Note 2,3)

Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge(Miller Charge)

VDS =30V, VGS =4.5V, ID =200mA


(Note 2,3)

ns

24

0.5

0.65

0.15

0.2

Min.

Typ.

Max.

Unit.

200

mA

1.2

nC

Source-Drain Diode Ratings and Characteristics


Symbol
IS
VSD

Parameter

Test Conditions

Maximum Continuous Diode Forward Current


Diode Forward Voltage

IS =200mA, VGS =0V

NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width 300us, Duty Cycle 2%
3. Essentially independent of operating temperature.

2/6

(Note 2)

2N7000
Fig 2. Transfer Characteristics

Fig 1. On-State Characteristics


VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V

10

10

ID, Drain Current [A]

ID, Drain Current [A]

Top :

150 C
o

Notes :
1. 250 s Pulse Test
2. TC = 25

-55 C

25 C

Notes :
1. VDS = 10V
2. 250 s Pulse Test

-1

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Fig 4. On State Current vs.


Allowable Case Temperature

Fig 3. On Resistance Variation vs.


Drain Current and Gate Voltage

2.5

IDR, Reverse Drain Current [A]

RDS(ON),
Drain-Source On-Resistance [m ]

3.0

VGS = 4.5V
VGS = 10V

2.0

1.5

10

150
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test

Note : TJ = 25

1.0
0.0

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10

0.2

0.4

ID, Drain Current [A]

0.8

1.0

1.2

1.4

Fig 6. Gate Charge Characteristics

Fig 5. Capacitance Characteristics


50

12

VGS, Gate-Source Voltage [V]

Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd

40

Capacitance [pF]

0.6

VSD, Source-Drain voltage [V]

Notes :
1. VGS = 0V
2. f=1MHz

30

Ciss
20

Coss
10

Crss

10

VDS = 30V
8

VDS = 48V
6

2
Note : ID = 200 mA

10

15

20

VDS, Drain-Source Voltage [V]

25

30

0
0.0

0.2

0.4

0.6

0.8

1.0

1.2

QG, Total Gate Charge [nC]

3/6

2N7000
Fig 8. On-Resistance Variation
vs. Junction Temperature

Fig 7. Breakdown Voltage Variation


vs. Junction Temperature
2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100
o

TJ, Junction Temperature [ C]

4/6

RDS(ON), (Normalized)
Drain-Source On-Resistance

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

1.2

150

200

2.0

1.5

1.0

0.5

0.0
-100

Notes :
1. VGS = 10 V
2. ID = 500 mA

-50

50

100
o

TJ, Junction Temperature [ C]

150

200

2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms

VGS

Same Type
as DUT

50K

Qg

200nF

12V

V
4.5V

300nF

VDS

VGS

Qgs

Qgd

DUT
1mA

Charge
Fig 10. Switching Time Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD
( 0.5 rated V DS )

10V
V
Pulse
Generator

RG

DUT

Vin

10%

tr

td(on)
t on

td(off)

tf
t off

5/6

2N7000
TO-92 Package Dimension
Dim.

mm
Min.

Inch

Typ.

Max.

Min.

4.2

Typ.
0.165

3.7

0.146

4.43

4.83

0.174

0.190

14.07

14.87

0.554

0.585

E
F

0.4
4.43

4.83

0.016
0.174

0.190

0.45

0.017

2.54

0.100

2.54

0.100

0.33

0.48

0.013

0.019

A
E
B
F

G
1
D

2
3

6/6

Max.

1. Source
2. Gate
3. Drain

This datasheet has been downloaded from:


www.EEworld.com.cn

Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn

All Datasheets Cannot Be Modified Without Permission


Copyright Each Manufacturing Company