ME20P03/ME20P03-G

P- Channel 30-V (D-S) MOSFET

GENERAL DESCRIPTION

FEATURES

The ME20P03 is the P-Channel logic enhancement mode power field

RDS(ON)32m@VGS=-10V

effect transistors are produced using high cell density, DMOS trench

RDS(ON)42m@VGS=-4.5V

technology. This high density process is especially tailored to

Super high density cell design for extremely low RDS(ON)

minimize on-state resistance. These devices are particularly suited

Exceptional on-resistance and maximum DC current

for low voltage application such as cellular phone and notebook

capability

computer power management and other battery powered circuits ,

APPLICATIONS

and low in-line power loss are needed in a very small outline surface

Power Management in Note book

DC/DC Converter

mount package.

PIN

Load Switch
LCD Display inverter

CONFIGURATION
(TO-252-3L)
Top View

e Ordering Information: ME20P03 (Pb-free)

ME20P03-G (Green product-Halogen free )

Absolute Maximum Ratings (TC=25 Unless Otherwise Noted)

Symbol

Maximum Ratings

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

20

Parameter

Continuous Drain Current*

TC=25
TC=70

Pulsed Drain Current

Maximum Power Dissipation*

ID
IDM

TC=25
TC=70

Operating Junction Temperature

Thermal Resistance-Junction to Case*

PD

-27.6
-25.5
-110
39
25

A
A
W

TJ

-55 to 150

RJC

3.2

/W

*The device mounted on 1in2 FR4 board with 2 oz copper

Mar, 2012-Ver1.3

01

ME20P03/ME20P03-G
P- Channel 30-V (D-S) MOSFET
Electrical Characteristics (TC=25 Unless Otherwise Specified)
Symbol Parameter

Limit

Min

VGS=0V, ID=-250A

-30
-1

Typ

Max

Unit

STATIC
V(BR)DSS

Drain-Source Breakdown Voltage

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250A

IGSS

Gate Leakage Current

IDSS

Zero Gate Voltage Drain Current

RDS(ON)

Drain-Source On-State Resistancea

VSD

Diode Forward Voltage

V
-3

VDS=0V, VGS=20V

100

nA

VDS=-24V, VGS=0V

-1

VGS=-10V, ID= -18A

27

32

VGS=-4.5V, ID= -10A

35

42

-0.7

-1.2

IS=-1A, VGS=0V

m
V

DYNAMIC
Qg

Total Gate Charge(10V)

Qg

Total Gate Charge(4.5V)

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

4.2

Ciss

Input capacitance

804

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

40

td(on)
tr
td(off)
tf

Turn-On Delay Time

37

Turn-On Rise Time

Turn-Off Delay Time

21
VDS=-15V, VGS=-4.5V, ID=-18A

VDS=-15V, VGS=0V, F=1MHz

VDS=-15V, RL =15
ID=-1A, VGEN=-10V, RG=3

Turn-On Fall Time

10
5

123

19
54

nC

pF

ns

Notes:a. Pulse test; pulse width 300us, duty cycle 2%

b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.

Mar, 2012-Ver1.3

02

ME20P03/ME20P03-G
P- Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted)

Mar, 2012-Ver1.3

03

ME20P03/ME20P03-G
P- Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted)

Mar, 2012-Ver1.3

04

ME20P03/ME20P03-G
P- Channel 30-V (D-S) MOSFET

TO-252 Package Outline

SYMBOL

MIN

MAX

2.10

2.50

0.40

0.90

0.40

0.90

5.30

6.30

D1

2.20

2.90

6.30

6.75

E1

4.80

5.50

L1

0.90

1.80

L2

0.50

1.10

L3

0.00

0.20

8.90

10.40

Mar, 2012-Ver1.3

2.30 BSC

05