Annexure II

Three Assignments: Each of marks 120

Assignment I
1. a) Draw the block diagram of superheterodyne receiver and explain the function of each
block. (8M)
b) Convert ( BCDE)16 = ( )2 = ( )8 = ( )10
(6M)
c) Subtract =

(57)10

from (43)10 using 2s compliment form. (6M)

2. a) Simplify the following Boolean expressions: (8M)

Y = (ABC) + ABC +ABC+ABC
Y = (AB + AC)(BC+BC)(ABC)
b) Draw the logic circuit of a full adder and also write its truth table with sum and carry
expressions. (6M)
c) Realize the expression F = [X + Y (Z+Y)] using only NAND- Gates (6M)
3. a) Draw the half adder circuit, with the truth table. (8M)
b) Explain the logic circuit of XOR and XNOR gates with truth table. (8M)
c) Realize the following expression using NOR gate. Y=A(B+C)
(4M)
4. a) Explain need for modulation. (4M)
b) Write the decimal equivalent of (10AB)H
(4M)
c) Derive an expression for the instantaneous value of an AM signal in terms of carrier and
sideband frequencies. (8M)
5. a) Realize an AND logic gate and OR logic gate using diodes
b) Explain the operation of NOT gate using a transistor
c) Write the symbol, truth table and output expression for I) OR ii) NAND iii) Ex-OR gate
6. a) Discuss the performance of zener diode, in terms of the source & load effects. (8M)
b) Draw the circuit of a bridge rectifier and explain its working. (6M)
c) Draw the circuit of a half wave rectifier and explain its working with necessary
waveforms. Derive expression for Idc and efficiency. What are the merits of HWR? (6M)
7. a) Bring out merits and demerits of FM and AM. (6M)
b) Define FM with necessary waveforms. Derive the formula for the instantaneous value of
FM voltage and define the modulation index. (8M)
c) Convert ( 2AC5 . D )H to decimal , octal and binary (6M)
8. a) What is Hall effect? Obtain the expression for the Hall effect. (8M)
b) Explain the significance of diffusion current in semiconductor? (6M)
c) What is meant by the potential barrier across a junction? What is its significance? (6M)

Assignment II
1. a) What factors cause instability of Q-point? Explain it. (8M)
b) Explain the circuit operation and analysis of voltage divider bias. (8M)
c) What is the meaning of transistor biasing? (4M)
2. a) Draw and explain the input and output characteristics of PNP transistor in common emitter
configuration. (8M)
b) Given Ie = 2.5mA, = 0.98 and Icbo= 10A, calculate Ib and Ic. (6M)
c) Obtain relation between the dc and dc. (6M)
3. a) Explain the input and output characteristics for CE configuration BJT circuit. Discuss each
region on the characteristics. (8M)
b) Compare various BJT circuit configurations. (6M)
c) Draw a block diagram of an un-biased n-p-n transistor. Identify each part of the device and
show the depletion regions and barrier voltages. (6M)
4. a) Explain thermal runaway in case of BJT. (6M)
b) Compare base bias, collector to base bias and voltage divider bias with regard to stability
of the transistor collector voltage with spread in hFE value. (10M)
c) Show transistor can be used as amplifier. (4M)
5. a) Draw the input and output characteristic curve of a transistor in common base
configuration. Explain the nature and shape. (8M)
b) Compare different types of biasing methods. (4M)
c) List the transistor biasing circuits. Explain with neat circuit explain the operation of Base
bias. (8M)
6. a) Define for an op-amp (I) CMRR (ii) output offset voltage (iii) slew rate (iv) virtual ground
(v) input bias current (6M)
b) Show that internal block schematic of op-amp mentioning the role of each stage. (8M)
c) Mention at least five parameters expected of an operational amplifier? What their ideal
expected values? What are their practical values for a 741 op-amp. (6M)
7. a) List characteristics of an ideal op amp. (4M)
b) Define the terms slew rate and CMRR of an opamp and mention their typical values for
741 opamp. (6M)
c) Draw the circuits of inverting amplifier and non- inverting amplifiers. Obtain the output
expression for voltage gain. (6M)
d) Explain how op-amp can be configured as an adder and integrator? Obtain the output
expressions for both. (4M)
8. a) Explain an op-amp follower. What are its special features and where it is used? (8M)
b) Show how op-amp can be used as subtractor. Obtain an expression for its output. (6M)
c) Calculate the output voltage of a three input summing amplifier given:
R1 =200KO, R2 =250KO, R3 =500KO, Rf =1MO, V1= -2V, V2= +2V, V3= +1V (6M)

Assignment III
1. a) Draw the equivalent circuit of a UJT and mention its applications. (6M)
b) What are the applications of SCR.? (6M)
c) Draw the drain characteristics of n-channel JFET and explain it. (8M)
2. a) With a neat diagram, explain the operation of Colpitts oscillator. (10M)
b) Explain the operation of single stage RC coupled amplifier and draw its frequency
response. (10M)
3. a) Sketch and explain the V-I characteristics of SCR. (6M)
b) Explain the P-channel JFET drain characteristics. (6M)
c) Explain the JFET as an amplifier. (8M)
4. a) Is continuous gate current necessary to switch the SCR on? Justify. How the SCR is
switched off? (6M)
b) Illustrate SCR as a controlled rectifier. (6M)
c) Draw and explain RC phase shift oscillator. (8M)
5. a) Discuss the effect of negative feedback on bandwidth and voltage gain of an amplifier
(8M)
b) Draw the block diagram of CRO and explain the function of each stage. (12M)
6. a) Draw the circuit diagram to obtain the drain characteristics for n-channel JFET. Thus draw
drain characteristics and explain them. (10M)
b) Sketch typical SCR forward and reverse characteristics. Identify all regions of
characteristics and all important current and voltage levels. (10M)
7. a) Explain the operation of SCR using two transistor equivalent circuit. (10M)
b) Draw the circuit of two stage RC coupled CE amplifier.Explain significance of each
component. Plot its frequency response (10M)
8. a) With neat circuit diagram and frequency response, explain the operation of single stage
common-emitter amplifier. (10M)
b) Draw the circuit of transistor RC phase shift oscillator and explain the significance of
each component .(10M)