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Transistor Amplifiers
On completion of this chapter you should be able to predict the behaviour of given transistor
amplifier circuits by using equations and/or equivalent circuits that represent the transistors
a.c. parameters.
2 BJT Parameters
You should already be familiar with the d.c. parameters such as input
resistance (RIN), output resistance (ROUT), and current gain (hFE), and
their relationship to the transistors output characteristics. In addition,
an a.c. amplifier circuit may be redrawn in terms of the appearance of
the circuit to a.c. signals. This is illustrated in Fig. 1.
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68
VCC
C
C
RC
RB
RS
b
RS
b
RC
RL
RB Vbe
RL
Vce
VS
Vce
VS
Vbe
RL
(b) a.c. equivalent
(a) circuit
Fig. 1
The a.c. equivalent circuit of Fig. 1(b) is useful in that the current flow
paths of the a.c. signal and the effective a.c. load can be appreciated,
but in order to analyse the complete amplifier circuit the load lines
would still need to be drawn on the characteristics. What is required is
a simple network representation of the transistor itself, which can then
be inserted into Fig. l(b) in place of the transistor symbol.
There are a variety of transistor parameters that may be used in
this way. Amongst these are Z-parameters, Y-parameters, hybrid
parameters, and h-parameters. For the analysis of small-signal audio
frequency amplifiers the use of h-parameters is the most convenient,
and will be the method adopted here.
Provided that the transistor is correctly biased and the input signal is
sufficiently small so as to cause excursions of currents and voltages
that remain within the linear portions of the characteristics, then the
transistor itself may be considered as a simple four-terminal network as
shown in Fig. 2.
i2
i1
1
Linear
network
Fig. 2
B hr ;
C hf ;
D ho siemen
1
ohm
i1
hr: is the reverse voltage feedback ratio with the input open-circuited
to a.c.
Thus, hr
1
2
i2
siemen
v2
hf: is the forward current gain with the output short-circuited to a.c.
Thus, h f
i2
i1
Notes:
1 In modern transistors hr is very small (104) so this parameter
will be ignored.
2 Just as conductance G 1/R siemen, so admittance, Y 1/Z siemen.
3 The h-parameters will vary with temperature, ageing and frequency.
For the analysis at this level we shall consider that they remain
constant.
4 Since the transistor is a current-operated device it is convenient
to represent its collector circuit as a current generator with its
internal impedance (1/ho) in parallel.
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70
b
i1
hie
RS
i2
hfei1
RB
1/hoe
RL
Fig. 3
h f hF ;
1 / ho ROUT
3 h-parameter Equations
Ignoring hr the original two equations may be written as:
1 hi i1...........[1]
i2 h f i1 ho 2 [2]
and using these equations the following results can be obtained.
Amplifier current gain, Ai
hf
(1)
1 ho RL
h f RL
hi (1 ho RL )
Ai RL
hi
(2)
Worked Example 1
Q
For the amplifier circuit of Fig. 4, (a) sketch the h-parameter equivalent circuit and, (b) determine the
amplifier current and voltage gains using (i) network analysis, and (ii) h-parameter equations.
The h-parameters are hie 1.5 k; hfe 90; hoe 50 S
VCC 12 V
RC
2.2 k
RB
68 k
RS
VS
RL
600
10 k
100 mV
rms
Fig. 4
A
hie 1.5 k; hfe 90; hoe 50 106 S
(a) The h-parameter circuit will be as shown in Fig. 5.
iS
i2
i1
iL
90i
RS
600
1
1/hoe
20 k
RB
hie
68 k 1.5 k
RC
2.2 k
0.1 V
rms
Rin
RL
Fig. 5
(i)
1/hoe
RC RL
2.2 10
106
20 k; RL
ohm
k 1.8 k
R
R
2.2 10
50
C
L
hie RB
68 1.5
1.47 k
hie RB
68 1.5
Rin
1.47
v s volt
0.1 V
Rs Rin
1.47 0.6
v1 71 mV
i1
v1
71 103
amp 47.3 A
hie
1 .5 1 03
20
1 / hoe
90i1 amp
4.26
20 1.8
1 / hoe RL
i2 3.91 mA
RL
10 k
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(ii)
Ai
i2
3.91 103
82.7 Ans
i1
47.3 106
Av
v2
7.04
99 Ans
v1 71 103
Ai
90
hfe
1 hoe RL
1 (50 106 1800 )
Ai
90
82.6 Ans
1.09
Av
Ai RL
82.6 1.8
1.5
hie
Av 99 Ans
Thus, allowing for the cumulation of rounding errors in part (i), the results from
the equations agree with those from the network analysis.
The actual current that will flow in the load of the previous example
will not in fact be i2, but only a fraction of that, and is shown in Fig. 5
as iL. Thus the power delivered to the external load will be less than
the maximum possible. This problem may be minimised by the use of
a matching transformer connected between the load and the amplifier
circuit output terminals.
Worked Example 2
Q
The transistor used in the circuit of Fig. 6 has the following h-parameters hie 2 k; hoe 60 S;
hfe 100. Calculate (a) the amplifier current gain, (b) the actual power delivered to the external load,
and (c) the turns ratio required for a matching transformer in order to maximise the power delivered
to the load.
VCC
RC
4.7 k
R1
120 k
RS
600
R2
20 k
RE
1 k
VS
0.2 Vp-p
Fig. 6
A
hie 2 k; hoe 60 106 S; hfe 100
RL
5 k
i1
iS
i2
iL
100i1
Rs
600
R1
120 k
R2
20 k
hie
2 k
1/hoe
16.7 k
RC
4.7 k
S
0.2 Vp-p
Rin
RL
Fig. 7
Input circuit:
1
1
1
1
1
1
1
siemen
mS
Rin
R1
R2
hie
120 20 2
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1
1 6 60
mS
Rin
120
120
Rin
1.79
vs
200 mV pk-pk
Rs Rin
0.6 1.79
v1 150 mV pk-pk
i1
Output circuit: RL
v1
0.15
75 A pk-pk
amp
hie
2000
RC RL
4.7 5
k
RC RL
4.7 5
RL 2.42 k
100i1 7.5 mA pk-pk
i2
1 / hoe
16.7
100i1
7.5 mA pk-pk
1 / hoe RL
16.7 2.42
i2 6.55 mA pk-pk
Ai
i2
6.55 103
i1
75 106
Ai 87.3 Ans
Check: Ai
(b) iL
100
hfe
87.3
1 hoe RL
1 (60 106 2420 )
RC
4.7
i2
6.55 mA pk-pk
RC RL
9.7
iL 3.17 mA pk-pk
PL I L2RL watt, where I L is the r.m.s. value
so, I L
iL
3.17
mA 1.12 mA
2 2
2 2
RL
5 k
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Np
Ns
Np
Ns
16.7 4.7
k 3.67 k
16 .7 4 .7
N p2
Ns
RL ohm
Rp
RL
3.67
5
0.856 : 1 Ans
RL
gm rdsVi volt
RL rds
Vo
g r R
A m ds L
Vi
RL rds
(3)
(4)
d D
rds
Vi gmrdsVi
V0
Fig. 8
RL
Worked Example 3
Q
The FET used in the amplifier circuit of Fig. 9 has parameter values of rds 80 k and gm 4 mS.
Calculate (a) the amplifier voltage gain, and (b) the effective input resistance of the amplifier circuit.
VDD
R1
56 k
RD
2 k
RG
1 M
Vi
RS
1 k
R2
4.6 k
V0
RL
3 k
Fig. 9
A
rds 80 103 ; gm 4 103 S; RL 3 k
RD RL
32
ohm
k
RD RL
5
RL 1.2 k
gmrds RL
4 103 80 103 1.2 103 384 000
03
81 200
rds R L
80 103 1.2 10
R1 R2
56 4.7
ohm 106
R1 R2
60.7
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76
G
RG
Rin
R1
R2
Fig. 10
Thus, the inherently high input resistance of the FET is preserved in the amplifier
circuit by the inclusion of RG.
5 Practical Implications
It should be borne in mind that when designing an amplifier circuit, the
results of the equations as shown in this chapter give only theoretical
answers. If an amplifier circuit thus analysed is then constructed and
tested, the actual gain figures achieved may well be different to those
predicted. There are a number of reasons for this: the resistors will
have actual values depending upon how close to tolerance they are,
and the transistor parameters cannot be guaranteed to be exactly those
quoted by the manufacturer. Indeed, manufacturers recognise this by
quoting minimum, maximum and typical values for such parameters
as hf. In calculations the typical value is normally used. Thus the
mathematical analysis should be considered as only the first step in the
design process, and component values will then need to be adjusted in
the light of practical tests.
Summary of Equations
BJT amplifier: Current gain, Ai
hf
1 ho RL
Ai RL
hi
Power gain, Ap Ai Av
Voltage gain, Av
gm rds RL
rds RL
Assignment Questions
1
VCC
3.9 k
56 k
VCC
4.7 k
7.5 k
500
4.7 k
120 k
Fig. 13
V0
0.25 V V1
pk-pk
Fig. 11
VDD 30 V
1.2 M
V1
10 k
56 k
VDD
15 k
15 k
3V
pk-pk
4.7 k
4.7 k
Fig. 14
6
120 V1
20 k
5 k
V1
1.2 M
1 M
6.8 k
RS
(a)
i1
Fig. 12
600 82 k
10 k
50i1
3 k
V1
(b)
Fig. 15
25 k 4.7 k 10 k
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78
Calculate the minimum value of hfe required for the transistor in Fig. 16 in order that a power
of 3.5 mW is dissipated in the 10 k load resistor. The values for hie and hoe are 4 k and 50 S
respectively.
VCC
100 k
0.25 V
pk-pk
4.7 k
600
10 k
Fig.16
A
The h-parameter equivalent circuit is shown in Fig. 17. Since RB hie then the
shunting effect of RB will be negligible, and it has therefore been omitted from
the calculation.
hie 4000 ; hoe 50 106 S; Vi 0.25 V pk-pk; Po 3.5 103 W
i1
hfei1
VS
RB
V1 100 k
1/hoe
20 k
hie
4 k
V2
RC
4.7 k
0.25 V
pk-pk
Fig. 17
P0
V22
watt so V2 P0 RL volt 3.5 103 10 4
RL
V2 5.916 V
V1
4
hie
Vs volt pk-pk
0.25
4.6
hie Rs
V1 0.21 7V pk-pk
so, V1
0.217
7
76.8mV r.m.s.
2 2
V2
5.916
Voltage gain required, Av V 0.768
1
Av 77
RL
10 k
Av
so, hfe
1/hoe RL
47
hfe RL
where RL
3.2 k
1 / hoe RL
14.7
hie (1 hoe RL )
Av {hie (1 hoe RL )} 77{4(1 50 106 3.2 103 )}
3.2
RL
The FET in the circuit of Fig. 18 has rds 50 k and gm 5 mS. Determine the value of the output
voltage, V2, and the power developed in the 25 k load.
A
rds 50 103 ; gm 5 103 S
VDD 40 V
39 k
100 k
V2
V1
4V
pk-pk
25 k
2 M
2.2 k
Fig. 18
RL
25 3.9
RD RL
ohm
15.2 k
RD RL
25 3.9
Now, since rds is NOT RL , then the approximate equation for voltage gain
should not be used, hence
Av
gmrds RL
1.5 103 50 103 15.2 103
rds RL
65.2
Av 17.48
Thus, V2 17.48 4 V pk-pk 70 V pk-pk
so, V2 24.75 V Ans
P0
V22
24.752
watt
RL
25 103
P0 0.2 mW Ans
Note that had the approximate equation Av gm RL been used in this case an
error of about 22% would have resulted in the value for Av. This would be an
unacceptably large error.
The approximate form of the equation should be used only when rds is at least
10 times larger than RL .
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