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APPLICATION NOTE
INTRODUCTION
Ip
Io
fl1
fl2
Np
Ns
Vexcitation
Vo
fm
AN1680/D
primary and leakage coils. When the ON periods stops, the
MOSFET opens and interrupts its current. Since no current
discontinuities can take place in an inductor, both magnetic
fields collapse and the voltage across the inductances
reverses in an attempt to keep the amps-turn constant: Lp
energy is thus coupled to the secondary and gives birth to
the output current charge. Since Lleakage cannot find a
circulating path, it pulls-up 2 the drain voltage until Dclamp
starts to conduct and protects the switcher at a maximum
theoretical level of: Vmains + Vclamp = 650 V. Figure 2. (b)
shows the results of an INTUSOFTs IsSpice4 (San Pedro,
CA) simulations. When all the leakage energy is released, a
short parasitic oscillation takes place involving Lleakage and
all the parasitic capacitive elements present in the circuit
(transformers primary capacitance, MOSFETs Coss etc.)
MC33374
Vclamp
250 V
R6
3.6
C1
50 mF
C2
1 mF
C4
100 n
R7
75 k
13
Rp
100 m
17
Aux
16
D1
1N4146
R8
15 k
C5
10 mF
Lleak
4 mH
MOS
GND
VDCmains
330 V
CTL
VCC
FB
L3
5 mF
UP TI
Lp
250 mH
Dclamp
Int
MC
3337X
X2
MBR20100
10
C3
150 mF
Int
R12
270
Aux
12
C6
10 nF
14
MOC8101
15
UP TI
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2
Rload
5
Vout
AN1680/D
700
500
VDS
CLIPPING EFFECT
X = 212.29U
Y = 650.84
Fosc +
300
2@p@
Lleak @ Clump
100
100
210.20U
211.20U
212.20U
213.20U
214.20U
Figure 2. (b) The Drain is Safely Clipped Below 700 V at High Mains
Diverting the Primary Current
N @ (Vout ) Vf sec)
,
Lp
L
@ Ip
leak
,
V
* (Vout ) Vf sec) @ N
clamp
leak
.
V
clamp
*1
(V )Vf)@N
out
Iprimary
Ip
Ipx
Vin/Lp
Vo @ N
Lp
ILleak
Iprimary
ILleak
Isecondary
ton
Vclamp * Vo @ N
L
leak
Dt
Figure 2. (c) Waveforms at Turn-off: the Leakage Coil Prevents an Immediate Transfer
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AN1680/D
30
x = 202.37U
y = 33.600
VCC + Vz
Isec. peak
VO.N
Ip = 2.73 A
20
10
Vdrain-source
Ileakage
Iprimary
0
Vout @ turn-off = 10 V
200.60U
201.79U
Ip
202.98U
204.17U
205.37U
Izener diode
(Fc * 1) @ V
z(Nom) ,
Rd +
P
PK(Nom)
For the zener diode, the first part is easily deducted from
Figure 3. (b):
V @ Ip Dt
Pavg1 + z
@
2
T
I zener(t) + Ip @ Dt * t,
Dt
Vz @ Ip 2 @ L
@F
leak
,
P avg1 +
2 @ (Vz * (Vout ) Vfsec) @ N)
3Dt@ T, T
Vout
P avg2 +
Cout
Lp
4
I 2zener(t).dt or I zenerRMS + Ip @
Dclamp
1
T
D1
N:1
DCrail
Dt
Rd @ Ip 2 @ F @ Dt.
3
R1
I zenerAVG +
Ip @ Dt @ F .
2
Lleak
Rd + dVf
dId
Ip 2 @ L
@ F @ (V z ) 0.66 @ Rd @ Ip)
leak
2 @ (V z * N @ (V out ) Vf sec))
Ip 2 @ L
@ F @ (V ) 0.66 @ Rd @ Ip)
leak
Ip
f
P
+
cond_diode
2 @ (V z * N @ (V out ) Vf sec))
P
Drv
cond_zener
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AN1680/D
a 180 V zener diode, then the series diode starts to clip at
605 V. However, because the injection time into the
low-doped N-region takes about 50 ns, the dynamic
resistance of the MUR160 gradually drops to its nominal
value, accordingly generating an overshoot upon the drain.
Measurements have to be carried upon the final board to
confirm the safety of the final drain level.
14
R7
15 k
13
9
D4
1N4148
LI1
58 m
16
10
MC33363
Vaux
R5
110 k
13
11
10
Aux
Vdrain
12
Rload
9.8
6
1
C10
470 mF
Lp
3.56 M
Vout
17
2
12
X1
MC33363
VDCmains
320
Aux
D1
1N5821
R1
3.5
Dclamp
1N4937
10
Cclamp
1 nF
test
Overvoltage Protect.
Vout.N
R8
4.7 k
Ip
11
20
C2
10 mF
C4
7
100 nF
R6
24 k
16
R10
921
C6
C5
820 p 100 nF
Dt
Ip(t) + Ip @ Dt * t.
Dt
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AN1680/D
You calculate the energy by integrating over time the
cross-over area between current and voltage:
Dt
E +
T
V
+ 1 @ Vout @ N ) 1 @
clamp
2
2
Vout
P
+1@ V
@ Ip @ Dt @ F
clamp
clamp
2
.
2@V
@ (V
* (Vout ) Vf sec) @ N)
clamp
clamp
L
@ Ip 2 @ F
leak
clamp
V
ripple
V
clamp
@F@R
clamp
C
+ Ip @
RMS clamp
clamp
@L
leak
@ Ip 2 @ F
@ N2 ) 2 @ R
BV
DSS
.
P + 1 @ Ip 2 @ L
@F@
T
leak
2
* (Vout ) Vf sec) @ N
BV
DSS
3Dt@ T
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AN1680/D
V clamp (Ip)
1000
500
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AN1680/D
The following ON Semiconductor references can be used as active clipping elements:
Reference
1N5953B
150
1.5
98 W @ 1 ms
1N5955B
180
1.5
98 W @ 1 ms
1N5383B
150
180 W @ 8.3 ms
1N5386B
180
180 W @ 8.3 ms
1N5388B
200
180 W @ 8.3 ms
P6KE150A
150
600 W @ 1 ms
P6KE180A
180
600 W @ 1 ms
P6KE200A
200
600 W @ 1 ms
1.5KE150A
150
1.5 kW @ 1 ms
1.5KE180A
180
1.5 kW @ 1 ms
1.5KE200A
200
1.5 kW @ 1 ms
Depending on the dVDS/dt slope and maximum reverse voltage conditions, the following MOTOROLA references can be used:
Reference
VRRM
Ton (typical)
IF max
MUR160
600 V
50 ns
3A
MUR100E
1000 V
25 ns
3A
1N4937
600 V
200 ns
1A
MSR860*
600 V
100 ns
8A
MSRB860-1*
600 V
100 ns
8A
Conclusion
at:
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AN1680/D
Notes
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AN1680/D
Notes
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AN1680/D
Notes
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AN1680/D
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