Professional Documents
Culture Documents
Data Sheet
March 1999
18A, 200V
Ordering Information
PACKAGE
1584.3
Features
PART NUMBER
File Number
rDS(ON) = 0.180
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334, Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
BRAND
D
IRF240
TO-204AE
IRF240
Packaging
JEDEC TO-204AE
TOP VIEW
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRF240
Absolute Maximum Ratings
IRF240
200
200
18
11
72
20
125
1.0
580
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
MIN
TYP
MAX
UNITS
PARAMETER
SYMBOL
BVDSS
200
VGS(TH)
2.0
4.0
25
250
18
IDSS
TEST CONDITIONS
ID(ON)
IGSS
rDS(ON)
gfs
tD(ON)
Rise Time
tr
100
nA
0.14
0.180
6.7
9.0
16
30
ns
27
60
ns
40
80
ns
31
60
ns
43
60
nC
nC
27
nC
1275
pF
tD(OFF)
Fall Time
tf
Qg
Qgs
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
500
pF
Reverse-Transfer Capacitance
CRSS
160
pF
5.0
nH
12.5
nH
1.0
oC/W
30
oC/W
LD
LS
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S
RJC
RJA
IRF240
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
ISM
MIN
TYP
MAX
UNITS
18
72
2.0
650
ns
4.1
VSD
trr
QRR
NOTES:
2. Pulse Test: Pulse width 300s, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 2.7mH, RG = 25, peak IAS = 9A. See Figures 15 and 16.
1.0
0.8
0.6
0.4
0.2
0
16
12
0
0
50
100
25
150
50
75
125
100
150
1.0
ZJC, THERMAL IMPEDANCE
1.2
0.5
0.2
PDM
0.1
0.1
0.05
t1
t2 t2
0.02
0.01
0.01
10-5
NOTES:
DUTY FACTOR: D = t1/t2
PER UNIT BASE =
RJC = 1.0oCW
TJM - TC = PDM x ZJC (t)
SINGLE PULSE
10-4
10-3
10-2
0.1
10
IRF240
Typical Performance Curves
(Continued)
100
40
10V
8V
10s
100s
9V
10
1ms
OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
10ms
100ms
DC
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1.0
32
7V
24
16
VGS = 6V
5V
4V
102
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
103
10
20
30
40
VDS , DRAIN TO SOURCE VOLTAGE (V)
40
40
32
24
TJ = -55oC
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 9V
VGS = 8V
50
VGS = 7V
16
VGS = 6V
VGS = 5V
TJ = 25oC
32
TJ = 125oC
24
VDS > ID(ON) x RDS(ON)MAX
80s PULSE TEST
16
VGS = 4V
0
1
2
3
4
VDS , DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
VSD , GATE TO SOURCE VOLTAGE (V)
10
0.5
2.5
ON RESISTANCE ()
ID = 18A
0.4
VGS = 10V
0.3
0.2
VGS = 20V
0.1
VGS = 10V
2.0
1.5
1.0
0.5
0
0
20
60
40
ID , DRAIN CURRENT (A)
80
100
0
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
160
IRF240
Typical Performance Curves
(Continued)
2000
ID = 250A
1.15
1800
C, CAPACITANCE (pF)
1.25
1.05
0.95
0.85
1200
CISS
800
COSS
CRSS
400
0.75
-40
40
80
120
160
10
20
30
40
VDS , DRAIN TO SOURCE VOLTAGE (V)
19.0
50
15.2
11.4
TJ = 125oC
7.6
3.8
20
10
0
8
16
24
ID , DRAIN CURRENT (A)
32
40
TJ = 150oC
TJ = 25oC
1
0
0.4
0.8
1.2
1.6
VSD , SOURCE TO DRAIN VOLTAGE (V)
20
VGS, GATE TO SOURCE VOLTAGE (V)
50
ID = 18A
16
VDS = 40V
12
VDS = 100V
VDS = 160V
0
0
12
24
36
48
60
2.0
IRF240
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
RG
VGS
VDS
IAS
VDD
VDD
DUT
tP
0V
IAS
0
0.01
tAV
tON
tOFF
td(ON)
td(OFF)
tf
tr
VDS
RL
90%
90%
RG
VDD
10%
10%
90%
DUT
VGS
VGS
10%
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0.2F
50%
PULSE WIDTH
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50k
Qgd
0.3F
VGS
Qgs
D
VDS
DUT
Ig(REF)
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
Ig(REF)
0
IRF240
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