International Journal on Computational Science & Applications (IJCSA) Vol.5, No.

4,August 2015

AN APPROACH TO DECREASE DIMENTIONS OF LOGICAL ELEMENTS BASED ON BIPOLAR TRANSISTOR

E.L.Pankratov1,3 and E.A.Bulaeva1,2
1

Nizhny Novgorod State University,23 Gagarin avenue,Nizhny Novgorod,603950,Russia

2
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950,Russia
3
Nizhny Novgorod Academy of the Ministry of Internal Affairs of Russia,3 Ankudinovskoe Shosse, Nizhny Novgorod, 603950, Russia

ABSTRACT
In this paper we consider manufacturing logical elements with function AND-NOT based on bipolar transistors. Based on recently considered approach to decrease dimensions of solid state electronic devices
with the same time increasing of their performance we introduce an approach to decrease dimensions of
transistors and p-n-junctions, which became a part of the logical element. Framework the approach a heterostructure with required configuration should be manufactured. After the manufacture required areas of
the heterostructures should be doped by diffusion or ion implantation. The doping should be finished by
optimized annealing of dopant and/or radiation defects.

KEYWORDS
Transistor-transistor logic; optimization of manufacturing; decreasing of dimensions of transistor; analytical approach for modelling

1.INTRODUCTION
In the present time solid state electronic is intensively elaborating. Framework the elaborating one
can find increasing of integrating rate of elements of integrated circuits (p-n-junctions, their systems et al) with decreasing of their dimensions [1-7]. To ways of decreasing of dimensions of
elements of integrated circuits are using laser and microwave types of annealing of dopants
and/or radiation defects [8-16]. Another way to decrease the dimensions is using inhomogeneity
of doped by diffusion or ion implantation heterostructure [1-3,17]. Using the second way leads to
necessity to optimize annealing of dopants and/or radiation defects [17]. It is known, that radiation processing of materials leads to changing of distributions of concentrations of dopants [18].
In this situation radiation processing attracted an interest to decrease of dimensions of elements of
integrated circuits [17,18].
In the next paragraph we introduce an analytical approach to analyze mass transport during technological process. The approach gives a possibility to generalize recently considered in literature
several limiting cases. Framework the approach we consider mass transport in a multilayer structures without crosslinking solutions on the interfaces between the layers. The approach also gives
a possibility to optimize technological processes.
DOI:10.5121/ijcsa.2015.5401

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

Fig. 1a. Structure of logical element based on bipolar transistor. View from top. Black marked transistors
and p-n-junction manufactured by using doping of appropriate sections of the epitaxial layer. Dimensions
of these devices are decreased. Transistor 1 is a multiemitter transistor. Emitters have been marked by using
letter E. The index indicates their number in the multiemitter transistor. D1 and D2 mean dopants of p and n
types in p-n-junction. Red marked resistors (Ri) and wires have no decreasing of their dimensions
Sections
Epitaxial layer
Substrate

Fig. 1b. Heterostructure with a substrate and an epitaxial layer. Some sections have been manufactured by
using another materials in the epitaxial layer

2.METHOD OF SOLUTION
In this paper we consider a heterostructure with a substrate and an epitaxial layer (see Figs. 1).
Epitaxial layer includes into itself several sections manufactured by using another materials (see
Figs. 1). The sections have been doped by diffusion or by ion implantation to generate required
type of conductivity (p or n) during manufacturing transistors and p-n- junction. After that annealing of dopant and/or radiation defects should be considered. Main aim of our paper is determination of conditions, which correspond to decreasing of the considered elements and increasing
switching time of p-n-junctions by analysis of redistribution of dopant and radiation defects during their annealing.
Let us determine spatio-temporal distributions of concentrations of dopants to solve our aim. We
assume, that main part of transport of dopant during annealing is diffusion. Interaction between
atoms of dopant and defects is small. In this situation we determine spatio-temporal distribution
of concentration of dopant as solution the second Fick's law in the following form [1,3, 18]
2

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

C (x, y, z, t ) C (x, y, z, t ) C (x, y, z, t ) C (x, y, z, t )

=
DC
+
DC
+
DC
. (1)
t
x
x
y
z
y
z

Boundary and initial conditions for the equations are

C (x, y, z, t )
C ( x, y , z , t )
C ( x, y , z , t )
C ( x, y , z , t )
=0,
=0,
= 0,
=0,
x
x
y
y
x=0
x = Lx
y =0
x=Ly
C ( x, y , z , t )
C ( x, y , z , t )
=0,
= 0 , C (x,y,z,0)=f (x,y,z).
z
z
z =0
x = Lz

(2)

Boundary conditions correspond to absents of flow of dopant through external boundaries of the
considered heterostructure. Initial distribution depends on type of doping: diffusion doping or ion
doping. In the Eqs.(1) and (2) function C(x,y,z,t) describes the spatio-temporal distribution of
concentration of dopant; T is the temperature of annealing; D is the dopant diffusion coefficient.
Value of dopant diffusion coefficient could be changed by heating and cooling of heterostructure
(with account Arrhenius law), radiation processing of materials of heterostructure and high doping of materials. Approximation of dopant diffusion coefficient on parameters could be written as
[19-21]

C ( x, y , z , t )
V ( x, y , z , t )
V 2 ( x, y , z , t )
DC = DL ( x, y, z, T ) 1 +
+

1 + 1
.
2

P (x, y , z, T )
V*
(V * )2

(3)

Here function DL (x,y,z,T) takes into account the spatial (due to presents several layers in heterostructure) and temperature (due to Arrhenius law) dependences of dopant diffusion coefficient.
Function P (x,y,z,T) describes approximation of the limit of solubility of dopant on coordinates in
heterostructure and temperature. The parameter shows averaged quantity of charged defects,
which interacting which interacting with atoms of dopant [19]. The function V (x,y,z,t) describes
the spatio-temporal distribution of concentration of radiation vacancies; V* is the equilibrium distribution of concentration of vacancies. The second term of the last part of Eq.(3) taking into account generation of radiation vacancies. The third term of the last part of Eq.(3) taking into account generation of radiation divacancies. Dependence of dopant diffusion coefficient on concentration of dopant has been described in details in [19]. It should be noted, that using diffusion type
of doping did not generation radiation defects. In this situation 1= 2= 0. We determine spatiotemporal distributions of concentrations of radiation defects by solving the following system of
equations [20,21]

I (x, y, z, t )
I ( x, y, z, t )
I (x, y, z, t )
=
DI (x, y, z, T )
+
DI ( x, y, z, T )
k I , I (x, y, z, T )
t
x
x
y
y

I 2 ( x, y , z , t ) +

I (x, y , z , t )

D I ( x, y , z , T )
k I ,V ( x, y , z, T ) I (x, y , z, t ) V ( x, y , z, t )
z
z

(4)

V (x, y, z, t )
V (x, y, z, t )
V (x, y, z, t )
=
DV (x, y, z, T )
+
DV (x, y, z, T )
kV ,V (x, y, z, T )
t
x
x
y
y

V 2 ( x, y , z , t ) +

V ( x, y , z , t )

DV (x, y , z , T )
k I ,V ( x, y, z, T ) I ( x, y , z , t ) V ( x, y , z , t ) .
z
z

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

Terms in the right sides of Eqs.(4) with derivatives on coordinate gives a possibility to take into
account diffusion of point radiation defects. Terms with V2(x,y,z,t) and I2(x,y,z,t) gives a possibility to take into account divacancies and diinterstitials. Term with I (x,y,z,t) V (x,y,z,t) gives a possibility to take into account recombination of point radiation defects. Boundary and initial conditions for Eqs.(4) are

(x, y, z, t )
(x, y , z , t )
( x, y , z , t )
( x, y , z , t )
=0,
=0,
=0,
= 0,

y
y

x
x
y =0
y= Ly
x=0
x = Lx
( x, y , z , t )
( x, y , z , t )
=0,
= 0 , (x,y,z,0)=f (x,y,z).
z
z
z =0
z=L

(5)

Here =I,V. The function I (x,y,z,t) describes the spatio-temporal distribution of concentration of
radiation interstitials. The functions D(x,y,z,T) describe the diffusion coefficients of point radiation defects. The function kI,V(x,y,z,T) describes the parameter of recombination of point radiation
defects. The functions k,(x,y,z,T) describe the parameters of generation of simplest complexes of
point radiation defects.
Spatio-temporal distributions of concentrations of divacancies (x,y,z,t) have been calculated by
solving the following system of equations [20,21]

I (x, y, z, t )
I (x, y, z, t )
I (x, y, z, t )
=
DI (x, y, z, T )
+
DI (x, y, z, T )
+
t
x
x
y
y

I (x, y, z, t )

2
DI (x, y, z, T )
+ k I , I (x, y, z, T ) I (x, y, z, t ) k I (x, y, z, T ) I (x, y, z, t ) (6)
z
z

V (x, y, z, t )
V (x, y, z, t )
V (x, y, z, t )
=
DV (x, y, z, T )
+
DV (x, y, z, T )
+
t
x
x
y
y

V ( x, y, z , t )

2
DV ( x, y, z, T )
+ kV ,V (x, y, z, T ) V (x, y, z, t ) kV (x, y, z, T ) V (x, y, z, t ) .
z
z

Terms in the right sides of Eqs.(6) with derivatives on coordinate gives a possibility to take into
account diffusion of complexes of point radiation defects. Terms with V2(x,y,z,t) and I2(x,y,z,t)
gives a possibility to take into account divacancies and diinterstitials. Term with I (x,y,z,t) and V
(x,y,z,t) gives a possibility to take into account decay of complexes of point radiation defects.
Boundary and initial conditions for Eqs.(4) are
( x, y , z , t )
x

=0,
x =0

( x, y , z , t )
z

=0,
z =0

( x, y , z , t )
x

x = Lx

( x, y, z, t )
z

=0,

( x, y , z , t )
y

= 0,
y =0

(x, y, z, t )
y

= 0,
y=Ly

= 0 , I (x,y,z,0)=fI (x,y,z), V (x,y,z,0)=fV (x,y,z). (7)

z =Lz

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

Here D(x,y,z,T) are the diffusion coefficients of the above complexes of radiation defects;
kI(x,y,z,T) and kV (x,y,z,T) are the parameters of decay of these complexes. To determine spatiotemporal distribution of concentration of dopant we transform the Eq.(1) to the following integrodifferential form
xyz x y z
yz t y z
V ( x, v, w, )
V 2 (x, v, w, )

1 + 1
C (u , v, w, t ) d w d v d u =
2
Lx L y L z Lx L y Lz
L y Lz 0 L y Lz
V*
(V * )2

C (x, v, w, ) C (x, v, w, )
xz t x z
DL (x, v, w, T ) 1 +
d +
DL (u, y, w, T )

x
P (x, v, w, T )
Lx Lz 0 Lx Lz

V (u , y, w, )
V 2 (u , y, w, )
C (u , y , w, ) C (u , y, w, )

1 + 1
+ 2
1
+
d +

2
*
V
(V * ) P (x, y, z,T ) y

xy t x y
V (u , v, z , )
V 2 (u , v, z , )
C (u , v, z , )

+2
1
+

DL (u , v, z , T ) 1 + 1

2
*
Lx L y 0 Lx L y
V
(V * ) P (x, y, z,T )

xyz x y z
C (u , v, z , )
d +
f (u , v, w) d w d v d u .
L x L y L z Lx L y L z
z

(1a)

We determine solution of the above equation by using Bubnov-Galerkin approach [22]. Framework the approach we determine solution of the Eq.(1a) as the following series
N

C0 (x, y, z,t) = anC cn (x) cn ( y) cn (z) enC(t) ,

n=0

where enC (t ) = exp 2 n 2 D0C t (Lx2 + Ly2 + Lz2 ) , cn()=cos( n/L). The above series includes
into itself finite number of terms N. The considered series is similar with solution of linear Eq.(1)
(i.e. with =0) and averaged dopant diffusion coefficient D0. Substitution of the series into
Eq.(1a) leads to the following result
xyz

aC
yz t y z N

s (x ) sn ( y ) sn (z ) enC (t ) =
1 + anC cn ( x ) cn (v ) cn (w) enC ( )
3 n
n =1 n

L y Lz 0 Ly Lz n =1
N

V ( x, v, w, )
V 2 ( x, v, w, )
1
+
+

DL ( x, v, w, T ) a nC sn ( x ) cn (v )

1
2

*
* 2
n =1
P ( x, v, w,T )
V
(V )

n cn (w) enC ( ) d

xz t x z N

1 + amC cm (u ) cm ( y ) cm (w) emC ( )

P (u, y, w, T )
Lx Lz 0 Lx Lz m=1

V (u , y , w, )
V 2 (u , y , w, ) N
DL (u , y , w, T ) 1 + 1
+2
n c (u ) s ( y ) c (w) e ( ) d
*
V
(V * )2 n=1 n n n nC

a nC

xy t x y

anC cn (u ) cn (v ) cn (z ) enC ( )
DL (u , v, z, T ) 1 +

L x L y 0 Lx L y
P (u , v, z , T ) n =1

V (u , v , z , )
V
1 + 1
+2
*
V

(u , v , z , )

(V )

* 2

N
xyz

n a nC c n (u ) c n (v ) s n ( z ) e nC ( ) d +
n
=
1
L
x L y Lz

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

x y z

f (u , v, w) d w d v d u ,
Lx L y Lz

where sn() = sin ( n /L). We determine coefficients an by using orthogonality condition of terms
of the considered series framework scale of heterostructure. The condition gives us possibility to
obtain relations for calculation of parameters an for any quantity of terms N. In the common case
the relations could be written as

L2x L2y L2z

N
L y L z t L x L y Lz

a nC
enC (t ) =
DL (x, y, z , T ) 1 + a nC cn ( x ) cn ( y ) cn ( z ) enC ( )
6
2

n =1 n
2 0 0 0 0
n=1
N

V (x, y , z, )
V 2 ( x, y , z, ) N anC
+ 2
s (2 x ) cn ( y ) cn ( z ) enC ( )

1 + 1
*
P ( x, y , z, T )
V
(V * )2 n=1 n n

t Lx L y Lz
Ly

[c n ( y ) 1] z s n (z ) + L z [c n (z ) 1] d z d y d x d D L (x , y , z , T )
y sn (y ) +
n
n
0 0 0 0

V ( x , y , z , )
D L (x, y , z , T ) 1 + a nC c n (x ) cn ( y ) cn (z ) enC ( )
+
1 + 1

P (x, y , z, T )
V*
n =1

+2

Lx
V 2 ( x , y , z , )
V (x, y , z , )
V 2 ( x, y , z , ) N
[cn (x ) 1] anC
1
+
+

x sn (x ) +
1
2
*
* 2
* 2
V
n
(V )
(V ) n=1
n

LL

Lx Lz
L
cn (x ) sn (2 y ) cn ( z ) enC ( ) z sn (z ) + z [cn ( z ) 1] d z d y d x d x 2y
2
2
n
2

t L x L y Lz
N

V 2 (x, y , z, )
1 + a nC c n ( x ) cn ( y ) cn ( z ) enC ( )
+
+
1

2
n=1
P ( x, y, z , T )
0 0 0 0
(V * )2

+ 1

N a

L
V ( x, y, z , )
nC
(
)
D
x
,
y
,
z
,
T
cn ( x ) cn ( y ) sn ( z ) x sn ( x ) + x [cn (x ) 1]

L
*

n
=
1
V
n
n

N Lx
Ly

y sn ( y ) +
[cn ( y ) 1] enC ( )d z d y d x d + x sn (x ) + Lx [cn (x ) 1]
n =1 0
n
n

Ly
Lz
Ly

[cn ( y ) 1] z sn (z ) + Lz [cn (z ) 1] f (x, y, z ) d z d y d x .

y sn ( y ) +
n
n
0

As an example for = 0 we obtain

Lx L y
Ly
L
Lz

a nC = y s n ( y ) +
[cn ( y ) 1] z sn (z ) + y [cn (z ) 1] f (x, y, z ) d z d y { x s n (x ) +
n
n
0 0
0

[c n ( x ) 1]

Ly
Lz
Ly

Lx n t Lx
[cn ( y ) 1] DL (x, y, z,T )
d x s n (2 x ) cn ( y ) y sn ( y ) +
n 2 0 0
n
0

Ly

[cn (z ) 1]1 + 1 V (x, y*, z, ) + 2 V (x, *y,2z, ) 1 +

z sn (z ) +

n
V
(V ) P (x, y, z, T )

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

Ly
Lx
Lz
t
Ly

[c n (x ) 1] s n (2 y ) c n (z )
c n ( z ) d z d y d x e nC ( ) d + e nC ( ) c n ( x ) x s n ( x ) +
n
0
0
0

Ly

V ( x , y , z , )
V 2 (x , y , z , )
[c n (z ) 1] 1 +

z s n (z ) +
+

1 + 1
2

n
P (x , y , z , T )
V*
(V * )2

Lx
t

Ly
L
DL ( x, y , z, T ) d z d y d x d + enC ( ) cn ( x ) x sn ( x ) + x [cn (x ) 1] cn ( y ) { sn ( y )
n
0
0

y+

Ly

[c ( y ) 1] s (2 z ) D (x, y, z,T ) 1 +
Lz

V 2 ( x, y, z , )
+
1 + 2

P ( x, y , z, T )
(V * )2

L2z L2z L2z

V ( x, y, z , )

+ 1
d
z
d
y
d
x
d
5 6 enC (t ) .
*

For = 1 one can obtain the following relation to determine required parameters

a nC =

where n =

Ly
Lx
Lz
n
n2 + 4 n c n ( x ) c n ( y ) cn (z ) f ( x, y, z ) d z d y d x ,
2 n
0
0
0

L y Lz
Lx
L y Lz t
V (x, y , z , )
V 2 ( x, y , z , ) D L ( x, y , z , T )
+2

e nC ( ) s n (2 x ) 1 + 1
2
*
2 n 0
V
0
0 0
(V * )2 P(x, y, z, T )

t
Ly

[c n ( y ) 1] z s n (z ) + Lz [c n (z ) 1] d z d y d x d + Lx2Lz enC ( )
c n ( y ) c n (z ) y s n ( y ) +
n
n
2 n 0

Lx
L
L y Lz

L
V ( x, y , z , )
V 2 ( x, y , z , )
x s n (x ) + x [c n (x ) 1] z s n (z ) z [c n (z ) 1]1 + 1
+

2
V*
n
n
0
(V * )2
0 0

Ly
Lx
Lz
Lx L y t
D ( x, y , z , T )
D L ( x, y , z , T )
(
)
(
)
c n ( x ) s n (2 y ) c n (z ) L
d z d y d xd +
e

c
x

nC n c n ( y )
2
P ( x, y , z , T )
2 n 0
0
0
0 P ( x, y , z , T )

Lx
V ( x, y , z , )
V 2 ( x, y , z , )
1 + 1
+2
[c n (x ) 1] y s n ( y ) + y [c n ( y ) 1] d y
x s n (x ) +
*
2
*
V
n
n
(V )

L y Lz
Lx

L y Lz t
V (x, y, z, )
V 2 (x, y, z, )
+2
e ( ) s n (2 x ) cn (z ) 1 + 1
s n (2 z ) d z d x d , n =

2 nC
*
2 n 0
V
0
0 0
(V * )2

Ly

L
[cn ( y ) 1] d y d x d + Lx Lz2
DL (x, y, z, T ) z s n (z ) + z [c n ( z ) 1] d z cn ( y ) y s n ( y ) +
n
n
2 n

Lx
Lz
t

L y
L
V ( x, y , z , )
V 2 ( x, y, z, )
enC ( ) c n ( x ) x s n (x ) + x [c n ( x ) 1] s n (2 y ) c n (z ) 1 + 1
+

2
n
V*
0
0
0
(V * )2

Lx
Lx L y t

L
L
DL (x, y, z, T ) z s n (z ) + z [cn (z ) 1] d z d y d x d +
e ( ) x s n ( x ) + x [cn (x ) 1]
2 nC

n
2
n

n
0
0

2
Ly

Ly

Lz
y sn ( y ) +
[cn ( y ) 1] s n (2 z ) DL (x, y, z, T ) 1 + 1 V (x, y*, z, ) + 2 V (x, *y,2z, ) d z
n
V
0
(V )

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

cn ( y ) d y cn (x ) d x d L2x L2y L2z enC (t ) 5 n 6 .

Analogous way could be used to calculate values of parameters an for larger values of parameter

. However the relations will not be present in the paper because the relations are bulky.Equations
of the system (4) have been also solved by using Bubnov-Galerkin approach. Previously we transform the differential equations to the following integro- differential form
t y z
xyz x y z
I ( x, v, w, )
d wd v d
I (u , v, w, t ) d w d v d u = DI (x, v, w, T )
Lx L y Lz L x L y L z
x
0 L y Lz

x y z
yz
xz t x z
I (u , y , w, )
+
d w d u d k I ,V (u , v, w, T )
DI (u , y , w, T )
L y Lz Lx Lz 0 L x L z
x
Lx L y Lz

I (u , v, w, t )V (u , v, w, t ) d w d v d u
DI (u , v, z , T ) d v d u d

xyz
x y t x y I (u , v, z , )
+

z
Lx L y Lz L x L y 0 L x L y

xyz x y z
2
k I , I (u , v, w, T ) I (u , v, w, t ) d w d v d u +
Lx L y Lz L x L y L z

xyz x y z
f I (u , v, w) d w d v d u
Lx L y Lz L x L y L z

(4a)

t y z
xyz x y z
V ( x, v, w, )
d wd v d
V (u , v, w, t ) d w d v d u = DV (x, v, w, T )
Lx L y L z L x L y L z
x
0 L y Lz

t x y
yz
xz t x z
V (u , y , w, )
+
d w d u d + DV (u , v, z, T )
DV (u , y, w, T )
L y Lz Lx Lz 0 L x L z
x
0 Lx L y

x y z
V (u , v, z , )
xy
d vd ud
k I ,V (u , v, w, T ) I (u , v, w, t ) V (u , v, w, t ) d w d v d u
z
L x L y L x L y Lz

x y z

xyz
xyz x y z
2
+
f V (u, v, w) d w d v d u kV ,V (u, v, w, T ) V (u, v, w, t ) d w d v d u .
Lx L y Lz Lx L y Lz Lx L y Lz
Lx L y Lz

We determine solutions of the Eqs.(4a) as the following series

N

0 (x, y, z, t ) = an cn ( x ) cn ( y ) cn ( z ) en (t ) .
n =1

Coefficients an are not yet known. Substitution of the series into Eqs.(4a) leads to the following
results
xyz

t y
z
a nI
y z N
s n ( x ) s n ( y ) s n (z ) enI (t ) =
a nI cn ( y ) cn ( z ) DI ( x, v, w, T ) d w d v
3
n =1 n
Lx L y Lz n=1 0 L y
Lz
N

enI ( ) d s n ( x )

t
x
z
x z N
a nI s n ( y ) enI ( ) c n (x ) cn ( z ) DI (u , y , w, T ) d w d u d
Lx L y Lz n =1
0
Lx
Lz

y
t
x
x y z
x y N
a nI s n ( z ) enI ( ) cn ( x ) cn ( y ) DI (u , v, z , T ) d v d u d k I , I (u , v, v, T )
Lx L y Lz n=1
Lx
Ly
0
Lx L y Lz

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

2
N
xyz
xyz x y z N
a nI c n (u ) c n (v ) c n (w) e nI (t ) d w d v d u

a nI c n (u ) c n (v ) c n (w)
n =1

L x L y L z L x L y L z Lx L y Lz n =1

enI (t ) anV cn (u ) cn (v) cn (w) enV (t ) k I ,V (u, v, v, T ) d w d v d u +

n =1

xyz

t y
z
a nV
y z N
s n (x ) s n ( y ) s n (z ) enV (t ) =
a nV cn ( y ) cn ( z ) DV ( x, v, w, T ) d w d v
3
n =1 n
Lx L y Lz n=1
0 Ly
Lz
N

enV ( ) d s n ( x )

xyz x y z
f I (u, v, w) d w d v d u
Lx L y L z Lx L y Lz

t
x
z
x z N
a nV s n ( y ) enV ( ) cn ( x ) c n ( z ) DV (u , y, w, T ) d w d u d
Lx L y Lz n=1
0
Lx
Lz

y
t
x
x y z
x y N
a nV sn ( z ) enV ( ) cn (x ) cn ( y ) DV (u , v, z , T ) d v d u d kV ,V (u , v, v, T )
Lx L y Lz n=1
0
Lx
Ly
Lx L y L z

2
N
xyz
xyz x y z N
a nV cn (u ) cn (v ) cn (w) enI (t ) d w d v d u

a nI c n (u ) c n (v ) c n (w )
n=1

Lx L y Lz Lx L y Lz Lx L y Lz n=1
N

enI (t ) anV cn (u ) cn (v) cn (w) enV (t ) k I ,V (u, v, v, T ) d w d v d u +

n =1

xyz x y z
f V (u, v, w) d w d v d u .
Lx Ly Lz Lx Ly Lz

We determine coefficients an by using orthogonality condition on the scale of heterostructure.

The condition gives us possibility to obtain relations to calculate an for any quantity N of terms
of considered series. In the common case equations for the required coefficients could be written
as

L2x L2y L2z

Ly
Ly

a nI
1 N anI t Lx
(
)
(
)
e
t
=

[
1

c
2
x
]
[cn (2 y ) 1]

L y + y s n (2 y ) +
nI
n
6
2
n =1 n
2 Lx n =1 n 0 0
2 n
0

Lz

L
1 N anI t Lx
DI (x, y, z , T ) z s n ( z ) + z [cn (z ) 1] d z d y d x enI ( ) d

{ x s n (2 x ) +
2 n
2 L y n=1 n 2 0 0
0

+ Lx +

L y Lz
Lx
[cn (2 x) 1] DI (x, y, z,T )Lz + z sn (2 z ) + Lz [cn (2 z ) 1] d z [1 cn (2 y )]
n
2 n
0 0

Lz

L
d y d x enI ( ) d DI ( x, y, z , T )Lz + z s n (2 z ) + z [c n (2 z ) 1] d z d y d x enI ( ) d
2
n

Ly

Ly
L
1 N a nI t Lx
[cn (2 y ) 1]
2 Lx + x sn (2 x ) + x [cn (2 x ) 1] L y + y sn (2 y ) +
n
=
1
2 Lz n 0 0
2 n
2 n
0

Lz
Lx
N
L
[1 cn (2 z )] DI ( x, y, z , T ) d z d y d x enI ( ) d a nI2 enI (2 t ) Lx + x [cn (2 x ) 1] +
n =1
2 n
0
0
Ly
Ly

Lz
[c n (2 y ) 1] k I , I (x, y, z, T ) L z + L z [cn (2 z ) 1] +
+ x s n (2 x )} L y + y s n (2 y ) +
2 n
2 n
0

Lx
N
Ly
L
+ z sn (2 z )}d z d y d x anI anV enI (t ) enV ( t ) Lx + x s n (2 x ) + x [cn (2 x ) 1] {L y +
n =1
2 n
0
0

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

+ y sn (2 y ) +

Ly
2 n

[c (2 y ) 1] k (x, y, z, T )L
Lz

I ,V

+ z s n (2 z ) +

Lz
[cn (2 z ) 1] d z
2 n

Lz
N Lx
Ly
Ly
L
[cn ( y ) 1] f I (x, y, z, T )
d y d x + x s n (x ) + x [cn ( x ) 1] y s n ( y ) +
n =1 0
n
n

0
0

L
Lz + z sn (2 z ) + z [cn (2 z ) 1] d z d y d x
2 n

L2x L2y L2z

Ly
Ly

a nV
1 N a nV t Lx
(
)
[
(
)
]
[cn (2 y ) 1]
e
t
=

c
2
x

L y + y s n (2 y ) +
nV
n
6
2
n =1 n
2 Lx n=1 n 0 0
2 n
0

Lz

L
1 N anV t Lx
DV ( x, y, z, T ) z sn (z ) + z [cn (z ) 1] d z d y d x enV ( ) d

{ x sn (2 x ) +
2 n
2 Ly n =1 n 2 0 0
0

+ Lx +

L y Lz
Lx
[cn (2 x) 1] DV (x, y, z,T )Lz + z sn (2 z ) + Lz [cn (2 z ) 1] d z [1 cn (2 y )]
n
2 n
0 0

Lz

L
d y d x enV ( ) d DV (x, y, z ,T )Lz + z sn (2 z ) + z [cn (2 z ) 1] d z d y d x enV ( ) d
2 n
0

Ly

Ly
L
1 N a nV t Lx
[cn (2 y ) 1]
2 Lx + x sn (2 x ) + x [cn (2 x ) 1] L y + y sn (2 y ) +
2 Lz n=1 n 0 0
2 n
2

n
0

Lz
Lx
N
L
2
[1 cn (2 z )] DV ( x, y , z , T ) d z d y d x enV ( ) d a nV
enV (2 t ) Lx + x [c n (2 x ) 1] +
n
=
1
2 n
0
0

Ly
Ly

Lz
+ x s n (2 x )} L y + y sn (2 y ) +
[cn (2 y ) 1] kV ,V (x, y, z,T )Lz + Lz [cn (2 z ) 1] +
2 n
2 n
0

0
Lx
N
Ly
L
+ z s n (2 z )}d z d y d x anI anV enI (t )enV ( t ) Lx + x s n (2 x ) + x [cn (2 x ) 1] { L y +
n =1
2 n
0
0

+ y sn (2 y ) +

Ly
2 n

[c (2 y ) 1] k (x, y, z, T )L
Lz

I ,V

+ z s n (2 z ) +

Lz
[cn (2 z ) 1] d z
2 n

Lz
N Lx
Ly
Ly
L
[cn ( y ) 1] fV (x, y, z ,T )
d y d x + x s n ( x ) + x [c n ( x ) 1] y s n ( y ) +
n =1 0
n
n

0
0

L
Lz + z sn (2 z ) + z [cn (2 z ) 1] d z d y d x .
2

In the final form relations for required parameters could be written as

a nI =

b3 + A

4 b4

(b3 + A)2 4 b y + b3 y nV 2nI ,

4

a nV =

nI a nI2 + nI anI + nI
,
nI a nI

Lx L y Lz

L
where n = en (2 t ) k , ( x, y, z, T ) Lx + x sn (2 x ) + x [cn (2 x ) 1]{y s n (2 y ) + L y +
2

n
0 0 0

10

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

[c (2 y ) 1]L

Ly

2 n

+ z s n (2 z ) +

t
Lz
[cn (2 z ) 1] d z d y d x , n = 1 2 en ( )
2 n
2 Lx n 0

Lz
Ly

[cn ( y ) 1] z sn (z ) + Lz [cn (z ) 1] D (x, y, z,T ) d z d y [1

y sn ( y ) +
2 n
2 n
0 0

0
Lx
Lz
t
Ly
Lx
1
(
)
(
)
(
)
cn (2 x )] d x d +
e
L
+
x
s
2
x
+
[
c
2
x

1
]

[1 cn (2 y )] {Lz +
n
x
n
n
2
2 L y n 0
n
0
0
0
Lx L y

+ z s n (2 z ) +

+ Lx +

Lx
t
Lz
[cn (2 z ) 1]D (x, y, z,T ) d z d y d x d + 1 2 en ( ) {x sn (2 x ) +
2 n
2 Lz n 0
0

Ly
L

Lz
Lx
[cn (2 x ) 1] L y + y sn ( y ) + y [cn ( y ) 1] [1 cn (2 z )]D (x, y, z,T ) d z
2 n
n
0
0

Lx
Ly
Ly
L
en (t ) , nIV = x sn (x ) + x [cn (x ) 1] L y +
[cn (2 y ) 1] +
2 n
n
n
0
0
Lz

L
+ y sn (2 y )} k I ,V ( x, y, z, T ) Lz + z s n (2 z ) + z [cn (2 z ) 1] d z d y d x enI (t ) enV ( t ) ,
2 n
0

d yd xd

Lx

L2x L2y L2z

n = x sn (x ) +

Ly
L

Lz
Lx
[cn (x) 1] y sn ( y ) + y [cn ( y ) 1] z sn (z ) + Lz [cn (z ) 1]
n
n
n
0

f ( x, y , z , T ) d z d y d x , b4 = nV nI2 nI nI2 , b3 = 2 nV nI nI nI nI2 nV nI nI ,

0

A = 8 y + b32 4b2 , b2 = nV nI2 + 2nI nV nI nV nI nI + (nV nI ) nI2 , b1 = 2nI

nV nI nV nI nI , y = 3

q 2 + p3 q 3

q2 + p3 + q

3b b b 2
b3
, p= 2 42 3 ,
9 b4
3 b4

q = (2b33 9b2 b3 + 27b1b42 ) 54 b43 .

We determine solutions of the Eqs.(4a) as the following series

N

0 ( x, y , z, t ) = a n cn ( x ) cn ( y ) cn ( z ) en (t ) .
n =1

Coefficients an are not yet known. Let us previously transform the Eqs.(6) to the following integro-differential form
t y z
I ( x, v, w, )
xyz x y z
d wd v d
I (u , v, w, t ) d w d v d u = DI ( x, v, w, T )
L x L y L z Lx L y Lz
x
0 L y Lz

I (u , y, w, )
yz
xz t x z
xy t x y
+
d wd u d +
DI (u , y , w, T )
DI (u , v, z, T )
y
L y L z L x L z 0 L x Lz
L x L y 0 Lx L y

I (u , v, z , )
xyz x y z
2
d vd u d +
k I , I (u , v, w, T ) I (u , v, w, ) d w d v d u (6a)
L x L y L z Lx L y Lz
z

xyz x y z
xyz x y z
k I (u , v, w, T ) I (u , v, w, ) d w d v d u +
f I (u , v, w) d w d v d u
L x L y L z Lx L y Lz
L x L y L z Lx L y Lz

11

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015
t y z
V ( x, v, w, )
xyz x y z
d wd v d
V (u , v, w, t ) d w d v d u = DV ( x, v, w, T )
x
L x L y L z Lx L y Lz
0 L y Lz

V (u , y, w, )
yz
xz t x z
xy t x y
+
d wd u d +
DV (u , y , w, T )
DV (u , v, z , T )
L y L z L x L z 0 L x Lz
L x L y 0 Lx L y
y

V (u , v, z , )
xyz x y z
2
d vd u d +
kV ,V (u , v, w, T )V (u , v, w, ) d w d v d u
z
L x L y L z L x L y Lz

xyz x y z
xyz x y z
kV (u , v, w, T ) V (u , v, w, ) d w d v d u +
f V (u , v, w ) d w d v d u .
L x L y L z Lx L y Lz
L x L y L z Lx L y Lz

Substitution of the previously considered series in the Eqs.(6a) leads to the following form
t y z
a nI
y z N
s
(
x
)
s
(
y
)
s
(
z
)
e
(
t
)
=

n
a
s
(
x
)
e
(
t
)

cn (v )c n (w)
n
n
n
nI
n

I
n
nI
3 3
n =1 n
Lx L y Lz n =1
0 L y Lz
N

x y z

DI (x, v, w, T ) d w d v d

n sn ( y )enI (t )
+

t x z
x z N
a nI c n (u )c n (w ) DI (u , v, w, T ) d w d u d
Lx L y Lz n =1
0 Lx Lz

t x y
x y N
n a nI sn ( z )enI (t ) cn (u )cn (v ) DI (u , v, z, T ) d v d u d +
Lx L y Lz n=1
0 Lx L y

x y z
xyz x y z
2
k I , I (u , v, w, T ) I (u , v, w, ) d w d v d u + f I (u , v, w) d w d v d u
L x L y L z Lx L y Lz
Lx L y Lz

xyz
xyz x y z

k I (u , v, w, T ) I (u , v, w, ) d w d v d u
L x L y L z L x L y L z Lx L y Lz

t y z
a nV
y z N
s (x ) s n ( y ) s n ( z ) enV (t ) =
n anV s n ( x )enV (t ) c n (v )cn (w)
3 3 n
n =1 n
Lx L y Lz n =1
0 L y Lz
N

x y z

DV ( x, v, w, T ) d w d v d

a nV s n ( y ) enV (t )
a nV +

x z N t x z
n cn (u )c n (w) DV (u , v, w, T ) d w d u d
Lx L y Lz n =1 0 Lx Lz

t x y
x y N
n sn (z )enV (t ) cn (u )cn (v ) DV (u , v, z , T ) d v d u d
Lx L y Lz n=1
0 Lx L y

x y z
xyz x y z
2
kV ,V (u , v, w, T )V (u , v, w, ) d w d v d u + f V (u , v, w ) d w d v d u
L x L y L z Lx L y Lz
Lx L y Lz

xyz
xyz x y z

kV (u , v, w, T ) V (u , v, w, ) d w d v d u .
L x L y L z L x L y L z Lx L y Lz

We determine coefficients an by using orthogonality condition on the scale of heterostructure.

The condition gives us possibility to obtain relations to calculate an for any quantity N of terms
of considered series. In the common case equations for the required coefficients could be written
as

12

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

L2x L2y L2z

5

Ly
Ly

a n I
1 N t Lx
enI (t ) =
[cn (2 y ) 1]
[1 c n (2 x )] L y + y s n (2 y ) +
6
n =1 n
n
=
1
2 Lx 0 0
2 n
0

anI Lz
Lz
1 N t Lx
(
)
(
)
[
(
)
]
(
)

D
x
,
y
,
z
,
T
z
s
z
c
z
1
d
z
d
y
d
x
e
d
+

{x s n (2 x ) +

I
n
n
n

I
n2 0
2 n
2 n=1 0 0

+ Lx +

Ly
Lz
Lx
[cn (2 x) 1] [1 cn (2 y )] DI (x, y, z, T ) z sn (z ) + Lz [cn (z ) 1] d z d y d x
2 n
2 n
0
0

Ly
L y
enI ( )
Lx
1 N anI t Lx
(
)
[
(
)
]
[cn (2 y ) 1] +

d
x
s
x
c
x
1

y sn (2 y ) +
n
n
2
2
n Ly
2 Lx n=1 n 0 0
2 n
2 n
0

anI

Lz

+ Ly } [1 cn (2 y )] DI (x, y, z, T ) d z d y d x enI ( ) d +
0

Lx
anI t
L
e ( ) x [cn (x ) 1] +
3 nI
n=1 n 0
0 2 n

Ly
Lz
Ly

[cn ( y ) 1] I 2 (x, y, z, t ) k I ,I (x, y, z,T ) Lz [cn (z ) 1] +

+ x s n (x )} y s n ( y ) +
2 n
0
2 n
0

+ z sn ( z )} d z d y d x

Lx
Ly L y
a nI t
L
e ( ) x sn (x ) + x [cn (x ) 1]
[cn ( y ) 1] +
3 n I
n=1 n 0
2 n
0
0 2 n

Lz

L
1 N a
+ y s n ( y )} z s n ( z ) + z [cn ( z ) 1] k I ( x, y, z , T ) I ( x, y , z , t ) d z d y d x + 3 n3 I
2 n
n=1 n
0

Lx
t
Ly
Lz
Ly
L
enI ( ) x sn ( x ) + x [cn (x ) 1] y s n ( y ) +
[cn ( y ) 1] Lz [cn (z ) 1] +
2 n
2 n
0
0
0
0 2 n

+ z s n ( z )} f I ( x, y, z ) d z d y d x

2
x

2
y

2
z

LL L

Ly
Ly

a n V
1 N t Lx
[cn (2 y ) 1]
enV (t ) =
[1 c n (2 x )] L y + y s n (2 y ) +
6
=
1
n =1 n
n
2 Lx 0 0
2 n
0

anV Lz
Lz
1 N t Lx
(
)
(
)
(
)
(
)
D
x
,
y
,
z
,
T
z
s
z
+
[
c
z

1
]
d
z
d
y
d
x
e
d

{x sn (2 x ) +

V
n
n
n

V
n2 0
2 n
2 n=1 0 0

+ Lx +

anV

Ly
Lz
Lx
[cn (2x) 1] [1 cn (2 y)] DV (x, y, z,T )z sn (z ) + Lz [cn (z ) 1] d z d y d x
2 n
2 n
0
0

Ly
L y
enV ( )
Lx
1 N anV t Lx
(
)
(
)
d

x
s
x
+
[
c
x

1
]
[cn (2 y ) 1] +

y sn (2 y ) +
n
n
2
2
n Ly
2 Lx n=1 n 0 0
2 n
2 n
0
Lz

+ Ly } [1 cn (2 y )] DV (x, y, z, T ) d z d y d x enV ( ) d +
0

Lx
anV t
L
e ( ) x [cn ( x) 1] +
3 nV
n=1 n 0
0 2 n

Ly
Ly

Lz
+ x s n ( x )} y sn ( y ) +
[cn ( y ) 1] V 2 (x, y, z, t ) kV ,V (x, y, z, T ) Lz [cn (z ) 1] +
2 n
0
2 n
0

+ z s n (z )} d z d y d x

Lx
Ly L y
anV t
L
[cn ( y ) 1] +
e ( ) x s n (x ) + x [cn (x ) 1]
3 nV
n=1 n 0
2 n
0
0 2 n

13

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

Lz

L
1 N a
+ y s n ( y )} z s n ( z ) + z [c n ( z ) 1] k V ( x, y, z , T ) V ( x, y, z, t ) d z d y d x + 3 n3V
2 n
n =1 n
0

Lx
Lz
t
Ly
Ly
L
[cn ( y ) 1] Lz [cn (z ) 1] +
enV ( ) x s n ( x ) + x [cn ( x ) 1] y s n ( y ) +
2 n
2 n
0
0
0
0 2 n

+ z s n (z )} f V ( x, y , z ) d z d y d x .

It should be noted, that we consider analytical algorithm of calculation of concentrations of dopant and radiation defects. We use only two simplifications: (i) we consider approximate using of
Arrhenius law for analytical calculation of appropriate integrals; (ii) we consider so approximations of initial distributions, which give a possibility to calculate appropriate integrals analytically. Summation of considered series after calculation of integrals could be done by using any soft,
which gives a possibility of the summation.

3.Discussion
In this section we used calculated in the previous sections relations for analysis the spatio- temporal distributions of concentrations of infused and implanted dopants. During analysis of spatial
distributions of concentrations of dopants it has been shown, that inhomogeneity of heterostructure gives us possibility to increase sharpness of p-n-heterojunctions both single and framework
transistors. Figs. 2 show spatial distributions of concentrations of dopants in direction, which is
perpendicular to interface between epitaxial layer substrate. Increasing of number of curve corresponds to increasing of difference between values of dopant diffusion coefficient in layers of
heterostructure under condition, when value of dopant diffusion coefficient in epitaxial layer is
larger, than value of dopant diffusion coefficient in substrate. We calculate distributions of concentrations of dopants for larger value of dopant diffusion coefficient in doped area in comparison
with undoped one.

Fig.2a. Distributions of concentration of infused dopant in heterostructure from Figs. 1 and 2

14

International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

2.0
1

C(x,)

1.5

2
3

1.0
Epitaxial layer

0.5

Substrate

0.0
L
L/2
3L/4
x
Fig.2b. Distributions of concentration of implanted dopant. Curves 1 and 3 corresponds to annealing time
= 0.0048(Lx2+Ly2+Lz2)/D0. Curves 2 and 4 corresponds to annealing time = 0.0057(Lx2+Ly2+Lz2)/D0
0

L/4

One can find from the Figs.2 show, that in homogeneity of heterostructure leads to increasing
sharpness of p-n-junctions and homogeneity of distribution of concentration of dopant. However
in this situation one shall optimize annealing of dopant and/or radiation defects during manufacturing p-n-junctions and transistors. Reasons of this necessity is following. If annealing time of
infused dopant is small, dopant have no enough time to achieve interface between layers of heterostructure. In this situation one can not find any changing of distribution of concentration of dopant with presents of interface between layers of hterostructure. If annealing time is too large,
distribution of concentration of dopant became too homogenous. We determine optimal value of
annealing time framework recently introduced criterion [17,23-31]. To use the criterion one shall
approximate real distribution of concentration of dopant by step-wise function (x,y,z). After that
we determine required optimal value of annealing time by minimization the following meansquared error

U=

Lx L y Lz
1
[C ( x, y , z , ) ( x, y, z )] d z d y d x .
Lx L y Lz 0 0 0

(8)

In this case we obtain optimal value of annealing time, which corresponds to minimal difference
between real distribution of concentration of dopant and required step-wise approximation of the
concentration.

Dependences of optimal values of annealing time of dopant are presented on Figs. 3. Curve 1 is
the dependence of dimensionless optimal annealing time on the relation a/L and = = 0 for equal
to each other values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 is the
dependence of dimensionless optimal annealing time on value of parameter for a/L=1/2 and =
= 0. Curve 3 is the dependence of dimensionless optimal annealing time on value of parameter
for a/L =1/2 and = = 0. Curve 4 is the dependence of dimensionless optimal annealing time on
value of parameter for a/L=1/2 and = = 0. It is known, that radiation defects after ion implantation should be annealed. In the ideal case annealing time of radiation defects should be so, that
dopant during the annealing should be achieves interface between layers of heterostructure. If the
dopant has not enough time to achieve the interface during the annealing, it is practicably to use
additional annealing of dopant. Dependences of optimal values of the above additional annealing
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International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

of dopant are presented on the Fig. 3b. Necessity of annealing of radiation defects leads to smaller
values of optimal annealing time of implanted dopant in comparison with the optimal annealing
time of infused dopant. It is known, that diffusion type of doping did not leads to any radiation
damage of materials of heterostructure. However ion implantation gives us possibility gives us
possibility to decrease mismatch-induced stress in heterostructure [32].
0.5

D0 L

-2

0.4

0.3
3

0.2

1
0.1
0.0
0.0

0.1

0.2
0.3
0.4
0.5
a/L, , ,
Fig.3a. Dependences of dimensionless optimal annealing time for doping by diffusion
0.12

2
0.08
D0 L

-2

0.04

0.00
0.0

0.1

0.2
0.3
0.4
0.5
a/L, , ,
Fig.3b. Dependences of dimensionless optimal annealing time for doping by ion implantation

4.CONCLUSIONS
In this paper we introduce an approach to manufacture more compact logical elements based on
bipolar transistor. The approach based on fabrication a heterostructure with required configuration, doping by diffusion or ion implantation of required parts of heterostructure and optimal annealing of dopant and/or radiation defects. At the same time we consider an analytical approach
to model technological processes, which gives us possibility to do without crosslinking solutions
at the interfaces between the layers of the heterostructure.

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International Journal on Computational Science & Applications (IJCSA) Vol.5, No.4, August 2015

ACKNOWLEDGEMENTS
This work is supported by the agreement of August 27, 2013 02..49.21.0003 between The
Ministry of education and science of the Russian Federation and Lobachevsky State University of
Nizhni Novgorod and educational fellowship for scientific research of Government of Russian
and of Nizhny Novgorod State University of Architecture and Civil Engineering.

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Authors
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Radiophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radiophysics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Microstructures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgorod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor
course in Radiophysical Department of Nizhny Novgorod State University. He has 105 published papers in
area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
Center for gifted children. From 2009 she is a student of Nizhny Novgorod State University of Architecture and Civil Engineering (spatiality Assessment and management of real estate). At the same time she
is a student of courses Translator in the field of professional communication and Design (interior art) in
the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant MK-548.2010.2).
She has 52 published papers in area of her researches.

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