IRF450

Data Sheet

March 1999

13A, 500V, 0.400 Ohm, N-Channel

Power MOSFET

13A, 500V

Formerly developmental type TA17435.

Ordering Information
IRF450

PACKAGE
TO-204AA

1827.3

Features

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

PART NUMBER

File Number

rDS(ON) = 0.400
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol
BRAND
D

IRF450

NOTE: When ordering, include the entire part number.

G

Packaging
JEDEC TO-204AA

DRAIN
(FLANGE)

SOURCE (PIN 2)
GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF450
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRF450
500
500
13
8.1
52
20
125
1.2
860
-55 to 150

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.
TC = 25oC, Unless Otherwise Specified

Electrical Specifications

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

PARAMETER

SYMBOL
BVDSS

VGS = 0V, ID = 250A (Figure 10)

500

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

2.0

4.0

100

nA

Gate to Source Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Current (Note 2)

ID(ON)

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)
Turn-On Delay Time

rDS(ON)
gfs
td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

TEST CONDITIONS

VGS = 20V
VDS = Rated BVDSS, VGS = 0V

25

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

250

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)

13

0.3

0.400

VGS = 10V, ID = 7.2A (Figures 8, 9)

VDS 50V, ID = 7.2A (Figure 12)
VDD = 250V, ID 13A, RG = 6.2, RL = 19
(Figures 17, 18) MOSFET SwitchingTimes are
Essentially Independent of Operating
Temperature

tf

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

Gate to Source Charge

Qgs

VGS = 10V, ID = 13A, VDS = 0.8 x Rated BVDSS ,

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature

6.0

11

20

27

ns

40

66

ns

72

100

ns

35

60

ns

85

130

nC

12

nC

42

nC

1800

pF

Gate to Drain Miller Charge

Qgd

Input Capacitance

CISS

Output Capacitance

COSS

400

pF

Reverse Transfer Capacitance

CRSS

100

pF

5.0

nH

12.5

nH

0.83

oC/W

30

oC/W

Internal Drain Inductance

LD

Internal Source Inductance

LS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

Measured between the

Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
to Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S

Thermal Resistance Junction to Case

RJC

Thermal Resistance Junction to Ambient

RJA

Free Air Operation

IRF450
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

ISD

Pulse Source to Drain Current (Note 3)

ISDM

TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode

MIN

TYP

MAX

UNITS

13

52

Source to Drain Diode Voltage (Note 2)

VSD

TJ

trr

TJ

QRR

TJ

Reverse Recovery Time

Reverse Recovered Charge

= 25oC, ISD = 13A, VGS = 0V (Figure 13)

= 25oC, ISD = 13A, dISD/dt = 100A/s
= 25oC, ISD = 13A, dISD/dt = 100A/s

1.4

280

600

1200

ns

3.2

7.5

14

NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 9.2mH, RG = 25, peak IAS = 13A. See Figures 14, 15.

Typical Performance Curves

Unless Otherwise Specified

15

ID, DRAIN CURRENT (A)

1.0

0.8
0.6
0.4
0.2
0

12

0
0

50

100

150

25

50

TC , CASE TEMPERATURE (oC)

75

125

100

150

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

10
ZJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)

POWER DISSIPATION MULTIPLIER

1.2

1
0.5
0.1

0.001

0.2

PDM

0.1
0.05
0.02
0.01

t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC

SINGLE PULSE

0.0001
10-5

10-4

10-2
10-3
0.1
t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

10

IRF450
Typical Performance Curves

Unless Otherwise Specified

(Continued)
20

102

10s
100s

10

1ms
10ms
1
TC = 25oC
TJ = MAX RATED
SINGLE PULSE

0.1
1

16
VGS = 5.5V
12

VGS = 5.0V

4
VGS = 4.5V

DC

VGS = 4.0V

0
102

10
VDS , DRAIN TO SOURCE VOLTAGE (V)

103

50

250

VDS 50V
5 80s
PULSE TEST

VGS = 6.0V

16
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

200

102

VGS = 10V

VGS = 5.5V
12

VGS = 5.0V

2
10
5
2
1
5

VGS = 4.0V

3
6
9
12
VDS , DRAIN TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 150oC

2
0.1

VGS = 4.5V
15

2
10-2

FIGURE 6. SATURATION CHARACTERISTICS

2
4
6
8
VGS , GATE TO SOURCE VOLTAGE (V)

10

FIGURE 7. TRANSFER CHARACTERISTICS

3.0

2.0
80s PULSE TEST
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE

DRAIN TO SOURCE ON RESISTANCE

150

FIGURE 5. OUTPUT CHARACTERISTICS

80s PULSE TEST

100

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

20

80s PULSE TEST

VGS = 6.0V

OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

103

1.6
VGS = 10V
1.2

0.8
VGS = 20V
0.4

0
0

12

24
36
ID , DRAIN CURRENT (A)

48

60

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

ID = 13A
VGS = 10V
2.4

1.8

1.2

0.6

0
-60

-40

-20

20

40

60

80

100 120 140 160

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF450
Typical Performance Curves

(Continued)
10000

ID = 250A

1.15

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD

8000
C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

1.25

Unless Otherwise Specified

1.05

0.95

0.85

6000
CISS

4000

COSS
2000
CRSS

0.75
-60

-40

-20

20

40

60

80

100 120 140 160

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

ISD, SOURCE TO DRAIN CURRENT (A)

TJ = 25oC

16

12

TJ = 150oC

0
0

102

102

VDS 50V
80s PULSE TEST

8
12
ID , DRAIN CURRENT (A)

16

5
2
10
5

TJ = 150oC

TJ = 25oC

2
1
5
2
0.1
0

20

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

0.5
1.0
1.5
2.0
VSD , SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
VGS, GATE TO SOURCE VOLTAGE (V)

gfs, TRANSCONDUCTANCE (S)

20

5
10
2
5
VDS , DRAIN TO SOURCE VOLTAGE (V)

ID = 13A
FOR TEST CIRCUIT, SEE FIGURE 18
16
VDS = 100V
VDS = 250V

12

VDS = 400V
8

0
0

25
50
75
100
Qg(TOT) , TOTAL GATE CHARGE (nC)

125

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2.5

IRF450
Test Circuits and Waveforms
VDS
BVDSS
L

tP

VARY tP TO OBTAIN

IAS

RG

REQUIRED PEAK IAS

VGS

VDS
VDD

VDD

DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

0.2F

50%
PULSE WIDTH

10%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

12V
BATTERY

50%

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd

0.3F

VGS

Qgs
D
VDS
DUT

0
Ig(REF)

0
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORMS

IRF450

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