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05, design
vaues that achieve a fair compromise between low sidelobe
levels, beamwidth and aperture size. The semi-flare angle of
the experimental horn was 39 and an experimental radiation
pattern without channel inserts is included for comparison.
The channel sections effectively reduce the radiation sidelobe
levels to a level comparable with those predicted. The inserts
increase experimental 3dB beamwidths, but these lie within
theoretical limits imposed by assumed constant and quadratic
phase across the aperture. The aperture phase error of the
original horn, which causes splitting and broadening of the
main beam at the higher frequency of Fig. 30, is apparently
improved by the modification, which will enable the design of
horns with larger apertures and shorter axial lengths than
standard sectoral horns.
Conclusion: Fitting channel sections to an E-sectoral horn
results in effective suppression of sidelobe levels in the radiation pattern. A finite difference analysis technique enables a
quantitative explanation of measured radiation characteristics
and the prediction of optimum designs for single frequency
and broadband operation.
0. W. ATA
School of Electronic Engineering Science
University of Wales Bangor
Bangor, Gwynedd, LL57 I U T , United Kingdom
T. M. BENSON
Department of Electrical and Electronic Engineering
Uniuersity of Nottingham
Nottingham, NG7 2RD, United Kingdom
A. MARINCIC
Faculty of Electrical Engineering
University of Belgrade
Bulevar Revolucige 73, IlooO Belgrade, Yugoslauia
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current,
pl1ll)
rn A
Fig. 1 Light output against input current for single stripe InGnAslGaAs
laser diode
lo= 12%
ZI
Single mode laser diodes have k e n fabricated from pseudnmorphic InGaAs/NGaAs quantum well epitaxial material
operating up to 350mW CW. The laser output is a single
transverse and longitudinal mode to 180mW. while the spectral output is centred near 910nm.
150 mW c w
100 rnW c w
50 m W c w
233
-.
~-
-~
._
MUOR, I. S., GULDO, L. I., Hsw, K. C., HOUINYAK, N., STUTUTNS, W.,
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2 5 0 m W cw
910
900
920
wavelength, nm
Tim Earls, TON Tally, David Mehuys, Rob Waarts and Sean
Ogarrio for their support.
D. F. WELCH
M. CARDINAL
B. STREIFER
D. SCIFRES
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1 WELCH, D. F., mmsm, w., and SCIPRES, D. R.: High power single
mode laser diodes. SPIE Laser Diode Technology and Applications, 1989,losJ, pp. 54-60
2 SDL-5410 commercially available lOOmW CW, single mode laser
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P. L., and STREIFW, w.:
Gain characteristics of strained quantum well lasers, to be
publied in AppI. Phys. Letts.
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E, and ME 0.:Band structure engineering of
semiconductor lasers for o p t i d mmmunications, J. Lightwave
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I
standard airline
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