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FDP80N06
tm
N-Channel MOSFET
60V, 80A, 10m
Features
Description
Fast switching
Improved dv/dt capability
RoHS compliant
G
G D S
TO-220
S
Parameter
VGSS
Ratings
60
Units
V
20
80
65
ID
Drain Current
IDM
Drain Current
- Pulsed
EAS
IAR
Avalanche Current
(Note 1)
80
EAR
(Note 1)
17.6
mJ
dv/dt
4.5
V/ns
(Note 1)
320
(Note 2)
480
mJ
(Note 3)
(TC = 25oC)
176
1.17
W/oC
-55 to +175
oC
300
oC
Ratings
Units
PD
Power Dissipation
TJ, TSTG
TL
Thermal Characteristics
Symbol
Parameter
RJC
0.85
RJA
62.5
C/W
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September 2007
Device Marking
FDP80N06
Device
FDP80N06
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
60
0.075
V/oC
A
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
10
IGSS
100
2.0
--
4.0
8.5
10
67
ID = 250A, Referenced to 25 C
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Forward Transconductance
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
2450
3190
pF
910
1190
pF
145
190
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
32
75
ns
259
528
ns
136
282
ns
113
236
ns
57
74
nC
15
nC
24
nC
80
ISM
320
VSD
1.4
trr
64
ns
Qrr
127
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C
3: ISD 80A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP80N06 Rev. A
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500
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
*Notes:
1. VDS = 20V
2. 250s Pulse Test
100
ID,Drain Current[A]
100
ID,Drain Current[A]
10
-55 C
175 C
25 C
10
*Notes:
1. 250s Pulse Test
2. TC = 25 C
1
0.1
1
VDS,Drain-Source Voltage[V]
10
4
6
8
VGS,Gate-Source Voltage[V]
0.03
500
0.02
VGS = 10V
0.01
VGS = 20V
100
175 C
25 C
10
*Notes:
1. VGS = 0V
*Note: TJ = 25 C
0.00
0
80
160
240
ID, Drain Current [A]
1
0.0
320
4500
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
3000
Crss
1500
0
0.1
FDP80N06 Rev. A
1
10
VDS, Drain-Source Voltage [V]
2.0
10
Ciss
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
6000
Capacitances [pF]
10
RDS(ON) [],
Drain-Source On-Resistance
0.4
0.02
VDS = 15V
VDS = 30V
VDS = 48V
2
*Note: ID = 80A
30
15
30
45
Qg, Total Gate Charge [nC]
60
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RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1ms
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
75
10ms
DC
*Notes:
1. VGS = 10V
2. ID = 40A
90
100s
10
1.0
30s
100
1.5
0.5
-100
200
2.0
*Notes:
60
45
30
0.1
1. TC = 25 C
15
2. TJ = 175 C
3. Single Pulse
0.01
1
10
VDS, Drain-Source Voltage [V]
0
25
80
50
75
100
125
150
o
TC, Case Temperature [ C]
175
2
1
0.5
0.2
0.1
0.1
t1
0.02
0.01
t2
0.01
*Notes:
o
Single pulse
1E-3
-5
10
FDP80N06 Rev. A
PDM
0.05
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
10
10
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FDP80N06 Rev. A
www.fairchildsemi.com
FDP80N06 Rev. A
www.fairchildsemi.com
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP80N06 Rev. A
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2.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
8
FDP80N06 Rev. A
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