STB100N10F7N

STB100N10F7, STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE
Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220
Datasheet - production data
Features
TAB
TAB
Order codes
VDS
RDS(on)
max
ID
PTOT
80 A
120 W
80 A
120W
STF100N10F7
45 A
30 W
STP100N10F7
80A
150 W
DPAK
D2PAK
STB100N10F7
STD100N10F7
TAB
100 V
3
2
TO-220
TO-220FP
Figure 1. Internal schematic diagram
0.008
Ultra low on-resistance

100% avalanche tested
Applications
Switching applications
'7$%
Description
These devices utilize the 7th generation of design
rules of STs proprietary STripFET technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
*
6
$0Y
Table 1. Device summary

Order codes
Marking
Packages
Packaging
D2PAK
Tape and reel
DPAK
Tape and reel
STF100N10F7
TO-220FP
Tube
STP100N10F7
TO-220
Tube
STB100N10F7
STD100N10F7
100N10F7
November 2013
This is information on a product in full production.
DocID023737 Rev 4
1/23
www.st.com
23
Contents
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
.............................................. 9
DocID023737 Rev 4
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
DPAK
TO-220FP
TO-220
Unit
D2PAK
VDS
Drain-source voltage
100
VGS
Gate-source voltage
20
ID
45
80
Drain current (continuous) at TC = 100 C
62
32(1)
70
Drain current (pulsed)
320
180
320
Total dissipation at TC = 25 C
120
30
150
Drain current (continuous) at TC = 25 C
ID
IDM(2)
PTOT
80
(1)
(1)
TJ
Operating junction temperature
C
-55 to 175
Tstg
Storage temperature
1. This value is limited by package..

2. Pulse width limited by safe operating area.
Table 3. Thermal resistance

Value
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junctionambient
Rthj-pcb (1)
Unit
D2PAK
DPAK
TO-220FP
TO-220
1.25
Thermal resistance junction-pcb
62.50
30
50
C/W
C/W
C/W
1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 sec
Table 4. Avalanche characteristics

Symbol
EAS
Parameter
Single pulse avalanche energy
(TJ = 25 C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V)
DocID023737 Rev 4
Value
Unit
400
mJ
3/23
Electrical characteristics
(TCASE=25 C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage (VGS= 0)
ID = 250 A
IDSS
Zero gate voltage drain

current (VGS = 0)
VDS = 100 V
VDS = 100 V; TC=125 C
1
100
A
A
IGSS
Gate body leakage current

(VDS = 0)
VGS = 20 V
100
nA
Gate threshold voltage
VDS= VGS, ID = 250 A
4.5
Static drain-source onresistance
For D2PAK, DPAK and

TO-220
VGS= 10 V, ID= 40 A
For TO-220-FP
VGS= 10 V, ID= 22.5 A
0.0068
0.008
Min.
Typ.
Max.
Unit
4369
pF
823
pF
36
pF
61
nC
26
nC
13
nC
Min.
Typ.
Max.
Unit
27
ns
40
ns
46
ns
15
ns
V(BR)DSS
VGS(th)
RDS(on)
100
2.5
Table 6. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS =50 V, f=1 MHz,

VGS=0
VDD=50 V, ID = 80 A
VGS =10 V
Figure 18
Table 7. Switching times

Symbol
td(on)
tr
td(off)
tf
4/23
Parameter
Test conditions
Turn-on delay time

Rise time
Turn-off delay time
VDD=50 V, ID= 40 A,
RG=4.7 , VGS= 10 V
Figure 17
Fall time
DocID023737 Rev 4
Table 8. Source drain diode

Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
Source-drain current
80
(1)
Source-drain current (pulsed)
320
(2)
Forward on voltage
ISD = 80 A, VGS=0
1.2
trr
Reverse recovery time
77
ns
Qrr
Reverse recovery charge
146
nC
IRRM
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/s,
VDD=80 V, Tj=150 C
ISD
ISDM
VSD
1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300 s, duty cycle 1.5%
DocID023737 Rev 4
5/23
2.1
Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK
Figure 3. Thermal impedance for DPAK
AM15754v1
)
on
S(
O
Li per
m at
ite i o
d ni
by n
m this
ax a
R rea
is
ID
(A)
100
100s
10
1ms
1
Tj=175C
Tc=25C
Single pulse
0.1
0.1
10
10ms
100
VDS(V)
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM15755v1
)
on
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
100
10
100s
1ms
1
Tj=175C
Tc=25C
Single pulse
0.1
0.1
10
10ms
100
VDS(V)
Figure 6. Safe operating area for D2PAK and

TO-220
AM15756v1
AM15761v1
=0.5
)
on
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
Figure 7. Thermal impedance for D2PAK and

TO-220
100
0.2
0.05
0.02
0.01
0.1
10
100s
10 -1
1ms
Single pulse
1
Tj=175C
Tc=25C
Single pulse
0.1
0.1
6/23
10
10ms
100
VDS(V)
10 -2
10 -5
DocID023737 Rev 4
10 -4
10 -3
10 -2
10 -1
tp(s)
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM15757v1
ID
(A)
VGS=10V
300
AM15745v1
ID
(A)
VDS=5V
300
9V
250
250
8V
200
200
7V
150
150
100
100
6V
50
50
5V
0
0
VDS(V)
Figure 10. Normalized V(BR)DSS vs temperature

AM15747v1
V(BR)DSS
(norm)
ID=1mA
1.04
10 VGS(V)
Figure 11. Static drain-source on-resistance

AM15748v1
RDS(on)
(m)
14.0
VGS=10V
12.0
1.02
10.0
8.0
6.0
0.98
4.0
0.96
2.0
0.94
-55 -30 -5
0.0
20 45 70 95 120
TJ(C)
Figure 12. Gate charge vs gate-source voltage

AM15758v1
VGS
(V)
VDD=50V
12
20
40
60
80
100
ID(A)
Figure 13. Capacitance variations

AM15759v1
C
(pF)
5000
ID=80A
Ciss
10
4000
8
3000
6
2000
4
1000
2
0
0
20
40
60
Qg(nC)
DocID023737 Rev 4
0
0
10 20 30 40 50 60 70 80
Coss
Crss
VDS(V)
7/23
Figure 14. Normalized gate threshold voltage vs

temperature
AM15746v1
VGS(th)
Figure 15. Normalized on-resistance vs

temperature
AM15760v1
RDS(on)
(norm)
(norm)
ID=40A
1.04
ID= 250 A
1.8
1.02
1.6
1
1.4
0.98
1.2
1
0.96
0.8
0.94
0.6
0.92
-55 -30 -5
0.4
-55 -30 -5
20 45 70 95 120
TJ(C)
Figure 16. Source-drain diode forward

characteristics
AM15749v1
VSD (V)
TJ=-55C
1.1
1
0.9
TJ=25C
0.8
0.7
TJ=150C
0.6
0.5
0
8/23
20
40
60
80
100
ISD(A)
DocID023737 Rev 4
20 45 70 95 120
TJ(C)
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit

VDD
12V
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
Figure 19. Test circuit for inductive load

switching and diode recovery times
D.U.T.
FAST
DIODE
AM01469v1
Figure 20. Unclamped inductive load test circuit
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform

ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
DocID023737 Rev 4
10%
AM01473v1
9/23
Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 23. DPAK (TO-263) drawing
0079457_T
10/23
DocID023737 Rev 4
Figure 24. DPAK footprint(a)

16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
DocID023737 Rev 4
11/23
Table 9. DPAK (TO-252) mechanical data

mm
Dim.
Min.
Typ.
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
0.64
0.90
b4
5.20
5.40
0.45
0.60
c2
0.48
0.60
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
2.28
e1
4.40
4.60
9.35
10.10
1.00
1.50
(L1)
2.80
L2
0.80
L4
0.60
1.00
R
V2
12/23
Max.
0.20
0
DocID023737 Rev 4
Figure 25. DPAK (TO-252) drawing
0068772_K
DocID023737 Rev 4
13/23

Figure 26. DPAK footprint (b)
Footprint_REV_K
b. All dimensions are in millimeters
14/23
DocID023737 Rev 4
Table 10. TO-220FP mechanical data

mm
Dim.
Min.
Typ.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.7
0.75
F1
1.15
1.70
F2
1.15
1.70
4.95
5.2
G1
2.4
2.7
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9.3
Dia
3.2
DocID023737 Rev 4
15/23

Figure 27. TO-220FP drawing
7012510_Rev_K_B
16/23
DocID023737 Rev 4
Table 11. TO-220 type A mechanical data

mm
Dim.
Min.
Typ.
Max.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
DocID023737 Rev 4
17/23

Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
18/23
DocID023737 Rev 4
Packaging mechanical data

Table 12. DPAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
10.5
10.7
B0
15.7
15.9
1.5
1.5
1.6
12.8
D1
1.59
1.61
20.2
1.65
1.85
24.4
11.4
11.6
100
K0
4.8
5.0
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
50
0.25
0.35
23.7
24.3
330
13.2
26.4
30.4
Table 13. DPAK (TO-252) tape and reel mechanical data

Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
B0
10.4
10.6
1.5
12.1
12.8
1.6
20.2
16.4
50
B1
Min.
Max.
330
13.2
1.5
D1
1.5
1.65
1.85
7.4
7.6
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
DocID023737 Rev 4
18.4
22.4
19/23
Table 13. DPAK (TO-252) tape and reel mechanical data (continued)
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
P2
1.9
2.1
40
0.25
0.35
15.7
16.3
Min.
Max.
Figure 29. Tape

10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
E
F
B1
K0
For machine ref. only

including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
Bending radius
User direction of feed
AM08852v1
20/23
DocID023737 Rev 4
Figure 30. Reel

T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
DocID023737 Rev 4
21/23
Revision history
Revision history
Table 14. Document revision history
Date
Revision
05-Oct-2012
First release.
Inserted device in TO-220FP.

Updated title and features on the cover page, Table 1: Device
summary, Table 2: Absolute maximum ratings, Table 3: Thermal
resistance and Table 5: On/off states accordingly.
Updated Table 6: Dynamic, Table 7: Switching times, Table 8:
Source drain diode and Section 4: Package mechanical data.
Added Section 5: Packaging mechanical data.
Modified: the entire typical values in Table 6, tf typical value

inTable 7, VSD and typical values for trr, qrr, IRRM
Inserted:Table 4: Avalanche characteristics and Section 2.1:
Electrical characteristics (curves)
Minor text changes
Inserted device in D2PAK.

Updated title and features on the cover page, Table 1: Device
summary, Table 2: Absolute maximum ratings, Table 3: Thermal
resistance and Table 5: On/off states accordingly.
Updated Table 6: Dynamic, Section 4: Package mechanical data
and Section 5: Packaging mechanical data.
07-Feb-2013
29-Apr-2013
25-Nov-2013
22/23
Changes
DocID023737 Rev 4
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right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
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All ST products are sold pursuant to STs terms and conditions of sale.
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DocID023737 Rev 4
23/23

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STB100N10F7, STD100N10F7,

Figure 1. Internal schematic diagram

Ultra low on-resistance

Table 1. Device summary

Tape and reel

Tape and reel

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Drain current (continuous) at TC = 100 C

Drain current (pulsed)

Drain current (continuous) at TC = 25 C

Operating junction temperature

1. This value is limited by package..

Table 3. Thermal resistance

Thermal resistance junction-case

Thermal resistance junctionambient

Thermal resistance junction-pcb

1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 sec

Table 4. Avalanche characteristics

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Zero gate voltage drain

Gate body leakage current

Gate threshold voltage

VDS= VGS, ID = 250 A

Static drain-source onresistance

For D2PAK, DPAK and

Total gate charge

VDS =50 V, f=1 MHz,

Table 7. Switching times

Turn-on delay time

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Table 8. Source drain diode

Source-drain current (pulsed)

Reverse recovery time

Reverse recovery charge

Reverse recovery current

1. Pulse width limited by safe operating area

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Electrical characteristics (curves)

Figure 3. Thermal impedance for DPAK

Figure 4. Safe operating area for TO-220FP

Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for D2PAK and

Figure 7. Thermal impedance for D2PAK and

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Figure 8. Output characteristics

Figure 9. Transfer characteristics

Figure 10. Normalized V(BR)DSS vs temperature

Figure 11. Static drain-source on-resistance

Figure 12. Gate charge vs gate-source voltage

Figure 13. Capacitance variations

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Figure 14. Normalized gate threshold voltage vs

Figure 15. Normalized on-resistance vs

Figure 16. Source-drain diode forward

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

Figure 18. Gate charge test circuit

Figure 19. Test circuit for inductive load

Figure 20. Unclamped inductive load test circuit

Figure 21. Unclamped inductive waveform

Figure 22. Switching time waveform