AO4421

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4421 uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4412 is Pb-free (meets ROHS & Sony 259
specifications). AO4421L is a Green Product
ordering option. AO4421 and AO4421L are
electrically identical.

VDS (V) = -60V

ID = -6.2 A (VGS = -10V)
RDS(ON) < 40m (VGS = -10V)
RDS(ON) < 50m (VGS = -4.5V)

SOIC-8
Top View
S
S
S
G

D
D
D
D

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25C

Continuous Drain
Current A
Pulsed Drain Current

ID
IDM

TA=70C
B

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

20

-40
3.1

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

-5

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Units
V

-6.2

TA=25C
Power Dissipation A

Maximum
-60

RJA
RJL

Typ
24
54
21

Max
40
75
30

Units
C/W
C/W
C/W

AO4421, AO4421L

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VGS(th)

Gate Threshold Voltage

On state drain current

ID(ON)
RDS(ON)
gFS
VSD
IS

Conditions

Min

ID=-250A, VGS=0V
VDS=-48V, VGS=0V

-60

VDS=0V, VGS=20V
VDS=VGS ID=-250A

-1

VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.2A

Static Drain-Source On-Resistance

TJ=125C

Output Capacitance

VGS=0V, VDS=-30V, f=1MHz

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Qgd
tD(on)

Gate Drain Charge

Turn-On DelayTime

tr
tD(off)
tf
trr
Qrr

Turn-On Rise Time

Turn-Off DelayTime
Turn-Off Fall Time

Units
V
A

100

nA

-2

-3

32
53

40
70

40

50

-1
-4.2

S
V
A

-40

VGS=-4.5V, ID=-5A
Forward Transconductance
VDS=-5V, ID=-6.2A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge

Max

-1
-5

TJ=55C

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Crss
Rg

Typ

VGS=-10V, VDS=-30V, ID=-6.2A

VGS=-10V, VDS=-30V, RL=4.7,

RGEN=3

IF=-6.2A, dI/dt=100A/s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/s

18
-0.74

2417
179
120
1.9

2900

2.3

pF
pF
pF

46.5

55

nC

22.7

nC

9.1
9.2

nC
nC

9.8
6.1
44
12.7
34
47

ns
ns
ns
ns
42

ns
nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The
SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4421, AO4421L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30

25
-10V

-4V
-4.5V
-5V

20

-3.5V

-6V

20

15

-ID(A)

-ID (A)

VDS=-5V

25

10

15
10
125C

VGS=-3V

5
25C

0
0

1.5

45
Normalized On-Resistance

RDS(ON) (m)

2.5

3.5

2.00
VGS=-4.5V

40

35
VGS=-10V

VGS=-10V
ID=-6.2A

1.80
1.60

VGS=-4.5V
ID=-5A

1.40
1.20
1.00
0.80

30
0

10

15

20

25

100

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01

90

ID=-6.2A

80

1.0E+00
125C

1.0E-01

70

125C

60

1.0E-02

-IS (A)

RDS(ON) (m)

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics

1.0E-03

50

1.0E-04
25C

40
1.0E-05

25C

30

1.0E-06

20
2

6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AO4421, AO4421L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

3500

10
VDS=-30V
ID=-6.2A

3000
Capacitance (pF)

-VGS (Volts)

8
6
4

Ciss

2500
2000
1500
1000

Coss

Crss

500
0

0
0

10

20

30

40

50

-Qg (nC)
Figure 7: Gate-Charge Characteristics

100s
1ms
0.1s

10s

50

60

30
Power (W)

-ID (Amps)

40

TJ(Max)=150C
TA=25C

RDS(ON)
limited

10ms

1s

20

10
10s

DC

0.1
0.1

30

40

TJ(Max)=150C, TA=25C

1.0

20

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

10.0

10

10

100

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

0
0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

0.01

100

1000