FCP7N60 N-Channel Mosfet

TM
FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
Description
650V @TJ = 150C
SuperFETTM is, Farichilds proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
Typ. RDS(on) = 0.53

Ultra low gate charge (typ. Qg = 25nC)
Low effective output capacitance (typ. Coss.eff = 60pF)
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
100% avalanche tested
D
!
"
G!
G DS
TO-220
! "
TO-220F
GD S
"
"
Absolute Maximum Ratings

Symbol
Parameter
FCP7N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FCPF7N60
Unit
7
4.4
7*
4.4*
A
A
21
21*
600
(Note 1)
30
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25C)
- Derate above 25C
83
0.67
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds
31
0.25
W
W/C
-55 to +150
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP7N60
FCPF7N60
Unit
RJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
1.5
4.0
C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. A
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
SuperFET
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP7N60
FCP7N60
TO-220
50
FCPF7N60
FCPF7N60
TO-220F
50
Electrical Characteristics
Symbol
TC = 25C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
600
--
--
VGS = 0V, ID = 250A, TJ = 150C
--
650
--
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250A, Referenced to 25C
--
0.6
--
V/C
BVDS
Drain-Source Avalanche Breakdown

Voltage
VGS = 0V, ID = 7A
--
700
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V

VDS = 480V, TC = 125C
---
---
1
10
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
--
0.53
0.6
--
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3.5A
gFS
Forward Transconductance
VDS = 40V, ID = 3.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V

VDD = 300V, ID = 7A
RG = 25
VDS = 25V, VGS = 0V,

f = 1.0MHz
--
710
920
pF
--
380
500
pF
--
34
--
pF
--
22
29
pF
--
60
--
pF
--
35
80
ns
--
55
120
ns
--
75
160
ns
--
32
75
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 7A
VGS = 10V
(Note 4, 5)
--
23
30
nC
--
4.2
5.5
nC
--
11.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
21
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 7A
--
--
1.4
trr
Reverse Recovery Time
360
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 7A
dIF/dt =100A/s
--
Qrr
--
4.5
--
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID , Drain Current [A]
ID, Drain Current [A]
10
10
10
150C
25C
10
-55C
Notes :
1. 250s Pulse Test
2. TC = 25C
-1
Note
1. VDS = 40V
2. 250s Pulse Test
10
-1
10
-1
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
IDR , Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
2.0
1.8
1.6
1.4
VGS = 10V
1.2
1.0
0.8
0.6
VGS = 20V
0.4
0.2
10
10
150C
25C
Notes :
1. VGS = 0V
2. 250s Pulse Test
Note : TJ = 25C
-1
0.0
0
10
15
10
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted)
12
Coss = Cds + Cgd
VDS = 100V
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Crss = Cgd
2000
Coss
1000
Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
Crss
0
-1
10
10
VDS = 400V
8
2
Note : ID = 7A
10
0
0
10
15
20
25
QG, Total Gate Charge [nC]
3
VDS = 250V
10
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250A
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 3.5 A
0.8
-100
-50
50
100
150
0.0
-100
200
-50
TJ, Junction Temperature [C]
10
Operation in This Area

is Limited by R DS(on)
10 ms
0
Notes :
1. TC = 25C
-1
10
10
150
200
10
Operation in This Area

is Limited by R DS(on)
100 us
1 ms
10 ms
10
100 ms
DC
Notes :
1. TC = 25C
-1
10
2. TJ = 150C
2. TJ = 150C
3. Single Pulse
3. Single Pulse
-2
10
10
100 us
1 ms
DC
10
100
Figure 9-2. Maximum Safe Operating Area

for FCPF7N60
Figure 9-1. Maximum Safe Operating Area

for FCP7N60
10
50
TJ, Junction Temperature [C]
-2
10
10
10
10
10
10
10
10
Figure 10. Maximum Drain Current

vs. Case Temperature
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
TC, Case Temperature [? ]
4
Typical Performance Characteristics (Continued)
Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FCP7N60
10
ZJC(t), Thermal Response
D = 0 .5
0 .2
N o te s :
1 . Z JC ( t) = 1 .5 C /W M a x .
0 .1
10
-1
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 5
3 . T J M - T C = P D M * Z JC ( t)
0 .0 2
0 .0 1
PDM
10
-2
10
t1
s in g le p u ls e
-5
10
-4
t2
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
ZJC(t), Thermal Response
D = 0 .5
10
0 .2
0 .1
N o te s :
1 . Z JC ( t) 4 .0 C /W M a x.
0 .0 5
10
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z JC ( t)
0 .0 2
-1
0 .0 1
PDM
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
5
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
6
VDS (t)
VDD
DUT
10V
ID (t)
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
7
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
10.08 0.30
(1.00)
13.08 0.20
(45
1.27 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
8
Mechanical Dimensions
(Continued)
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
Dimensions in Millimeters
9
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
10
TRADEMARKS

FCP7N60 N-Channel Mosfet

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TM

650V @TJ = 150C

SuperFETTM is, Farichilds proprietary, new generation of high

Typ. RDS(on) = 0.53

100% avalanche tested

Absolute Maximum Ratings

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

*Drain current limited by maximum junction temperature

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2005 Fairchild Semiconductor Corporation

FCP7N60 / FCPF7N60 Rev. A

FCP7N60 / FCPF7N60 600V N-Channel MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A, TJ = 25C

VGS = 0V, ID = 250A, TJ = 150C

Breakdown Voltage Temperature

ID = 250A, Referenced to 25C

Drain-Source Avalanche Breakdown

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

Gate Threshold Voltage

VDS = VGS, ID = 250A

VGS = 10V, ID = 3.5A

VDS = 40V, ID = 3.5A

Reverse Transfer Capacitance

VDS = 480V, VGS = 0V, f = 1.0MHz

Effective Output Capacitance

VDS = 0V to 400V, VGS = 0V

VDS = 25V, VGS = 0V,

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

FCP7N60 / FCPF7N60 600V N-Channel MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID , Drain Current [A]

ID, Drain Current [A]

VGS , Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]