VDSS

HiPerFETTM Power MOSFETs

ISOPLUS247TM

IXFR 50N50
IXFR 55N50

(Electrically Isolated Back Surface)

ID25

RDS(on)

100 m

90 m

500 V 43 A
500 V 48 A
trr 250 ns

Single Die MOSFET

Maximum Ratings

ISOPLUS 247TM

Symbol

Test Conditions

VDSS
VDGR

TJ = 25C to 150C
TJ = 25C to 150C; RGS = 1 M

500
500

V
V

VGS
VGSM

Continuous
Transient

20
30

V
V

ID25

TC = 25C

IDM

TC = 25C, Pulse width limited by TJM

IAR

TC = 25C

43
48
200
220
50
55

A
A
A
A
A
A

EAR

TC = 25C

60

mJ

EAS

TC = 25C

dv/dt

IS IDM, di/dt 100 A/s, VDD VDSS

TJ 150C, RG = 2

V/ns

PD

TC = 25C

400

-40 ... +150

150
-40 ... +150

C
C
C

300

2500

V~

TJ
TJM
Tstg
TL

1.6 mm (0.063 in.) from case for 10 s

VISOL

50/60 Hz, RMS

50N50
55N50
50N50
55N50
50N50
55N50

t = 1 min

Weight

Isolated back surface*

G = Gate
S = Source

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

VDSS

VGS = 0 V, ID = 1mA

500

VGS(th)

VDS = VGS, ID = 8mA

2.5

4.5 V

IGSS

VGS = 20 V, VDS = 0

Features
l

l
l

IDSS

VDS = VDSS
VGS = 0 V

TJ = 25C
TJ = 125C

RDS(on)

VGS = 10 V, ID = IT
Note 1

50N50
55N50

2002 IXYS All rights reserved

25 A
2 mA
100 m
90 m

Silicon chip on Direct-Copper-Bond

substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier

Applications

l
l
l
l

200 nA

D = Drain

* Patent pending

Symbol

DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control

Advantages
l
l
l

Easy assembly
Space savings
High power density

98588B (04/02)

IXFR 50N50
IXFR 55N50
Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

gfs

V DS = 10 V; ID = IT

Note 1

45

9400

pF

1280

pF

Crss

460

pF

td(on)

45

ns

60

ns

Ciss
Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

tr

VGS = 10 V, VDS = 0.5 VDSS, ID = IT

td(off)

RG = 1 (External),

120

ns

45

ns

330

nC

55

nC

155

nC

tf
Qg(on)
Qgs

VGS = 10 V, VDS = 0.5 VDSS, ID = IT

Qgd

0.30

RthJC
0.15

RthCK

Source-Drain Diode

K/W
K/W

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

Symbol

Test Conditions

IS

VGS = 0 V

55N50
50N50

55
50

A
A

ISM

Repetitive;
pulse width limited by TJM

55N50
50N50

220
200

A
A

VSD

IF = IS, VGS = 0 V

1.5

250

ns

t rr
QRM

ISOPLUS 247 OUTLINE

IF = 25A,-di/dt = 100 A/s, VR = 100 V

1.0

10

IRM

See IXFK55N50 data sheet for

characteristic curves.

Note: 1. Pulse test, t 300 s, duty cycle d 2 %

2. IT test current:
50N50 IT = 25A
55N50 IT = 27.5A

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592
4,850,072

4,881,106
4,931,844

5,017,508
5,034,796

5,049,961
5,063,307

5,187,117
5,237,481

5,486,715
5,381,025

6,306,728B1

WWW.ALLDATASHEET.COM

Copyright Each Manufacturing Company.

All Datasheets cannot be modified without permission.

This datasheet has been download from :

www.AllDataSheet.com

100% Free DataSheet Search Site.

Free Download.
No Register.
Fast Search System.
www.AllDataSheet.com