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General Description
Product Summary
VDS
30V
1.7A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 55m
< 65m
< 85m
SC-70
(SOT-323)
Top View
D
Bottom View
G
S
VGS
TA=25C
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Steady-State
Steady-State
0.35
0.22
TJ, TSTG
Symbol
t 10s
15
PD
TA=70C
12
1.3
IDM
TA=25C
Units
V
1.7
ID
TA=70C
C
Maximum
30
RJA
RJL
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-55 to 150
Typ
300
340
280
Max
360
425
320
Units
C/W
C/W
C/W
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AO7410
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Conditions
Min
ID=250A, VGS=0V
TJ=55C
VDS=0V, VGS=12V
VDS=VGS ID=250A
0.5
ID(ON)
VGS=10V, VDS=5V
15
Units
V
VGS(th)
100
nA
1.5
45
55
70
84
VGS=4.5V, ID=1.5A
50
65
VGS=2.5V, ID=1A
61
85
14
1
1.5
VGS=10V, ID=1.7A
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
TJ=125C
gFS
Forward Transconductance
VDS=5V, ID=3.6A
VSD
IS=1A,VGS=0V
IS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
0.75
185
235
285
pF
25
35
45
pF
10
18
25
pF
0.9
1.8
2.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
12
4.7
nC
0.95
nC
Coss
Output Capacitance
Crss
Rg
Gate resistance
Qgs
nC
Qgd
1.6
nC
tD(on)
Turn-On DelayTime
3.5
ns
tr
1.5
ns
tD(off)
Turn-Off DelayTime
17.5
ns
tf
2.5
ns
trr
Qrr
8.5
11
2.6
3.5
ns
nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Page 2 of 5
AO7410
10
10V
VDS=5V
3V
2.5V
12
4.5V
9
ID(A)
ID (A)
125C
6
VGS=2.0V
3
0
0
25C
80
1.5
2.5
Normalized On-Resistance
1.8
VGS=2.5V
70
RDS(ON) (m
)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
60
VGS=4.5V
50
40
VGS=10V
VGS=4.5V
ID=3A
1.6
1.4
VGS=10V
17
ID=4A
1.2
VGS=2.5V
ID=2A
5
2
10
0.8
30
0
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+02
ID=4A
1.0E+01
100
40
125C
80
60
IS (A)
RDS(ON) (m
)
1.0E+00
1.0E-01
125C
1.0E-02
1.0E-03
40
25C
25C
1.0E-04
1.0E-05
20
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO7410
400
VDS=15V
ID=4A
350
8
Capacitance (pF)
VGS (Volts)
300
6
250
Ciss
200
150
100
Coss
2
50
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25C
1000
RDS(ON)
limited
10s
100s
1.0
1ms
10ms
0.1
TJ(Max)=150C
TA=25C
Power (W)
ID (Amps)
10.0
100
10
10s
DC
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Z JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RJA=125C/W
0.1
PD
PD
0.01
Ton
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
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Page 4 of 5
AO7410
+ Vds
VDC
Qgs
Qgd
VDC
DUT
Vgs
Ig
Charge
DUT
Vgs
90 %
Vdd
VDC
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Isd
+
VD C
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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