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1674A
IRFIZ34E
HEXFET Power MOSFET
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VDSS = 60V
RDS(on) = 0.042
ID = 21A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Max.
Units
21
15
100
37
0.24
20
110
16
3.7
5.0
-55 to + 175
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
4.1
65
C/W
9/22/97
IRFIZ34E
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Min.
60
2.0
6.5
Typ.
0.052
7.0
49
31
40
IDSS
LD
4.5
LS
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
700
240
100
12
V(BR)DSS
V(BR)DSS/TJ
I GSS
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, I D = 1mA
0.042
S
VDS = 25V, ID = 16A
25
VDS = 60V, VGS = 0V
A
250
VDS = 48V, VGS = 0V, TJ = 150C
100
V GS = 20V
nA
-100
VGS = -20V
34
ID = 16A
6.8
nC VDS = 44V
14
VGS = 10V, See Fig. 6 and 13
VDD = 28V
I D = 16A
ns
RG = 18
6mm (0.25in.)
nH
G
from package
VGS = 0V
V
DS = 25V
pF
= 1.0MHz
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
21
showing the
A
G
integral reverse
100
p-n junction diode.
S
1.6
V
TJ = 25C, IS = 11A, VGS = 0V
57
86
ns
TJ = 25C, IF = 16A
130 200
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
t=60s, =60Hz
IRFIZ34E
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
10
4 .5V
2 0 s PU LSE W ID TH
TC = 2 5C
1
0.1
10
100
10
4 .5V
20 s PU L SE W ID TH
T C = 175 C
0.1
100
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )
2.4
TJ = 2 5 C
TJ = 1 7 5 C
10
VD S = 2 5 V
2 0 s PU L SE W ID TH
5
10
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
TOP
10
I D = 26 A
2.0
1.6
1.2
0.8
0.4
VG S = 1 0V
0.0
-60 -40 -20
20
40
60
80
IRFIZ34E
V GS
C iss
C rss
C is s C oss
C , C a p a c ita n c e (p F )
1000
=
=
=
=
20
0V,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
1200
I D = 1 6A
V DS = 4 4V
V DS = 2 8V
16
800
C o ss
12
600
400
C rs s
200
0
10
FO R TES T C IR CU IT
SEE FIG U R E 13
A
1
100
10
30
A
40
1000
1000
IS D , R e ve rs e D ra in C u rre n t (A )
20
100
100
TJ = 175 C
TJ = 25 C
10
10us
100us
10
1ms
VG S = 0 V
1
0.4
0.8
1.2
1.6
V S D , S ource-to-Drain Voltage (V )
2.0
TC = 25 C
TJ = 175 C
Single Pulse
1
1
10ms
10
100
1000
IRFIZ34E
RD
VDS
24
VGS
20
D.U.T.
RG
-VDD
10V
16
Pulse Width 1 s
Duty Factor 0.1 %
12
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( C)
10%
VGS
td(on)
tr
t d(off)
tf
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
IRFIZ34E
D.U.T.
RG
+
V
- DD
IAS
tp
0.01
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
250
L
VDS
TOP
BO TTOM
200
150
100
50
V D D = 2 5V
25
VDD
VDS
ID
6 .5A
11A
16 A
50
A
75
100
125
150
175
IAS
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
QG
.3F
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
IG
Charge
ID
+
V
- DS
IRFIZ34E
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
IRFIZ34E
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)
3.40 (.133 )
3.10 (.123 )
4.8 0 (.189)
4.6 0 (.181)
-A 3.70 (.145)
3.20 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2 .80 (.110)
2 .60 (.102)
LE AD A S SIGN M E N T S
1 - GA TE
2 - D R AIN
3 - SO U R C E
7 .10 (.280)
6 .70 (.263)
1.15 (.04 5)
M IN .
N O T ES :
1 D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982
3
2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-B-
13 .7 0 (.540)
13 .5 0 (.530)
C
A
1.40 (.05 5)
3X
1.05 (.04 2)
0.9 0 (.035)
3X 0.7 0 (.028)
0.25 (.010 )
3X
M
A M
0.48 (.019)
0.44 (.017)
2.85 (.112 )
2.65 (.104 )
2 .54 (.100)
2X
M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
A-B -C -D = 4.80 (.189 )
IN TE R N AT IO N AL
R E C TIFIER
L O GO
P AR T N U M BE R
IR FI8 4 0G
E 40 1 92 4 5
AS SE MB L Y
LOT CO DE
D AT E C O D E
(YYW W )
YY = YE AR
W W = W E EK
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http://www.irf.com/
Data and specifications subject to change without notice.
9/97