Datasheet k3325

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3325
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
ORDERING INFORMATION
The 2SK3325 is N-Channel DMOS FET device that features
PART NUMBER
PACKAGE
2SK3325
TO-220AB
2SK3325-S
TO-262
2SK3325-ZJ
TO-263
a low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge:
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
(TO-220AB)
Gate voltage rating: 30 V

Low on-state resistance
RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
TO-220AB, TO-262, TO-263 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V)
VDSS
500
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
30
ID(DC)
10
ID(pulse)
40
Total Power Dissipation (TC = 25C)
PT
85
Total Power Dissipation (TA = 25C)
PT
1.5
Channel Temperature
Tch
150
Drain Current (DC)

Drain Current (pulse)
Note1
Storage Temperature
Tstg
55 to +150
Single Avalanche Current
Note2
IAS
10
Single Avalanche Energy
Note2
EAS
10.7
mJ
(TO-262)
(TO-263)
Notes 1. PW 10 s, Duty Cycle 1 %

2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14264EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
1999, 2000
2SK3325
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 500 V, VGS = 0 V
100
Gate to Source Leakage Current
IGSS
VGS = 30 V, VDS = 0 V
100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
| yfs |
VDS = 10 V, ID = 5.0 A
2.0
RDS(on)
VGS = 10 V, ID = 5.0 A
0.68
VDS = 10 V, VGS = 0 V, f = 1 MHz
1200
pF
Gate to Source Cut-off Voltage

Forward Transfer Admittance
Drain to Source On-state Resistance
4.0
0.85
Input Capacitance
Ciss
Output Capacitance
Coss
190
pF
Reverse Transfer Capacitance
Crss
10
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V,
21
ns
RG = 10 , RL = 60
11
ns
td(off)
40
ns
tf
9.5
ns
22
nC
Rise Time
tr
Turn-off Delay Time

Fall Time
Total Gate Charge
QG
Gate to Source Charge
QGS
6.5
nC
Gate to Drain Charge
QGD
7.5
nC
IF = 10 A, VGS = 0 V
1.0
IF = 10 A, VGS = 0 V, di/dt = 50 A / s
0.5
2.6
Body Diode Forward Voltage
VDD = 400 V, VGS = 10 V, ID = 10 A
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.
RG = 25
PG.
VGS = 20 0 V
TEST CIRCUIT 2 SWITCHING TIME

D.U.T.
50
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS(on)
10 %
90 %
VDD
ID
90 %
90 %
BVDSS
IAS
ID
VGS
0
ID
VDS
ID
VDD
Starting Tch
= 1 s
Duty Cycle 1 %
TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA
PG.
50
10 %
10 %
Wave Form
RL
VDD
Data Sheet D14264EJ1V0DS00
td(on)
tr
ton
td(off)
tf
toff
2SK3325
TYPICAL CHARACTERISTICS(TA = 25 C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
20
40
80
60
100 120
140
80
60
40
20
160
20
40
10
Po
rD
ip
VGS = 20 V
at
io
Li
160
Pulsed
10
iss
1m
10
we
140
20
ID (pulse) P
ID - Drain Current - A
10
100 120
Figure4. DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE
Figure3. FORWARD BIAS SAFE OPERATING AREA

100
ID (DC)
80
Tc - Case Temperature - C
Tc - Case Temperature - C
d
ite )
im 0 V
)L 1
on
=
(
S
S
RD t VG
(a
60
ite
10 V
8.0 V
10
VGS = 6.0 V
Tc = 25 C
Single Pulse
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
12
16

Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
10
1
0.1
TA = 25 C
25 C
75 C
125 C
0.01
0.001
0.0001
0
10
15
VGS - Gate to Source Voltage - V
2SK3325
rth (t) - Transient Thermal Resistance - C/W
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100
Rth(ch-A) = 83.0 C/W
10
Rth(ch-C) = 1.47 C/W
1
0.1
Tc = 25 C
Single Pulse
0.01
0.0001
0.001
0.01
0.1
10
100
1000
IyfsI - Forward Transfer Admittance - S
Figure7. FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT
10
1
TA = 25 C
25 C
75 C
125 C
0.1
0.01
0.01
VDS = 10 V
Pulsed
0.1
10
100
RDS(on) - Drain to Source On-state Resistance -
PW - Pulse Width - s
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
2.0
ID = 10 A
5.0 A
2.0 A
1.0
0.0
Pulsed
0
Pulsed
2.0
1.0
10
25
100
4.0
VDS = 10 V
ID = 1 mA
3.0
2.0
1.0
0.0
50
50
100
150
Tch - Channel Temperature - C
20
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT
0
0.1
15
3.0
10
200
Figure12. SOURCE TO DRAIN DIODE

FORWARD VOLTAGE
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE
3.0
100
ISD - Diode Forward Current - A
2.0
ID = 10 A
ID = 5.0 A
1.0
VGS = 10 V
0.0
50
50
100
Pulsed
10
VGS = 10 V
VGS = 0 V
0.1
0.01
0.0
150
0.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
Figure13. CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE
Figure14. SWITCHING CHARACTERISTICS

1000
VGS = 0 V
f = 1.0 MHz
Ciss
1000
Coss
100
10
Crss
1
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
tr
tf
100
td(on)
td(off)
10
VDD = 150 V
VGS = 10 V
RG = 10
1
0.1
0.1
10
1.5
1.0
100
1
10
1000
100

Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Figure15. REVERSE RECOVERY TIME vs.

DRAIN CURRENT
800
1000
ID = 10 A
di/dt = 50 A/s
VGS = 0 V
trr - Reverse Recovery Time - ns
900
800
700
600
500
400
300
200
100
0.1
10
12
VDD = 400 V
250 V
100 V
600
500
VGS
10
400
300
200
4
VDS
100
0
14
700
100
10
2
15
20
2SK3325
0
25
QG - Gate Charge - nC
IF - Drain Current - A
2SK3325
Figure18. SINGLE AVALANCHE ENERGY vs

INDUCTIVE LOAD
Figure17. SINGLE AVALANCHE ENERGY vs

STARTING CHANNEL TEMPERATURE
ID(peak) = IAS
RG = 25
VGS = 20 V 0 V
VDD = 150 V
14
12
EAS = 10.7 mJ
10
8
6
4
2
0
25
50
75
100
125
150
175
100
IAS - Single Avalanche Energy - A
EAS - Single Avalanche Energy - mJ
16
10
IAS = 10 A
EAS
= 10
.7 m
0.1
10
Starting Tch - Starting Channel Temperature - C
RG = 25
VDD = 150 V
VGS = 20 V 0 V
Starting Tch = 25 C
100
1m
L - Inductive Load - H
10 m
2SK3325
PACKAGE DRAWINGS (Unit : mm)
4.8 MAX.
10.6 MAX.
3.60.2
(10)
1.30.2
10.0
4.8 MAX.
1.30.2
1 2 3
12.7 MIN.
6.0 MAX.
1.30.2
1.30.2
0.750.3
2.54 TYP.
0.50.2
0.750.1
2.54 TYP.
8.50.2
15.5 MAX.
5.9 MIN.
12.7 MIN.
3.00.3
2)TO-262 (MP-25 Fin Cut)

1.00.5
1)TO-220AB (MP-25)
0.50.2
2.80.2
2.54 TYP.
2.80.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-263 (MP-25ZJ)
4.8 MAX.
(10)
1.30.2
EQUIVALENT CIRCUIT
5.70.4
8.50.2
1.00.5
1.40.2
0.70.2
2
3 2.54 TYP.
2.80.2
2.54 TYP. 1
Remark
Drain
(0
)
.5R
.8R
(0
Body
Diode
Gate
0.50.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Source
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it once, when it has occurred.
2SK3325
The information in this document is current as of May, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4

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Datasheet k3325

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

The 2SK3325 is N-Channel DMOS FET device that features

a low gate charge and excellent switching characteristics, and

Gate voltage rating: 30 V

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Gate to Source Voltage (VDS = 0 V)

Total Power Dissipation (TC = 25C)

Total Power Dissipation (TA = 25C)

Drain Current (DC)

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW 10 s, Duty Cycle 1 %

Drain Leakage Current

VDS = 500 V, VGS = 0 V

Gate to Source Leakage Current

VDS = 10 V, VGS = 0 V, f = 1 MHz

Gate to Source Cut-off Voltage

Reverse Transfer Capacitance

Turn-on Delay Time

VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V,

Turn-off Delay Time

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage

VDD = 400 V, VGS = 10 V, ID = 10 A

Reverse Recovery Time

Reverse Recovery Charge

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

TEST CIRCUIT 3 GATE CHARGE

Data Sheet D14264EJ1V0DS00

Figure2. TOTAL POWER DISSIPATION vs.

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

Figure4. DRAIN CURRENT vs.

Figure3. FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

Data Sheet D14264EJ1V0DS00

rth (t) - Transient Thermal Resistance - C/W

Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

IyfsI - Forward Transfer Admittance - S

Figure7. FORWARD TRANSFER ADMITTANCE vs.

RDS(on) - Drain to Source On-state Resistance -

Tch - Channel Temperature - C

Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.

VGS(off) - Gate to Source Cut-off Voltage - V

RDS(on) - Drain to Source On-state Resistance -

Figure9. DRAIN TO SOURCE ON-STATE

VGS - Gate to Source Voltage - V

Data Sheet D14264EJ1V0DS00

Figure12. SOURCE TO DRAIN DIODE

Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

Tch - Channel Temperature - C

VSD - Source to Drain Voltage - V

Figure13. CAPACITANCE vs. DRAIN TO

Figure14. SWITCHING CHARACTERISTICS

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

VDS - Drain to Source Voltage - V

Figure15. REVERSE RECOVERY TIME vs.