Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
telecommunications
equipment
against voltage transients.

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

V(BO)

Breakover voltage
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
Holding current
Non-repetitive peak pulse
current (CCITT K17)

150
-

140
160
180
200
220
240
260
280
-

40

V
V
V
V
V
V
V
V
mA
A

IH
IPP

OUTLINE - SOD106

SYMBOL

PH

date code
XXX denotes voltage grade

YM
212
XXX

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

VD

Continuous voltage

IPP

Non-repetitive peak pulse

current

ITSM

BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
5/310 s impulse equivalent to
10/700 s, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
Tj = 70 C prior to surge
tp = 10 ms
tp = 10 s

Non repetitive surge peak

on-state current
I2t for fusing
Rate of rise of on-state current
after V(BO) turn-on
Continuous dissipation on
Tsp = 50C
infinite heatsink
Peak dissipation
tp = 1 ms; Ta = 25C
Storage temperature
Operating junction temperature
Maximum terminal temperature soldering time = 10 s
for soldering

I2t
dIT/dt
Ptot
PTM
Tstg
Tj
TL

January 1997

MIN.

MAX.

UNIT

105
120
135
150
165
180
195
210
40

V
V
V
V
V
V
V
V
A

15

1.1
50

A2s
A/s

- 40
-

50
150
150
260

W
C
C
C

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-sp

Thermal resistance junction to

solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient

Rth j-a
Zth j-a

CONDITIONS

MIN.

TYP.

MAX.

UNIT

25

K/W

pcb mounted; minimum footprint

100

K/W

tp = 1 ms

2.6

K/W

ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise stated
TYPE

PARAMETER
Marking

Avalanche
voltage

Breakover
voltage

Off-state current

Critical rate of
rise of off-state
voltage

Conditions

IBR = 10 mA

ID IS
tp = 100 s

Tj = 70C;
RH 65%

Tj = 70C

Symbol

VBR

VBO

ID @ VD

dVD/dt @ VDM

Limits

min

typ

typ

max

max

Units

V/s

123
140
158
176
193
211
228
246

140
160
180
200
220
240
260
280

140
160
180
200
220
240
260
280

157
180
202
224
247
269
292
314

10
10
10
10
10
10
10
10

105
120
135
150
165
180
195
210

2000
2000
2000
2000
2000
2000
2000
2000

105
120
135
150
165
180
195
210

BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280

212-140
212-160
212-180
212-200
212-220
212-240
212-260
212-280

max

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VT
IH

On-state voltage
Holding current1

IS
S(BR)

Switching current2
Temperature coefficient of
avalanche voltage
Junction capacitance

ITM = 2 A; tp = 200 s
Tj = 25C
Tj = 70C
tp = 100 s

150
100
10
-

200
+0.1

2.5
1000
-

V
mA
mA
mA
%/K

100

pF

Cj

VD = 0 V, f = 1 kHz to 1 MHz

1 The minimum current at which the diode will remain in the on-state
2 The avalanche current required to switch the diode to the on-state.
January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

VT

current

1.06

IT

V(BR)(Tj)
V(BR)(25 C)

1.04

V(BR)

IH

IS

1.02

V(BO)

1.00

I(BR)

ID

0.98
VD

voltage

0.96
0.94
0.92
0.90

Symbol
Symmetric BOD

-40

Fig.1. Definition of breakover diode characteristics.

20
40
Tj / C

60

80

100

Fig.4. Normalised avalanche breakdown voltage V(BR)

and V(BO) as a function of temperature.

current

20

IT / A
Tj = 25 C
Tj = 150 C

I PP

100%
90%

-20

15

50%

max

typ

10

30%
5

time
5us

0
1

310us

Fig.2. Test waveform for high voltage impulse (IPP)

according to CCITT vol IX-Rec K17.

20

VT / V

Fig.5. On-state current as a function of on-state

voltage; tp = 200 s to avoid excessive dissipation.

BR211

ITSM / A

100 ID / uA

ITSM

15

time

max

10
10

1
5

0.1
1

10

100
Number of impulses

1000

-40

10000

20
40
Tj / C

60

80

100

Fig.6. Maximum off-state current as a function of

temperature.

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70C
prior to surge.

January 1997

-20

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

10 IS / A

100

Cj / pF

max

BR211-140

typ

typ

BR211-280

0.1

10

0.01

0.001
-50

min

50
Tj / C

100

1
1

150

10

1000

100
VD / V

Fig.7. Switching current as a function of junction

temperature.

Fig.9. Typical junction capacitance as a function of

off-state voltage, f = 1 MHz; Tj = 25C.

10 IH / A

1000

BR211

Zth / (K/W)

100

min

0.1

10

0.01

PD

tp
t

0.001
-50

50
Tj / C

100

0.1
10us

150

0.1s

10s

1000s

tp / s

Fig.8. Minimum holding current as a function of

temperature.

January 1997

1ms

Fig.10. Transient thermal impedance. Zth j-a = f(tp).

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

MECHANICAL DATA
Dimensions in mm

5.5
5.1
4.5
4.3

Net Mass: 0.2 g

2.3
2.0
0.2
0.05

3.3
2.7

2.8 1.6
2.4 1.4

Fig.11. SOD106.
Notes
1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering
Guidelines". Order code:9397 750 00505.

January 1997

Rev 1.000

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

January 1997

Rev 1.000

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