Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV72E series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high efficiency

rugged dual rectifier diodes in a
plastic envelope, featuring low
forward voltage drop, ultra-fast
recovery times and soft recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.

PINNING - SOT93
PIN

SYMBOL

Anode 1 (a)

Cathode (k)

Anode 2 (a)

tab

Cathode (k)

BYV72ERepetitive peak reverse

voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode

VRRM
VF
IO(AV)
trr
IRRM

PIN CONFIGURATION

DESCRIPTION

PARAMETER

MAX.

MAX.

MAX.

UNIT

100
100

150
150

200
200

0.90
30

0.90
30

0.90
30

V
A

28
0.2

28
0.2

28
0.2

ns
A

SYMBOL

tab

a1

a2

k
1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

VRRM
VRWM
VR

Repetitive peak reverse voltage

Crest working reverse voltage
Continuous reverse voltage1

IO(AV)

Output current (both diodes

conducting)2

IO(RMS)
IFRM
IFSM

I2t
IRRM
IRSM
Tstg
Tj

RMS forward current

Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode

CONDITIONS

MIN.
-

square wave
= 0.5; Tmb 104 C
sinusoidal; a = 1.57;
Tmb 107 C

t = 25 s; = 0.5;
Tmb 104 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
I2t for fusing
t = 10 ms
Repetitive peak reverse current tp = 2 s; = 0.001
per diode
Non-repetitive peak reverse
tp = 100 s
current per diode
Storage temperature
Operating junction temperature

MAX.
-100
100
100
100

-150
150
150
150

UNIT
-200
200
200
200

V
V
V

30

27

43
30

A
A

150
160

A
A

112
0.2

A2s
A

0.2

-40
-

150
150

C
C

1 Tmb 144C for thermal stability.

2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
November 1994

1
This datasheet has been downloaded from http://www.digchip.com at this page

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV72E series

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge
capacitor voltage

Human body model;

C = 250 pF; R = 1.5 k

MIN.

MAX.

UNIT

kV

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-mb

Thermal resistance junction to

mounting base
Thermal resistance junction to
ambient

per diode
both diodes conducting
in free air

Rth j-a

MIN.

TYP.

MAX.

UNIT

45

2.4
1.4
-

K/W
K/W
K/W

MIN.

TYP.

MAX.

UNIT

0.83
0.95
1.00
0.5
10

0.90
1.05
1.20
1
100

V
V
V
mA
A

MIN.

TYP.

MAX.

UNIT

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

VF

Forward voltage (per diode)

IR

Reverse current (per diode)

IF = 15 A; Tj = 150C
IF = 15 A
IF = 30 A
VR = VRWM; Tj = 100 C
VR = VRWM

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

Qs

Reverse recovery charge (per

diode)
Reverse recovery time (per
diode)
Reverse recovery time (per
diode)
Forward recovery voltage (per
diode)

IF = 2 A; VR 30 V; -dIF/dt = 20 A/s

15

nC

IF = 1 A; VR 30 V;
-dIF/dt = 100 A/s
IF = 0.5 A to IR = 1 A; Irec = 0.25 A

20

28

ns

13

22

ns

IF = 1 A; dIF/dt = 10 A/s

trr1
trr2
Vfr

November 1994

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

dI
F

BYV72E series

0.5A

dt

IF

0A

rr
time

Q
I

10%

I rec = 0.25A
IR

100%

trr2

rrm
I = 1A
R

Fig.1. Definition of trr1, Qs and Irrm

Fig.4. Definition of trr2

25

PF / W

Tmb(max) / C
90

BYV72

Vo = 0.7050 V
Rs = 0.0130 Ohms

D = 1.0
102

20
0.5
15

114

0.2

time
0.1

126

10

tp

V
V

tp
D=
T

138

fr

10
15
IF(AV) / A

time

Fig.2. Definition of Vfr

150
25

20

Fig.5. Maximum forward dissipation PF = f(IF(AV)) per

diode; square current waveform where
IF(AV) =IF(RMS) x D.

20

PF / W

Tmb(max) / C

BYV72

102

a = 1.57
15

1.9
2.8

Voltage Pulse Source

10

Current
shunt

126

138

to scope
0

Fig.3. Circuit schematic for trr2

November 1994

114

2.2

D.U.T.

IF(AV) / A

10

150
15

Fig.6. Maximum forward dissipation PF = f(IF(AV)) per

diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV72E series

trr / ns

100 Qs / nC

1000

IF=20A
10A
5A
2A
1A

IF=20A
100

10

IF=1A
10

10
dIF/dt (A/us)

1.0

100

1.0

Fig.7. Maximum trr at Tj = 25 C; per diode

10

10
-dIF/dt (A/us)

100

Fig.10. Maximum Qs at Tj = 25 C; per diode

Irrm / A

Zth (K/W)
10

IF=20A
1

IF=1A

0.1

0.1

tp

0.01
10
-dIF/dt (A/us)

0.01
10 us

100

0.1

10 s

tp / s

Fig.8. Maximum Irrm at Tj = 25 C; per diode

50

1 ms

Fig.11. Transient thermal impedance; per diode;

Zth j-mb = f(tp).

IF / A
Tj = 150 C

40

Tj = 25 C

30

20
typ
10
max
0
0

0.5

VF / V

1.0

1.5

Fig.9. Typical and maximum forward characteristic

IF = f(VF); parameter Tj

November 1994

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV72E series

MECHANICAL DATA
Dimensions in mm

15.2
max
14

Net Mass: 5 g

4.6
max

13.6
4.25
4.15

2 max

2
4.4

21
max
12.7
max

2.2 max
0.5
min

dimensions within
this zone are
uncontrolled
1

2
5.5

13.6
min

3
1.15
0.95

0.5 M

0.4
1.6

11
Fig.12. SOT93; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".

November 1994

Rev 1.100

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV72E series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1994

Rev 1.100