KSC2335

KSC2335
High Speed, High Voltage Switching

Industrial Use

TO-220

NPN Epitaxial Silicon Transistor

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol
VCBO

Collector-Base Voltage

Parameter

Value
500

Units
V

V CEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

400

IC

Collector Current (DC)

V
A

ICP

*Collector Current (Pulse)

15

IB

Base Current (DC)

3.5

PC

Collector Dissipation (Ta=25C)

1.5

PC

Collector Dissipation (TC=25C)

40

TJ

Junction Temperature

150

TSTG

Storage Temperature

- 55 ~ 150

* PW300s, Duty Cycle10%

Electrical Characteristics TC=25C unless otherwise noted

Symbol
VCEO(sus)

Parameter
Collector-Emitter Sustaining Voltage

Test Condition
IC = 3A, IB1 = 0.6A, L = 1mH

Min.
400

VCEX(sus)1

Collector-Emitter Sustaining Voltage

IC = 3A, IB1 = -IB2 = 0.6A

VBE(off) = -5V, L = 180H, Clamped

450

VCEX(sus)2

Collector-Emitter Sustaining Voltage

IC = 6A,IB1= 2A, IB2 = -0.6A

VBE(off) = -5V, L = 180H, Clamped

400

ICBO

Collector Cut-off Current

VCB = 400V, IE = 0

ICER

Collector Cut-off Current

VCE = 400V, RBE= 51 @ TC=125C

ICEX1

Collector Cut-off Current

VCE = 400V, VBE(off)= -1.5V

ICEX2

Collector Cut-off Current

VCE = 400V, VBE(off)= -1.5V @

TC=125C

Max.

Units
V

10

mA

10

mA

10

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

hFE1
hFE2
hFE3

* DC Current Gain

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 1A
VCE = 5V, IC = 3A

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = 3A, IB = 0.6A

VBE(sat)

* Base-Emitter Saturation Voltage

IC = 3A, IB = 0.6A

1.2

VCC =150V, IC= 3A

IB1 = -IB2 = 0.6A
RL= 50

2.5

tON

Turn ON Time

tSTG

Storage Time

tF

Fall Time

20
20
10

80
80

* Pulse Test: PW350s, Duty Cycle2% Pulsed

hFE Classification
Classification

hFE2

20 ~ 40

30 ~ 60

40 ~ 80

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSC2335

Typical Characteristics
IB=0.45A
5

VCE = 5 V
Pulsed

IB=0.30A

IB=0.25A
IB=0.20A

IB=0.15A
IB=0.10A

IB=0.05A
1

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

1000

IB=0.40A
IB=0.35A

IB=0.50A

100

10

1
0.01

0
0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

VCE(SAT) [V], VBE(SAT) [V], SATURATION VOLTAGE

0.1

10

Ic[A], COLLECTOR CURRENT

Figure 2. DC current Gain

160

10

IC = 5 IB
Pulsed

140

dT [%], IC DERATING

120

VBE(SAT)

0.1

100

80

S/b Limited
60

40

Dissipation Limited

VCE(SAT)
20

0.01
0.01

0.1

10

50

100

150

200

TC [ C], CASE TEMPERATURE

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Derating Curve of Safe Operating Areas

10

100

Single Pulse

IC [A], COLLECTOR CURRENT

VCEO(SUS)

VCEX(SUS)

IC [A], COLLECTOR CURRENT

PW = 10 us

0
0

100

200

300

400

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Reverse Bias Safe Operating Area

2001 Fairchild Semiconductor Corporation

500

10

50 us
Dissipation Limoted

0.1 ms
0.3 ms

S/b Limited

0.1

1 ms
100 ms
10 ms

0.01

1E-3
1

10

100

1000

10000

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Forward Bias Safe Operating Area

Rev. A1, June 2001

KSC2335

Package Demensions

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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As used herein:
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1. Life support devices or systems are devices or systems
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H3

This datasheet has been download from:

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